AU2001232341A1 - Iii nitride compound semiconductor element and electrode forming method - Google Patents

Iii nitride compound semiconductor element and electrode forming method

Info

Publication number
AU2001232341A1
AU2001232341A1 AU2001232341A AU3234101A AU2001232341A1 AU 2001232341 A1 AU2001232341 A1 AU 2001232341A1 AU 2001232341 A AU2001232341 A AU 2001232341A AU 3234101 A AU3234101 A AU 3234101A AU 2001232341 A1 AU2001232341 A1 AU 2001232341A1
Authority
AU
Australia
Prior art keywords
semiconductor element
forming method
compound semiconductor
iii nitride
electrode forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001232341A
Inventor
Makoto Asai
Yasuo Koide
Masanori Murakami
Naoki Shibata
Toshiya Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001232341A1 publication Critical patent/AU2001232341A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H01L21/242—Alloying of doping materials with AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
AU2001232341A 2000-03-27 2001-02-19 Iii nitride compound semiconductor element and electrode forming method Abandoned AU2001232341A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000085932A JP3846150B2 (en) 2000-03-27 2000-03-27 Group III nitride compound semiconductor device and electrode forming method
JP2000-85932 2000-03-27
PCT/JP2001/001178 WO2001073829A1 (en) 2000-03-27 2001-02-19 Iii nitride compound semiconductor element and electrode forming method

Publications (1)

Publication Number Publication Date
AU2001232341A1 true AU2001232341A1 (en) 2001-10-08

Family

ID=18602177

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001232341A Abandoned AU2001232341A1 (en) 2000-03-27 2001-02-19 Iii nitride compound semiconductor element and electrode forming method

Country Status (4)

Country Link
US (2) US6806571B2 (en)
JP (1) JP3846150B2 (en)
AU (1) AU2001232341A1 (en)
WO (1) WO2001073829A1 (en)

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JP3778765B2 (en) * 2000-03-24 2006-05-24 三洋電機株式会社 Nitride-based semiconductor device and manufacturing method thereof
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
TWI249255B (en) * 2004-04-07 2006-02-11 Epitech Corp Ltd Nitride light-emitting diode and mthod for manufacturing the same
JP5015417B2 (en) * 2004-06-09 2012-08-29 住友電気工業株式会社 GaN crystal manufacturing method
JP4841844B2 (en) 2005-01-05 2011-12-21 三菱電機株式会社 Semiconductor element
JP4925601B2 (en) * 2005-04-18 2012-05-09 三菱電機株式会社 Semiconductor device
DE102005041643A1 (en) * 2005-08-29 2007-03-01 Forschungsverbund Berlin E.V. Semiconductor method for producing an isolated semiconductor substrate uses a masking layer with holes and an output layer
JP2007134388A (en) * 2005-11-08 2007-05-31 Sharp Corp Nitride based semiconductor element and process for fabricating same
JP4738999B2 (en) * 2005-12-06 2011-08-03 豊田合成株式会社 Semiconductor optical device manufacturing method
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP5068020B2 (en) * 2006-02-20 2012-11-07 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting device
JP5047508B2 (en) * 2006-02-27 2012-10-10 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting device
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
WO2008054995A2 (en) * 2006-10-18 2008-05-08 Nitek, Inc. Vertical deep ultraviolet light emitting diodes
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
KR101515100B1 (en) * 2008-10-21 2015-04-24 삼성전자주식회사 Light emitting diode and method for manufacturing the same
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP4886766B2 (en) * 2008-12-25 2012-02-29 株式会社東芝 Semiconductor light emitting device
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
JP5526712B2 (en) * 2009-11-05 2014-06-18 豊田合成株式会社 Semiconductor light emitting device
JP5437114B2 (en) * 2010-03-02 2014-03-12 次世代パワーデバイス技術研究組合 Manufacturing method of semiconductor transistor
FR2972563B1 (en) 2011-03-07 2013-03-01 Altis Semiconductor Snc METHOD FOR TREATING AN OXIDIZED METAL NITRIDE LAYER
JP5928366B2 (en) * 2013-02-13 2016-06-01 豊田合成株式会社 Method for producing group III nitride semiconductor
TWI577046B (en) * 2014-12-23 2017-04-01 錼創科技股份有限公司 Semiconductor light-emitting device and manufacturing method thereof
CN113471060B (en) * 2021-05-27 2022-09-09 南昌大学 Preparation method for reducing AlN film micro-holes on silicon substrate

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Publication number Priority date Publication date Assignee Title
US5164850A (en) * 1990-01-29 1992-11-17 Sanyo Electric Co., Ltd. Liquid crystal device including tantalum nitride with specific nitriding ratio
JP2803742B2 (en) 1993-04-28 1998-09-24 日亜化学工業株式会社 Gallium nitride-based compound semiconductor light emitting device and method for forming electrode thereof
EP0622858B2 (en) 1993-04-28 2004-09-29 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device and method of producing the same
JPH0832115A (en) * 1994-07-19 1996-02-02 Sharp Corp Electrode structure and its manufacture
JPH10247747A (en) * 1997-03-05 1998-09-14 Toshiba Corp Semiconductor light emitting device and manufacture thereof
JPH10321954A (en) * 1997-05-15 1998-12-04 Fuji Electric Co Ltd Group iii nitride semiconductor element and manufacture thereof
CN1284251C (en) * 1998-05-08 2006-11-08 三星电子株式会社 Method for activating compound semiconductor layer and making it into p-type compound seiconductor layer
JPH11330546A (en) * 1998-05-12 1999-11-30 Fuji Electric Co Ltd Iii nitride semiconductor material and its manufacture

Also Published As

Publication number Publication date
JP2001274459A (en) 2001-10-05
US7018915B2 (en) 2006-03-28
JP3846150B2 (en) 2006-11-15
US20030155575A1 (en) 2003-08-21
US20040222499A1 (en) 2004-11-11
US6806571B2 (en) 2004-10-19
WO2001073829A1 (en) 2001-10-04

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