AU2002217545A1 - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- AU2002217545A1 AU2002217545A1 AU2002217545A AU2002217545A AU2002217545A1 AU 2002217545 A1 AU2002217545 A1 AU 2002217545A1 AU 2002217545 A AU2002217545 A AU 2002217545A AU 2002217545 A AU2002217545 A AU 2002217545A AU 2002217545 A1 AU2002217545 A1 AU 2002217545A1
- Authority
- AU
- Australia
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000402834 | 2000-12-28 | ||
JP2000-402834 | 2000-12-28 | ||
JP2001-94245 | 2001-03-28 | ||
JP2001094245A JP4713752B2 (en) | 2000-12-28 | 2001-03-28 | Semiconductor device and manufacturing method thereof |
PCT/JP2001/011597 WO2002054473A1 (en) | 2000-12-28 | 2001-12-27 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2002217545A1 true AU2002217545A1 (en) | 2003-01-23 |
AU2002217545B2 AU2002217545B2 (en) | 2005-03-17 |
Family
ID=26607204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002217545A Ceased AU2002217545B2 (en) | 2000-12-28 | 2001-12-27 | Semiconductor device and its manufacturing method |
Country Status (10)
Country | Link |
---|---|
US (2) | US6975018B2 (en) |
EP (1) | EP1347506A4 (en) |
JP (1) | JP4713752B2 (en) |
KR (2) | KR100797432B1 (en) |
CN (1) | CN100352016C (en) |
AU (1) | AU2002217545B2 (en) |
CA (1) | CA2433565C (en) |
IL (2) | IL156619A0 (en) |
TW (2) | TWI249182B (en) |
WO (1) | WO2002054473A1 (en) |
Families Citing this family (51)
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WO2000074127A1 (en) * | 1999-05-26 | 2000-12-07 | Tokyo Electron Limited | Plasma process device |
JP4713752B2 (en) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | Semiconductor device and manufacturing method thereof |
JP4048048B2 (en) * | 2001-12-18 | 2008-02-13 | 東京エレクトロン株式会社 | Substrate processing method |
US7517751B2 (en) | 2001-12-18 | 2009-04-14 | Tokyo Electron Limited | Substrate treating method |
JP4164324B2 (en) * | 2002-09-19 | 2008-10-15 | スパンション エルエルシー | Manufacturing method of semiconductor device |
JP4320167B2 (en) | 2002-12-12 | 2009-08-26 | 忠弘 大見 | Semiconductor device and method for manufacturing silicon oxynitride film |
JP2004265916A (en) * | 2003-02-06 | 2004-09-24 | Tokyo Electron Ltd | Plasma oxidation treatment method of substrate |
WO2004070816A1 (en) | 2003-02-06 | 2004-08-19 | Tokyo Electron Limited | Plasma processing method, semiconductor substrate and plasma processing system |
JP2004319907A (en) * | 2003-04-18 | 2004-11-11 | Tadahiro Omi | Method and system for manufacturing semiconductor device |
JP5014566B2 (en) * | 2003-06-04 | 2012-08-29 | 国立大学法人東北大学 | Semiconductor device and manufacturing method thereof |
JP2005005620A (en) * | 2003-06-13 | 2005-01-06 | Toyota Industries Corp | Switched capacitor circuit and its semiconductor integrated circuit |
JP4723797B2 (en) * | 2003-06-13 | 2011-07-13 | 財団法人国際科学振興財団 | CMOS transistor |
US6992370B1 (en) * | 2003-09-04 | 2006-01-31 | Advanced Micro Devices, Inc. | Memory cell structure having nitride layer with reduced charge loss and method for fabricating same |
KR100810777B1 (en) * | 2003-12-18 | 2008-03-06 | 동경 엘렉트론 주식회사 | Method for forming film and computer readable recording medium |
US7466590B2 (en) * | 2004-02-06 | 2008-12-16 | Sandisk Corporation | Self-boosting method for flash memory cells |
US7161833B2 (en) * | 2004-02-06 | 2007-01-09 | Sandisk Corporation | Self-boosting system for flash memory cells |
JP2005285942A (en) * | 2004-03-29 | 2005-10-13 | Tadahiro Omi | Method and device for plasma treatment |
US7091089B2 (en) * | 2004-06-25 | 2006-08-15 | Freescale Semiconductor, Inc. | Method of forming a nanocluster charge storage device |
CN101027941A (en) * | 2004-09-24 | 2007-08-29 | 大见忠弘 | Organic el light emitting element, manufacturing method thereof and display |
US7361543B2 (en) | 2004-11-12 | 2008-04-22 | Freescale Semiconductor, Inc. | Method of forming a nanocluster charge storage device |
KR100673205B1 (en) * | 2004-11-24 | 2007-01-22 | 주식회사 하이닉스반도체 | Method of manufacturing in flash memory device |
US20060270066A1 (en) * | 2005-04-25 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
JP4734019B2 (en) * | 2005-04-26 | 2011-07-27 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
TWI408734B (en) * | 2005-04-28 | 2013-09-11 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing the same |
US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
US7364954B2 (en) | 2005-04-28 | 2008-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2006310601A (en) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | Semiconductor apparatus and its manufacturing method |
US7785947B2 (en) | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
US7410839B2 (en) | 2005-04-28 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
TWI450379B (en) * | 2005-06-20 | 2014-08-21 | Univ Tohoku | Interlayer insulation film and wiring structure, and method of producing the same |
US7820495B2 (en) * | 2005-06-30 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8198195B2 (en) | 2005-09-26 | 2012-06-12 | Tadahiro Ohmi | Plasma processing method and plasma processing apparatus |
JP5222478B2 (en) * | 2006-02-10 | 2013-06-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing nonvolatile semiconductor memory device |
EP1818989A3 (en) | 2006-02-10 | 2010-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device and manufacturing method thereof |
US7428165B2 (en) | 2006-03-30 | 2008-09-23 | Sandisk Corporation | Self-boosting method with suppression of high lateral electric fields |
US7511995B2 (en) * | 2006-03-30 | 2009-03-31 | Sandisk Corporation | Self-boosting system with suppression of high lateral electric fields |
JP5235333B2 (en) * | 2006-05-26 | 2013-07-10 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
WO2007138937A1 (en) | 2006-05-26 | 2007-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2007324185A (en) * | 2006-05-30 | 2007-12-13 | Canon Inc | Plasma processing method |
US8895388B2 (en) * | 2006-07-21 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment |
JP5010222B2 (en) * | 2006-09-21 | 2012-08-29 | 株式会社東芝 | Nonvolatile semiconductor memory device |
US7972973B2 (en) | 2006-09-29 | 2011-07-05 | Tokyo Electron Limited | Method for forming silicon oxide film, plasma processing apparatus and storage medium |
US8581260B2 (en) * | 2007-02-22 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a memory |
CN102033361B (en) * | 2008-03-21 | 2013-03-06 | 北京京东方光电科技有限公司 | Manufacture method of liquid crystal orientation layer |
WO2010064549A1 (en) | 2008-12-04 | 2010-06-10 | 三菱電機株式会社 | Method for manufacturing thin-film photoelectric conversion device |
KR101096909B1 (en) | 2009-12-04 | 2011-12-22 | 주식회사 하이닉스반도체 | Transistor of semiconductor device and method of fabricating the same |
CN103451620A (en) * | 2013-09-02 | 2013-12-18 | 上海华力微电子有限公司 | Surface treatment method of metal silicide barrier layer |
JP6425146B2 (en) * | 2014-06-27 | 2018-11-21 | インテル・コーポレーション | Multigate transistor with variable sized fins |
CN108807165B (en) * | 2018-06-14 | 2021-04-13 | 上海华力集成电路制造有限公司 | Method for producing oxide layer |
US10666353B1 (en) * | 2018-11-20 | 2020-05-26 | Juniper Networks, Inc. | Normal incidence photodetector with self-test functionality |
DE112018008193T5 (en) * | 2018-12-05 | 2021-10-14 | Mitsubishi Electric Corporation | SEMICONDUCTOR UNIT AND METHOD OF MANUFACTURING A SEMICONDUCTOR UNIT |
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US4089992A (en) * | 1965-10-11 | 1978-05-16 | International Business Machines Corporation | Method for depositing continuous pinhole free silicon nitride films and products produced thereby |
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US3765935A (en) * | 1971-08-10 | 1973-10-16 | Bell Telephone Labor Inc | Radiation resistant coatings for semiconductor devices |
DE3280026D1 (en) * | 1981-05-29 | 1989-12-21 | Kanegafuchi Chemical Ind | Process for preparing amorphous silicon semiconductor |
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EP0115204B1 (en) * | 1982-12-27 | 1989-03-29 | Mitsubishi Kasei Polytec Company | Epitaxial wafer for use in the production of an infrared led |
EP0211634B1 (en) * | 1985-08-02 | 1994-03-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for manufacturing semiconductor devices |
US4895734A (en) * | 1987-03-31 | 1990-01-23 | Hitachi Chemical Company, Ltd. | Process for forming insulating film used in thin film electroluminescent device |
FR2614317B1 (en) * | 1987-04-22 | 1989-07-13 | Air Liquide | PROCESS FOR PROTECTING POLYMERIC SUBSTRATE BY PLASMA DEPOSITION OF COMPOUNDS OF THE SILICON OXYNITRIDE TYPE AND DEVICE FOR IMPLEMENTING SAME. |
US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US5164040A (en) * | 1989-08-21 | 1992-11-17 | Martin Marietta Energy Systems, Inc. | Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
JPH0740569B2 (en) * | 1990-02-27 | 1995-05-01 | エイ・ティ・アンド・ティ・コーポレーション | ECR plasma deposition method |
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
JP2880322B2 (en) * | 1991-05-24 | 1999-04-05 | キヤノン株式会社 | Method of forming deposited film |
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US5340754A (en) * | 1992-09-02 | 1994-08-23 | Motorla, Inc. | Method for forming a transistor having a dynamic connection between a substrate and a channel region |
JPH06120152A (en) * | 1992-10-06 | 1994-04-28 | Nippondenso Co Ltd | Manufacture of hydrogen-doped amorphous semiconductor film |
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JP3146113B2 (en) * | 1994-08-30 | 2001-03-12 | シャープ株式会社 | Method of manufacturing thin film transistor and liquid crystal display device |
US5656834A (en) * | 1994-09-19 | 1997-08-12 | Philips Electronics North America Corporation | IC standard cell designed with embedded capacitors |
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US6106678A (en) * | 1996-03-29 | 2000-08-22 | Lam Research Corporation | Method of high density plasma CVD gap-filling |
US5702869A (en) * | 1996-06-07 | 1997-12-30 | Vanguard International Semiconductor Corporation | Soft ashing method for removing fluorinated photoresists layers from semiconductor substrates |
JP3220645B2 (en) | 1996-09-06 | 2001-10-22 | 富士通株式会社 | Method for manufacturing semiconductor device |
JPH10275913A (en) * | 1997-03-28 | 1998-10-13 | Sanyo Electric Co Ltd | Semiconductor device, its manufacture, and manufacture of thin film transistor |
JP3222404B2 (en) * | 1997-06-20 | 2001-10-29 | 科学技術振興事業団 | Method and apparatus for forming insulating film on semiconductor substrate surface |
JP2000022185A (en) * | 1998-07-03 | 2000-01-21 | Sharp Corp | Solar cell and its manufacture |
US20010052323A1 (en) * | 1999-02-17 | 2001-12-20 | Ellie Yieh | Method and apparatus for forming material layers from atomic gasses |
JP4119029B2 (en) * | 1999-03-10 | 2008-07-16 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
KR100745495B1 (en) * | 1999-03-10 | 2007-08-03 | 동경 엘렉트론 주식회사 | Semiconductor fabrication method and semiconductor fabrication equipment |
US6461909B1 (en) * | 2000-08-30 | 2002-10-08 | Micron Technology, Inc. | Process for fabricating RuSixOy-containing adhesion layers |
JP4713752B2 (en) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | Semiconductor device and manufacturing method thereof |
US6586792B2 (en) * | 2001-03-15 | 2003-07-01 | Micron Technology, Inc. | Structures, methods, and systems for ferroelectric memory transistors |
-
2001
- 2001-03-28 JP JP2001094245A patent/JP4713752B2/en not_active Expired - Fee Related
- 2001-12-27 KR KR1020067011455A patent/KR100797432B1/en not_active IP Right Cessation
- 2001-12-27 CA CA002433565A patent/CA2433565C/en not_active Expired - Fee Related
- 2001-12-27 TW TW092125032A patent/TWI249182B/en not_active IP Right Cessation
- 2001-12-27 CN CNB018215378A patent/CN100352016C/en not_active Expired - Fee Related
- 2001-12-27 IL IL15661901A patent/IL156619A0/en not_active IP Right Cessation
- 2001-12-27 KR KR1020037008861A patent/KR100662310B1/en not_active IP Right Cessation
- 2001-12-27 TW TW090132522A patent/TW587273B/en not_active IP Right Cessation
- 2001-12-27 US US10/452,000 patent/US6975018B2/en not_active Expired - Lifetime
- 2001-12-27 AU AU2002217545A patent/AU2002217545B2/en not_active Ceased
- 2001-12-27 EP EP01272543A patent/EP1347506A4/en not_active Withdrawn
- 2001-12-27 WO PCT/JP2001/011597 patent/WO2002054473A1/en active Application Filing
-
2005
- 2005-08-01 US US11/193,390 patent/US20050272266A1/en not_active Abandoned
-
2007
- 2007-01-30 IL IL181060A patent/IL181060A/en not_active IP Right Cessation
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