DE69920640D1 - Nitrid-Halbleiterlaser und dessen Herstellungsverfahren - Google Patents

Nitrid-Halbleiterlaser und dessen Herstellungsverfahren

Info

Publication number
DE69920640D1
DE69920640D1 DE69920640T DE69920640T DE69920640D1 DE 69920640 D1 DE69920640 D1 DE 69920640D1 DE 69920640 T DE69920640 T DE 69920640T DE 69920640 T DE69920640 T DE 69920640T DE 69920640 D1 DE69920640 D1 DE 69920640D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
nitride semiconductor
nitride
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69920640T
Other languages
English (en)
Other versions
DE69920640T2 (de
Inventor
Hiroyuki Ota
Kiyofumi Chikuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Application granted granted Critical
Publication of DE69920640D1 publication Critical patent/DE69920640D1/de
Publication of DE69920640T2 publication Critical patent/DE69920640T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
DE69920640T 1998-12-22 1999-12-21 Nitrid-Halbleiterlaser und dessen Herstellungsverfahren Expired - Fee Related DE69920640T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP36416198 1998-12-22
JP36416198 1998-12-22
JP18034499 1999-06-25
JP11180344A JP2000244068A (ja) 1998-12-22 1999-06-25 窒化物半導体レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69920640D1 true DE69920640D1 (de) 2004-11-04
DE69920640T2 DE69920640T2 (de) 2005-10-06

Family

ID=26499906

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69920640T Expired - Fee Related DE69920640T2 (de) 1998-12-22 1999-12-21 Nitrid-Halbleiterlaser und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6411636B1 (de)
EP (1) EP1014520B1 (de)
JP (1) JP2000244068A (de)
DE (1) DE69920640T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323797A (ja) 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
JP2001308460A (ja) * 2000-04-27 2001-11-02 Sharp Corp 窒化物半導体レーザ素子とその光ピックアップ装置
JP2002134827A (ja) * 2000-10-27 2002-05-10 Tdk Corp 半導体レーザ及びその製造方法並びにこれを用いた近接場光ヘッド
US6576932B2 (en) * 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
JP2002299739A (ja) 2001-04-02 2002-10-11 Pioneer Electronic Corp 窒化物半導体レーザ素子及びその製造方法
US8633093B2 (en) 2001-04-12 2014-01-21 Sumitomo Electric Industries Ltd. Oxygen doping method to gallium nitride single crystal substrate
US6773504B2 (en) 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
JP2002319545A (ja) * 2001-04-20 2002-10-31 Mitsubishi Cable Ind Ltd ＧａＮ系結晶の製造方法および結晶成長用基材
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
SG130935A1 (en) 2002-06-26 2007-04-26 Agency Science Tech & Res Method of cleaving gan/sapphire for forming laser mirror facets
JP3766085B2 (ja) * 2003-11-12 2006-04-12 ローム株式会社 半導体レーザ
JP2005317684A (ja) * 2004-04-27 2005-11-10 Eudyna Devices Inc ドライエッチング方法および半導体装置
US20060054604A1 (en) * 2004-09-10 2006-03-16 Saunders Richard J Laser process to produce drug delivery channel in metal stents
US20060165143A1 (en) * 2005-01-24 2006-07-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor laser device and manufacturing method thereof
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
KR20070027290A (ko) * 2005-09-06 2007-03-09 엘지이노텍 주식회사 발광 소자 및 그 제조 방법
US8461478B2 (en) * 2009-02-03 2013-06-11 Abbott Cardiovascular Systems, Inc. Multiple beam laser system for forming stents
US8530783B2 (en) * 2009-02-03 2013-09-10 Abbott Cardiovascular Systems Inc. Laser cutting system
US8872062B2 (en) * 2009-02-03 2014-10-28 Abbott Cardiovascular Systems Inc. Laser cutting process for forming stents
WO2011004211A1 (en) * 2009-07-08 2011-01-13 S.O.I.Tec Silicon On Insulator Technologies Composite substrate with crystalline seed layer and carrier layer with a coincident cleavage plane
US8556511B2 (en) 2010-09-08 2013-10-15 Abbott Cardiovascular Systems, Inc. Fluid bearing to support stent tubing during laser cutting
US11171055B2 (en) * 2019-01-31 2021-11-09 The Government Of The United States Of America, As Represented By The Secretary Of The Navy UV laser slicing of β-Ga2O3 by micro-crack generation and propagation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04262589A (ja) * 1991-02-15 1992-09-17 Nec Kagoshima Ltd 光半導体装置の製造方法
US5604763A (en) * 1994-04-20 1997-02-18 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor laser diode and method for producing same
JP3218963B2 (ja) * 1996-01-29 2001-10-15 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JPH09275243A (ja) * 1996-04-05 1997-10-21 Nichia Chem Ind Ltd 窒化物半導体の結晶成長方法およびレーザ素子の共振面の形成方法
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
JPH10215031A (ja) * 1997-01-30 1998-08-11 Hewlett Packard Co <Hp> 半導体レーザ素子
US6069394A (en) * 1997-04-09 2000-05-30 Matsushita Electronics Corporation Semiconductor substrate, semiconductor device and method of manufacturing the same
JP3230572B2 (ja) * 1997-05-19 2001-11-19 日亜化学工業株式会社 窒化物系化合物半導体素子の製造方法及び半導体発光素子
US6113685A (en) * 1998-09-14 2000-09-05 Hewlett-Packard Company Method for relieving stress in GaN devices
JP3659621B2 (ja) * 1999-02-08 2005-06-15 株式会社東芝 窒化物系半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
JP2000244068A (ja) 2000-09-08
EP1014520B1 (de) 2004-09-29
EP1014520A1 (de) 2000-06-28
DE69920640T2 (de) 2005-10-06
US6411636B1 (en) 2002-06-25

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee