DE60038323D1 - Halbleiterkristall, dessen Herstellungsverfahren und Halbleiterbauelement - Google Patents
Halbleiterkristall, dessen Herstellungsverfahren und HalbleiterbauelementInfo
- Publication number
- DE60038323D1 DE60038323D1 DE60038323T DE60038323T DE60038323D1 DE 60038323 D1 DE60038323 D1 DE 60038323D1 DE 60038323 T DE60038323 T DE 60038323T DE 60038323 T DE60038323 T DE 60038323T DE 60038323 D1 DE60038323 D1 DE 60038323D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor
- semiconductor device
- crystal
- semiconductor crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP764299 | 1999-01-14 | ||
JP764299 | 1999-01-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60038323D1 true DE60038323D1 (de) | 2008-04-30 |
DE60038323T2 DE60038323T2 (de) | 2009-04-16 |
Family
ID=11671493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60038323T Expired - Fee Related DE60038323T2 (de) | 1999-01-14 | 2000-01-12 | Halbleiterkristall, dessen Herstellungsverfahren und Halbleiterbauelement |
Country Status (6)
Country | Link |
---|---|
US (1) | US6403976B1 (de) |
EP (1) | EP1020898B1 (de) |
KR (1) | KR100588708B1 (de) |
CN (1) | CN1168147C (de) |
DE (1) | DE60038323T2 (de) |
TW (1) | TW432712B (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60042666D1 (de) * | 1999-01-14 | 2009-09-17 | Panasonic Corp | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US6674099B1 (en) * | 1999-02-24 | 2004-01-06 | Quantum Semiconductor, Llc | Misfet |
US7023030B2 (en) * | 1999-02-24 | 2006-04-04 | Quantum Semiconductor, Llc | Misfet |
WO2001073852A1 (fr) * | 2000-03-27 | 2001-10-04 | Matsushita Electric Industrial Co., Ltd. | Cristal semi-conducteur sigec et son procede de fabrication |
JP2003158075A (ja) | 2001-08-23 | 2003-05-30 | Sumitomo Mitsubishi Silicon Corp | 半導体基板の製造方法及び電界効果型トランジスタの製造方法並びに半導体基板及び電界効果型トランジスタ |
US6890835B1 (en) * | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
US6852602B2 (en) * | 2001-01-31 | 2005-02-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor crystal film and method for preparation thereof |
JP2002252233A (ja) * | 2001-02-22 | 2002-09-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US6921743B2 (en) * | 2001-04-02 | 2005-07-26 | The Procter & Gamble Company | Automatic dishwashing compositions containing a halogen dioxide salt and methods for use with electrochemical cells and/or electrolytic devices |
US6750119B2 (en) * | 2001-04-20 | 2004-06-15 | International Business Machines Corporation | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
JP4060580B2 (ja) * | 2001-11-29 | 2008-03-12 | 株式会社ルネサステクノロジ | ヘテロ接合バイポーラトランジスタ |
JP3970011B2 (ja) * | 2001-12-11 | 2007-09-05 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP3719998B2 (ja) * | 2002-04-01 | 2005-11-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6825506B2 (en) * | 2002-11-27 | 2004-11-30 | Intel Corporation | Field effect transistor and method of fabrication |
EP1695388A2 (de) * | 2003-12-01 | 2006-08-30 | The Regents Of The University Of California | Mehrband-halbleiterzusammensetzungen für photovoltaische bauelemente |
US7005333B2 (en) | 2003-12-30 | 2006-02-28 | Infineon Technologies Ag | Transistor with silicon and carbon layer in the channel region |
US7002224B2 (en) | 2004-02-03 | 2006-02-21 | Infineon Technologies Ag | Transistor with doped gate dielectric |
US7094671B2 (en) * | 2004-03-22 | 2006-08-22 | Infineon Technologies Ag | Transistor with shallow germanium implantation region in channel |
US20060071213A1 (en) * | 2004-10-04 | 2006-04-06 | Ce Ma | Low temperature selective epitaxial growth of silicon germanium layers |
US7718996B2 (en) * | 2006-02-21 | 2010-05-18 | Mears Technologies, Inc. | Semiconductor device comprising a lattice matching layer |
US20070238267A1 (en) * | 2006-03-28 | 2007-10-11 | International Business Machines Corporation | Epitaxy of Silicon-Carbon Substitutional Solid Solutions by Ultra-Fast Annealing of Amorphous Material |
EP1933384B1 (de) | 2006-12-15 | 2013-02-13 | Soitec | Halbleiter-Heterostruktur |
US20080179636A1 (en) * | 2007-01-27 | 2008-07-31 | International Business Machines Corporation | N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers |
TWI419326B (zh) * | 2011-08-26 | 2013-12-11 | Univ Nat Chiao Tung | 一種在矽晶片上成長之高載子遷移率電晶體結構及其方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61292369A (ja) | 1985-06-20 | 1986-12-23 | Canon Inc | 電界効果型薄膜トランジスタ |
JPS6242572A (ja) | 1985-08-20 | 1987-02-24 | Fujitsu Ltd | 非晶質半導体薄膜の構成体 |
EP0812023A1 (de) * | 1996-04-09 | 1997-12-10 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiterbauteile, insbesondere Photodetektoren, lichtemittierende Dioden, optische Modulatoren und Wellenleiter mit einer auf einem Siliziumsubstrat angebrachten Mehrschichtstruktur |
DE29610067U1 (de) * | 1996-06-07 | 1996-08-29 | Igus Spritzgußteile für die Industrie GmbH, 51147 Köln | Führungsrinne für Energieführungsketten |
JPH10116919A (ja) * | 1996-10-11 | 1998-05-06 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ |
-
2000
- 2000-01-11 CN CNB001002430A patent/CN1168147C/zh not_active Expired - Fee Related
- 2000-01-12 EP EP00100591A patent/EP1020898B1/de not_active Expired - Lifetime
- 2000-01-12 DE DE60038323T patent/DE60038323T2/de not_active Expired - Fee Related
- 2000-01-13 US US09/482,077 patent/US6403976B1/en not_active Expired - Fee Related
- 2000-01-14 TW TW089100536A patent/TW432712B/zh not_active IP Right Cessation
- 2000-01-14 KR KR1020000001629A patent/KR100588708B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE60038323T2 (de) | 2009-04-16 |
EP1020898A3 (de) | 2000-09-06 |
TW432712B (en) | 2001-05-01 |
EP1020898B1 (de) | 2008-03-19 |
EP1020898A2 (de) | 2000-07-19 |
CN1260594A (zh) | 2000-07-19 |
KR100588708B1 (ko) | 2006-06-13 |
KR20000053487A (ko) | 2000-08-25 |
CN1168147C (zh) | 2004-09-22 |
US6403976B1 (en) | 2002-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8339 | Ceased/non-payment of the annual fee |