AU2001261345A1 - Method of manufacturing a semiconductor component and semiconductor component thereof - Google Patents
Method of manufacturing a semiconductor component and semiconductor component thereofInfo
- Publication number
- AU2001261345A1 AU2001261345A1 AU2001261345A AU6134501A AU2001261345A1 AU 2001261345 A1 AU2001261345 A1 AU 2001261345A1 AU 2001261345 A AU2001261345 A AU 2001261345A AU 6134501 A AU6134501 A AU 6134501A AU 2001261345 A1 AU2001261345 A1 AU 2001261345A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor component
- manufacturing
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66924—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09592349 | 2000-06-12 | ||
| US09/592,349 US6821829B1 (en) | 2000-06-12 | 2000-06-12 | Method of manufacturing a semiconductor component and semiconductor component thereof |
| PCT/US2001/015049 WO2001097274A2 (en) | 2000-06-12 | 2001-05-10 | Heterostructure field effect transistor and method of manufacturing it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001261345A1 true AU2001261345A1 (en) | 2001-12-24 |
Family
ID=24370293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001261345A Abandoned AU2001261345A1 (en) | 2000-06-12 | 2001-05-10 | Method of manufacturing a semiconductor component and semiconductor component thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6821829B1 (en) |
| JP (1) | JP2004503937A (en) |
| CN (1) | CN1205659C (en) |
| AU (1) | AU2001261345A1 (en) |
| TW (1) | TW522477B (en) |
| WO (1) | WO2001097274A2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7504677B2 (en) * | 2005-03-28 | 2009-03-17 | Freescale Semiconductor, Inc. | Multi-gate enhancement mode RF switch and bias arrangement |
| US7345545B2 (en) * | 2005-03-28 | 2008-03-18 | Freescale Semiconductor, Inc. | Enhancement mode transceiver and switched gain amplifier integrated circuit |
| JP5249521B2 (en) * | 2007-03-30 | 2013-07-31 | 本田技研工業株式会社 | Manufacturing method of semiconductor device |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695531B2 (en) | 1985-04-08 | 1994-11-24 | 日本電信電話株式会社 | Field effect transistor |
| DE3682119D1 (en) | 1985-06-21 | 1991-11-28 | Honeywell Inc | COMPLEMENTARY IC STRUCTURE WITH HIGH SLOPE. |
| JPS62268165A (en) | 1986-05-15 | 1987-11-20 | Nec Corp | Field effect transistor |
| JP2680821B2 (en) * | 1987-11-09 | 1997-11-19 | 日本電気株式会社 | Heterostructure field effect transistor |
| US5124762A (en) | 1990-12-31 | 1992-06-23 | Honeywell Inc. | Gaas heterostructure metal-insulator-semiconductor integrated circuit technology |
| JPH0521468A (en) | 1991-07-17 | 1993-01-29 | Sumitomo Electric Ind Ltd | Manufacture of field-effect transistor |
| JPH06267991A (en) | 1993-03-12 | 1994-09-22 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPH06283554A (en) * | 1993-03-30 | 1994-10-07 | Hitachi Cable Ltd | Compound semiconductor epitaxial wafer |
| JPH0722614A (en) * | 1993-07-06 | 1995-01-24 | Hitachi Cable Ltd | Compound semiconductor epitaxial wafer |
| US5455183A (en) | 1994-01-03 | 1995-10-03 | Honeywell Inc. | Method for fabricating a FET having a dielectrically isolated gate connect |
| US5479033A (en) | 1994-05-27 | 1995-12-26 | Sandia Corporation | Complementary junction heterostructure field-effect transistor |
| US5512518A (en) * | 1994-06-06 | 1996-04-30 | Motorola, Inc. | Method of manufacture of multilayer dielectric on a III-V substrate |
| JPH08162479A (en) * | 1994-12-08 | 1996-06-21 | Hitachi Ltd | Manufacture of field-effect transistor and field-effect transistor |
| US5514891A (en) | 1995-06-02 | 1996-05-07 | Motorola | N-type HIGFET and method |
| US5614739A (en) | 1995-06-02 | 1997-03-25 | Motorola | HIGFET and method |
| US5895929A (en) * | 1996-04-22 | 1999-04-20 | Motorola, Inc. | Low subthreshold leakage current HFET |
| JP3601649B2 (en) | 1996-12-25 | 2004-12-15 | 株式会社村田製作所 | Field effect transistor |
| US5937285A (en) * | 1997-05-23 | 1999-08-10 | Motorola, Inc. | Method of fabricating submicron FETs with low temperature group III-V material |
| JPH1154527A (en) * | 1997-07-30 | 1999-02-26 | Fujitsu Ltd | Field effect transistor and its manufacture |
-
2000
- 2000-06-12 US US09/592,349 patent/US6821829B1/en not_active Expired - Lifetime
-
2001
- 2001-05-10 WO PCT/US2001/015049 patent/WO2001097274A2/en active Application Filing
- 2001-05-10 JP JP2002511379A patent/JP2004503937A/en active Pending
- 2001-05-10 AU AU2001261345A patent/AU2001261345A1/en not_active Abandoned
- 2001-05-10 CN CNB018110304A patent/CN1205659C/en not_active Expired - Lifetime
- 2001-05-23 TW TW090112325A patent/TW522477B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW522477B (en) | 2003-03-01 |
| WO2001097274A3 (en) | 2002-04-11 |
| CN1436367A (en) | 2003-08-13 |
| CN1205659C (en) | 2005-06-08 |
| US6821829B1 (en) | 2004-11-23 |
| WO2001097274A2 (en) | 2001-12-20 |
| JP2004503937A (en) | 2004-02-05 |
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