AU2001244643A1 - Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element - Google Patents

Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element

Info

Publication number
AU2001244643A1
AU2001244643A1 AU2001244643A AU4464301A AU2001244643A1 AU 2001244643 A1 AU2001244643 A1 AU 2001244643A1 AU 2001244643 A AU2001244643 A AU 2001244643A AU 4464301 A AU4464301 A AU 4464301A AU 2001244643 A1 AU2001244643 A1 AU 2001244643A1
Authority
AU
Australia
Prior art keywords
iii nitride
compoundsemiconductor
production method
compound semiconductor
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001244643A
Inventor
Toshio Hiramatsu
Masayoshi Koike
Seiji Nagai
Yuta Tezen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000099949A external-priority patent/JP4406999B2/en
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001244643A1 publication Critical patent/AU2001244643A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
AU2001244643A 2000-03-31 2001-03-29 Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element Abandoned AU2001244643A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-99948 2000-03-31
JP2000099948 2000-03-31
JP2000099949A JP4406999B2 (en) 2000-03-31 2000-03-31 Group III nitride compound semiconductor manufacturing method and group III nitride compound semiconductor device
JP2000-99949 2000-03-31
PCT/JP2001/002695 WO2001075952A1 (en) 2000-03-31 2001-03-29 Production method of iii nitride compound semiconductor and iii nitride compound semiconductor element

Publications (1)

Publication Number Publication Date
AU2001244643A1 true AU2001244643A1 (en) 2001-10-15

Family

ID=26589293

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001244643A Abandoned AU2001244643A1 (en) 2000-03-31 2001-03-29 Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element

Country Status (7)

Country Link
US (2) US6861305B2 (en)
EP (1) EP1280190A4 (en)
KR (2) KR100527075B1 (en)
CN (1) CN100421213C (en)
AU (1) AU2001244643A1 (en)
TW (1) TW518767B (en)
WO (1) WO2001075952A1 (en)

Families Citing this family (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
JP3556916B2 (en) * 2000-09-18 2004-08-25 三菱電線工業株式会社 Manufacturing method of semiconductor substrate
JP3988018B2 (en) * 2001-01-18 2007-10-10 ソニー株式会社 Crystal film, crystal substrate and semiconductor device
US6890785B2 (en) * 2002-02-27 2005-05-10 Sony Corporation Nitride semiconductor, semiconductor device, and manufacturing methods for the same
WO2004061909A1 (en) * 2002-12-16 2004-07-22 The Regents Of The University Of California Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
DE60331490D1 (en) 2002-05-15 2010-04-08 Panasonic Corp Light-emitting semiconductor element
JP2004273661A (en) * 2003-03-07 2004-09-30 Sumitomo Chem Co Ltd Method for manufacturing gallium nitride single crystal substrate
JP4229005B2 (en) * 2003-06-26 2009-02-25 住友電気工業株式会社 GaN substrate, method of manufacturing the same, and nitride semiconductor device
KR20050061994A (en) * 2003-12-19 2005-06-23 삼성전기주식회사 Method of lateral growth of gan using in doping
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
US20050221515A1 (en) * 2004-03-30 2005-10-06 Katsunori Yanashima Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type III-V group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
US7791061B2 (en) 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
JP4661088B2 (en) * 2004-06-01 2011-03-30 住友化学株式会社 Method for manufacturing compound semiconductor substrate having pn junction
PL1769105T3 (en) * 2004-06-11 2014-11-28 Ammono S A Bulk mono-crystalline gallium nitride and method for its preparation
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
DE102005005635A1 (en) * 2004-08-31 2006-03-02 Osram Opto Semiconductors Gmbh Radiation-emitting optoelectronic component with a quantum well structure and method for its production
KR100616631B1 (en) * 2004-11-15 2006-08-28 삼성전기주식회사 Nitride based semiconductor light emitting device and method for manufacturing the same
JP4818732B2 (en) * 2005-03-18 2011-11-16 シャープ株式会社 Method of manufacturing nitride semiconductor device
US20090179211A1 (en) * 2005-07-14 2009-07-16 Tae-Kyung Yoo Light emitting device
WO2007008047A1 (en) * 2005-07-14 2007-01-18 Epivalley Co., Ltd. Light emitting device
US20090233414A1 (en) * 2005-10-20 2009-09-17 Shah Pankaj B Method for fabricating group III-nitride high electron mobility transistors (HEMTs)
US7777250B2 (en) * 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
JP4637781B2 (en) * 2006-03-31 2011-02-23 昭和電工株式会社 GaN-based semiconductor light emitting device manufacturing method
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
JP5250856B2 (en) * 2006-06-13 2013-07-31 豊田合成株式会社 Method for manufacturing gallium nitride compound semiconductor light emitting device
US7915626B1 (en) * 2006-08-15 2011-03-29 Sandia Corporation Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films
TWI325641B (en) * 2006-09-04 2010-06-01 Huga Optotech Inc Light emitting device and methods for forming the same
KR100838755B1 (en) * 2006-11-08 2008-06-17 삼성전기주식회사 Method for forming GaN type semiconductor Light Emitting device
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
US8409972B2 (en) * 2007-04-11 2013-04-02 Cree, Inc. Light emitting diode having undoped and unintentionally doped nitride transition layer
JP5245305B2 (en) * 2007-07-06 2013-07-24 サンケン電気株式会社 Field effect semiconductor device and manufacturing method thereof
EP2171748A1 (en) * 2007-07-26 2010-04-07 S.O.I.Tec Silicon on Insulator Technologies Epitaxial methods and templates grown by the methods
US7682944B2 (en) * 2007-12-14 2010-03-23 Cree, Inc. Pendeo epitaxial structures and devices
JP2009283807A (en) * 2008-05-26 2009-12-03 Canon Inc Structure including nitride semiconductor layer, composite substrate including nitride semiconductor layer, and method for manufacturing them
WO2010065163A2 (en) * 2008-06-05 2010-06-10 Soraa, Inc. Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan
US20090309127A1 (en) * 2008-06-13 2009-12-17 Soraa, Inc. Selective area epitaxy growth method and structure
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8767787B1 (en) 2008-07-14 2014-07-01 Soraa Laser Diode, Inc. Integrated laser diodes with quality facets on GaN substrates
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8143148B1 (en) * 2008-07-14 2012-03-27 Soraa, Inc. Self-aligned multi-dielectric-layer lift off process for laser diode stripes
DE102008035784A1 (en) 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for its production
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
JP2011530194A (en) 2008-08-04 2011-12-15 ソラア インコーポレーテッド White light device using non-polarizable or semipolar gallium containing materials and phosphors
JP5180050B2 (en) * 2008-12-17 2013-04-10 スタンレー電気株式会社 Manufacturing method of semiconductor device
US20100187568A1 (en) * 2009-01-28 2010-07-29 S.O.I.Tec Silicon On Insulator Technologies, S.A. Epitaxial methods and structures for forming semiconductor materials
EP2412006A1 (en) * 2009-02-05 2012-02-01 S.O.I.Tec Silicon on Insulator Technologies Epitaxial methods and structures for forming semiconductor materials
TW201032350A (en) * 2009-02-20 2010-09-01 Univ Nat Central A manufacturing method of LED
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8178427B2 (en) * 2009-03-31 2012-05-15 Commissariat A. L'energie Atomique Epitaxial methods for reducing surface dislocation density in semiconductor materials
JP5780605B2 (en) * 2009-04-13 2015-09-16 ソラア レイザー ダイオード インク Optical element structure using GAN substrate for laser utilization
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US20100279020A1 (en) * 2009-04-29 2010-11-04 Applied Materials, Inc. METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
EP2439316A4 (en) * 2009-06-01 2014-01-29 Mitsubishi Chem Corp Nitride semiconductor crystal and method for manufacturing same
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
KR20120041237A (en) 2009-08-04 2012-04-30 갠 시스템즈 인크. Island matrixed gallium nitride microwave and power switching transistors
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US20110056429A1 (en) * 2009-08-21 2011-03-10 Soraa, Inc. Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8759203B2 (en) 2009-11-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Growing III-V compound semiconductors from trenches filled with intermediate layers
JP5946771B2 (en) 2009-12-16 2016-07-06 ナショナル セミコンダクター コーポレーションＮａｔｉｏｎａｌ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏｒｐｏｒａｔｉｏｎ Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
JP5512877B2 (en) * 2010-03-31 2014-06-04 シーエスソリューション・カンパニー・リミッテド Semiconductor template substrate, light emitting device using semiconductor template substrate, and method for manufacturing the same
KR101116904B1 (en) * 2010-03-31 2012-03-06 시스솔루션 주식회사 Method for manufacturing nitride semiconductor crystals and light emitting devices
US8791508B2 (en) 2010-04-13 2014-07-29 Gan Systems Inc. High density gallium nitride devices using island topology
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US8318563B2 (en) 2010-05-19 2012-11-27 National Semiconductor Corporation Growth of group III nitride-based structures and integration with conventional CMOS processing tools
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8372671B2 (en) 2010-06-21 2013-02-12 Micron Technology, Inc. Solid state devices with semi-polar facets and associated methods of manufacturing
US8592292B2 (en) 2010-09-02 2013-11-26 National Semiconductor Corporation Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US8597967B1 (en) 2010-11-17 2013-12-03 Soraa, Inc. Method and system for dicing substrates containing gallium and nitrogen material
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9178114B2 (en) * 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
JP5811009B2 (en) * 2012-03-30 2015-11-11 豊田合成株式会社 Group III nitride semiconductor manufacturing method and group III nitride semiconductor
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
WO2013154485A1 (en) * 2012-04-13 2013-10-17 Sun Yanting A method for manufacturing a semiconductor method device based on epitaxial growth.
US9620671B2 (en) * 2012-06-13 2017-04-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing same
JP5891390B2 (en) * 2012-10-05 2016-03-23 パナソニックＩｐマネジメント株式会社 Nitride semiconductor structure, laminated structure, and nitride semiconductor light emitting device
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US20140158976A1 (en) * 2012-12-06 2014-06-12 Sansaptak DASGUPTA Iii-n semiconductor-on-silicon structures and techniques
KR101603207B1 (en) 2013-01-29 2016-03-14 삼성전자주식회사 Manufacturing methdo of nano sturucture semiconductor light emitting device
WO2014118162A1 (en) * 2013-01-31 2014-08-07 Osram Opto Semiconductors Gmbh Semiconductor layer sequence and method for producing a semiconductor layer sequence
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
EP3050077A4 (en) * 2013-09-27 2017-04-26 Intel Corporation Integration of iii-v devices on si wafers
CN104576865A (en) * 2013-10-25 2015-04-29 广东德力光电有限公司 Stress-released GaN-based LED structure and manufacturing method
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
CN104638068B (en) * 2013-11-07 2018-08-24 上海蓝光科技有限公司 A kind of substrat structure and preparation method thereof being used for the growth of III-V group-III nitride
US9640422B2 (en) * 2014-01-23 2017-05-02 Intel Corporation III-N devices in Si trenches
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
DE112016000120T5 (en) * 2015-04-17 2017-07-06 Fuji Electric Co., Ltd. Semiconductor manufacturing process and SiC substrate
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
TWI569464B (en) * 2015-10-22 2017-02-01 隆達電子股份有限公司 Compound semiconductor thin film structure
US9899564B2 (en) * 2016-03-23 2018-02-20 Panasonic Intellectual Property Management Co., Ltd. Group III nitride semiconductor and method for producing same
CN107170666A (en) * 2017-05-25 2017-09-15 东南大学 A kind of nonpolar III group-III nitride epitaxial film
CN111066158B (en) * 2017-09-07 2022-05-03 苏州晶湛半导体有限公司 Method for roughening surface of light-emitting device and light-emitting device
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10818778B2 (en) * 2017-11-27 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Heterogeneous semiconductor device substrates with high quality epitaxy
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
CN110230102B (en) * 2018-03-05 2022-01-04 中国科学院苏州纳米技术与纳米仿生研究所 Very low dislocation density gallium nitride single crystal and its flux method growth method
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US20230115980A1 (en) * 2021-10-11 2023-04-13 Applied Materials, Inc. Masking layers in led structures

Family Cites Families (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143944B2 (en) 1972-03-15 1976-11-25
JPS49149679U (en) 1973-04-27 1974-12-25
JPS51137393A (en) 1975-05-22 1976-11-27 Mitsubishi Electric Corp Manufacturing method for semiconductor light emitting device
JPS5534646A (en) 1978-08-30 1980-03-11 Sumitomo Metal Ind Ltd Heating method for furnace body in blowing-in of shaft furnace
JPS57115849A (en) 1981-01-12 1982-07-19 Fujitsu Ltd Manufacture of substrate for semiconductor device
JPS5833882A (en) 1981-08-21 1983-02-28 Mitsubishi Electric Corp Manufacture of light emitting diode
JPH01316459A (en) 1988-06-15 1989-12-21 Murata Mfg Co Ltd In-line sputtering device and method
JP2768988B2 (en) 1989-08-17 1998-06-25 三菱電機株式会社 End face coating method
JPH06105797B2 (en) 1989-10-19 1994-12-21 昭和電工株式会社 Semiconductor substrate and manufacturing method thereof
JP2623464B2 (en) 1990-04-27 1997-06-25 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
JPH0484418A (en) 1990-07-27 1992-03-17 Nec Corp Method of heteroepitaxial development of iii-v group compound semiconductor for different types of substrates
JPH04303920A (en) 1991-03-29 1992-10-27 Nec Corp Insulating film/iii-v compound semiconductor stacked structure on group iv substrate
JP2954743B2 (en) 1991-05-30 1999-09-27 京セラ株式会社 Method for manufacturing semiconductor light emitting device
JPH05110206A (en) 1991-10-16 1993-04-30 Kubota Corp Method and apparatus for producing light emitting semiconductor element
JP3352712B2 (en) 1991-12-18 2002-12-03 浩 天野 Gallium nitride based semiconductor device and method of manufacturing the same
JPH05283744A (en) 1991-12-20 1993-10-29 Toshiba Corp Semiconductor element
JP2751963B2 (en) 1992-06-10 1998-05-18 日亜化学工業株式会社 Method for growing indium gallium nitride semiconductor
JPH07249830A (en) 1994-03-10 1995-09-26 Hitachi Ltd Manufacture of semiconductor light-emitting element
JPH07273367A (en) 1994-04-01 1995-10-20 Mitsubishi Cable Ind Ltd Manufacture of semiconductor substrate and light-emitting device
JP3974667B2 (en) 1994-08-22 2007-09-12 ローム株式会社 Manufacturing method of semiconductor light emitting device
JPH0864791A (en) 1994-08-23 1996-03-08 Matsushita Electric Ind Co Ltd Epitaxial growth method
JP3326545B2 (en) 1994-09-30 2002-09-24 ローム株式会社 Semiconductor light emitting device
JPH08222812A (en) 1995-02-17 1996-08-30 Matsushita Electric Ind Co Ltd Method for crystal growth of gallium nitride based compound semiconductor
JPH08274411A (en) 1995-03-31 1996-10-18 Hitachi Ltd Semiconductor laser
WO1997011518A1 (en) 1995-09-18 1997-03-27 Hitachi, Ltd. Semiconductor material, method of producing the semiconductor material, and semiconductor device
JP3396356B2 (en) 1995-12-11 2003-04-14 三菱電機株式会社 Semiconductor device and method of manufacturing the same
US5798536A (en) 1996-01-25 1998-08-25 Rohm Co., Ltd. Light-emitting semiconductor device and method for manufacturing the same
JP3139445B2 (en) * 1997-03-13 2001-02-26 日本電気株式会社 GaN-based semiconductor growth method and GaN-based semiconductor film
KR19980079320A (en) * 1997-03-24 1998-11-25 기다오까다까시 Selective growth method of high quality muene layer, semiconductor device made on high quality muene layer growth substrate and high quality muene layer growth substrate
EP0874405A3 (en) * 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
US6153010A (en) 1997-04-11 2000-11-28 Nichia Chemical Industries Ltd. Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
JPH11191657A (en) 1997-04-11 1999-07-13 Nichia Chem Ind Ltd Growing method of nitride semiconductor and nitride semiconductor device
DE19715572A1 (en) 1997-04-15 1998-10-22 Telefunken Microelectron Selective epitaxy of III-V nitride semiconductor layers
JPH10321954A (en) 1997-05-15 1998-12-04 Fuji Electric Co Ltd Group iii nitride semiconductor element and manufacture thereof
JP3551751B2 (en) 1997-05-16 2004-08-11 日亜化学工業株式会社 Method for growing nitride semiconductor
EP1007768A4 (en) 1997-07-03 2003-07-16 Cbl Technologies Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature
JP3189877B2 (en) 1997-07-11 2001-07-16 日本電気株式会社 Crystal growth method of low dislocation gallium nitride
JPH1143398A (en) 1997-07-22 1999-02-16 Mitsubishi Cable Ind Ltd Substrate for growing gallium nitride-based crystal and use thereof
JP3930161B2 (en) 1997-08-29 2007-06-13 株式会社東芝 Nitride-based semiconductor device, light-emitting device, and manufacturing method thereof
JPH11135770A (en) 1997-09-01 1999-05-21 Sumitomo Chem Co Ltd Iii-v compd. semiconductor, manufacture thereof and semiconductor element
JPH11145519A (en) 1997-09-02 1999-05-28 Toshiba Corp Semiconductor light-emitting element, semiconductor light-emitting device, and image-display device
JP3491538B2 (en) 1997-10-09 2004-01-26 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
JP3925753B2 (en) * 1997-10-24 2007-06-06 ソニー株式会社 Semiconductor device, manufacturing method thereof, and semiconductor light emitting device
JPH11135832A (en) 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd Gallium nitride group compound semiconductor and manufacture therefor
JP3036495B2 (en) 1997-11-07 2000-04-24 豊田合成株式会社 Method for manufacturing gallium nitride-based compound semiconductor
JP3456413B2 (en) 1997-11-26 2003-10-14 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
JP3620269B2 (en) 1998-02-27 2005-02-16 豊田合成株式会社 GaN-based semiconductor device manufacturing method
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
CN1143363C (en) * 1998-02-27 2004-03-24 北卡罗莱纳州立大学 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
US6608327B1 (en) * 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
JP3839580B2 (en) 1998-03-09 2006-11-01 株式会社リコー Manufacturing method of semiconductor substrate
JPH11274082A (en) 1998-03-24 1999-10-08 Fuji Electric Co Ltd Group iii nitride semiconductor and fabrication thereof, and group iii nitride semiconductor device
US6500257B1 (en) 1998-04-17 2002-12-31 Agilent Technologies, Inc. Epitaxial material grown laterally within a trench and method for producing same
JP3436128B2 (en) 1998-04-28 2003-08-11 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
JP4083866B2 (en) * 1998-04-28 2008-04-30 シャープ株式会社 Semiconductor laser element
JPH11330546A (en) 1998-05-12 1999-11-30 Fuji Electric Co Ltd Iii nitride semiconductor material and its manufacture
JP4390090B2 (en) 1998-05-18 2009-12-24 シャープ株式会社 GaN crystal film manufacturing method
JP3460581B2 (en) 1998-05-28 2003-10-27 日亜化学工業株式会社 Method for growing nitride semiconductor and nitride semiconductor device
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6606335B1 (en) 1998-07-14 2003-08-12 Fujitsu Limited Semiconductor laser, semiconductor device, and their manufacture methods
US6319742B1 (en) * 1998-07-29 2001-11-20 Sanyo Electric Co., Ltd. Method of forming nitride based semiconductor layer
JP3316479B2 (en) 1998-07-29 2002-08-19 三洋電機株式会社 Semiconductor device, semiconductor light emitting device, and method of manufacturing semiconductor device
JP3987660B2 (en) 1998-07-31 2007-10-10 シャープ株式会社 Nitride semiconductor structure, manufacturing method thereof, and light emitting device
JP2000044121A (en) 1998-08-03 2000-02-15 Murata Mach Ltd Sliver guide creel for spinning machine
JP3201475B2 (en) 1998-09-14 2001-08-20 松下電器産業株式会社 Semiconductor device and method of manufacturing the same
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
JP3592553B2 (en) * 1998-10-15 2004-11-24 株式会社東芝 Gallium nitride based semiconductor device
JP2000150959A (en) 1998-11-18 2000-05-30 Hitachi Ltd Gallium nitride compound semiconductor light emitting element
JP4032538B2 (en) * 1998-11-26 2008-01-16 ソニー株式会社 Semiconductor thin film and semiconductor device manufacturing method
JP2000174393A (en) 1998-12-04 2000-06-23 Fuji Electric Co Ltd Group iii nitride semiconductor, its manufacture and group iii nitride semiconductor device
JP4304750B2 (en) 1998-12-08 2009-07-29 日亜化学工業株式会社 Nitride semiconductor growth method and nitride semiconductor device
JP3659050B2 (en) 1998-12-21 2005-06-15 日亜化学工業株式会社 Nitride semiconductor growth method and nitride semiconductor device
JP2000261106A (en) 1999-01-07 2000-09-22 Matsushita Electric Ind Co Ltd Semiconductor light emitting element, its manufacture and optical disk device
JP3594826B2 (en) 1999-02-09 2004-12-02 パイオニア株式会社 Nitride semiconductor light emitting device and method of manufacturing the same
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
WO2000055893A1 (en) 1999-03-17 2000-09-21 Mitsubishi Cable Industries, Ltd. Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
JP4288743B2 (en) 1999-03-24 2009-07-01 日亜化学工業株式会社 Nitride semiconductor growth method
JP4231189B2 (en) 1999-04-14 2009-02-25 パナソニック株式会社 Method for producing group III nitride compound semiconductor substrate
TW464953B (en) 1999-04-14 2001-11-21 Matsushita Electronics Corp Method of manufacturing III nitride base compound semiconductor substrate
JP2001044121A (en) 1999-06-07 2001-02-16 Agilent Technol Inc Epitaxial layer structure and manufacture thereof
JP3786544B2 (en) 1999-06-10 2006-06-14 パイオニア株式会社 Nitride semiconductor device manufacturing method and device manufactured by the method
JP3791246B2 (en) 1999-06-15 2006-06-28 日亜化学工業株式会社 Nitride semiconductor growth method, nitride semiconductor device manufacturing method using the same, and nitride semiconductor laser device manufacturing method
JP2000357820A (en) 1999-06-15 2000-12-26 Pioneer Electronic Corp Gallium nitride semiconductor light emitting element and its manufacture
JP4005275B2 (en) 1999-08-19 2007-11-07 日亜化学工業株式会社 Nitride semiconductor device
JP4274504B2 (en) 1999-09-20 2009-06-10 キヤノン株式会社 Semiconductor thin film structure
JP2001111174A (en) 1999-10-06 2001-04-20 Fuji Photo Film Co Ltd Substrate for semiconductor device and method of fabrication thereof and semiconductor device using that substrate
JP4055304B2 (en) 1999-10-12 2008-03-05 豊田合成株式会社 Method for producing gallium nitride compound semiconductor
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
JP2001122693A (en) 1999-10-22 2001-05-08 Nec Corp Ground substrate for crystal growth and method of producing substrate using the same
EP1104031B1 (en) * 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
JP3518455B2 (en) 1999-12-15 2004-04-12 日亜化学工業株式会社 Method for manufacturing nitride semiconductor substrate
US6355497B1 (en) 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth
JP3906654B2 (en) * 2000-07-18 2007-04-18 ソニー株式会社 Semiconductor light emitting device and semiconductor light emitting device
JP3988018B2 (en) 2001-01-18 2007-10-10 ソニー株式会社 Crystal film, crystal substrate and semiconductor device

Also Published As

Publication number Publication date
EP1280190A1 (en) 2003-01-29
WO2001075952A1 (en) 2001-10-11
US20050093099A1 (en) 2005-05-05
TW518767B (en) 2003-01-21
KR100531733B1 (en) 2005-11-28
KR20050085925A (en) 2005-08-29
US6861305B2 (en) 2005-03-01
US20030119239A1 (en) 2003-06-26
US7491984B2 (en) 2009-02-17
KR100527075B1 (en) 2005-11-08
CN1633700A (en) 2005-06-29
CN100421213C (en) 2008-09-24
KR20020087458A (en) 2002-11-22
EP1280190A4 (en) 2009-09-02

Similar Documents

Publication Publication Date Title
AU2001244643A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001241108A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001236076A1 (en) Production method of iii nitride compound semiconductor substrate and semiconductor device
AU2001232341A1 (en) Iii nitride compound semiconductor element and electrode forming method
AU2001248803A1 (en) Method of manufacturing group-iii nitride compound semiconductor device
AU2001234169A1 (en) Group iii nitride compound semiconductor and method for manufacturing the same
AU2001247389A1 (en) Iii-v nitride substrate boule and method of making and using the same
AU2637801A (en) Methods of forming semiconductor structures
AU2002306289A1 (en) Method of manufacturing silicon
SG91351A1 (en) Group iii-v compound semiconductor and method of producing the same
AU2001273116A1 (en) Semiconductor device and method of formation
AU2001277779A1 (en) Semiconductor device and method of its manufacture
EP1249904A3 (en) Group III nitride compound semiconductor laser and manufacturing method thereof
AU2002354108A1 (en) Method of manufacturing semiconductor chip
AU2002213012A1 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
AU2002228766A1 (en) Semiconductor device and method of making same
AU2003257718A1 (en) Nitride semiconductor and fabrication method thereof
AU2002229106A1 (en) Semiconductor tiling structure and method of formation
AU2002348933A1 (en) Heterojunction semiconductor device and method of manufacturing such device
AU2001263382A1 (en) Semiconductor component and method of manufacturing
AU2002221041A1 (en) Semiconductor package and its manufacturing method
AU2001228168A1 (en) Method of manufacturing power silicon transistor
AU2001261345A1 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
AU2002328641A1 (en) Nitride semiconductor element and production method for nitride semiconductor element
AU2002238984A1 (en) Production method of iii nitride compound semiconductor, and iii nitride compound semiconductor element based on it