GB0030015D0 - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
GB0030015D0
GB0030015D0 GB0030015A GB0030015A GB0030015D0 GB 0030015 D0 GB0030015 D0 GB 0030015D0 GB 0030015 A GB0030015 A GB 0030015A GB 0030015 A GB0030015 A GB 0030015A GB 0030015 D0 GB0030015 D0 GB 0030015D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0030015A
Other versions
GB2369929A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Southampton
Original Assignee
University of Southampton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Southampton filed Critical University of Southampton
Priority to GB0030015A priority Critical patent/GB2369929A/en
Publication of GB0030015D0 publication Critical patent/GB0030015D0/en
Priority to AU2002220897A priority patent/AU2002220897A1/en
Priority to PCT/GB2001/005387 priority patent/WO2002047223A1/en
Publication of GB2369929A publication Critical patent/GB2369929A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB0030015A 2000-12-08 2000-12-08 Semiconductor laser device Withdrawn GB2369929A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0030015A GB2369929A (en) 2000-12-08 2000-12-08 Semiconductor laser device
AU2002220897A AU2002220897A1 (en) 2000-12-08 2001-12-05 Optically pumped vertical cavity semiconductor laser device
PCT/GB2001/005387 WO2002047223A1 (en) 2000-12-08 2001-12-05 Optically pumped vertical cavity semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0030015A GB2369929A (en) 2000-12-08 2000-12-08 Semiconductor laser device

Publications (2)

Publication Number Publication Date
GB0030015D0 true GB0030015D0 (en) 2001-01-24
GB2369929A GB2369929A (en) 2002-06-12

Family

ID=9904743

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0030015A Withdrawn GB2369929A (en) 2000-12-08 2000-12-08 Semiconductor laser device

Country Status (3)

Country Link
AU (1) AU2002220897A1 (en)
GB (1) GB2369929A (en)
WO (1) WO2002047223A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260183A1 (en) 2002-12-20 2004-07-15 Osram Opto Semiconductors Gmbh Vertically emitting optically pumped semiconductor laser with external resonator and semiconductor body with quantum trough structure as active zone with intertrough barriers
GB2399941A (en) * 2003-03-24 2004-09-29 Univ Strathclyde Vertical cavity semiconductor optical devices
FR2870051B1 (en) * 2004-05-04 2009-04-03 Commissariat Energie Atomique RADIATION TRANSMITTER WITH INCLINE PUMP BEAM
DE602005001810T2 (en) * 2004-06-19 2008-04-17 Samsung Electronics Co., Ltd., Suwon Multi-wavelength laser system with external resonator
KR101015499B1 (en) 2004-06-19 2011-02-16 삼성전자주식회사 Laser device emitting a plurality of wavelength and a laser pumping unit for the same
DE102005058900A1 (en) * 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Vertical emitting, optically pumped semiconductor laser with external resonator
DE102006002879B4 (en) * 2006-01-20 2008-11-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor arrangement for an optically pumped surface emitting semiconductor laser
DE102006042196A1 (en) 2006-06-30 2008-01-03 Osram Opto Semiconductors Gmbh Surface emitting semiconductor body with vertical emission direction and stabilized emission wavelength
DE102007029257A1 (en) * 2007-06-15 2008-12-18 Landesstiftung Baden-Württemberg gGmbH Laser amplifier system
DE102008038961B9 (en) 2008-08-13 2019-12-05 Osram Opto Semiconductors Gmbh A surface-emitting semiconductor laser chip, laser arrangement with a surface-emitting semiconductor laser chip and method for producing a surface-emitting semiconductor laser chip
EP2325955A1 (en) * 2009-11-23 2011-05-25 Klastech- Karpushko Laser Technologies GmbH Resonant cavity optically pumped laser and method of operating the same
KR20140046419A (en) 2011-05-16 2014-04-18 베르라세 테크놀러지스 엘엘씨 Resonator-enhanced optoelectronic devices and methods of making same
DE102011107360A1 (en) * 2011-06-29 2013-01-03 Karlsruher Institut für Technologie Micro-optical element, micro-optical array and optical sensor system
CA2879528C (en) * 2012-07-27 2021-01-05 Thorlabs, Inc. Mems-tunable short cavity laser
US9716364B2 (en) 2014-03-18 2017-07-25 Fraunhofer•Gesellschaft Zur Förderung der Angewandten Forschung E.V. Optically pumped semiconductor disk laser
DE102014205022A1 (en) 2014-03-18 2015-09-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optically pumped semiconductor disk laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265116A (en) * 1988-02-02 1993-11-23 Massachusetts Institute Of Technology Microchip laser
US5513203A (en) * 1995-04-05 1996-04-30 At&T Corp. Surface emitting laser having improved pumping efficiency
AU9472298A (en) * 1997-09-05 1999-03-22 Micron Optics, Inc. Tunable fiber fabry-perot surface-emitting lasers
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser

Also Published As

Publication number Publication date
AU2002220897A1 (en) 2002-06-18
GB2369929A (en) 2002-06-12
WO2002047223A1 (en) 2002-06-13

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)