AU2002213012A1 - Method of manufacturing a semiconductor component and semiconductor component thereof - Google Patents

Method of manufacturing a semiconductor component and semiconductor component thereof

Info

Publication number
AU2002213012A1
AU2002213012A1 AU2002213012A AU1301202A AU2002213012A1 AU 2002213012 A1 AU2002213012 A1 AU 2002213012A1 AU 2002213012 A AU2002213012 A AU 2002213012A AU 1301202 A AU1301202 A AU 1301202A AU 2002213012 A1 AU2002213012 A1 AU 2002213012A1
Authority
AU
Australia
Prior art keywords
semiconductor component
manufacturing
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002213012A
Inventor
Jonathan K. Abrokwah
Haldane S. Henry
Darrell G. Hill
Mariam G. Sadaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002213012A1 publication Critical patent/AU2002213012A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31616—Deposition of Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AU2002213012A 2000-10-05 2001-10-04 Method of manufacturing a semiconductor component and semiconductor component thereof Abandoned AU2002213012A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/679,861 2000-10-05
US09/679,861 US6465297B1 (en) 2000-10-05 2000-10-05 Method of manufacturing a semiconductor component having a capacitor
PCT/US2001/031035 WO2002029865A2 (en) 2000-10-05 2001-10-04 Method of manufacturing a semiconductor component and semiconductor component thereof

Publications (1)

Publication Number Publication Date
AU2002213012A1 true AU2002213012A1 (en) 2002-04-15

Family

ID=24728675

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002213012A Abandoned AU2002213012A1 (en) 2000-10-05 2001-10-04 Method of manufacturing a semiconductor component and semiconductor component thereof

Country Status (6)

Country Link
US (1) US6465297B1 (en)
JP (1) JP4216588B2 (en)
KR (1) KR100890716B1 (en)
CN (1) CN1251302C (en)
AU (1) AU2002213012A1 (en)
WO (1) WO2002029865A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622322B2 (en) * 2001-03-23 2009-11-24 Cornell Research Foundation, Inc. Method of forming an AlN coated heterojunction field effect transistor
US6693017B1 (en) * 2003-04-04 2004-02-17 Infineon Technologies Ag MIMcap top plate pull-back
US6847273B2 (en) * 2003-04-25 2005-01-25 Cyntec Co., Ltd. Miniaturized multi-layer coplanar wave guide low pass filter
KR100549951B1 (en) * 2004-01-09 2006-02-07 삼성전자주식회사 method for forming capacitor used to etching stopper layer for use in semiconductor memory
WO2008010028A1 (en) * 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
KR100968800B1 (en) * 2006-07-12 2010-07-08 가부시끼가이샤 도시바 Semiconductor device for high frequency
CN102148188B (en) * 2010-02-09 2016-02-03 中芯国际集成电路制造(上海)有限公司 Semiconductor device and preparation method thereof
CN102148185B (en) * 2010-02-09 2013-05-01 中芯国际集成电路制造(上海)有限公司 Method for forming interconnection structure
CN102148186B (en) * 2010-02-09 2013-05-01 中芯国际集成电路制造(上海)有限公司 Method for manufacturing semiconductor device
US8962443B2 (en) * 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
CN106298655A (en) * 2015-05-11 2017-01-04 北大方正集团有限公司 The preparation method of metal-oxide power device and power device
US10658455B2 (en) 2017-09-28 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Metal insulator metal capacitor structure having high capacitance
US10707180B2 (en) * 2018-04-23 2020-07-07 Nxp Usa, Inc. Impedance matching circuit for RF devices and method therefor
JP7389429B2 (en) 2019-10-21 2023-11-30 株式会社テクノ菱和 Plasma sterilized water generator
US20220208755A1 (en) * 2020-12-30 2022-06-30 Texas Instruments Incorporated Fring capacitor, integrated circuit and manufacturing process for the fringe capacitor

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1920684A1 (en) * 1969-04-23 1970-11-05 Siemens Ag Intergrated circuit capacitors of aluminium - and aluminium oxide
JPS5745968A (en) * 1980-08-29 1982-03-16 Ibm Capacitor with double dielectric unit
JPS6441262A (en) * 1987-08-07 1989-02-13 Hitachi Ltd Memory cell
JPH0354828A (en) * 1989-07-24 1991-03-08 Oki Electric Ind Co Ltd Compound conductor layer of semiconductor device, hole-making process of capacitor using compound conductor layer and compound conductor layer
JP3120867B2 (en) * 1990-05-31 2000-12-25 キヤノン株式会社 Semiconductor device including capacitance element and method of manufacturing the same
JPH04250626A (en) * 1991-01-28 1992-09-07 Matsushita Electric Ind Co Ltd Multilayer interconnection device
JPH04294575A (en) * 1991-03-23 1992-10-19 Nec Eng Ltd High-frequency semiconductor integrated circuit
US5240871A (en) * 1991-09-06 1993-08-31 Micron Technology, Inc. Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor
JP3180404B2 (en) * 1992-01-10 2001-06-25 ソニー株式会社 Method of forming capacitive element
US5674771A (en) * 1992-04-20 1997-10-07 Nippon Telegraph And Telephone Corporation Capacitor and method of manufacturing the same
JPH05304251A (en) * 1992-04-27 1993-11-16 Fujitsu Ltd Semiconductor device
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials
JP2842770B2 (en) * 1993-09-29 1999-01-06 日鉄セミコンダクター株式会社 Semiconductor integrated circuit and method of manufacturing the same
US5534462A (en) 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5525542A (en) 1995-02-24 1996-06-11 Motorola, Inc. Method for making a semiconductor device having anti-reflective coating
US5652176A (en) 1995-02-24 1997-07-29 Motorola, Inc. Method for providing trench isolation and borderless contact
JP2828135B2 (en) * 1995-10-05 1998-11-25 日本電気株式会社 MIM capacitor and manufacturing method thereof
JPH09127551A (en) * 1995-10-31 1997-05-16 Sharp Corp Semiconductor device and active matrix substrate
JPH09232517A (en) * 1996-02-21 1997-09-05 Sanyo Electric Co Ltd Dielectric element and manufacturing method thereof
JPH1022457A (en) 1996-07-03 1998-01-23 Mitsubishi Electric Corp Capacitance device and semiconductor device, and manufacture thereof
JP3731277B2 (en) * 1997-03-04 2006-01-05 ソニー株式会社 Semiconductor integrated circuit device
KR100269306B1 (en) * 1997-07-31 2000-10-16 윤종용 Integrate circuit device having buffer layer containing metal oxide stabilized by low temperature treatment and fabricating method thereof
US6184074B1 (en) * 1997-12-17 2001-02-06 Texas Instruments Incorporated Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS
KR100275727B1 (en) * 1998-01-06 2001-01-15 윤종용 Capacitor for semiconductor device & manufacturing method
KR19990080413A (en) * 1998-04-16 1999-11-05 윤종용 High dielectric constant capacitor having oxygen blocking spacer formed on sidewall of barrier layer and method of manufacturing same
KR20000001619A (en) * 1998-06-12 2000-01-15 윤종용 Capacitor having a lower electrode of a winding container shape and method of forming the same
JP2000003991A (en) * 1998-06-15 2000-01-07 Mitsubishi Electric Corp Semiconductor device and its manufacture
KR20000007467A (en) * 1998-07-03 2000-02-07 윤종용 Method of fabricating capacitor of semeiconductor device
KR100269332B1 (en) * 1998-07-07 2000-10-16 윤종용 Capacitor of a semiconductor device and method for fabricating the same
JP2000031387A (en) * 1998-07-14 2000-01-28 Fuji Electric Co Ltd Manufacture of dielectric thin film capacitor
KR100324591B1 (en) * 1998-12-24 2002-04-17 박종섭 Method for forming capacitor by using TiAIN layer as diffusion barrier of top electrode
KR100281904B1 (en) * 1999-01-18 2001-02-15 윤종용 Forming method of a capacitor improving node slope
KR100280288B1 (en) * 1999-02-04 2001-01-15 윤종용 Method for fabricating capacitor of semiconcuctor integrated circuit
KR100289739B1 (en) * 1999-04-21 2001-05-15 윤종용 Method for manufacturing self-aligned stack capacitor using electroplating method
US6329234B1 (en) * 2000-07-24 2001-12-11 Taiwan Semiconductor Manufactuirng Company Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow

Also Published As

Publication number Publication date
US6465297B1 (en) 2002-10-15
KR100890716B1 (en) 2009-03-27
KR20030038796A (en) 2003-05-16
JP2004533106A (en) 2004-10-28
CN1468443A (en) 2004-01-14
JP4216588B2 (en) 2009-01-28
WO2002029865A3 (en) 2003-04-10
CN1251302C (en) 2006-04-12
WO2002029865A2 (en) 2002-04-11

Similar Documents

Publication Publication Date Title
AU2002214042A1 (en) A supercapacitor and a method of manufacturing such a supercapacitor
AU2002217545A1 (en) Semiconductor device and its manufacturing method
AU2001283445A1 (en) Semiconductor device having passive elements and method of making same
AU2003273366A1 (en) Semiconductor component comprising a resur transistor and method of manufacturing same
AU2002330718A1 (en) Integrated circuit structure and a method of making an integrated circuit structure
AU2001267079A1 (en) Integrated electronic-optoelectronic devices and method of making the same
EP1160858A3 (en) A board for manufacturing a bga and method of manufacturing semiconductor device using thereof
AU2001267853A1 (en) Method of manufacturing integrated circuit
AU2001284459A1 (en) Aligner and method of manufacturing a device
AU2002348835A1 (en) Method of manufacturing a semiconductor device
EP1202350A3 (en) Semiconductor device and manufacturing method thereof
AU2002349581A1 (en) Semiconductor device and manufacturing method thereof
GB0106693D0 (en) Method of forming semiconductor features and a semiconductor structure
AU2001294188A1 (en) Device and method for manufacturing semiconductor
AU2001271753A1 (en) Bat and method of manufacturing
AU2002213012A1 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
AU2001282884A1 (en) Electronic component and method of manufacture
AU2001260500A1 (en) A method of electronic component fabrication and an electronic component
EP1174916A3 (en) Semiconductor device and semiconductor device manufacturing method
GB0023248D0 (en) A semiconductor structure and the method of manufacturing the same
AU2002228766A1 (en) Semiconductor device and method of making same
EP1174914A3 (en) Semiconductor device and semiconductor device manufacturing method
AU3230801A (en) Semiconductor device fabrication method and semiconductor device fabrication device
AU6035000A (en) Semiconductor and manufacturing method for semiconductor
AU2001261345A1 (en) Method of manufacturing a semiconductor component and semiconductor component thereof