DE69109525D1 - Leistungshalbleiteranordnung. - Google Patents

Leistungshalbleiteranordnung.

Info

Publication number
DE69109525D1
DE69109525D1 DE69109525T DE69109525T DE69109525D1 DE 69109525 D1 DE69109525 D1 DE 69109525D1 DE 69109525 T DE69109525 T DE 69109525T DE 69109525 T DE69109525 T DE 69109525T DE 69109525 D1 DE69109525 D1 DE 69109525D1
Authority
DE
Germany
Prior art keywords
power semiconductor
semiconductor arrangement
arrangement
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69109525T
Other languages
English (en)
Other versions
DE69109525T2 (de
Inventor
Patrick Legros
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Thomson SCF Semiconducteurs Specifiques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson SCF Semiconducteurs Specifiques filed Critical Thomson SCF Semiconducteurs Specifiques
Application granted granted Critical
Publication of DE69109525D1 publication Critical patent/DE69109525D1/de
Publication of DE69109525T2 publication Critical patent/DE69109525T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4821—Bridge structure with air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
DE1991609525 1990-03-09 1991-03-05 Leistungshalbleiteranordnung. Expired - Fee Related DE69109525T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9003036A FR2659494B1 (fr) 1990-03-09 1990-03-09 Composant semiconducteur de puissance, dont la puce est montee a l'envers.

Publications (2)

Publication Number Publication Date
DE69109525D1 true DE69109525D1 (de) 1995-06-14
DE69109525T2 DE69109525T2 (de) 1995-09-21

Family

ID=9394578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991609525 Expired - Fee Related DE69109525T2 (de) 1990-03-09 1991-03-05 Leistungshalbleiteranordnung.

Country Status (4)

Country Link
EP (1) EP0446125B1 (de)
JP (1) JPH04219937A (de)
DE (1) DE69109525T2 (de)
FR (1) FR2659494B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028348A (en) * 1993-11-30 2000-02-22 Texas Instruments Incorporated Low thermal impedance integrated circuit
JP2773685B2 (ja) * 1995-06-16 1998-07-09 日本電気株式会社 半導体装置
FR2737342B1 (fr) * 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid
US5686743A (en) * 1996-07-10 1997-11-11 Trw Inc. Method of forming airbridged metallization for integrated circuit fabrication
DE19801095B4 (de) 1998-01-14 2007-12-13 Infineon Technologies Ag Leistungs-MOSFET
FR2827424B1 (fr) * 2001-07-13 2005-02-18 Thales Sa Composant electronique encapsule comportant un dispositif electronique de puissance et procede de fabrication
DE10220396B4 (de) * 2002-05-07 2007-08-23 Infineon Technologies Ag Leistungshalbleiterbauelementanordnung
JP2011071154A (ja) * 2009-09-24 2011-04-07 Oki Electric Industry Co Ltd 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA892844A (en) * 1970-08-14 1972-02-08 H. Hantusch Gerald Semiconductor heat sink
JPS5680164A (en) * 1979-12-05 1981-07-01 Mitsubishi Electric Corp Semiconductor device
FR2554275B1 (fr) * 1983-10-26 1986-09-05 Radiotechnique Compelec Dispositif de connexion pour un semi-conducteur de puissance
FR2565030B1 (fr) * 1984-05-25 1986-08-22 Thomson Csf Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure
JPS63144588A (ja) * 1986-12-09 1988-06-16 Mitsubishi Electric Corp 半導体チツプレ−ザ用サブマウント
FR2629271B1 (fr) * 1988-03-25 1991-03-29 Thomson Hybrides Microondes Dispositif d'interconnexion et de protection d'une pastille nue de composant hyperfrequence

Also Published As

Publication number Publication date
FR2659494A1 (fr) 1991-09-13
EP0446125A1 (de) 1991-09-11
JPH04219937A (ja) 1992-08-11
FR2659494B1 (fr) 1996-12-06
DE69109525T2 (de) 1995-09-21
EP0446125B1 (de) 1995-05-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee