JP2005317684A - ドライエッチング方法および半導体装置 - Google Patents
ドライエッチング方法および半導体装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 112
- 238000001312 dry etching Methods 0.000 title claims abstract description 91
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 124
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000460 chlorine Substances 0.000 claims abstract description 14
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims description 28
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 238000009616 inductively coupled plasma Methods 0.000 claims description 10
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 50
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 128
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 70
- 229910002601 GaN Inorganic materials 0.000 description 67
- 230000001681 protective effect Effects 0.000 description 39
- 239000010408 film Substances 0.000 description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 26
- 229910010271 silicon carbide Inorganic materials 0.000 description 25
- 239000007789 gas Substances 0.000 description 23
- 150000002500 ions Chemical class 0.000 description 20
- 239000010409 thin film Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- -1 InGaN Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
【解決手段】GaN系半導体結晶層11に接して設けられているエッチング層12(エッチング対象とされる層)をドライエッチングする際に、SF6またはNF3のフッ素系ガス単独、もしくはこれらのフッ素系ガスとSiCl4、BCl3、またはCl2の何れかの塩素系ガスとの混合ガスを用い、先ずエッチング層12をその深さ方向に高速(高エネルギ)エッチングしておき(第1のプロセス)、更に残りの深さ方向領域を低速(低エネルギ)エッチングする(第2のプロセス)という少なくとも2段階のエッチングプロセスを採用することとしたので、GaN系半導体結晶層11へのダメージを低減することが可能となり、初期特性変動や通電劣化のないGaN系半導体装置の実現に寄与することが可能となる。
【選択図】図1
Description
12 エッチング層
13 マスク
21、51 基板
22、52 電子走行層
23、53 電子供給層
24、54 表面保護薄膜層
25、114 保護膜
26、55、115 ソース
27、56、116 ドレイン
28、57、117 窓材
80 GaN厚膜層
81 GaN系のバッファ層
82 n型GaN層
83 量子井戸構造のキャビティであるInGaN層
84 電流制御層であるAlGaN層
85 p型GaNのコンタクト層
86a p型オーミック電極
86b n型オーミック電極
87 SiN保護層
88 ポリイミド膜
89 配線材料
111 半絶縁性のSiC基板
112 p型のSiCバッファ
113 n型のSiCチャネル層
Claims (9)
- GaN系半導体層の表面を被覆するエッチング層のドライエッチング方法であって、
前記エッチング層を所望の厚みだけ残存させてプラズマエッチングする第1のステップと、
前記エッチング層の残余部を、前記第1のステップよりも低エネルギ印加されたプラズマでエッチングして前記GaN系半導体層表面を露出させる第2のステップと、を備えていることを特徴とするドライエッチング方法。 - 前記第1または第2のステップは少なくとも2つのサブステップを備え、
前記サブステップにおけるプラズマエネルギが順次低くなるように設定されていることを特徴とする請求項1に記載のドライエッチング方法。 - 前記GaN系半導体は、GaN、InGaNまたはAlGaNであることを特徴とする請求項1または2に記載のドライエッチング方法。
- 前記ドライエッチングに用いるガスは、SF6またはNF3のフッ素系ガス単独、もしくはこれらのフッ素系ガスとSiCl4、BCl3、またはCl2の何れかの塩素系ガスとの混合ガスであることを特徴とする請求項1乃至3の何れかに記載のドライエッチング方法。
- 前記ドライエッチングは、誘導結合型プラズマ(ICP)方式または電子サイクロトロン共鳴方式(ECR)のリモートプラズマ型エッチングで実行されることを特徴とする請求項1乃至4の何れかに記載のドライエッチング方法。
- 前記エッチング層上に予めマスクを設け、前記第1および第2のステップを、前記マスクの開口領域に対して実行することを特徴とする請求項1乃至5の何れかに記載のドライエッチング方法。
- 前記ドライエッチングは、前記第1および第2のステップにより、前記エッチング層を全面エッチングすることを特徴とする請求項1乃至6の何れかに記載のドライエッチング方法。
- 前記GaN系半導体層は、HEMT、MESFET、またはVCSELのキャリア走行領域を構成するものであることを特徴とする請求項1乃至7の何れかに記載のドライエッチング方法。
- 請求項1乃至8の何れかに記載のドライエッチング方法を用いて製造された半導体装置。
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JP2004132124A JP2005317684A (ja) | 2004-04-27 | 2004-04-27 | ドライエッチング方法および半導体装置 |
US11/115,272 US20050236365A1 (en) | 2004-04-27 | 2005-04-27 | Dry etching method and semiconductor device |
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JP2004132124A JP2005317684A (ja) | 2004-04-27 | 2004-04-27 | ドライエッチング方法および半導体装置 |
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Cited By (5)
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JP2008288289A (ja) * | 2007-05-16 | 2008-11-27 | Oki Electric Ind Co Ltd | 電界効果トランジスタとその製造方法 |
JP2010258442A (ja) * | 2009-03-31 | 2010-11-11 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ、電界効果トランジスタの製造方法、および溝の形成方法 |
US8987076B2 (en) | 2013-03-27 | 2015-03-24 | Mitsubishi Electric Corporation | Method of manufacturing transistor |
WO2018096898A1 (ja) * | 2016-11-24 | 2018-05-31 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP7323476B2 (ja) | 2020-02-19 | 2023-08-08 | 住友電気工業株式会社 | 半導体装置の製造方法 |
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WO2007052273A2 (en) * | 2005-11-02 | 2007-05-10 | Ben Gurion University Of The Negev Research And Development Authority | Novel material and process for integrated ion chip |
US8338308B2 (en) * | 2008-12-19 | 2012-12-25 | The Board Of Trustees Of The University Of Illinois | Method of plasma etching Ga-based compound semiconductors |
CN102456545A (zh) * | 2010-10-21 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 图形化衬底的刻蚀方法 |
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2004
- 2004-04-27 JP JP2004132124A patent/JP2005317684A/ja active Pending
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2005
- 2005-04-27 US US11/115,272 patent/US20050236365A1/en not_active Abandoned
Cited By (9)
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JP2008288289A (ja) * | 2007-05-16 | 2008-11-27 | Oki Electric Ind Co Ltd | 電界効果トランジスタとその製造方法 |
JP2010258442A (ja) * | 2009-03-31 | 2010-11-11 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ、電界効果トランジスタの製造方法、および溝の形成方法 |
US8987076B2 (en) | 2013-03-27 | 2015-03-24 | Mitsubishi Electric Corporation | Method of manufacturing transistor |
WO2018096898A1 (ja) * | 2016-11-24 | 2018-05-31 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP2018085455A (ja) * | 2016-11-24 | 2018-05-31 | 日機装株式会社 | 半導体発光素子の製造方法 |
KR20190082913A (ko) * | 2016-11-24 | 2019-07-10 | 니기소 가부시키가이샤 | 반도체 발광 소자의 제조 방법 |
US10720547B2 (en) | 2016-11-24 | 2020-07-21 | Nikkiso Co., Ltd. | Method of manufacturing semiconductor light emitting device |
KR102220345B1 (ko) | 2016-11-24 | 2021-02-24 | 니기소 가부시키가이샤 | 반도체 발광 소자의 제조 방법 |
JP7323476B2 (ja) | 2020-02-19 | 2023-08-08 | 住友電気工業株式会社 | 半導体装置の製造方法 |
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