AU2001248803A1 - Method of manufacturing group-iii nitride compound semiconductor device - Google Patents

Method of manufacturing group-iii nitride compound semiconductor device

Info

Publication number
AU2001248803A1
AU2001248803A1 AU2001248803A AU4880301A AU2001248803A1 AU 2001248803 A1 AU2001248803 A1 AU 2001248803A1 AU 2001248803 A AU2001248803 A AU 2001248803A AU 4880301 A AU4880301 A AU 4880301A AU 2001248803 A1 AU2001248803 A1 AU 2001248803A1
Authority
AU
Australia
Prior art keywords
semiconductor device
compound semiconductor
iii nitride
nitride compound
manufacturing group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001248803A
Inventor
Shizuyo Asami
Toshiaki Chiyo
Jun Ito
Masanobu Senda
Naoki Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001248803A1 publication Critical patent/AU2001248803A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
AU2001248803A 2000-04-21 2001-04-20 Method of manufacturing group-iii nitride compound semiconductor device Abandoned AU2001248803A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-121692 2000-04-21
JP2000121692A JP3994623B2 (en) 2000-04-21 2000-04-21 Method for producing group III nitride compound semiconductor device
PCT/JP2001/003387 WO2001082347A1 (en) 2000-04-21 2001-04-20 Method of manufacturing group-iii nitride compound semiconductor device

Publications (1)

Publication Number Publication Date
AU2001248803A1 true AU2001248803A1 (en) 2001-11-07

Family

ID=18632302

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001248803A Abandoned AU2001248803A1 (en) 2000-04-21 2001-04-20 Method of manufacturing group-iii nitride compound semiconductor device

Country Status (9)

Country Link
US (1) US6830949B2 (en)
EP (1) EP1296363B1 (en)
JP (1) JP3994623B2 (en)
KR (1) KR100504161B1 (en)
CN (1) CN1189919C (en)
AU (1) AU2001248803A1 (en)
DE (1) DE60121768T2 (en)
TW (1) TW490866B (en)
WO (1) WO2001082347A1 (en)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3866540B2 (en) * 2001-07-06 2007-01-10 株式会社東芝 Nitride semiconductor device and manufacturing method thereof
CN1805230B (en) * 2004-12-20 2011-06-01 夏普株式会社 Nitride semiconductor light-emitting device and method for fabrication thereof
JP2007142176A (en) * 2005-11-18 2007-06-07 Seiko Epson Corp Manufacturing method of optical module
JP5281408B2 (en) * 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド Doped aluminum nitride crystal and method for producing the same
JP4637781B2 (en) 2006-03-31 2011-02-23 昭和電工株式会社 GaN-based semiconductor light emitting device manufacturing method
JP2008047762A (en) * 2006-08-18 2008-02-28 Showa Denko Kk Group iii nitride compound semiconductor light emitting element, process for fabricating the same, and lamp
JP2008047763A (en) * 2006-08-18 2008-02-28 Showa Denko Kk Group iii nitride compound semiconductor light emitting element, process for fabricating the same, and lamp
TWI408733B (en) * 2006-08-18 2013-09-11 Toyoda Gosei Kk Process for producing iii group nitride compound semiconductor, iii group nitride compound semiconductor light emitting element, and lamp
JP2008106316A (en) * 2006-10-26 2008-05-08 Showa Denko Kk Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp
JP2008109084A (en) * 2006-09-26 2008-05-08 Showa Denko Kk Method for manufacturing group iii nitride compound semiconductor light-emitting device, the group iii nitride compound semiconductor light-emitting device, and lamp
JP4974635B2 (en) * 2006-10-06 2012-07-11 昭和電工株式会社 Film forming method of group III nitride compound semiconductor multilayer structure
WO2008041499A1 (en) * 2006-09-29 2008-04-10 Showa Denko K.K. Filming method for iii-group nitride semiconductor laminated structure
JP2008091470A (en) * 2006-09-29 2008-04-17 Showa Denko Kk Method for forming film of group iii nitride compound semiconductor laminated structure
JP2008098245A (en) * 2006-10-06 2008-04-24 Showa Denko Kk Film forming method of group iii nitride compound semiconductor laminate structure
US7964895B2 (en) * 2006-10-05 2011-06-21 International Rectifier Corporation III-nitride heterojunction semiconductor device and method of fabrication
JP2009054767A (en) * 2006-10-10 2009-03-12 Showa Denko Kk Laminate structure of group iii nitride semiconductor, manufacturing method thereof, semiconductor light-emitting element, and lamp
JP2008115463A (en) * 2006-10-10 2008-05-22 Showa Denko Kk Layered structure of semiconductor of group iii nitride, production method therefor, semiconductor light-emitting element and lamp
WO2008054995A2 (en) * 2006-10-18 2008-05-08 Nitek, Inc. Vertical deep ultraviolet light emitting diodes
JP2008124060A (en) 2006-11-08 2008-05-29 Showa Denko Kk Group iii nitride compound semiconductor light-emitting element and manufacturing method thereof, and lamp
JP5156305B2 (en) * 2006-11-24 2013-03-06 昭和電工株式会社 Group III nitride compound semiconductor light emitting device manufacturing apparatus and group III nitride compound semiconductor light emitting device manufacturing method
JP2008153603A (en) 2006-12-20 2008-07-03 Showa Denko Kk Method of manufacturing group iii nitride compound semiconductor light-emitting element, group iii nitride compound semiconductor light-emitting element, and lamp
JP2008177525A (en) 2006-12-20 2008-07-31 Showa Denko Kk Method for manufacturing group iii nitride compound semiconductor light-emitting element, the group iii nitride compound semiconductor light-emitting element and lamp
JP2008177523A (en) * 2006-12-20 2008-07-31 Showa Denko Kk Method for manufacturing group iii nitride compound semiconductor light-emitting element, the group iii nitride compound semiconductor light-emitting element and lamp
KR101071450B1 (en) * 2006-12-22 2011-10-10 쇼와 덴코 가부시키가이샤 Method for producing group iii nitride semiconductor layer, group iii nitride semiconductor light-emitting device, and lamp
JP4908381B2 (en) 2006-12-22 2012-04-04 昭和電工株式会社 Group III nitride semiconductor layer manufacturing method, group III nitride semiconductor light emitting device, and lamp
JP2008198705A (en) * 2007-02-09 2008-08-28 Showa Denko Kk Method for manufacturing group iii nitride semiconductor light-emitting device, group iii nitride semiconductor light-emitting device, and lamp
JP2008235877A (en) * 2007-02-19 2008-10-02 Showa Denko Kk Solar cell and manufacturing method therefor
JP2008226868A (en) * 2007-03-08 2008-09-25 Showa Denko Kk Group iii nitride compound semiconductor laminated structure
JP5261969B2 (en) * 2007-04-27 2013-08-14 豊田合成株式会社 Group III nitride compound semiconductor light emitting device
JP5049659B2 (en) * 2007-06-11 2012-10-17 昭和電工株式会社 Group III nitride semiconductor manufacturing method, group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp
JP2009016505A (en) * 2007-07-03 2009-01-22 Showa Denko Kk Group iii nitride compound semiconductor light emitting element
JP4714712B2 (en) * 2007-07-04 2011-06-29 昭和電工株式会社 Group III nitride semiconductor light emitting device, method for manufacturing the same, and lamp
JP2009081406A (en) * 2007-09-27 2009-04-16 Showa Denko Kk Group iii nitride semiconductor light-emitting device, method for manufacturing thereof, and lamp
JP5272390B2 (en) * 2007-11-29 2013-08-28 豊田合成株式会社 Group III nitride semiconductor manufacturing method, group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp
US20090205707A1 (en) * 2008-02-19 2009-08-20 Showa Denko K.K. Solar cell and method for producing the same
JP5556657B2 (en) * 2008-05-14 2014-07-23 豊田合成株式会社 Group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp
JP5916980B2 (en) * 2009-09-11 2016-05-11 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting diode device
EP2484816B1 (en) * 2009-09-28 2015-03-11 Tokuyama Corporation Method for production of laminate
US8704239B2 (en) * 2009-11-10 2014-04-22 Tokuyama Corporation Production method of a layered body
JP2010232700A (en) * 2010-07-20 2010-10-14 Showa Denko Kk Method of manufacturing group iii nitride semiconductor light-emitting element
JP2011082570A (en) * 2011-01-11 2011-04-21 Showa Denko Kk Method of manufacturing group iii nitride semiconductor light emitting device
DE102011114671A1 (en) * 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
DE102011114670A1 (en) * 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
JP6002508B2 (en) * 2012-09-03 2016-10-05 住友化学株式会社 Nitride semiconductor wafer
DE112014001272B4 (en) * 2013-03-14 2023-03-30 Canon Anelva Corporation Layer forming method, method of manufacturing a semiconductor light-emitting device, semiconductor light-emitting device and lighting device
TWI564410B (en) * 2014-04-25 2017-01-01 明志科技大學 Physical vapor deposition of an aluminium nitride film
JP2014241417A (en) * 2014-07-15 2014-12-25 シャープ株式会社 Aluminum-containing nitride intermediate layer manufacturing method, nitride layer manufacturing method and nitride semiconductor element manufacturing method
JP2019524982A (en) * 2016-05-26 2019-09-05 ジョルゲンソン，ロビー IIIA nitride growth system and method
CN107488828B (en) * 2016-06-12 2020-01-03 北京北方华创微电子装备有限公司 Method for forming thin film and method for forming aluminum nitride thin film

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710280A (en) 1980-06-23 1982-01-19 Futaba Corp Gan light emitting element
JPS58171568A (en) 1982-03-31 1983-10-08 Fujitsu Ltd Sputtering device
JPS6022971B2 (en) * 1982-09-10 1985-06-05 富士通株式会社 Sputtering method for metal oxide film
JPS60173829A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Growing method of compound semiconductor thin-film
JP2772637B2 (en) 1987-08-21 1998-07-02 強化土エンジニヤリング 株式会社 Injection pipe device and ground injection method using this device
JP3063289B2 (en) 1991-09-30 2000-07-12 前田建設工業株式会社 Construction method of steel pipe columns with beams
JPH08310900A (en) 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd Thin-film single crystal of nitride and its production
JPH09227297A (en) 1996-02-19 1997-09-02 Mitsubishi Cable Ind Ltd Indium-gallium-nitride single crystal and its production
JPH11160662A (en) * 1997-12-01 1999-06-18 Sharp Corp Manufacture of electro-optical device

Also Published As

Publication number Publication date
JP3994623B2 (en) 2007-10-24
DE60121768T2 (en) 2007-07-12
JP2001308010A (en) 2001-11-02
CN1425189A (en) 2003-06-18
WO2001082347A1 (en) 2001-11-01
EP1296363A1 (en) 2003-03-26
EP1296363A4 (en) 2004-11-17
TW490866B (en) 2002-06-11
KR100504161B1 (en) 2005-07-28
KR20020093922A (en) 2002-12-16
US6830949B2 (en) 2004-12-14
EP1296363B1 (en) 2006-07-26
DE60121768D1 (en) 2006-09-07
CN1189919C (en) 2005-02-16
US20030109076A1 (en) 2003-06-12

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