DE69942040D1 - Sensorvorrichtung und dessen herstellungsverfahren. - Google Patents

Sensorvorrichtung und dessen herstellungsverfahren.

Info

Publication number
DE69942040D1
DE69942040D1 DE69942040T DE69942040T DE69942040D1 DE 69942040 D1 DE69942040 D1 DE 69942040D1 DE 69942040 T DE69942040 T DE 69942040T DE 69942040 T DE69942040 T DE 69942040T DE 69942040 D1 DE69942040 D1 DE 69942040D1
Authority
DE
Germany
Prior art keywords
manufacturing
sensor device
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69942040T
Other languages
English (en)
Inventor
Naoki Yasuda
Tatsuya Fukami
Motohisa Taguchi
Yuji Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69942040D1 publication Critical patent/DE69942040D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
    • G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
    • G01P5/12—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables using variation of resistance of a heated conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
DE69942040T 1999-12-22 1999-12-22 Sensorvorrichtung und dessen herstellungsverfahren. Expired - Lifetime DE69942040D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1999/007230 WO2001046708A1 (fr) 1999-12-22 1999-12-22 Equipement de detection et son procede de fabrication

Publications (1)

Publication Number Publication Date
DE69942040D1 true DE69942040D1 (de) 2010-04-01

Family

ID=14237658

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69942040T Expired - Lifetime DE69942040D1 (de) 1999-12-22 1999-12-22 Sensorvorrichtung und dessen herstellungsverfahren.

Country Status (6)

Country Link
US (1) US6703132B1 (de)
EP (1) EP1180693B1 (de)
JP (1) JP3906689B2 (de)
KR (1) KR100633655B1 (de)
DE (1) DE69942040D1 (de)
WO (1) WO2001046708A1 (de)

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JP2003031566A (ja) * 2001-07-16 2003-01-31 Fujitsu Ltd 低誘電率絶縁膜形成用組成物、これを用いる絶縁膜形成方法、及びそれにより得られた絶縁膜を有する電子部品
JP3626469B2 (ja) * 2002-04-19 2005-03-09 三菱電機株式会社 磁気抵抗センサ装置
US7105098B1 (en) * 2002-06-06 2006-09-12 Sandia Corporation Method to control artifacts of microstructural fabrication
DE102005047414B4 (de) 2005-02-21 2012-01-05 Infineon Technologies Ag Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben
US7461559B2 (en) * 2005-03-18 2008-12-09 Citizen Holdings Co., Ltd. Electromechanical transducer and method of fabricating the same
JP4914589B2 (ja) 2005-08-26 2012-04-11 三菱電機株式会社 半導体製造装置、半導体製造方法および半導体装置
JP4739963B2 (ja) * 2006-01-18 2011-08-03 アルプス電気株式会社 車載用ｇｍｒ角度センサ
DE102006010484A1 (de) * 2006-03-07 2007-09-13 Robert Bosch Gmbh Bewegungssensor
DE102006028698B3 (de) * 2006-06-22 2007-12-13 Siemens Ag OMR-Sensor und Anordnung aus solchen Sensoren
US7872564B2 (en) * 2007-11-16 2011-01-18 Infineon Technologies Ag Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors
JP2010038905A (ja) * 2008-07-10 2010-02-18 Denso Corp センサ装置
JP6033529B2 (ja) * 2011-05-30 2016-11-30 株式会社東海理化電機製作所 検出装置および電流センサ
KR101611972B1 (ko) * 2015-01-08 2016-04-12 주식회사 현대케피코 내구성 개선을 위한 공기유량센서
JP2017120873A (ja) * 2015-12-25 2017-07-06 京セラ株式会社 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法
JP2017143092A (ja) * 2016-02-08 2017-08-17 ソニー株式会社 ガラスインタポーザモジュール、撮像装置、および電子機器
US20190128882A1 (en) * 2016-03-28 2019-05-02 Tdk Corporation Biosensor and biochip
DE102016206549A1 (de) * 2016-04-19 2017-10-19 Robert Bosch Gmbh Sensorelement für thermische Anemometrie
US10691245B2 (en) * 2016-06-22 2020-06-23 Samsung Display Co., Ltd. Touch sensor
KR102633061B1 (ko) 2016-09-23 2024-02-06 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US10533963B2 (en) * 2017-01-09 2020-01-14 Mobiosense Corp. Biosensor device
US20240019504A1 (en) * 2020-12-18 2024-01-18 Panasonic Intellectual Property Management Co., Ltd. Magnetic sensor
JP2022139466A (ja) * 2021-03-12 2022-09-26 Tdk株式会社 磁気センサ及びその製造方法

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JPS6062278A (ja) 1983-09-14 1985-04-10 Toshiba Corp イメ−ジセンサ
JPH0665983B2 (ja) 1984-09-28 1994-08-24 株式会社日立製作所 有機高分子湿度センサ
JPH07107528B2 (ja) 1986-01-14 1995-11-15 オリンパス光学工業株式会社 電界効果型半導体センサ及びその製造方法
JPS62178359A (ja) 1986-01-31 1987-08-05 Seikosha Co Ltd 通電記録ヘツド
US4732042A (en) 1986-04-22 1988-03-22 Motorola Inc. Cast membrane protected pressure sensor
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JP2542075B2 (ja) 1989-02-23 1996-10-09 三菱電機株式会社 シリコ―ンラダ―系樹脂にパタ―ンを転写する方法およびそれに用いるエッチング液
JP2718231B2 (ja) 1990-01-10 1998-02-25 三菱電機株式会社 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法
JP2753654B2 (ja) 1990-11-19 1998-05-20 理化工業株式会社 感湿素子
JPH04326032A (ja) 1991-04-25 1992-11-16 Fujikura Ltd 半導体圧力センサ
JPH05121793A (ja) 1991-10-24 1993-05-18 Nec Corp 磁気抵抗素子の製造方法
JPH05335613A (ja) * 1992-06-03 1993-12-17 Idemitsu Petrochem Co Ltd 紫外線受光デバイスおよびその製造方法
JP3073888B2 (ja) * 1993-06-17 2000-08-07 信越化学工業株式会社 チキソ性フルオロシリコーンゲル組成物
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JP3142483B2 (ja) * 1996-06-25 2001-03-07 三菱電機株式会社 密着イメージセンサ
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JPH10330188A (ja) * 1997-05-29 1998-12-15 Kobe Steel Ltd ダイヤモンドの微細加工方法
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JP3941505B2 (ja) 2000-05-15 2007-07-04 三菱電機株式会社 センサ素子及びその製造方法

Also Published As

Publication number Publication date
EP1180693A4 (de) 2002-09-25
US6703132B1 (en) 2004-03-09
EP1180693A1 (de) 2002-02-20
EP1180693B1 (de) 2010-02-17
KR20020002473A (ko) 2002-01-09
KR100633655B1 (ko) 2006-10-11
JP3906689B2 (ja) 2007-04-18
WO2001046708A1 (fr) 2001-06-28

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Legal Events

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8364 No opposition during term of opposition