DE60030279D1 - Halbleiterbasis, ihre herstellungsmethode und halbleiterkristallherstellungsmethode - Google Patents
Halbleiterbasis, ihre herstellungsmethode und halbleiterkristallherstellungsmethodeInfo
- Publication number
- DE60030279D1 DE60030279D1 DE60030279T DE60030279T DE60030279D1 DE 60030279 D1 DE60030279 D1 DE 60030279D1 DE 60030279 T DE60030279 T DE 60030279T DE 60030279 T DE60030279 T DE 60030279T DE 60030279 D1 DE60030279 D1 DE 60030279D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor
- basis
- semiconductor crystal
- crystal manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7213399 | 1999-03-17 | ||
JP7213399 | 1999-03-17 | ||
JP33642199 | 1999-11-26 | ||
JP33559199 | 1999-11-26 | ||
JP33642199A JP3471687B2 (ja) | 1999-11-26 | 1999-11-26 | 半導体基材及びその製造方法 |
JP33559199A JP3471685B2 (ja) | 1999-03-17 | 1999-11-26 | 半導体基材及びその製造方法 |
JP35304499 | 1999-12-13 | ||
JP35304499A JP3441415B2 (ja) | 1999-12-13 | 1999-12-13 | 半導体結晶の製造方法 |
PCT/JP2000/001588 WO2000055893A1 (fr) | 1999-03-17 | 2000-03-15 | Base de semiconducteur et son procede de fabrication et procede de fabrication de cristal semiconducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60030279D1 true DE60030279D1 (de) | 2006-10-05 |
DE60030279T2 DE60030279T2 (de) | 2007-08-30 |
Family
ID=27465435
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60030279T Expired - Lifetime DE60030279T2 (de) | 1999-03-17 | 2000-03-15 | Halbleiterbasis, ihre herstellungsmethode und halbleiterkristallherstellungsmethode |
DE60043122T Expired - Lifetime DE60043122D1 (de) | 1999-03-17 | 2000-03-15 | Halbleiterbasis ihre Herstellung und Halbleiterkristallhersetllungsmethode |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60043122T Expired - Lifetime DE60043122D1 (de) | 1999-03-17 | 2000-03-15 | Halbleiterbasis ihre Herstellung und Halbleiterkristallhersetllungsmethode |
Country Status (5)
Country | Link |
---|---|
US (4) | US6940098B1 (de) |
EP (2) | EP1501118B1 (de) |
KR (1) | KR100677683B1 (de) |
DE (2) | DE60030279T2 (de) |
WO (1) | WO2000055893A1 (de) |
Families Citing this family (110)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60030279T2 (de) * | 1999-03-17 | 2007-08-30 | Mitsubishi Cable Industries, Ltd. | Halbleiterbasis, ihre herstellungsmethode und halbleiterkristallherstellungsmethode |
JP3587081B2 (ja) | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法及びiii族窒化物半導体発光素子 |
JP3555500B2 (ja) | 1999-05-21 | 2004-08-18 | 豊田合成株式会社 | Iii族窒化物半導体及びその製造方法 |
US6580098B1 (en) | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
EP1104031B1 (de) * | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitrid-Halbleiterlaserdiode und deren Herstellungsverfahren |
JP3455512B2 (ja) | 1999-11-17 | 2003-10-14 | 日本碍子株式会社 | エピタキシャル成長用基板およびその製造方法 |
JP2001185493A (ja) | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法及びiii族窒化物系化合物半導体素子 |
JP4432180B2 (ja) | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体 |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
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JP2001267242A (ja) * | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体及びその製造方法 |
TW518767B (en) | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
JP2001313259A (ja) | 2000-04-28 | 2001-11-09 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体基板の製造方法及び半導体素子 |
US6836498B2 (en) * | 2000-06-05 | 2004-12-28 | Sony Corporation | Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof |
US7619261B2 (en) | 2000-08-07 | 2009-11-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
DE10041285A1 (de) * | 2000-08-22 | 2002-03-07 | Univ Berlin Tech | Verfahren zur Epitaxie von (Indium, Aluminium, Gallium)-nitrid-Schichten auf Fremdsubstraten |
JP3556916B2 (ja) * | 2000-09-18 | 2004-08-25 | 三菱電線工業株式会社 | 半導体基材の製造方法 |
US7052979B2 (en) | 2001-02-14 | 2006-05-30 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
JP3679720B2 (ja) * | 2001-02-27 | 2005-08-03 | 三洋電機株式会社 | 窒化物系半導体素子および窒化物系半導体の形成方法 |
US7053420B2 (en) * | 2001-03-21 | 2006-05-30 | Mitsubishi Cable Industries, Ltd. | GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof |
JP2002280314A (ja) | 2001-03-22 | 2002-09-27 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法、及びそれに基づくiii族窒化物系化合物半導体素子 |
JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
JP4104305B2 (ja) | 2001-08-07 | 2008-06-18 | 三洋電機株式会社 | 窒化物系半導体チップおよび窒化物系半導体基板 |
JP2003068654A (ja) | 2001-08-27 | 2003-03-07 | Hoya Corp | 化合物単結晶の製造方法 |
DE10142656A1 (de) * | 2001-08-31 | 2003-03-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterschichten auf III-V-Nitridhalbleiter-Basis |
EP1291904A3 (de) * | 2001-09-10 | 2009-10-07 | FUJIFILM Corporation | GaN-Substrat, das auf einer feinen diskreten Löcher aufweisenden GaN-Schicht gebildet wurde, die durch selektives Wachstum hergestellt worden ist |
JP3690326B2 (ja) | 2001-10-12 | 2005-08-31 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
JP4290358B2 (ja) | 2001-10-12 | 2009-07-01 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
AU2002354254A1 (en) * | 2001-12-20 | 2003-07-09 | Matsushita Electric Industrial Co., Ltd. | Method for making nitride semiconductor substrate and method for making nitride semiconductor device |
JP3946541B2 (ja) * | 2002-02-25 | 2007-07-18 | 三菱電線工業株式会社 | 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法 |
JP4150527B2 (ja) * | 2002-02-27 | 2008-09-17 | 日鉱金属株式会社 | 結晶の製造方法 |
CN100418236C (zh) * | 2002-05-15 | 2008-09-10 | 松下电器产业株式会社 | 半导体发光元件及其制造方法 |
CN100362710C (zh) * | 2003-01-14 | 2008-01-16 | 松下电器产业株式会社 | 氮化物半导体元件及其制造方法和氮化物半导体基板的制造方法 |
WO2004064212A1 (ja) * | 2003-01-14 | 2004-07-29 | Matsushita Electric Industrial Co. Ltd. | 窒化物半導体素子及びその製造方法、並びに窒化物半導体基板の製造方法 |
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JP4229005B2 (ja) * | 2003-06-26 | 2009-02-25 | 住友電気工業株式会社 | GaN基板及びその製造方法、並びに窒化物半導体素子 |
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KR20050077902A (ko) * | 2004-01-29 | 2005-08-04 | 엘지전자 주식회사 | 질화물 반도체 박막의 성장 방법 |
ATE418806T1 (de) * | 2004-04-02 | 2009-01-15 | Nichia Corp | Nitrid-halbleiterlaservorrichtung |
US20080048194A1 (en) * | 2004-06-14 | 2008-02-28 | Hiromitsu Kudo | Nitride Semiconductor Light-Emitting Device |
WO2006054543A1 (ja) * | 2004-11-22 | 2006-05-26 | Matsushita Electric Industrial Co., Ltd. | 窒素化合物系半導体装置およびその製造方法 |
US7646027B2 (en) * | 2005-05-06 | 2010-01-12 | Showa Denko K.K. | Group III nitride semiconductor stacked structure |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
US7557002B2 (en) * | 2006-08-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming transistor devices |
TWI319893B (en) * | 2006-08-31 | 2010-01-21 | Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate | |
JP5082752B2 (ja) | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
GB0701069D0 (en) * | 2007-01-19 | 2007-02-28 | Univ Bath | Nanostructure template and production of semiconductors using the template |
US7989322B2 (en) | 2007-02-07 | 2011-08-02 | Micron Technology, Inc. | Methods of forming transistors |
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EP1184897A1 (de) | 2002-03-06 |
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EP1501118B1 (de) | 2009-10-07 |
WO2000055893A1 (fr) | 2000-09-21 |
EP1184897B8 (de) | 2006-10-11 |
EP1501118A1 (de) | 2005-01-26 |
US6940098B1 (en) | 2005-09-06 |
DE60030279T2 (de) | 2007-08-30 |
KR20020010583A (ko) | 2002-02-04 |
US7504324B2 (en) | 2009-03-17 |
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