AU2001236076A1 - Production method of iii nitride compound semiconductor substrate and semiconductor device - Google Patents
Production method of iii nitride compound semiconductor substrate and semiconductor deviceInfo
- Publication number
- AU2001236076A1 AU2001236076A1 AU2001236076A AU3607601A AU2001236076A1 AU 2001236076 A1 AU2001236076 A1 AU 2001236076A1 AU 2001236076 A AU2001236076 A AU 2001236076A AU 3607601 A AU3607601 A AU 3607601A AU 2001236076 A1 AU2001236076 A1 AU 2001236076A1
- Authority
- AU
- Australia
- Prior art keywords
- production method
- iii nitride
- nitride compound
- semiconductor device
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-130434 | 2000-04-28 | ||
JP2000130434A JP2001313259A (en) | 2000-04-28 | 2000-04-28 | Method for producing iii nitride based compound semiconductor substrate and semiconductor element |
PCT/JP2001/001663 WO2001084608A1 (en) | 2000-04-28 | 2001-03-02 | Production method of iii nitride compound semiconductor substrate and semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001236076A1 true AU2001236076A1 (en) | 2001-11-12 |
Family
ID=18639544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001236076A Abandoned AU2001236076A1 (en) | 2000-04-28 | 2001-03-02 | Production method of iii nitride compound semiconductor substrate and semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US6855620B2 (en) |
EP (1) | EP1278233A1 (en) |
JP (1) | JP2001313259A (en) |
AU (1) | AU2001236076A1 (en) |
WO (1) | WO2001084608A1 (en) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7118988B2 (en) * | 1994-08-15 | 2006-10-10 | Buerger Jr Walter Richard | Vertically wired integrated circuit and method of fabrication |
JP2001267242A (en) | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Group iii nitride-based compound semiconductor and method of manufacturing the same |
US6836498B2 (en) * | 2000-06-05 | 2004-12-28 | Sony Corporation | Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof |
JP2002280314A (en) * | 2001-03-22 | 2002-09-27 | Toyoda Gosei Co Ltd | Manufacturing method of iii nitride compound semiconductor group, and the iii nitride compound semiconductor element based thereon |
AU2002354254A1 (en) * | 2001-12-20 | 2003-07-09 | Matsushita Electric Industrial Co., Ltd. | Method for making nitride semiconductor substrate and method for making nitride semiconductor device |
JP4092927B2 (en) * | 2002-02-28 | 2008-05-28 | 豊田合成株式会社 | Group III nitride compound semiconductor, group III nitride compound semiconductor element, and method for manufacturing group III nitride compound semiconductor substrate |
JP4201541B2 (en) | 2002-07-19 | 2008-12-24 | 豊田合成株式会社 | Semiconductor crystal manufacturing method and group III nitride compound semiconductor light emitting device manufacturing method |
EP1548160A4 (en) | 2002-07-31 | 2009-04-29 | Osaka Ind Promotion Org | Method for producing group iii element nitride single crystal and group iii element nitride transparent single crystal prepared thereby |
JP4451846B2 (en) | 2003-01-14 | 2010-04-14 | パナソニック株式会社 | Method of manufacturing nitride semiconductor device |
EP1463052A1 (en) * | 2003-03-25 | 2004-09-29 | Deutsche Thomson-Brandt Gmbh | Method for representing animated menu buttons |
JP4229005B2 (en) * | 2003-06-26 | 2009-02-25 | 住友電気工業株式会社 | GaN substrate, method of manufacturing the same, and nitride semiconductor device |
JP2005191530A (en) * | 2003-12-03 | 2005-07-14 | Sumitomo Electric Ind Ltd | Light emitting device |
KR20050077902A (en) | 2004-01-29 | 2005-08-04 | 엘지전자 주식회사 | Method of growing nitride semiconductor thin film |
US8562738B2 (en) | 2004-03-11 | 2013-10-22 | Epistar Corporation | Nitride-based light-emitting device |
US7928424B2 (en) * | 2004-03-11 | 2011-04-19 | Epistar Corporation | Nitride-based light-emitting device |
US9524869B2 (en) | 2004-03-11 | 2016-12-20 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
US20060017064A1 (en) * | 2004-07-26 | 2006-01-26 | Saxler Adam W | Nitride-based transistors having laterally grown active region and methods of fabricating same |
KR20070074641A (en) * | 2004-11-24 | 2007-07-12 | 스미또모 가가꾸 가부시키가이샤 | Semiconductor multilayer substrate, method for producing same and light-emitting device |
KR100580751B1 (en) * | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | Nitride semiconductor led and fabrication method thereof |
TWI415288B (en) * | 2005-03-22 | 2013-11-11 | Sumitomo Chemical Co | Free standing substrate, method for manufacturing the same, and semiconductor light emitting element |
KR100638869B1 (en) * | 2005-06-21 | 2006-10-27 | 삼성전기주식회사 | Method of fabricating nitride type compound layer, gan substrate and vertical structure nitride type semiconductor light emitting device |
JP2007019318A (en) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | Semiconductor light emitting element, method for manufacturing substrate therefor, and method for manufacturing the same |
CN101283456B (en) * | 2005-09-29 | 2010-10-13 | 住友化学株式会社 | Manufacturing method of group III-V nitride semiconductor and manufacturing method of lighting device |
CN100474642C (en) * | 2005-10-27 | 2009-04-01 | 晶能光电(江西)有限公司 | Indium gallium aluminium nitrogen semi-conductor luminous element containing metallic chromium substrate and manufacturing method thereof |
US7790581B2 (en) * | 2006-01-09 | 2010-09-07 | International Business Machines Corporation | Semiconductor substrate with multiple crystallographic orientations |
KR101203692B1 (en) * | 2006-02-16 | 2012-11-21 | 삼성전자주식회사 | Substrate for PENDEO epitaxy and manufacturing method for the same |
JP4714192B2 (en) * | 2007-07-27 | 2011-06-29 | 住友電気工業株式会社 | Gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer |
US20090087993A1 (en) * | 2007-09-28 | 2009-04-02 | Steven Maxwell | Methods and apparatus for cost-effectively increasing feature density using a mask shrinking process with double patterning |
JP5112983B2 (en) * | 2008-08-06 | 2013-01-09 | 豊田合成株式会社 | Group III nitride semiconductor manufacturing method and seed crystal for group III nitride semiconductor growth |
CN102239538A (en) * | 2008-09-24 | 2011-11-09 | S.O.I.探测硅绝缘技术公司 | Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same |
FR2936903B1 (en) * | 2008-10-07 | 2011-01-14 | Soitec Silicon On Insulator | RELAXING A LAYER OF CONTAMINATED MATERIAL WITH APPLICATION OF A STIFFENER |
US8278193B2 (en) | 2008-10-30 | 2012-10-02 | Soitec | Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same |
US8637383B2 (en) | 2010-12-23 | 2014-01-28 | Soitec | Strain relaxation using metal materials and related structures |
TW201237963A (en) * | 2011-03-08 | 2012-09-16 | Univ Nat Chiao Tung | Method of semiconductor manufacturing process |
US8481410B1 (en) * | 2012-01-31 | 2013-07-09 | Globalfoundries Inc. | Methods of epitaxial FinFET |
JP5811009B2 (en) * | 2012-03-30 | 2015-11-11 | 豊田合成株式会社 | Group III nitride semiconductor manufacturing method and group III nitride semiconductor |
KR102007258B1 (en) * | 2012-11-21 | 2019-08-05 | 삼성전자주식회사 | Method of fabricating optoelectronic substrate |
US9385222B2 (en) | 2014-02-14 | 2016-07-05 | Infineon Technologies Ag | Semiconductor device with insert structure at a rear side and method of manufacturing |
US9318574B2 (en) * | 2014-06-18 | 2016-04-19 | International Business Machines Corporation | Method and structure for enabling high aspect ratio sacrificial gates |
US9583187B2 (en) * | 2015-03-28 | 2017-02-28 | Intel Corporation | Multistage set procedure for phase change memory |
US9899564B2 (en) * | 2016-03-23 | 2018-02-20 | Panasonic Intellectual Property Management Co., Ltd. | Group III nitride semiconductor and method for producing same |
WO2018169519A1 (en) * | 2017-03-14 | 2018-09-20 | Intel Corporation | METHODS AND APPARATUS FOR COPLANAR GaN ISLANDS INCLUDING CONFINED EPITAXIAL LAYER |
JP6845483B2 (en) * | 2018-11-26 | 2021-03-17 | 日亜化学工業株式会社 | Manufacturing method of light emitting element |
CN112397571B (en) * | 2021-01-18 | 2021-04-23 | 苏州纳维科技有限公司 | Gallium nitride substrate and semiconductor composite substrate |
Family Cites Families (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5143944B2 (en) | 1972-03-15 | 1976-11-25 | ||
JPS51137393A (en) | 1975-05-22 | 1976-11-27 | Mitsubishi Electric Corp | Manufacturing method for semiconductor light emitting device |
JPS5534646A (en) | 1978-08-30 | 1980-03-11 | Sumitomo Metal Ind Ltd | Heating method for furnace body in blowing-in of shaft furnace |
JPS57115849A (en) | 1981-01-12 | 1982-07-19 | Fujitsu Ltd | Manufacture of substrate for semiconductor device |
JPS5833882A (en) | 1981-08-21 | 1983-02-28 | Mitsubishi Electric Corp | Manufacture of light emitting diode |
JPH01316459A (en) | 1988-06-15 | 1989-12-21 | Murata Mfg Co Ltd | In-line sputtering device and method |
JP2768988B2 (en) * | 1989-08-17 | 1998-06-25 | 三菱電機株式会社 | End face coating method |
JPH06105797B2 (en) | 1989-10-19 | 1994-12-21 | 昭和電工株式会社 | Semiconductor substrate and manufacturing method thereof |
JP2623464B2 (en) | 1990-04-27 | 1997-06-25 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
JPH0484418A (en) | 1990-07-27 | 1992-03-17 | Nec Corp | Method of heteroepitaxial development of iii-v group compound semiconductor for different types of substrates |
JPH04303920A (en) | 1991-03-29 | 1992-10-27 | Nec Corp | Insulating film/iii-v compound semiconductor stacked structure on group iv substrate |
JP2954743B2 (en) | 1991-05-30 | 1999-09-27 | 京セラ株式会社 | Method for manufacturing semiconductor light emitting device |
JPH05110206A (en) | 1991-10-16 | 1993-04-30 | Kubota Corp | Method and apparatus for producing light emitting semiconductor element |
JP3352712B2 (en) | 1991-12-18 | 2002-12-03 | 浩 天野 | Gallium nitride based semiconductor device and method of manufacturing the same |
JPH05283744A (en) | 1991-12-20 | 1993-10-29 | Toshiba Corp | Semiconductor element |
JP2751963B2 (en) | 1992-06-10 | 1998-05-18 | 日亜化学工業株式会社 | Method for growing indium gallium nitride semiconductor |
JPH07249830A (en) | 1994-03-10 | 1995-09-26 | Hitachi Ltd | Manufacture of semiconductor light-emitting element |
JPH07273367A (en) | 1994-04-01 | 1995-10-20 | Mitsubishi Cable Ind Ltd | Manufacture of semiconductor substrate and light-emitting device |
JP3974667B2 (en) | 1994-08-22 | 2007-09-12 | ローム株式会社 | Manufacturing method of semiconductor light emitting device |
JPH0864791A (en) | 1994-08-23 | 1996-03-08 | Matsushita Electric Ind Co Ltd | Epitaxial growth method |
JP3326545B2 (en) | 1994-09-30 | 2002-09-24 | ローム株式会社 | Semiconductor light emitting device |
JPH08222812A (en) | 1995-02-17 | 1996-08-30 | Matsushita Electric Ind Co Ltd | Method for crystal growth of gallium nitride based compound semiconductor |
JPH08274411A (en) | 1995-03-31 | 1996-10-18 | Hitachi Ltd | Semiconductor laser |
WO1997011518A1 (en) | 1995-09-18 | 1997-03-27 | Hitachi, Ltd. | Semiconductor material, method of producing the semiconductor material, and semiconductor device |
JP3396356B2 (en) | 1995-12-11 | 2003-04-14 | 三菱電機株式会社 | Semiconductor device and method of manufacturing the same |
US5798536A (en) * | 1996-01-25 | 1998-08-25 | Rohm Co., Ltd. | Light-emitting semiconductor device and method for manufacturing the same |
JP3139445B2 (en) | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | GaN-based semiconductor growth method and GaN-based semiconductor film |
US6153010A (en) * | 1997-04-11 | 2000-11-28 | Nichia Chemical Industries Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
JPH11191657A (en) | 1997-04-11 | 1999-07-13 | Nichia Chem Ind Ltd | Growing method of nitride semiconductor and nitride semiconductor device |
DE19715572A1 (en) * | 1997-04-15 | 1998-10-22 | Telefunken Microelectron | Selective epitaxy of III-V nitride semiconductor layers |
JPH10321954A (en) | 1997-05-15 | 1998-12-04 | Fuji Electric Co Ltd | Group iii nitride semiconductor element and manufacture thereof |
JP3551751B2 (en) | 1997-05-16 | 2004-08-11 | 日亜化学工業株式会社 | Method for growing nitride semiconductor |
EP1007768A4 (en) * | 1997-07-03 | 2003-07-16 | Cbl Technologies | Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature |
JP3189877B2 (en) | 1997-07-11 | 2001-07-16 | 日本電気株式会社 | Crystal growth method of low dislocation gallium nitride |
JPH1143398A (en) | 1997-07-22 | 1999-02-16 | Mitsubishi Cable Ind Ltd | Substrate for growing gallium nitride-based crystal and use thereof |
JP3930161B2 (en) | 1997-08-29 | 2007-06-13 | 株式会社東芝 | Nitride-based semiconductor device, light-emitting device, and manufacturing method thereof |
JPH11135770A (en) | 1997-09-01 | 1999-05-21 | Sumitomo Chem Co Ltd | Iii-v compd. semiconductor, manufacture thereof and semiconductor element |
JPH11145519A (en) | 1997-09-02 | 1999-05-28 | Toshiba Corp | Semiconductor light-emitting element, semiconductor light-emitting device, and image-display device |
JP3491538B2 (en) | 1997-10-09 | 2004-01-26 | 日亜化学工業株式会社 | Method for growing nitride semiconductor and nitride semiconductor device |
JPH11135832A (en) | 1997-10-26 | 1999-05-21 | Toyoda Gosei Co Ltd | Gallium nitride group compound semiconductor and manufacture therefor |
CN100344004C (en) * | 1997-10-30 | 2007-10-17 | 住友电气工业株式会社 | GaN single crystal substrate and method of making the same |
JP3036495B2 (en) * | 1997-11-07 | 2000-04-24 | 豊田合成株式会社 | Method for manufacturing gallium nitride-based compound semiconductor |
JP3456413B2 (en) | 1997-11-26 | 2003-10-14 | 日亜化学工業株式会社 | Method for growing nitride semiconductor and nitride semiconductor device |
JP3620269B2 (en) | 1998-02-27 | 2005-02-16 | 豊田合成株式会社 | GaN-based semiconductor device manufacturing method |
US6051849A (en) | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
JP3839580B2 (en) | 1998-03-09 | 2006-11-01 | 株式会社リコー | Manufacturing method of semiconductor substrate |
JPH11274082A (en) | 1998-03-24 | 1999-10-08 | Fuji Electric Co Ltd | Group iii nitride semiconductor and fabrication thereof, and group iii nitride semiconductor device |
US6500257B1 (en) | 1998-04-17 | 2002-12-31 | Agilent Technologies, Inc. | Epitaxial material grown laterally within a trench and method for producing same |
JP3436128B2 (en) | 1998-04-28 | 2003-08-11 | 日亜化学工業株式会社 | Method for growing nitride semiconductor and nitride semiconductor device |
JPH11330546A (en) | 1998-05-12 | 1999-11-30 | Fuji Electric Co Ltd | Iii nitride semiconductor material and its manufacture |
JP4390090B2 (en) | 1998-05-18 | 2009-12-24 | シャープ株式会社 | GaN crystal film manufacturing method |
JP3460581B2 (en) | 1998-05-28 | 2003-10-27 | 日亜化学工業株式会社 | Method for growing nitride semiconductor and nitride semiconductor device |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6606335B1 (en) | 1998-07-14 | 2003-08-12 | Fujitsu Limited | Semiconductor laser, semiconductor device, and their manufacture methods |
US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
JP3316479B2 (en) | 1998-07-29 | 2002-08-19 | 三洋電機株式会社 | Semiconductor device, semiconductor light emitting device, and method of manufacturing semiconductor device |
JP3987660B2 (en) | 1998-07-31 | 2007-10-10 | シャープ株式会社 | Nitride semiconductor structure, manufacturing method thereof, and light emitting device |
JP2000044121A (en) | 1998-08-03 | 2000-02-15 | Murata Mach Ltd | Sliver guide creel for spinning machine |
JP3201475B2 (en) | 1998-09-14 | 2001-08-20 | 松下電器産業株式会社 | Semiconductor device and method of manufacturing the same |
JP3592553B2 (en) | 1998-10-15 | 2004-11-24 | 株式会社東芝 | Gallium nitride based semiconductor device |
JP2000150959A (en) | 1998-11-18 | 2000-05-30 | Hitachi Ltd | Gallium nitride compound semiconductor light emitting element |
US6255198B1 (en) * | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
JP2000174393A (en) | 1998-12-04 | 2000-06-23 | Fuji Electric Co Ltd | Group iii nitride semiconductor, its manufacture and group iii nitride semiconductor device |
JP4304750B2 (en) | 1998-12-08 | 2009-07-29 | 日亜化学工業株式会社 | Nitride semiconductor growth method and nitride semiconductor device |
JP3659050B2 (en) | 1998-12-21 | 2005-06-15 | 日亜化学工業株式会社 | Nitride semiconductor growth method and nitride semiconductor device |
JP2000261106A (en) | 1999-01-07 | 2000-09-22 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element, its manufacture and optical disk device |
JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP3594826B2 (en) * | 1999-02-09 | 2004-12-02 | パイオニア株式会社 | Nitride semiconductor light emitting device and method of manufacturing the same |
WO2000055893A1 (en) | 1999-03-17 | 2000-09-21 | Mitsubishi Cable Industries, Ltd. | Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
JP4288743B2 (en) | 1999-03-24 | 2009-07-01 | 日亜化学工業株式会社 | Nitride semiconductor growth method |
JP4231189B2 (en) | 1999-04-14 | 2009-02-25 | パナソニック株式会社 | Method for producing group III nitride compound semiconductor substrate |
TW464953B (en) | 1999-04-14 | 2001-11-21 | Matsushita Electronics Corp | Method of manufacturing III nitride base compound semiconductor substrate |
JP2001044121A (en) | 1999-06-07 | 2001-02-16 | Agilent Technol Inc | Epitaxial layer structure and manufacture thereof |
JP3786544B2 (en) | 1999-06-10 | 2006-06-14 | パイオニア株式会社 | Nitride semiconductor device manufacturing method and device manufactured by the method |
JP3791246B2 (en) | 1999-06-15 | 2006-06-28 | 日亜化学工業株式会社 | Nitride semiconductor growth method, nitride semiconductor device manufacturing method using the same, and nitride semiconductor laser device manufacturing method |
JP2000357820A (en) * | 1999-06-15 | 2000-12-26 | Pioneer Electronic Corp | Gallium nitride semiconductor light emitting element and its manufacture |
JP4005275B2 (en) | 1999-08-19 | 2007-11-07 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP4274504B2 (en) | 1999-09-20 | 2009-06-10 | キヤノン株式会社 | Semiconductor thin film structure |
JP2001111174A (en) | 1999-10-06 | 2001-04-20 | Fuji Photo Film Co Ltd | Substrate for semiconductor device and method of fabrication thereof and semiconductor device using that substrate |
JP4055304B2 (en) | 1999-10-12 | 2008-03-05 | 豊田合成株式会社 | Method for producing gallium nitride compound semiconductor |
JP2001122693A (en) | 1999-10-22 | 2001-05-08 | Nec Corp | Ground substrate for crystal growth and method of producing substrate using the same |
JP3518455B2 (en) | 1999-12-15 | 2004-04-12 | 日亜化学工業株式会社 | Method for manufacturing nitride semiconductor substrate |
US6380108B1 (en) * | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
US6355497B1 (en) * | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
JP3988018B2 (en) | 2001-01-18 | 2007-10-10 | ソニー株式会社 | Crystal film, crystal substrate and semiconductor device |
-
2000
- 2000-04-28 JP JP2000130434A patent/JP2001313259A/en active Pending
-
2001
- 2001-03-02 AU AU2001236076A patent/AU2001236076A1/en not_active Abandoned
- 2001-03-02 WO PCT/JP2001/001663 patent/WO2001084608A1/en active Application Filing
- 2001-03-02 EP EP01908286A patent/EP1278233A1/en not_active Withdrawn
- 2001-03-02 US US10/258,546 patent/US6855620B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2001313259A (en) | 2001-11-09 |
US6855620B2 (en) | 2005-02-15 |
US20040048448A1 (en) | 2004-03-11 |
WO2001084608A1 (en) | 2001-11-08 |
EP1278233A1 (en) | 2003-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2001236076A1 (en) | Production method of iii nitride compound semiconductor substrate and semiconductor device | |
AU2001244643A1 (en) | Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element | |
AU2001241108A1 (en) | Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element | |
AU2001248803A1 (en) | Method of manufacturing group-iii nitride compound semiconductor device | |
AU2002354254A1 (en) | Method for making nitride semiconductor substrate and method for making nitride semiconductor device | |
AU2003207287A1 (en) | Nitride semiconductor device having support substrate and its manufacturing method | |
AU2001234169A1 (en) | Group iii nitride compound semiconductor and method for manufacturing the same | |
AU2001232341A1 (en) | Iii nitride compound semiconductor element and electrode forming method | |
EP1416529B8 (en) | Manufacturing method of semiconductor device | |
AU2001247389A1 (en) | Iii-v nitride substrate boule and method of making and using the same | |
AU2001259194A1 (en) | Improved pillar connections for semiconductor chips and method of manufacture | |
EP1350588A3 (en) | Method of manufacturing semiconductor device | |
AU2001277779A1 (en) | Semiconductor device and method of its manufacture | |
AU2001224025A1 (en) | Group iii nitride compound semiconductor light-emitting device and method for producing the same | |
AU2003214579A1 (en) | Semiconductor device and method of manufacturing same | |
AU2002348835A1 (en) | Method of manufacturing a semiconductor device | |
AU2002258739A1 (en) | Iii-v arsenide nitride semiconductor substrate | |
AU2002354108A1 (en) | Method of manufacturing semiconductor chip | |
AU2002228766A1 (en) | Semiconductor device and method of making same | |
AU2002213012A1 (en) | Method of manufacturing a semiconductor component and semiconductor component thereof | |
AU2003257718A1 (en) | Nitride semiconductor and fabrication method thereof | |
AU2002229106A1 (en) | Semiconductor tiling structure and method of formation | |
AU2003289473A1 (en) | Compound semiconductor epitaxial substrate and method for manufacturing same | |
AU2002348933A1 (en) | Heterojunction semiconductor device and method of manufacturing such device | |
AU2003252335A1 (en) | Method for manufacturing compound semiconductor wafer and compound semiconductor device |