AU2001236109A1 - Iii nitride compound semiconductor device - Google Patents
Iii nitride compound semiconductor deviceInfo
- Publication number
- AU2001236109A1 AU2001236109A1 AU2001236109A AU3610901A AU2001236109A1 AU 2001236109 A1 AU2001236109 A1 AU 2001236109A1 AU 2001236109 A AU2001236109 A AU 2001236109A AU 3610901 A AU3610901 A AU 3610901A AU 2001236109 A1 AU2001236109 A1 AU 2001236109A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- compound semiconductor
- iii nitride
- nitride compound
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- -1 nitride compound Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-062223 | 2000-03-07 | ||
JP2000062223A JP4026294B2 (en) | 2000-03-07 | 2000-03-07 | Method for producing group III nitride compound semiconductor device |
PCT/JP2001/001736 WO2001067524A1 (en) | 2000-03-07 | 2001-03-06 | Iii nitride compound semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001236109A1 true AU2001236109A1 (en) | 2001-09-17 |
Family
ID=18582261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001236109A Abandoned AU2001236109A1 (en) | 2000-03-07 | 2001-03-06 | Iii nitride compound semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US7095059B2 (en) |
EP (1) | EP1271662A4 (en) |
JP (1) | JP4026294B2 (en) |
KR (1) | KR100542165B1 (en) |
AU (1) | AU2001236109A1 (en) |
TW (1) | TW527736B (en) |
WO (1) | WO2001067524A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4055503B2 (en) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | Semiconductor light emitting device |
JP5800452B2 (en) * | 2001-07-24 | 2015-10-28 | 日亜化学工業株式会社 | Semiconductor light emitting device |
US8294172B2 (en) | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
CN101088167B (en) | 2005-11-28 | 2011-07-06 | 三菱电机株式会社 | Solar cell unit |
US8173995B2 (en) | 2005-12-23 | 2012-05-08 | E. I. Du Pont De Nemours And Company | Electronic device including an organic active layer and process for forming the electronic device |
JP4290747B2 (en) * | 2006-06-23 | 2009-07-08 | シャープ株式会社 | Photoelectric conversion element and photoelectric conversion element with interconnector |
US20100000673A1 (en) * | 2006-08-02 | 2010-01-07 | Ulvac, Inc. | Film forming method and film forming apparatus |
KR100999800B1 (en) * | 2010-02-04 | 2010-12-08 | 엘지이노텍 주식회사 | Light emitting device package and method for fabricating the same |
DE102011001998A1 (en) | 2011-04-12 | 2012-10-18 | Schott Solar Ag | solar cell |
DE102011001999A1 (en) | 2011-04-12 | 2012-10-18 | Schott Solar Ag | solar cell |
EP2881982B1 (en) * | 2013-12-05 | 2019-09-04 | IMEC vzw | Method for fabricating cmos compatible contact layers in semiconductor devices |
JP6805674B2 (en) * | 2016-09-21 | 2020-12-23 | 豊田合成株式会社 | Light emitting element and its manufacturing method |
US20190189850A1 (en) * | 2017-12-19 | 2019-06-20 | Epistar Corporation | Light-emitting device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5164955A (en) * | 1991-06-17 | 1992-11-17 | Eastman Kodak Company | Laser diode with volume refractive index grating |
EP0622858B2 (en) * | 1993-04-28 | 2004-09-29 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
JP3620926B2 (en) * | 1995-06-16 | 2005-02-16 | 豊田合成株式会社 | P-conducting group III nitride semiconductor electrode, electrode forming method and device |
JP3009095B2 (en) * | 1995-10-27 | 2000-02-14 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3292044B2 (en) * | 1996-05-31 | 2002-06-17 | 豊田合成株式会社 | P-conductivity group III nitride semiconductor electrode pad, device having the same, and device manufacturing method |
US6291840B1 (en) * | 1996-11-29 | 2001-09-18 | Toyoda Gosei Co., Ltd. | GaN related compound semiconductor light-emitting device |
US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
JP3423175B2 (en) * | 1997-02-24 | 2003-07-07 | 三洋電機株式会社 | Light emitting device manufacturing method |
JP3342336B2 (en) * | 1997-02-25 | 2002-11-05 | 三洋電機株式会社 | Semiconductor light emitting device |
JP3940438B2 (en) * | 1997-03-19 | 2007-07-04 | シャープ株式会社 | Semiconductor light emitting device |
DE19820777C2 (en) * | 1997-05-08 | 2003-06-18 | Showa Denko Kk | Electrode for semiconductor light emitting devices |
JP3631359B2 (en) * | 1997-11-14 | 2005-03-23 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
EP1928034A3 (en) * | 1997-12-15 | 2008-06-18 | Philips Lumileds Lighting Company LLC | Light emitting device |
JP4183299B2 (en) * | 1998-03-25 | 2008-11-19 | 株式会社東芝 | Gallium nitride compound semiconductor light emitting device |
JP3625377B2 (en) * | 1998-05-25 | 2005-03-02 | ローム株式会社 | Semiconductor light emitting device |
US6468676B1 (en) * | 1999-01-02 | 2002-10-22 | Minolta Co., Ltd. | Organic electroluminescent display element, finder screen display device, finder and optical device |
-
2000
- 2000-03-07 JP JP2000062223A patent/JP4026294B2/en not_active Expired - Fee Related
-
2001
- 2001-03-06 AU AU2001236109A patent/AU2001236109A1/en not_active Abandoned
- 2001-03-06 WO PCT/JP2001/001736 patent/WO2001067524A1/en active IP Right Grant
- 2001-03-06 KR KR1020027011561A patent/KR100542165B1/en not_active IP Right Cessation
- 2001-03-06 TW TW090105099A patent/TW527736B/en not_active IP Right Cessation
- 2001-03-06 EP EP01908357A patent/EP1271662A4/en not_active Withdrawn
- 2001-05-06 US US10/220,878 patent/US7095059B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1271662A4 (en) | 2005-04-13 |
US7095059B2 (en) | 2006-08-22 |
US20030025115A1 (en) | 2003-02-06 |
EP1271662A1 (en) | 2003-01-02 |
JP4026294B2 (en) | 2007-12-26 |
KR100542165B1 (en) | 2006-01-11 |
KR20020087067A (en) | 2002-11-21 |
TW527736B (en) | 2003-04-11 |
WO2001067524A1 (en) | 2001-09-13 |
JP2001250985A (en) | 2001-09-14 |
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