JPS649382A - Magnetic sensor - Google Patents

Magnetic sensor

Info

Publication number
JPS649382A
JPS649382A JP62163621A JP16362187A JPS649382A JP S649382 A JPS649382 A JP S649382A JP 62163621 A JP62163621 A JP 62163621A JP 16362187 A JP16362187 A JP 16362187A JP S649382 A JPS649382 A JP S649382A
Authority
JP
Japan
Prior art keywords
electrode
film
bonded
bonding layer
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62163621A
Other languages
Japanese (ja)
Inventor
Katsuhiko Narita
Kozo Machida
Hiroshi Nakamura
Takehiko Sone
Shinobu Okuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP62163621A priority Critical patent/JPS649382A/en
Publication of JPS649382A publication Critical patent/JPS649382A/en
Pending legal-status Critical Current

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  • Measuring Magnetic Variables (AREA)

Abstract

PURPOSE:To make it possible to prevent separation due to ultrasonic wave vibration and the like, by forming a separation preventing film around each electrode so as to have an overhung part to cover the peripheral part of the upper surface of the electrode other than a part, where wire is bonded on the upper surface of the electrode. CONSTITUTION:In a magnetic sensor 20, a semiconductor thin film 21 is bonded to the upper part of a substrate 23 through a bonding layer 22. An electrode 24 is provided at each tip of the thin film 21. A separation preventing film 25 is provided. A flange part 25b is deposited on the upper surface of the bonding layer 22. An overhung part 25a is provided on an upper surface 24a of the electrode 24. Thus the electrode 24 is held on the bonding layer 22 with the film 25 so that the electrode 24 is not floated up. Of the upper surface 24a of the electrode 24, a part 24c, to which a wire is bonded, is not covered with the film 25 but exposed. Since the electrode 24 is mechanically reinforced with the film 25 in this way, the electrode 24 is hard to be vibrated, and separation due to lateral deviation at the junction surface with the semiconductor thin film 21 is not yielded.
JP62163621A 1987-06-30 1987-06-30 Magnetic sensor Pending JPS649382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62163621A JPS649382A (en) 1987-06-30 1987-06-30 Magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62163621A JPS649382A (en) 1987-06-30 1987-06-30 Magnetic sensor

Publications (1)

Publication Number Publication Date
JPS649382A true JPS649382A (en) 1989-01-12

Family

ID=15777409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62163621A Pending JPS649382A (en) 1987-06-30 1987-06-30 Magnetic sensor

Country Status (1)

Country Link
JP (1) JPS649382A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001061804A1 (en) * 2000-02-16 2001-08-23 Nichia Corporation Nitride semiconductor laser device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143785A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor device
JPS60145628A (en) * 1984-01-10 1985-08-01 Nec Corp Semiconductor device
JPS6117146A (en) * 1984-07-03 1986-01-25 Toshiba Corp Mask for laser marking
JPS622268B2 (en) * 1976-02-13 1987-01-19 Staalkat Bv

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622268B2 (en) * 1976-02-13 1987-01-19 Staalkat Bv
JPS52143785A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor device
JPS60145628A (en) * 1984-01-10 1985-08-01 Nec Corp Semiconductor device
JPS6117146A (en) * 1984-07-03 1986-01-25 Toshiba Corp Mask for laser marking

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001061804A1 (en) * 2000-02-16 2001-08-23 Nichia Corporation Nitride semiconductor laser device
US6838701B2 (en) 2000-02-16 2005-01-04 Nichia Corporation Nitride semiconductor laser device

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