DE60144265D1 - Halbleiterbauelement und dessen herstelllung - Google Patents
Halbleiterbauelement und dessen herstelllungInfo
- Publication number
- DE60144265D1 DE60144265D1 DE60144265T DE60144265T DE60144265D1 DE 60144265 D1 DE60144265 D1 DE 60144265D1 DE 60144265 T DE60144265 T DE 60144265T DE 60144265 T DE60144265 T DE 60144265T DE 60144265 D1 DE60144265 D1 DE 60144265D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0811—MIS diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3211—Nitridation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000014288 | 2000-01-24 | ||
PCT/JP2001/000458 WO2001054199A1 (fr) | 2000-01-24 | 2001-01-24 | Dispositif a semiconducteur et procede de fabrication correspondant |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60144265D1 true DE60144265D1 (de) | 2011-05-05 |
Family
ID=18541766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60144265T Expired - Lifetime DE60144265D1 (de) | 2000-01-24 | 2001-01-24 | Halbleiterbauelement und dessen herstelllung |
Country Status (7)
Country | Link |
---|---|
US (2) | US6649958B2 (de) |
EP (1) | EP1164640B1 (de) |
JP (1) | JP4839562B2 (de) |
KR (1) | KR100758835B1 (de) |
DE (1) | DE60144265D1 (de) |
TW (1) | TW557569B (de) |
WO (1) | WO2001054199A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4257055B2 (ja) * | 2001-11-15 | 2009-04-22 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP4880867B2 (ja) * | 2002-04-10 | 2012-02-22 | セイコーインスツル株式会社 | 薄膜メモリ、アレイとその動作方法および製造方法 |
JP2004152796A (ja) | 2002-10-28 | 2004-05-27 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3944455B2 (ja) * | 2003-01-31 | 2007-07-11 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JP2005183696A (ja) * | 2003-12-19 | 2005-07-07 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2005260163A (ja) * | 2004-03-15 | 2005-09-22 | Fujitsu Ltd | 容量素子及びその製造方法並びに半導体装置及びその製造方法 |
US7109090B1 (en) * | 2005-03-07 | 2006-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pyramid-shaped capacitor structure |
GB2443677B (en) * | 2006-11-07 | 2011-06-08 | Filtronic Compound Semiconductors Ltd | A capacitor |
US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
JP2015133392A (ja) * | 2014-01-10 | 2015-07-23 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
CN104851776A (zh) * | 2014-02-14 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | MiS电容器结构及其制造方法 |
JP2015195337A (ja) * | 2014-03-28 | 2015-11-05 | ローム株式会社 | ディスクリートキャパシタおよびその製造方法 |
JP2019071468A (ja) * | 2014-03-28 | 2019-05-09 | ローム株式会社 | ディスクリートキャパシタおよびその製造方法 |
JP6819894B2 (ja) * | 2016-11-08 | 2021-01-27 | 株式会社村田製作所 | 電子部品 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5372429A (en) * | 1976-12-09 | 1978-06-27 | Toshiba Corp | Non-volatile semiconductor memory unit |
FR2493045A1 (fr) * | 1980-10-23 | 1982-04-30 | Thomson Csf | Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication |
JPS57190345A (en) * | 1981-05-20 | 1982-11-22 | Nec Corp | Semiconductor device |
US4466177A (en) * | 1983-06-30 | 1984-08-21 | International Business Machines Corporation | Storage capacitor optimization for one device FET dynamic RAM cell |
JPS6018948A (ja) * | 1983-07-12 | 1985-01-31 | Nec Corp | 半導体集積回路装置 |
JP2668528B2 (ja) * | 1987-01-16 | 1997-10-27 | ローム 株式会社 | 半導体装置の製造方法 |
JPH01140653A (ja) * | 1987-11-27 | 1989-06-01 | Hitachi Ltd | 半導体装置とその製造方法 |
US4805071A (en) * | 1987-11-30 | 1989-02-14 | Texas Instruments Incorporated | High voltage capacitor for integrated circuits |
JPH01235364A (ja) * | 1988-03-16 | 1989-09-20 | Nec Corp | コンデンサの製造方法 |
US5576565A (en) * | 1993-03-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | MIS capacitor and a semiconductor device utilizing said MIS capacitor |
US5814850A (en) * | 1995-08-22 | 1998-09-29 | Nippon Steel Corporation | Semiconductor device including a capacitor responsible for a power supply voltage to semiconductor device and capable of blocking an increased voltage |
JP3695029B2 (ja) * | 1996-08-14 | 2005-09-14 | ソニー株式会社 | 半導体装置の製造方法 |
JP3700298B2 (ja) * | 1996-12-10 | 2005-09-28 | ソニー株式会社 | 半導体装置およびその製造方法 |
JPH1167927A (ja) * | 1997-06-09 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3978817B2 (ja) * | 1997-07-17 | 2007-09-19 | ソニー株式会社 | 半導体装置の製造方法 |
JPH11110992A (ja) * | 1997-10-03 | 1999-04-23 | Toshiba Corp | 昇圧回路、半導体装置及びその製造方法 |
JP3738816B2 (ja) * | 1999-04-06 | 2006-01-25 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
-
2001
- 2001-01-18 TW TW090101128A patent/TW557569B/zh not_active IP Right Cessation
- 2001-01-24 JP JP2001553589A patent/JP4839562B2/ja not_active Expired - Fee Related
- 2001-01-24 DE DE60144265T patent/DE60144265D1/de not_active Expired - Lifetime
- 2001-01-24 US US09/937,358 patent/US6649958B2/en not_active Expired - Lifetime
- 2001-01-24 KR KR1020017012131A patent/KR100758835B1/ko active IP Right Grant
- 2001-01-24 EP EP01901541A patent/EP1164640B1/de not_active Expired - Lifetime
- 2001-01-24 WO PCT/JP2001/000458 patent/WO2001054199A1/ja active Application Filing
-
2002
- 2002-12-23 US US10/327,834 patent/US6858513B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1164640B1 (de) | 2011-03-23 |
US20030127675A1 (en) | 2003-07-10 |
JP4839562B2 (ja) | 2011-12-21 |
US6649958B2 (en) | 2003-11-18 |
US20030006442A1 (en) | 2003-01-09 |
KR20010110682A (ko) | 2001-12-13 |
EP1164640A1 (de) | 2001-12-19 |
TW557569B (en) | 2003-10-11 |
US6858513B2 (en) | 2005-02-22 |
EP1164640A4 (de) | 2007-09-26 |
WO2001054199A1 (fr) | 2001-07-26 |
KR100758835B1 (ko) | 2007-09-19 |
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