IT9047587A0 - Componente semiconduttore di potenza, cellulare. - Google Patents

Componente semiconduttore di potenza, cellulare.

Info

Publication number
IT9047587A0
IT9047587A0 IT9047587A IT4758790A IT9047587A0 IT 9047587 A0 IT9047587 A0 IT 9047587A0 IT 9047587 A IT9047587 A IT 9047587A IT 4758790 A IT4758790 A IT 4758790A IT 9047587 A0 IT9047587 A0 IT 9047587A0
Authority
IT
Italy
Prior art keywords
cell phone
power semiconductor
semiconductor component
component
phone
Prior art date
Application number
IT9047587A
Other languages
English (en)
Other versions
IT9047587A1 (it
IT1239789B (it
Inventor
Jacques Arnould
Original Assignee
Telemecanique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telemecanique filed Critical Telemecanique
Publication of IT9047587A0 publication Critical patent/IT9047587A0/it
Publication of IT9047587A1 publication Critical patent/IT9047587A1/it
Application granted granted Critical
Publication of IT1239789B publication Critical patent/IT1239789B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
IT47587A 1989-02-03 1990-02-01 Componente semiconduttore di potenza, cellulare. IT1239789B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8901409A FR2642902B1 (fr) 1989-02-03 1989-02-03 Composant semi-conducteur de puissance cellulaire

Publications (3)

Publication Number Publication Date
IT9047587A0 true IT9047587A0 (it) 1990-02-01
IT9047587A1 IT9047587A1 (it) 1990-08-04
IT1239789B IT1239789B (it) 1993-11-15

Family

ID=9378456

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47587A IT1239789B (it) 1989-02-03 1990-02-01 Componente semiconduttore di potenza, cellulare.

Country Status (6)

Country Link
US (1) US5025299A (it)
JP (1) JPH0334348A (it)
DE (1) DE4002435A1 (it)
FR (1) FR2642902B1 (it)
GB (1) GB2227882B (it)
IT (1) IT1239789B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2687843A1 (fr) * 1992-02-24 1993-08-27 Motorola Semiconducteurs Transistor bipolaire lateral pnp et procede de fabrication.
JPH05304221A (ja) * 1992-02-28 1993-11-16 Fuji Electric Co Ltd 大電流集積回路
US5665991A (en) * 1992-03-13 1997-09-09 Texas Instruments Incorporated Device having current ballasting and busing over active area using a multi-level conductor process
KR0136684B1 (en) * 1993-06-01 1998-04-29 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
US5482897A (en) * 1994-07-19 1996-01-09 Lsi Logic Corporation Integrated circuit with on-chip ground plane
US5581126A (en) * 1995-09-14 1996-12-03 Advanced Micro Devices, Inc. Interlaced layout configuration for differential pairs of interconnect lines
DE19613409B4 (de) * 1996-04-03 2005-11-17 Texas Instruments Deutschland Gmbh Leistungsbauelementanordnung
US7283381B2 (en) 2000-08-17 2007-10-16 David Earl Butz System and methods for addressing a matrix incorporating virtual columns and addressing layers
US6462977B2 (en) 2000-08-17 2002-10-08 David Earl Butz Data storage device having virtual columns and addressing layers
CN101449384B (zh) 2006-05-18 2011-06-08 松下电器产业株式会社 半导体元件及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2545654B1 (fr) * 1983-05-03 1985-09-13 Fairchild Camera Instr Co Composant semi-conducteur de puissance, et procede pour la fabrication

Also Published As

Publication number Publication date
GB9000499D0 (en) 1990-03-07
GB2227882B (en) 1992-11-25
US5025299A (en) 1991-06-18
IT9047587A1 (it) 1990-08-04
GB2227882A (en) 1990-08-08
DE4002435A1 (de) 1990-08-09
IT1239789B (it) 1993-11-15
JPH0334348A (ja) 1991-02-14
FR2642902A1 (fr) 1990-08-10
FR2642902B1 (fr) 1991-05-17

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19990226