IT1313260B1 - Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione. - Google Patents

Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione.

Info

Publication number
IT1313260B1
IT1313260B1 IT1999MI001680A ITMI991680A IT1313260B1 IT 1313260 B1 IT1313260 B1 IT 1313260B1 IT 1999MI001680 A IT1999MI001680 A IT 1999MI001680A IT MI991680 A ITMI991680 A IT MI991680A IT 1313260 B1 IT1313260 B1 IT 1313260B1
Authority
IT
Italy
Prior art keywords
semiconductor
manufacturing process
photosensor device
relative manufacturing
integrated photosensor
Prior art date
Application number
IT1999MI001680A
Other languages
English (en)
Inventor
Enrico Laurin
Matteo Bordogna
Oreste Bernardi
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI001680A priority Critical patent/IT1313260B1/it
Publication of ITMI991680A0 publication Critical patent/ITMI991680A0/it
Priority to EP00104800A priority patent/EP1073125A3/en
Priority to US09/626,836 priority patent/US6352876B1/en
Publication of ITMI991680A1 publication Critical patent/ITMI991680A1/it
Priority to US09/972,169 priority patent/US6538267B2/en
Application granted granted Critical
Publication of IT1313260B1 publication Critical patent/IT1313260B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
    • G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
    • G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
    • G01J3/513—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters having fixed filter-detector pairs
    • G01J2003/516—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters having fixed filter-detector pairs with several stacked filters or stacked filter-detector pairs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IT1999MI001680A 1999-07-28 1999-07-28 Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione. IT1313260B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT1999MI001680A IT1313260B1 (it) 1999-07-28 1999-07-28 Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione.
EP00104800A EP1073125A3 (en) 1999-07-28 2000-03-06 Integrated semiconductor optic sensor device and corresponding manufacturing process
US09/626,836 US6352876B1 (en) 1999-07-28 2000-07-27 Integrated semiconductor optic sensor device and corresponding manufacturing process
US09/972,169 US6538267B2 (en) 1999-07-28 2001-10-03 Integrated semiconductor optic sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI001680A IT1313260B1 (it) 1999-07-28 1999-07-28 Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione.

Publications (3)

Publication Number Publication Date
ITMI991680A0 ITMI991680A0 (it) 1999-07-28
ITMI991680A1 ITMI991680A1 (it) 2001-01-28
IT1313260B1 true IT1313260B1 (it) 2002-07-17

Family

ID=11383438

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI001680A IT1313260B1 (it) 1999-07-28 1999-07-28 Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione.

Country Status (2)

Country Link
EP (1) EP1073125A3 (it)
IT (1) IT1313260B1 (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1341235A3 (en) 2002-02-28 2006-05-10 Canon Kabushiki Kaisha Image pickup apparatus
US6818962B2 (en) 2002-10-25 2004-11-16 Omnivision International Holding Ltd Image sensor having integrated thin film infrared filter
US7759679B2 (en) 2004-01-15 2010-07-20 Panasonic Corporation Solid-state imaging device, manufacturing method of solid-state imaging device, and camera employing same
JP4882297B2 (ja) * 2004-12-10 2012-02-22 ソニー株式会社 物理情報取得装置、半導体装置の製造方法
US7456384B2 (en) 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
JP2007228460A (ja) * 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
US7960807B2 (en) 2007-02-09 2011-06-14 Intersil Americas Inc. Ambient light detectors using conventional CMOS image sensor process
US8492699B2 (en) 2009-09-22 2013-07-23 Intersil Americas Inc. Photodetectors useful as ambient light sensors having an optical filter rejecting a portion of infrared light
US8779542B2 (en) 2012-11-21 2014-07-15 Intersil Americas LLC Photodetectors useful as ambient light sensors and methods for use in manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119502A (ja) * 1985-11-18 1987-05-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション スペクトル・フイルタ
US5453611A (en) * 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
JP3242495B2 (ja) * 1993-07-01 2001-12-25 シャープ株式会社 多層膜フィルタ付き受光素子及びその製造方法
US5648653A (en) * 1993-10-22 1997-07-15 Canon Kabushiki Kaisha Optical filter having alternately laminated thin layers provided on a light receiving surface of an image sensor

Also Published As

Publication number Publication date
EP1073125A3 (en) 2003-10-08
ITMI991680A1 (it) 2001-01-28
EP1073125A2 (en) 2001-01-31
ITMI991680A0 (it) 1999-07-28

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