AU2001241108A1 - Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element - Google Patents

Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element

Info

Publication number
AU2001241108A1
AU2001241108A1 AU2001241108A AU4110801A AU2001241108A1 AU 2001241108 A1 AU2001241108 A1 AU 2001241108A1 AU 2001241108 A AU2001241108 A AU 2001241108A AU 4110801 A AU4110801 A AU 4110801A AU 2001241108 A1 AU2001241108 A1 AU 2001241108A1
Authority
AU
Australia
Prior art keywords
iii nitride
compoundsemiconductor
production method
compound semiconductor
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001241108A
Inventor
Toshio Hiramatsu
Masayoshi Koike
Seiji Nagai
Yuta Tezen
Hiroshi Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000071351A external-priority patent/JP4016566B2/en
Priority claimed from JP2000071353A external-priority patent/JP2001267245A/en
Priority claimed from JP2000071352A external-priority patent/JP2001267244A/en
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001241108A1 publication Critical patent/AU2001241108A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
AU2001241108A 2000-03-14 2001-03-12 Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element Abandoned AU2001241108A1 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2000-71353 2000-03-14
JP2000-71351 2000-03-14
JP2000-71352 2000-03-14
JP2000071351A JP4016566B2 (en) 2000-03-14 2000-03-14 Group III nitride compound semiconductor manufacturing method and group III nitride compound semiconductor device
JP2000071353A JP2001267245A (en) 2000-03-14 2000-03-14 Method of manufacturing group iii nitride-based compound semiconductor and group iii nitride-based compound semiconductor device
JP2000071352A JP2001267244A (en) 2000-03-14 2000-03-14 Method of manufacturing group iii nitride-based compound semiconductor and group iii nitride-based compound semiconductor device
JP2000099950 2000-03-31
JP2000-99950 2000-03-31
PCT/JP2001/001928 WO2001069663A1 (en) 2000-03-14 2001-03-12 Production method of iii nitride compound semiconductor and iii nitride compound semiconductor element

Publications (1)

Publication Number Publication Date
AU2001241108A1 true AU2001241108A1 (en) 2001-09-24

Family

ID=27481119

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001241108A Abandoned AU2001241108A1 (en) 2000-03-14 2001-03-12 Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element

Country Status (7)

Country Link
US (1) US7141444B2 (en)
EP (1) EP1265273A4 (en)
KR (1) KR20020084194A (en)
CN (1) CN1213462C (en)
AU (1) AU2001241108A1 (en)
TW (1) TW501289B (en)
WO (1) WO2001069663A1 (en)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
KR100497890B1 (en) * 2002-08-19 2005-06-29 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method for thereof
JP4229005B2 (en) * 2003-06-26 2009-02-25 住友電気工業株式会社 GaN substrate, method of manufacturing the same, and nitride semiconductor device
KR100714639B1 (en) 2003-10-21 2007-05-07 삼성전기주식회사 light emitting device
KR100512580B1 (en) * 2003-12-31 2005-09-06 엘지전자 주식회사 Method of growing nitride semiconductor thin film having small defects
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
EP1794813B1 (en) * 2004-08-26 2015-05-20 LG Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
JP4462249B2 (en) * 2005-09-22 2010-05-12 ソニー株式会社 Light emitting diode manufacturing method, integrated light emitting diode manufacturing method, and nitride III-V compound semiconductor growth method
KR100706944B1 (en) * 2005-10-17 2007-04-12 삼성전기주식회사 Nitride semiconductor light emitting device
US20090233414A1 (en) * 2005-10-20 2009-09-17 Shah Pankaj B Method for fabricating group III-nitride high electron mobility transistors (HEMTs)
TW200845135A (en) * 2006-12-12 2008-11-16 Univ California Crystal growth of M-plane and semi-polar planes of (Al, In, Ga, B)N on various substrates
KR101510377B1 (en) * 2008-01-21 2015-04-06 엘지이노텍 주식회사 Method for manufacturing nitride semiconductor and light emitting device having vertical structure
JP5180050B2 (en) * 2008-12-17 2013-04-10 スタンレー電気株式会社 Manufacturing method of semiconductor device
KR101055090B1 (en) * 2009-03-02 2011-08-08 엘지이노텍 주식회사 Semiconductor light emitting device and manufacturing method thereof
TWI427699B (en) * 2009-04-14 2014-02-21 Academia Sinica Group iii-nitride semiconductor layer, group iii-nitride semiconductor device and manufacturing method thereof
CN101877377B (en) * 2009-04-30 2011-12-14 比亚迪股份有限公司 Epitaxial wafer of discrete light-emitting diode and manufacturing method thereof
KR101047617B1 (en) * 2009-05-21 2011-07-07 엘지이노텍 주식회사 Semiconductor light emitting device and manufacturing method thereof
KR20120036816A (en) * 2009-06-01 2012-04-18 미쓰비시 가가꾸 가부시키가이샤 Nitride semiconductor crystal and method for manufacturing same
JP2012530027A (en) * 2009-06-15 2012-11-29 コリア エレクトロニクス テクノロジ インスティチュート Heterogeneous substrate, nitride semiconductor device using the same, and manufacturing method thereof
US8133803B2 (en) * 2009-06-23 2012-03-13 Academia Sinica Method for fabricating semiconductor substrates and semiconductor devices
FI123319B (en) * 2009-09-10 2013-02-28 Optogan Oy A method for reducing internal mechanical stresses in a semiconductor structure and a semiconductor structure with low mechanical stresses
JP5310534B2 (en) 2009-12-25 2013-10-09 豊田合成株式会社 Method for producing group III nitride semiconductor
EP2579297B1 (en) * 2010-06-07 2020-12-16 Soko Kagaku Co., Ltd. Method of producing template for epitaxial growth and nitride semiconductor device
CN102315347B (en) * 2010-07-05 2014-01-29 展晶科技(深圳)有限公司 Light emitting diode epitaxial structure and manufacture method thereof
TWI501421B (en) * 2010-09-21 2015-09-21 Epistar Corp Optoelectronic device and method for manufacturing the same
EP2668662B1 (en) * 2011-01-25 2019-07-03 LG Innotek Co., Ltd. Semiconductor device and method for growing semiconductor crystal
US8507947B2 (en) 2011-12-09 2013-08-13 Power Integrations, Inc. High quality GaN high-voltage HFETS on silicon
CN103243389B (en) 2012-02-08 2016-06-08 丰田合成株式会社 Manufacture the method for group III nitride semiconductor monocrystalline and manufacture the method for GaN substrate
US9123533B2 (en) * 2012-08-10 2015-09-01 Avogy, Inc. Method and system for in-situ etch and regrowth in gallium nitride based devices
CN103681233B (en) * 2012-09-05 2016-06-15 无锡华润上华半导体有限公司 The making method of a kind of many grooves structure
JP6208416B2 (en) * 2012-09-10 2017-10-04 豊田合成株式会社 Manufacturing method of GaN semiconductor single crystal
CN103050588A (en) * 2013-01-18 2013-04-17 映瑞光电科技(上海)有限公司 LED (light emitting diode) and manufacturing method thereof
JP5999443B2 (en) 2013-06-07 2016-09-28 豊田合成株式会社 Group III nitride semiconductor crystal manufacturing method and GaN substrate manufacturing method
JP6015566B2 (en) 2013-06-11 2016-10-26 豊田合成株式会社 Group III nitride semiconductor etching method, group III nitride semiconductor crystal manufacturing method, and GaN substrate manufacturing method
TWI597863B (en) * 2013-10-22 2017-09-01 晶元光電股份有限公司 Light-emitting device and manufacturing method thereof
CN103681795B (en) * 2013-12-27 2017-03-15 苏州晶湛半导体有限公司 III nitride semiconductor structure and its manufacture method
JP6212203B2 (en) * 2014-04-14 2017-10-11 住友化学株式会社 Manufacturing method of nitride semiconductor single crystal substrate
WO2016018288A1 (en) 2014-07-30 2016-02-04 Hewlett-Packard Development Company, L.P. Hybrid multilayer device
US10658177B2 (en) * 2015-09-03 2020-05-19 Hewlett Packard Enterprise Development Lp Defect-free heterogeneous substrates
WO2017123245A1 (en) 2016-01-15 2017-07-20 Hewlett Packard Enterprise Development Lp Multilayer device
CN107227490B (en) * 2016-03-23 2021-06-18 松下知识产权经营株式会社 Group III nitride semiconductor and method for producing same
WO2017171737A1 (en) 2016-03-30 2017-10-05 Hewlett Packard Enterprise Development Lp Devices having substrates with selective airgap regions
US10381801B1 (en) 2018-04-26 2019-08-13 Hewlett Packard Enterprise Development Lp Device including structure over airgap
DE102018111227A1 (en) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Method for cutting an epitaxially grown semiconductor body and semiconductor chip
JP7089176B2 (en) * 2018-06-26 2022-06-22 日亜化学工業株式会社 Method of forming aluminum nitride film
JP7133786B2 (en) * 2018-10-29 2022-09-09 パナソニックＩｐマネジメント株式会社 III-nitride semiconductor and manufacturing method thereof
CN115036366A (en) * 2021-03-05 2022-09-09 联华电子股份有限公司 Semiconductor device and method for fabricating the same

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143944B2 (en) 1972-03-15 1976-11-25
JPS51137393A (en) 1975-05-22 1976-11-27 Mitsubishi Electric Corp Manufacturing method for semiconductor light emitting device
JPS5534646A (en) 1978-08-30 1980-03-11 Sumitomo Metal Ind Ltd Heating method for furnace body in blowing-in of shaft furnace
JPS57115849A (en) 1981-01-12 1982-07-19 Fujitsu Ltd Manufacture of substrate for semiconductor device
JPS5833882A (en) 1981-08-21 1983-02-28 Mitsubishi Electric Corp Manufacture of light emitting diode
JPH01316459A (en) 1988-06-15 1989-12-21 Murata Mfg Co Ltd In-line sputtering device and method
JP2768988B2 (en) 1989-08-17 1998-06-25 三菱電機株式会社 End face coating method
JPH06105797B2 (en) 1989-10-19 1994-12-21 昭和電工株式会社 Semiconductor substrate and manufacturing method thereof
JP2623464B2 (en) 1990-04-27 1997-06-25 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
JPH0484418A (en) 1990-07-27 1992-03-17 Nec Corp Method of heteroepitaxial development of iii-v group compound semiconductor for different types of substrates
JPH04303920A (en) 1991-03-29 1992-10-27 Nec Corp Insulating film/iii-v compound semiconductor stacked structure on group iv substrate
JP2954743B2 (en) 1991-05-30 1999-09-27 京セラ株式会社 Method for manufacturing semiconductor light emitting device
JPH05110206A (en) 1991-10-16 1993-04-30 Kubota Corp Method and apparatus for producing light emitting semiconductor element
JP3352712B2 (en) 1991-12-18 2002-12-03 浩 天野 Gallium nitride based semiconductor device and method of manufacturing the same
JPH05283744A (en) 1991-12-20 1993-10-29 Toshiba Corp Semiconductor element
JP2751963B2 (en) 1992-06-10 1998-05-18 日亜化学工業株式会社 Method for growing indium gallium nitride semiconductor
JPH07249830A (en) 1994-03-10 1995-09-26 Hitachi Ltd Manufacture of semiconductor light-emitting element
JPH07273367A (en) 1994-04-01 1995-10-20 Mitsubishi Cable Ind Ltd Manufacture of semiconductor substrate and light-emitting device
JP3974667B2 (en) 1994-08-22 2007-09-12 ローム株式会社 Manufacturing method of semiconductor light emitting device
JPH0864791A (en) 1994-08-23 1996-03-08 Matsushita Electric Ind Co Ltd Epitaxial growth method
JP3326545B2 (en) 1994-09-30 2002-09-24 ローム株式会社 Semiconductor light emitting device
JPH08222812A (en) 1995-02-17 1996-08-30 Matsushita Electric Ind Co Ltd Method for crystal growth of gallium nitride based compound semiconductor
JPH08274411A (en) 1995-03-31 1996-10-18 Hitachi Ltd Semiconductor laser
JP3830051B2 (en) 1995-09-18 2006-10-04 株式会社 日立製作所 Nitride semiconductor substrate manufacturing method, nitride semiconductor substrate, optical semiconductor device manufacturing method, and optical semiconductor device
JP3396356B2 (en) 1995-12-11 2003-04-14 三菱電機株式会社 Semiconductor device and method of manufacturing the same
JP3712770B2 (en) 1996-01-19 2005-11-02 豊田合成株式会社 Method for manufacturing group 3 nitride semiconductor and semiconductor device
US5798536A (en) 1996-01-25 1998-08-25 Rohm Co., Ltd. Light-emitting semiconductor device and method for manufacturing the same
JPH1065270A (en) 1996-08-13 1998-03-06 Toshiba Corp Semiconductor element employing nitride based semiconductor
JP3139445B2 (en) 1997-03-13 2001-02-26 日本電気株式会社 GaN-based semiconductor growth method and GaN-based semiconductor film
JPH11191657A (en) 1997-04-11 1999-07-13 Nichia Chem Ind Ltd Growing method of nitride semiconductor and nitride semiconductor device
EP2234142A1 (en) 1997-04-11 2010-09-29 Nichia Corporation Nitride semiconductor substrate
DE19715572A1 (en) 1997-04-15 1998-10-22 Telefunken Microelectron Selective epitaxy of III-V nitride semiconductor layers
JPH10321954A (en) 1997-05-15 1998-12-04 Fuji Electric Co Ltd Group iii nitride semiconductor element and manufacture thereof
JP3551751B2 (en) 1997-05-16 2004-08-11 日亜化学工業株式会社 Method for growing nitride semiconductor
KR20010021496A (en) 1997-07-03 2001-03-15 추후제출 Elimination of defects in epitaxial films
JP3189877B2 (en) 1997-07-11 2001-07-16 日本電気株式会社 Crystal growth method of low dislocation gallium nitride
JPH1143398A (en) 1997-07-22 1999-02-16 Mitsubishi Cable Ind Ltd Substrate for growing gallium nitride-based crystal and use thereof
JP3930161B2 (en) 1997-08-29 2007-06-13 株式会社東芝 Nitride-based semiconductor device, light-emitting device, and manufacturing method thereof
JPH11135770A (en) 1997-09-01 1999-05-21 Sumitomo Chem Co Ltd Iii-v compd. semiconductor, manufacture thereof and semiconductor element
JPH11145519A (en) 1997-09-02 1999-05-28 Toshiba Corp Semiconductor light-emitting element, semiconductor light-emitting device, and image-display device
JP3491538B2 (en) 1997-10-09 2004-01-26 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
JPH11135832A (en) 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd Gallium nitride group compound semiconductor and manufacture therefor
JP3036495B2 (en) 1997-11-07 2000-04-24 豊田合成株式会社 Method for manufacturing gallium nitride-based compound semiconductor
JP3456413B2 (en) 1997-11-26 2003-10-14 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
JP3620269B2 (en) 1998-02-27 2005-02-16 豊田合成株式会社 GaN-based semiconductor device manufacturing method
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
JP3839580B2 (en) 1998-03-09 2006-11-01 株式会社リコー Manufacturing method of semiconductor substrate
JPH11274082A (en) 1998-03-24 1999-10-08 Fuji Electric Co Ltd Group iii nitride semiconductor and fabrication thereof, and group iii nitride semiconductor device
JPH11274649A (en) 1998-03-26 1999-10-08 Hitachi Ltd Semiconductor optical element and manufacture thereof
US6500257B1 (en) 1998-04-17 2002-12-31 Agilent Technologies, Inc. Epitaxial material grown laterally within a trench and method for producing same
JP3436128B2 (en) 1998-04-28 2003-08-11 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
JPH11330546A (en) 1998-05-12 1999-11-30 Fuji Electric Co Ltd Iii nitride semiconductor material and its manufacture
JP4390090B2 (en) 1998-05-18 2009-12-24 シャープ株式会社 GaN crystal film manufacturing method
JP3460581B2 (en) 1998-05-28 2003-10-27 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
WO2000004615A1 (en) 1998-07-14 2000-01-27 Fujitsu Limited Semiconductor laser, semiconductor device, and method for manufacturing the same
US6319742B1 (en) 1998-07-29 2001-11-20 Sanyo Electric Co., Ltd. Method of forming nitride based semiconductor layer
JP3316479B2 (en) 1998-07-29 2002-08-19 三洋電機株式会社 Semiconductor device, semiconductor light emitting device, and method of manufacturing semiconductor device
JP3987660B2 (en) 1998-07-31 2007-10-10 シャープ株式会社 Nitride semiconductor structure, manufacturing method thereof, and light emitting device
JP2000044121A (en) 1998-08-03 2000-02-15 Murata Mach Ltd Sliver guide creel for spinning machine
JP3592553B2 (en) 1998-10-15 2004-11-24 株式会社東芝 Gallium nitride based semiconductor device
JP2000150959A (en) 1998-11-18 2000-05-30 Hitachi Ltd Gallium nitride compound semiconductor light emitting element
JP2000174393A (en) 1998-12-04 2000-06-23 Fuji Electric Co Ltd Group iii nitride semiconductor, its manufacture and group iii nitride semiconductor device
JP4304750B2 (en) 1998-12-08 2009-07-29 日亜化学工業株式会社 Nitride semiconductor growth method and nitride semiconductor device
JP3659050B2 (en) 1998-12-21 2005-06-15 日亜化学工業株式会社 Nitride semiconductor growth method and nitride semiconductor device
JP2000261106A (en) 1999-01-07 2000-09-22 Matsushita Electric Ind Co Ltd Semiconductor light emitting element, its manufacture and optical disk device
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
JP3594826B2 (en) 1999-02-09 2004-12-02 パイオニア株式会社 Nitride semiconductor light emitting device and method of manufacturing the same
JP3432444B2 (en) 1999-02-25 2003-08-04 シャープ株式会社 Semiconductor light emitting device
KR100677683B1 (en) 1999-03-17 2007-02-05 미츠비시 덴센 고교 가부시키가이샤 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
JP4288743B2 (en) 1999-03-24 2009-07-01 日亜化学工業株式会社 Nitride semiconductor growth method
TW464953B (en) 1999-04-14 2001-11-21 Matsushita Electronics Corp Method of manufacturing III nitride base compound semiconductor substrate
JP4231189B2 (en) 1999-04-14 2009-02-25 パナソニック株式会社 Method for producing group III nitride compound semiconductor substrate
JP2001044121A (en) 1999-06-07 2001-02-16 Agilent Technol Inc Epitaxial layer structure and manufacture thereof
JP3786544B2 (en) 1999-06-10 2006-06-14 パイオニア株式会社 Nitride semiconductor device manufacturing method and device manufactured by the method
JP2000357820A (en) 1999-06-15 2000-12-26 Pioneer Electronic Corp Gallium nitride semiconductor light emitting element and its manufacture
JP3791246B2 (en) 1999-06-15 2006-06-28 日亜化学工業株式会社 Nitride semiconductor growth method, nitride semiconductor device manufacturing method using the same, and nitride semiconductor laser device manufacturing method
JP4005275B2 (en) 1999-08-19 2007-11-07 日亜化学工業株式会社 Nitride semiconductor device
JP4274504B2 (en) 1999-09-20 2009-06-10 キヤノン株式会社 Semiconductor thin film structure
JP2001111174A (en) * 1999-10-06 2001-04-20 Fuji Photo Film Co Ltd Substrate for semiconductor device and method of fabrication thereof and semiconductor device using that substrate
JP4055304B2 (en) 1999-10-12 2008-03-05 豊田合成株式会社 Method for producing gallium nitride compound semiconductor
JP2001122693A (en) 1999-10-22 2001-05-08 Nec Corp Ground substrate for crystal growth and method of producing substrate using the same
JP3518455B2 (en) 1999-12-15 2004-04-12 日亜化学工業株式会社 Method for manufacturing nitride semiconductor substrate
JP4432180B2 (en) * 1999-12-24 2010-03-17 豊田合成株式会社 Group III nitride compound semiconductor manufacturing method, group III nitride compound semiconductor device, and group III nitride compound semiconductor
US6355497B1 (en) 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth

Also Published As

Publication number Publication date
EP1265273A1 (en) 2002-12-11
US7141444B2 (en) 2006-11-28
CN1429401A (en) 2003-07-09
TW501289B (en) 2002-09-01
US20030134446A1 (en) 2003-07-17
CN1213462C (en) 2005-08-03
WO2001069663A1 (en) 2001-09-20
KR20020084194A (en) 2002-11-04
EP1265273A4 (en) 2009-05-06

Similar Documents

Publication Publication Date Title
AU2001244643A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001241108A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001236076A1 (en) Production method of iii nitride compound semiconductor substrate and semiconductor device
AU2001232341A1 (en) Iii nitride compound semiconductor element and electrode forming method
AU2001248803A1 (en) Method of manufacturing group-iii nitride compound semiconductor device
AU2001234169A1 (en) Group iii nitride compound semiconductor and method for manufacturing the same
AU2001247389A1 (en) Iii-v nitride substrate boule and method of making and using the same
AU2637801A (en) Methods of forming semiconductor structures
AU2002306289A1 (en) Method of manufacturing silicon
SG91351A1 (en) Group iii-v compound semiconductor and method of producing the same
AU2001273116A1 (en) Semiconductor device and method of formation
AU2002300205A1 (en) Method of manufacturing methanol
AU2001277779A1 (en) Semiconductor device and method of its manufacture
AU2002300204A1 (en) Method of manufacturing methanol
AU2002354108A1 (en) Method of manufacturing semiconductor chip
AU2002213012A1 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
AU2002228766A1 (en) Semiconductor device and method of making same
AU2003257718A1 (en) Nitride semiconductor and fabrication method thereof
AU2002229106A1 (en) Semiconductor tiling structure and method of formation
AU2002348933A1 (en) Heterojunction semiconductor device and method of manufacturing such device
AU2001263382A1 (en) Semiconductor component and method of manufacturing
AU2002221041A1 (en) Semiconductor package and its manufacturing method
AU2001228168A1 (en) Method of manufacturing power silicon transistor
AU2001261345A1 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
AU2002328641A1 (en) Nitride semiconductor element and production method for nitride semiconductor element