AU2001263382A1 - Semiconductor component and method of manufacturing - Google Patents
Semiconductor component and method of manufacturingInfo
- Publication number
- AU2001263382A1 AU2001263382A1 AU2001263382A AU6338201A AU2001263382A1 AU 2001263382 A1 AU2001263382 A1 AU 2001263382A1 AU 2001263382 A AU2001263382 A AU 2001263382A AU 6338201 A AU6338201 A AU 6338201A AU 2001263382 A1 AU2001263382 A1 AU 2001263382A1
- Authority
- AU
- Australia
- Prior art keywords
- manufacturing
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60503700A | 2000-06-27 | 2000-06-27 | |
| US09605037 | 2000-06-27 | ||
| PCT/US2001/016689 WO2002001624A1 (en) | 2000-06-27 | 2001-05-23 | Semiconductor component and method of manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001263382A1 true AU2001263382A1 (en) | 2002-01-08 |
Family
ID=24422001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001263382A Abandoned AU2001263382A1 (en) | 2000-06-27 | 2001-05-23 | Semiconductor component and method of manufacturing |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2001263382A1 (en) |
| WO (1) | WO2002001624A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1439570A1 (en) * | 2003-01-14 | 2004-07-21 | Interuniversitair Microelektronica Centrum ( Imec) | SiGe strain relaxed buffer for high mobility devices and a method of fabricating it |
| DE102004033149B4 (en) * | 2004-07-08 | 2006-09-28 | Infineon Technologies Ag | A method of fabricating a dual gate transistor, a memory cell, a vertical transistor, and buried word or bit lines, each using a buried etch stop layer |
| JP4946247B2 (en) * | 2006-08-04 | 2012-06-06 | 信越半導体株式会社 | Epitaxial substrate and liquid phase epitaxial growth method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19755979A1 (en) * | 1996-12-09 | 1999-06-10 | Inst Halbleiterphysik Gmbh | Silicon germanium heterobipolar transistor |
| DE60042045D1 (en) * | 1999-06-22 | 2009-06-04 | Panasonic Corp | Heterojunction bipolar transistors and corresponding manufacturing methods |
-
2001
- 2001-05-23 WO PCT/US2001/016689 patent/WO2002001624A1/en active Application Filing
- 2001-05-23 AU AU2001263382A patent/AU2001263382A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002001624A1 (en) | 2002-01-03 |
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