DE60012592D1 - Halbleiterlaser und zugehöriges Herstellungsverfahren - Google Patents

Halbleiterlaser und zugehöriges Herstellungsverfahren

Info

Publication number
DE60012592D1
DE60012592D1 DE60012592T DE60012592T DE60012592D1 DE 60012592 D1 DE60012592 D1 DE 60012592D1 DE 60012592 T DE60012592 T DE 60012592T DE 60012592 T DE60012592 T DE 60012592T DE 60012592 D1 DE60012592 D1 DE 60012592D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
associated manufacturing
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60012592T
Other languages
English (en)
Other versions
DE60012592T2 (de
Inventor
Fumihiro Konushi
Nobuhiro Ohkubo
Shinichi Kawato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE60012592D1 publication Critical patent/DE60012592D1/de
Application granted granted Critical
Publication of DE60012592T2 publication Critical patent/DE60012592T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60012592T 1999-01-29 2000-01-28 Halbleiterlaser und Verfahren zu dessen Herstellung Expired - Lifetime DE60012592T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2103699 1999-01-29
JP2103699 1999-01-29
JP36704399A JP3692269B2 (ja) 1999-01-29 1999-12-24 半導体レーザ素子及びその製造方法
JP36704399 1999-12-24

Publications (2)

Publication Number Publication Date
DE60012592D1 true DE60012592D1 (de) 2004-09-09
DE60012592T2 DE60012592T2 (de) 2005-07-28

Family

ID=26358047

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60012592T Expired - Lifetime DE60012592T2 (de) 1999-01-29 2000-01-28 Halbleiterlaser und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US6798808B1 (de)
EP (1) EP1024566B1 (de)
JP (1) JP3692269B2 (de)
DE (1) DE60012592T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6437372B1 (en) * 2000-01-07 2002-08-20 Agere Systems Guardian Corp. Diffusion barrier spikes for III-V structures
TW554601B (en) 2001-07-26 2003-09-21 Matsushita Electric Ind Co Ltd Semiconductor laser device and method for fabricating the same
JP2003060306A (ja) * 2001-08-13 2003-02-28 Rohm Co Ltd リッジ型半導体レーザ素子
JP2003140100A (ja) 2001-11-01 2003-05-14 Oki Electric Ind Co Ltd 導波路型光素子、これを用いた集積化光導波路素子、及びその製造方法
US7801194B2 (en) * 2002-07-01 2010-09-21 Sharp Kabushiki Kaisha Semiconductor laser device and optical disk unit using the same
US7215691B2 (en) 2002-09-19 2007-05-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
KR20050082251A (ko) * 2004-02-18 2005-08-23 삼성전자주식회사 반도체 레이저 디바이스
JP2005252153A (ja) * 2004-03-08 2005-09-15 Fuji Photo Film Co Ltd 半導体レーザ素子
KR100593931B1 (ko) 2005-02-21 2006-06-30 삼성전기주식회사 반도체 레이저 소자 및 그 제조 방법
JP2006253212A (ja) * 2005-03-08 2006-09-21 Sumitomo Electric Ind Ltd 半導体レーザ
JP2006269568A (ja) * 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2006286870A (ja) * 2005-03-31 2006-10-19 Fuji Photo Film Co Ltd 半導体レーザおよびそれを用いた光通信システム
KR20070084973A (ko) * 2006-02-22 2007-08-27 삼성전기주식회사 고출력 반도체 레이저소자
JP2008235442A (ja) 2007-03-19 2008-10-02 Fujitsu Ltd 半導体発光素子及びその製造方法
KR100790718B1 (ko) 2007-11-05 2008-01-02 삼성전기주식회사 고출력 반도체 레이저소자
US10833480B2 (en) * 2018-07-03 2020-11-10 Skorpios Technologies, Inc. Diffusion blocking layer for a compound semiconductor structure

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6390186A (ja) 1986-10-02 1988-04-21 Mitsubishi Electric Corp 半導体発光装置
US5034957A (en) * 1988-02-10 1991-07-23 Kabushiki Kaisha Toshiba Semiconductor laser device
JPH0233990A (ja) 1988-07-22 1990-02-05 Nec Corp 半導体発光素子
JPH0449691A (ja) 1990-06-18 1992-02-19 Mitsubishi Electric Corp 可視光レーザダイオード
JP2950927B2 (ja) 1990-07-17 1999-09-20 三洋電機株式会社 半導体レーザ
DE69222822T2 (de) 1991-09-06 1998-03-05 Trw Inc Optoelektronische Schaltvorrichtung mit Quantentopf-Struktur und stimulierter Emission
JPH05152677A (ja) * 1991-11-28 1993-06-18 Nec Corp 半導体レーザ装置
US5568501A (en) * 1993-11-01 1996-10-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for producing the same
JP3582021B2 (ja) 1994-08-04 2004-10-27 富士通株式会社 光半導体素子
JPH09260776A (ja) 1996-03-26 1997-10-03 Mitsubishi Electric Corp 半導体光素子
US5818859A (en) * 1996-06-27 1998-10-06 Minnesota Mining And Manufacturing Company Be-containing II-VI blue-green laser diodes
JP3985283B2 (ja) * 1997-01-22 2007-10-03 ソニー株式会社 発光素子
JPH10321942A (ja) 1997-05-14 1998-12-04 Matsushita Electric Ind Co Ltd 半導体発光素子
JP3780650B2 (ja) 1997-08-05 2006-05-31 ソニー株式会社 半導体レーザの平均光出力の設定方法および半導体レーザの高周波電流の重畳条件の設定方法
JP3408413B2 (ja) * 1998-03-06 2003-05-19 松下電器産業株式会社 半導体の製造方法及び半導体装置

Also Published As

Publication number Publication date
EP1024566A2 (de) 2000-08-02
JP3692269B2 (ja) 2005-09-07
EP1024566B1 (de) 2004-08-04
EP1024566A3 (de) 2001-01-17
DE60012592T2 (de) 2005-07-28
US6798808B1 (en) 2004-09-28
JP2000286507A (ja) 2000-10-13

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