AU2002222970A1 - Group iii nitride compound semiconductor device - Google Patents

Group iii nitride compound semiconductor device

Info

Publication number
AU2002222970A1
AU2002222970A1 AU2002222970A AU2297002A AU2002222970A1 AU 2002222970 A1 AU2002222970 A1 AU 2002222970A1 AU 2002222970 A AU2002222970 A AU 2002222970A AU 2297002 A AU2297002 A AU 2297002A AU 2002222970 A1 AU2002222970 A1 AU 2002222970A1
Authority
AU
Australia
Prior art keywords
semiconductor device
compound semiconductor
group iii
iii nitride
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002222970A
Inventor
Masanobu Senda
Naoki Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2002222970A1 publication Critical patent/AU2002222970A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
AU2002222970A 2000-07-19 2001-07-18 Group iii nitride compound semiconductor device Abandoned AU2002222970A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-219798 2000-07-19
JP2000219798A JP3963068B2 (en) 2000-07-19 2000-07-19 Method for producing group III nitride compound semiconductor device
PCT/JP2001/006238 WO2002007233A2 (en) 2000-07-19 2001-07-18 Group iii nitride compound semiconductor device

Publications (1)

Publication Number Publication Date
AU2002222970A1 true AU2002222970A1 (en) 2002-01-30

Family

ID=18714515

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002222970A Abandoned AU2002222970A1 (en) 2000-07-19 2001-07-18 Group iii nitride compound semiconductor device

Country Status (9)

Country Link
US (1) US6897139B2 (en)
EP (1) EP1301947B1 (en)
JP (1) JP3963068B2 (en)
KR (1) KR100595105B1 (en)
CN (1) CN1200466C (en)
AU (1) AU2002222970A1 (en)
DE (1) DE60130461T2 (en)
TW (1) TW498564B (en)
WO (1) WO2002007233A2 (en)

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US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
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KR101149677B1 (en) * 2010-01-20 2012-07-11 주식회사 엘지실트론 A manufacturing method for flexible device and flexible device, solar cell, LED manufactured by the same
CN102208338B (en) * 2010-03-30 2014-04-23 杭州海鲸光电科技有限公司 Sapphire-base compound substrate and manufacturing method thereof
US8409895B2 (en) * 2010-12-16 2013-04-02 Applied Materials, Inc. Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
KR101883840B1 (en) * 2011-08-31 2018-08-01 엘지이노텍 주식회사 Light emitting diode
JP6196246B2 (en) * 2013-02-06 2017-09-13 東洋炭素株式会社 Silicon carbide-tantalum carbide composite and susceptor
US9929310B2 (en) 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
KR102187499B1 (en) * 2014-05-19 2020-12-08 엘지이노텍 주식회사 Light emitting device and lighting system having the same
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Also Published As

Publication number Publication date
US6897139B2 (en) 2005-05-24
TW498564B (en) 2002-08-11
CN1200466C (en) 2005-05-04
WO2002007233A3 (en) 2002-08-22
CN1436375A (en) 2003-08-13
US20030134447A1 (en) 2003-07-17
WO2002007233A2 (en) 2002-01-24
DE60130461T2 (en) 2008-06-12
DE60130461D1 (en) 2007-10-25
EP1301947A2 (en) 2003-04-16
KR20030016266A (en) 2003-02-26
JP2002043617A (en) 2002-02-08
EP1301947B1 (en) 2007-09-12
JP3963068B2 (en) 2007-08-22
KR100595105B1 (en) 2006-07-03

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