AU2001232297A1 - Nitride semiconductor laser device - Google Patents

Nitride semiconductor laser device

Info

Publication number
AU2001232297A1
AU2001232297A1 AU2001232297A AU2001232297A AU2001232297A1 AU 2001232297 A1 AU2001232297 A1 AU 2001232297A1 AU 2001232297 A AU2001232297 A AU 2001232297A AU 2001232297 A AU2001232297 A AU 2001232297A AU 2001232297 A1 AU2001232297 A1 AU 2001232297A1
Authority
AU
Australia
Prior art keywords
semiconductor laser
nitride semiconductor
laser device
nitride
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU2001232297A
Other versions
AU2001232297B2 (en
Inventor
Masahiko Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority claimed from PCT/JP2001/001063 external-priority patent/WO2001061804A1/en
Publication of AU2001232297A1 publication Critical patent/AU2001232297A1/en
Priority to AU2005204248A priority Critical patent/AU2005204248B2/en
Application granted granted Critical
Publication of AU2001232297B2 publication Critical patent/AU2001232297B2/en
Anticipated expiration legal-status Critical
Expired legal-status Critical Current

Links

AU2001232297A 2000-02-16 2001-02-15 Nitride semiconductor laser device Expired AU2001232297B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2005204248A AU2005204248B2 (en) 2000-02-16 2005-08-25 Nitride semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000038304 2000-02-16
JP2000-38304 2000-02-16
PCT/JP2001/001063 WO2001061804A1 (en) 2000-02-16 2001-02-15 Nitride semiconductor laser device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
AU2005204248A Division AU2005204248B2 (en) 2000-02-16 2005-08-25 Nitride semiconductor device

Publications (2)

Publication Number Publication Date
AU2001232297A1 true AU2001232297A1 (en) 2001-11-08
AU2001232297B2 AU2001232297B2 (en) 2005-10-06

Family

ID=18562064

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2001232297A Expired AU2001232297B2 (en) 2000-02-16 2001-02-15 Nitride semiconductor laser device
AU3229701A Pending AU3229701A (en) 2000-02-16 2001-02-15 Nitride semiconductor laser device

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU3229701A Pending AU3229701A (en) 2000-02-16 2001-02-15 Nitride semiconductor laser device

Country Status (13)

Country Link
US (2) US6838701B2 (en)
EP (1) EP1276186B1 (en)
JP (1) JP3864782B2 (en)
KR (2) KR100753146B1 (en)
CN (1) CN1203596C (en)
AU (2) AU2001232297B2 (en)
CA (1) CA2400121C (en)
IL (2) IL151192A0 (en)
NO (1) NO332908B1 (en)
PL (1) PL202938B1 (en)
RU (1) RU2238607C2 (en)
TW (1) TW501288B (en)
WO (1) WO2001061804A1 (en)

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KR100631898B1 (en) * 2005-01-19 2006-10-11 삼성전기주식회사 Gallium nitride based light emitting device having ESD protection capability and method for manufacturing same
US20070131947A1 (en) * 2005-12-13 2007-06-14 Lg Innotek Co., Ltd Light-emitting device
US20090001402A1 (en) * 2006-03-22 2009-01-01 Rohm Co., Ltd. Semiconductor element and method of making the same
JP2007329350A (en) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd Semiconductor device
JP5008911B2 (en) * 2006-07-04 2012-08-22 ローム株式会社 Semiconductor light emitting device and manufacturing method thereof
JP4353232B2 (en) * 2006-10-24 2009-10-28 ソニー株式会社 Light emitting element
JP2008171997A (en) * 2007-01-11 2008-07-24 Rohm Co Ltd Gan-based semiconductor light-emitting element
US9318874B2 (en) * 2009-06-03 2016-04-19 Nichia Corporation Semiconductor device and method of manufacturing semiconductor device
JP2011009610A (en) 2009-06-29 2011-01-13 Sharp Corp Nitride semiconductor laser device and wafer
RU2455739C2 (en) * 2010-03-19 2012-07-10 Владимир Александрович Филоненко Line of laser diodes
US20120037946A1 (en) * 2010-08-12 2012-02-16 Chi Mei Lighting Technology Corporation Light emitting devices
JP5204170B2 (en) * 2010-08-25 2013-06-05 シャープ株式会社 Gallium nitride semiconductor laser and manufacturing method thereof
TWI416765B (en) * 2011-01-17 2013-11-21 Light emitting diodes
CN103000777B (en) * 2011-09-15 2018-08-07 晶元光电股份有限公司 Light-emitting component
JP2012023406A (en) * 2011-10-28 2012-02-02 Sharp Corp Nitride semiconductor light-emitting element and gallium nitride-based compound semiconductor laser element comprising the same
US8716743B2 (en) * 2012-02-02 2014-05-06 Epistar Corporation Optoelectronic semiconductor device and the manufacturing method thereof
CN106299069A (en) * 2016-08-31 2017-01-04 厦门三安光电有限公司 A kind of laser diode and preparation method thereof
DE102016120685A1 (en) * 2016-10-28 2018-05-03 Osram Opto Semiconductors Gmbh Method for producing a semiconductor laser and semiconductor laser

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