AU2002220897A1 - Optically pumped vertical cavity semiconductor laser device - Google Patents

Optically pumped vertical cavity semiconductor laser device

Info

Publication number
AU2002220897A1
AU2002220897A1 AU2002220897A AU2089702A AU2002220897A1 AU 2002220897 A1 AU2002220897 A1 AU 2002220897A1 AU 2002220897 A AU2002220897 A AU 2002220897A AU 2089702 A AU2089702 A AU 2089702A AU 2002220897 A1 AU2002220897 A1 AU 2002220897A1
Authority
AU
Australia
Prior art keywords
semiconductor laser
laser device
vertical cavity
optically pumped
cavity semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002220897A
Inventor
Arnaud Garnache-Creuillot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Southampton
Original Assignee
University of Southampton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Southampton filed Critical University of Southampton
Publication of AU2002220897A1 publication Critical patent/AU2002220897A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU2002220897A 2000-12-08 2001-12-05 Optically pumped vertical cavity semiconductor laser device Abandoned AU2002220897A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0030015 2000-12-08
GB0030015A GB2369929A (en) 2000-12-08 2000-12-08 Semiconductor laser device
PCT/GB2001/005387 WO2002047223A1 (en) 2000-12-08 2001-12-05 Optically pumped vertical cavity semiconductor laser device

Publications (1)

Publication Number Publication Date
AU2002220897A1 true AU2002220897A1 (en) 2002-06-18

Family

ID=9904743

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002220897A Abandoned AU2002220897A1 (en) 2000-12-08 2001-12-05 Optically pumped vertical cavity semiconductor laser device

Country Status (3)

Country Link
AU (1) AU2002220897A1 (en)
GB (1) GB2369929A (en)
WO (1) WO2002047223A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260183A1 (en) * 2002-12-20 2004-07-15 Osram Opto Semiconductors Gmbh Vertically emitting optically pumped semiconductor laser with external resonator and semiconductor body with quantum trough structure as active zone with intertrough barriers
GB2399941A (en) * 2003-03-24 2004-09-29 Univ Strathclyde Vertical cavity semiconductor optical devices
FR2870051B1 (en) * 2004-05-04 2009-04-03 Commissariat Energie Atomique RADIATION TRANSMITTER WITH INCLINE PUMP BEAM
KR101015499B1 (en) 2004-06-19 2011-02-16 삼성전자주식회사 Laser device emitting a plurality of wavelength and a laser pumping unit for the same
EP1608049B1 (en) * 2004-06-19 2007-08-01 Samsung Electronics Co., Ltd. External cavity plural wavelength laser system
DE102005058900A1 (en) * 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Vertical emitting, optically pumped semiconductor laser with external resonator
DE102006002879B4 (en) * 2006-01-20 2008-11-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor arrangement for an optically pumped surface emitting semiconductor laser
DE102006042196A1 (en) * 2006-06-30 2008-01-03 Osram Opto Semiconductors Gmbh Surface emitting semiconductor body with vertical emission direction and stabilized emission wavelength
DE102007029257A1 (en) * 2007-06-15 2008-12-18 Landesstiftung Baden-Württemberg gGmbH Laser amplifier system
DE102008038961B9 (en) 2008-08-13 2019-12-05 Osram Opto Semiconductors Gmbh A surface-emitting semiconductor laser chip, laser arrangement with a surface-emitting semiconductor laser chip and method for producing a surface-emitting semiconductor laser chip
EP2325955A1 (en) * 2009-11-23 2011-05-25 Klastech- Karpushko Laser Technologies GmbH Resonant cavity optically pumped laser and method of operating the same
JP6129160B2 (en) 2011-05-16 2017-05-17 バーレイス テクノロジーズ エルエルシー Improved resonator optoelectronic device and method of fabrication
DE102011107360A1 (en) * 2011-06-29 2013-01-03 Karlsruher Institut für Technologie Micro-optical element, micro-optical array and optical sensor system
CN104521078B (en) 2012-07-27 2018-03-20 统雷有限公司 Widely tunable amplification short cavity laser
US9716364B2 (en) 2014-03-18 2017-07-25 Fraunhofer•Gesellschaft Zur Förderung der Angewandten Forschung E.V. Optically pumped semiconductor disk laser
DE102014205022A1 (en) 2014-03-18 2015-09-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optically pumped semiconductor disk laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265116A (en) * 1988-02-02 1993-11-23 Massachusetts Institute Of Technology Microchip laser
US5513203A (en) * 1995-04-05 1996-04-30 At&T Corp. Surface emitting laser having improved pumping efficiency
AU9472298A (en) * 1997-09-05 1999-03-22 Micron Optics, Inc. Tunable fiber fabry-perot surface-emitting lasers
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser

Also Published As

Publication number Publication date
GB2369929A (en) 2002-06-12
WO2002047223A1 (en) 2002-06-13
GB0030015D0 (en) 2001-01-24

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