CN103681795B - III nitride semiconductor structure and its manufacture method - Google Patents
III nitride semiconductor structure and its manufacture method Download PDFInfo
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- CN103681795B CN103681795B CN201310738594.1A CN201310738594A CN103681795B CN 103681795 B CN103681795 B CN 103681795B CN 201310738594 A CN201310738594 A CN 201310738594A CN 103681795 B CN103681795 B CN 103681795B
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 184
- 238000000034 method Methods 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 208000012868 Overgrowth Diseases 0.000 claims abstract description 88
- 230000006835 compression Effects 0.000 claims abstract description 44
- 238000007906 compression Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010410 layer Substances 0.000 claims description 466
- 229910002601 GaN Inorganic materials 0.000 claims description 67
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 34
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 33
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 23
- 229910052733 gallium Inorganic materials 0.000 claims description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 14
- 230000004927 fusion Effects 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 4
- UBMXAAKAFOKSPA-UHFFFAOYSA-N [N].[O].[Si] Chemical compound [N].[O].[Si] UBMXAAKAFOKSPA-UHFFFAOYSA-N 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 8
- 229910017083 AlN Inorganic materials 0.000 description 14
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 14
- 230000006872 improvement Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000001534 heteroepitaxy Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 230000026267 regulation of growth Effects 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
Abstract
The invention discloses a kind of III nitride semiconductor structure and its manufacture method, the structure includes：Substrate；The nucleating layer being located on substrate, nucleating layer is nitride, there is dislocation in nitride；The mask layer being located on nucleating layer, at least one mask layer window on mask layer, mask layer window run through whole mask layer；The outgrowth epitaxial lateral overgrowth layer for upwardly extending from mask layer window and extending laterally through mask layer；Dislocation density in outgrowth epitaxial lateral overgrowth layer is less than the dislocation density in the nitride nucleating layer of mask layer and mask layer beneath window.The present invention is by introducing compression in the epitaxial layer, so that the direction of growth of dislocation changes, it is re-introduced into the mask of thickness, the growth angle of constraint window region, when the depth-to-width ratio of window region exceedes critical value, the dislocation of bending all can be stopped by the side wall of mask, so as to realize the extremely low dislocation density in growth window.
Description
Technical field
The present invention relates to semiconductor electronic technical field, more particularly to a kind of III nitride semiconductor structure and its
Manufacture method.
Background technology
Because high-performance bulk gallium nitride that at present cannot also be commercial, gallium-nitride-based devices are typically all logical
The method for crossing hetero-epitaxy is grown in the foreign substrate of non-nitriding gallium, such as：Sapphire, carborundum and silicon etc..However, nitridation
There is larger lattice mismatch and coefficient of thermal expansion mismatch with these substrates in gallium, for example, gallium nitride has 16% with Sapphire Substrate
Lattice mismatch and -34% coefficient of thermal expansion mismatch, the mismatch had a strong impact on the quality of the gallium nitride material of hetero-epitaxy,
Cause, such as more than 108cm-2, such defect concentration can cause current-carrying
Son is revealed and non-radiative recombination center such as increases at the harmful effect, reduces the performance of gallium-nitride-based devices.
In order to improve the quality of the gallium nitride material of hetero-epitaxy, conventional method be introduce low temperature nitride gallium nucleating layer or
Person's low temperature nitride aluminium nucleating layer, as shown in Figure 1a, 1 is sapphire, carborundum or silicon substrate, and 2 is gallium nitride nucleating layer or nitrogen
Change aluminium nucleating layer, 4 is gallium nitride.Using the method, Ya companies successfully have developed the highlighted of first gallium nitride base in the world
Degree light emitting diode.But still may proceed to grow iff the dislocation for using low temperature nucleation layer, mismatch introducing, gallium nitride material
Defect concentration still very big.
In order to further improve the quality of hetero-epitaxy gallium nitride material, another kind of very important method is epitaxial lateral overgrowth
Method, as shown in Figure 1 b, 1 is sapphire or carborundum or silicon substrate, and 2 are gallium nitride nucleating layer or aln nucleation layer, 41 Hes
42 is gallium nitride, and 5 is mask layer, and as shown in Figure 1 b, on mask layer 5, the part of two epitaxial lateral overgrowths does not all have to its fusion
Dislocation is produced, and is window area in its vertical-growth region, and dislocation still may proceed to grow.The method of this epitaxial lateral overgrowth, resistance
Stop the top that partial dislocation reaches epitaxial layer, reduce the dislocation density of Mask portion, but the dislocation density of window area
Still very big, in order to obtain high-quality gallium nitride epitaxial materialses, the requirement to window and the ratio of Mask portion is also very severe
Carve.
In order to reduce the dislocation density of window area, another kind of improved method is controllable facet epitaxial lateral overgrowth
(referred to as " FACLEO ") method.As illustrated in figure 1 c, 1 is sapphire or carborundum or silicon substrate, and 2 is gallium nitride nucleating layer or nitridation
Aluminium nucleating layer, 41 and 42 is gallium nitride, and 5 is mask layer, and the method carries out selectivity by changing growth conditions above window
When growth, (11-22) face is generated, now, for trapezoidal, even triangle, as illustrated in figure 1 c, in this life for cross sectional shape
Under elongate member, horizontal direction can be changed into from vertical direction in the direction of dislocation, or be close to horizontal direction.This FACLEO methods, with
Lateral epitaxial method is compared, and the requirement to window and the ratio of Mask portion is not very harsh, and the dislocation for reducing window area is close
Degree, but still there is partial dislocation to reach in epitaxial layer of gallium nitride.
Therefore, for above-mentioned technical problem and improved method, it is necessary to provide a kind of III nitride semiconductor structure and
Its manufacture method.
Content of the invention
In view of this, the invention provides a kind of mechanism of new raising nitride quality, rationally utilizes not homepitaxy
Compression between layer material, by introducing compression so that the direction of growth of dislocation changes, then draws in epitaxial film materials
Enter the mask of thickness, constrain the growth angle of window region, when the depth-to-width ratio of window region exceedes critical angle, the position of bending
Wrong meeting is all stopped by the side wall of mask, without entering in nitride epitaxial layer, so as to realize the extremely low position in growth window
Dislocation density.
As shown in Fig. 21 is sapphire, carborundum or silicon substrate, 2 is aln nucleation layer, and 3 is gallium nitride layer, and 41 is nitrogen
Change gallium layer, 42 for outgrowth epitaxial lateral overgrowth gallium nitride layer, 5 is mask layer, and gallium nitride layer 3 is introduced by aln nucleation layer 2
Compression, gallium nitride layer 41 is subject to the compression that gallium nitride layer 3 is introduced, the dislocation that substrate and aluminum nitride buffer layer 2 are produced to exist
After the compression for being subject to epitaxial layer to introduce, the direction of growth of dislocation there occurs bending, is re-introduced into the mask of thickness, constrains window region
Growth angle, when window region depth-to-width ratio exceed critical angle when, the dislocation of bending can all by mask layer and mask
The side wall of layer stops that the 42 sustainable growth of outgrowth epitaxial lateral overgrowth gallium nitride layer, each lateral growth are generated complete along mutually fusion
Planar structure epitaxial layer of gallium nitride, so as to grow the gallium nitride layer 42 of extremely low dislocation density.
To achieve these goals, technical scheme provided in an embodiment of the present invention is as follows：
A kind of III nitride semiconductor structure, the III nitride semiconductor structure include：
Substrate；
The nucleating layer being located on the substrate, the nucleating layer are nitride, there is dislocation in the nitride；
The mask layer being located on the nucleating layer, at least one mask layer window, the mask layer on the mask layer
Window runs through whole mask layer；
The outgrowth epitaxial lateral overgrowth layer for upwardly extending from the mask layer window and extending laterally through the mask layer, mistake
Growth epitaxial lateral overgrowth layer is subject to the compression that understructure applies in higher temperature growth processes；
In the presence of compression, direction changes dislocation in the outgrowth epitaxial lateral overgrowth layer grown from mask window
Become, so as to be stopped by mask layer；
Dislocation density in the outgrowth epitaxial lateral overgrowth layer less than mask layer and mask layer beneath window nitride into
Dislocation density in stratum nucleare；
The outgrowth epitaxial lateral overgrowth layer choosing from one or more group III-nitride, the outgrowth epitaxial lateral overgrowth layer
Along mutually fusion, outgrowth epitaxial lateral overgrowth layer is complete planar structure to each lateral growth.
As a further improvement on the present invention, the III nitride semiconductor structure also includes：It is located at the nucleating layer
The compression introduced by the nucleating layer with the first nitride layer of mask interlayer, first nitride layer.
As a further improvement on the present invention, the III nitride semiconductor structure also includes：It is located at the nucleating layer
And first between nitride layer for introducing the intermediate layer of compression, the intermediate layer is aluminiferous nitride.
As a further improvement on the present invention, the III nitride semiconductor structure also includes：It is located at first nitrogen
The intermediate layer for introducing compression in compound layer, the intermediate layer are aluminiferous nitride；
The second nitride layer being located on the intermediate layer, second nitride layer are subject to the pressure that intermediate layer introduces to answer
Power.
As a further improvement on the present invention, the III nitride semiconductor structure also includes：It is located at first nitrogen
Compound layer and the insert layer of middle interlayer, the insert layer is aln inserting layer.
As a further improvement on the present invention, the mask layer is selected from silicon nitride, nitrogen-oxygen-silicon or silica.
As a further improvement on the present invention, the substrate is selected from sapphire, carborundum, silicon, lithium niobate, GaAs or oxygen
Change zinc and the gallium nitride template grown on sapphire, carborundum, silicon, lithium niobate, GaAs and zinc oxide.
As a further improvement on the present invention, also include multilayer between aluminiferous nitride intermediate layer and the first nitride layer
Structure, the sandwich construction be aluminum gallium nitride transition zone or aluminium nitrogen/gallium nitrogen superlattices or aluminium nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/
Aluminium nitrogen superlattices or aluminum gallium nitride/gallium nitrogen superlattices or aluminum gallium nitride/aluminum gallium nitride superlattices.
Correspondingly, a kind of manufacture method of III nitride semiconductor structure, the method comprising the steps of：
S1, one substrate of offer；
S2, over the substrate growth nucleating layer, the nucleating layer is nitride, there is dislocation in the nitride；
S3, on the nucleating layer deposition mask layer；
S4, on the mask layer by being lithographically formed at least one mask layer window, the mask layer window is through whole
Individual mask layer；
S5, outgrowth epitaxial lateral overgrowth layer is grown in the mask layer window, the outgrowth epitaxial lateral overgrowth layer is from mask
Layer window is upwardly extended and is extended laterally through mask layer, under the outgrowth epitaxial lateral overgrowth layer is subject in higher temperature growth processes
The compression that Rotating fields apply, effect of the dislocation in the outgrowth epitaxial lateral overgrowth layer grown from mask window in compression
Under, direction changes, so as to be stopped by mask layer；Dislocation density in the outgrowth epitaxial lateral overgrowth layer less than mask layer and
Dislocation density in the nitride nucleating layer of mask layer beneath window, the outgrowth epitaxial lateral overgrowth layer choosing is from one or more
Group III-nitride, along mutually fusion, outgrowth epitaxial lateral overgrowth layer is complete to each lateral growth of the outgrowth epitaxial lateral overgrowth layer
Planar structure.
As a further improvement on the present invention, also include between step S2 and S3：
The first nitride layer is deposited on the nucleating layer, and first nitride layer is pressed by the nucleating layer introducing
Stress.
As a further improvement on the present invention, also include before " depositing the first nitride layer on the nucleating layer "：
Grow on the nucleating layer for introducing the intermediate layer of compression, the intermediate layer is aluminiferous nitride.As
Further improvement of the present invention, also includes after " depositing the first nitride layer on the nucleating layer "：In first nitride
Grow on layer for introducing the intermediate layer of compression, the intermediate layer is aluminiferous nitride；
The second nitride layer is deposited on the intermediate layer, and second nitride layer is subject to the pressure that intermediate layer introduces to answer
Power.
As a further improvement on the present invention, " grow on first nitride layer for introducing the centre of compression
Also include before layer "：
High growth temperature insert layer on first nitride layer, the insert layer are aln inserting layer.The present invention's
Beneficial effect is：III nitride semiconductor structure of the present invention and its manufacture method in epitaxial layer growth process, by outside
Prolong introducing compression in layer so that the direction of growth of dislocation changes, be re-introduced into the mask of thickness, constrain the growth angle of window region
Degree.When the depth-to-width ratio of window region exceedes critical angle, the dislocation of bending all can be stopped by the side wall of mask, so as to reality
Extremely low dislocation density in existing growth window, grows high-quality group III-nitride.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Can be with according to these other accompanying drawings of accompanying drawings acquisition.
Fig. 1 a, 1b, 1c are the schematic diagram of gallium nitride-based semiconductor structure in prior art；
Fig. 2 is the schematic diagram for applying gallium nitride-based semiconductor structure of the present invention；
Fig. 3 a-3e are the technological process of III nitride semiconductor structure making process in first embodiment of the invention
Figure, wherein Fig. 3 e are the schematic diagram of III nitride semiconductor structure in the embodiment；
Fig. 4 a-4e are the technological process of III nitride semiconductor structure making process in second embodiment of the invention
Figure, wherein Fig. 4 e are the schematic diagram of III nitride semiconductor structure in the embodiment；
Fig. 5 a-5c are the technological process of III nitride semiconductor structure making process in third embodiment of the invention
Figure, wherein Fig. 5 c are the schematic diagram of III nitride semiconductor structure in the embodiment；
Fig. 6 a-6c are the technological process of III nitride semiconductor structure making process in four embodiment of the invention
Figure, wherein Fig. 6 c are the schematic diagram of III nitride semiconductor structure in the embodiment.
Specific embodiment
Describe the present invention below with reference to specific embodiment shown in the drawings.But these embodiments are simultaneously
The present invention is not limited, structure that one of ordinary skill in the art is made according to these embodiments, method or functionally
Conversion is all contained in protection scope of the present invention.
Additionally, the label or sign for repeating may be used in various embodiments.These repetitions are only for simply clear
The ground narration present invention, does not represent.
The embodiment of the invention discloses a kind of III nitride semiconductor structure, including：
Substrate；
The nucleating layer being located on substrate, nucleating layer is nitride, preferably from aluminium nitride or aluminum gallium nitride, deposits in nitride
In dislocation；
The mask layer being located on nucleating layer, at least one mask layer window on mask layer, mask layer window is through whole
Mask layer；
The outgrowth epitaxial lateral overgrowth layer for upwardly extending from mask layer window and extending laterally through mask layer, outgrowth are lateral
Epitaxial layer is subject to the compression that understructure applies in higher temperature growth processes；
In the presence of compression, direction changes dislocation in the outgrowth epitaxial lateral overgrowth layer grown from mask window
Become, so as to be stopped by mask layer；
Dislocation density in outgrowth epitaxial lateral overgrowth layer is less than mask layer and the nitride nucleating layer of mask layer beneath window
In dislocation density；
Outgrowth epitaxial lateral overgrowth layer choosing is from one or more group III-nitride, each lateral life of outgrowth epitaxial lateral overgrowth layer
The mutually fusion of long edge, outgrowth epitaxial lateral overgrowth layer is complete planar structure.
Correspondingly, the invention also discloses a kind of manufacture method of III nitride semiconductor structure, including following step
Suddenly：
S1, one substrate of offer；
S2, in Grown nucleating layer, nucleating layer is nitride, it is preferable that from aluminium nitride or aluminum gallium nitride, nitride
In there is dislocation；
S3, on nucleating layer deposition mask layer；
S4, on mask layer by being lithographically formed at least one mask layer window, mask layer window runs through whole mask layer；
S5, grow outgrowth epitaxial lateral overgrowth layer in the mask layer window, outgrowth epitaxial lateral overgrowth layer from mask layer window to
On extend across mask layer and extend laterally, outgrowth epitaxial lateral overgrowth layer is subject to understructure to apply in higher temperature growth processes
Compression, in the presence of compression, direction changes the dislocation in the outgrowth epitaxial lateral overgrowth layer grown from mask window
Become, so as to be stopped by mask layer；Dislocation density in outgrowth epitaxial lateral overgrowth layer is less than mask layer and mask layer beneath window
Dislocation density in nitride nucleating layer；, from one or more group III-nitride, outgrowth is lateral for outgrowth epitaxial lateral overgrowth layer choosing
Along mutually fusion, outgrowth epitaxial lateral overgrowth layer is complete planar structure to each lateral growth of epitaxial layer.
Below in conjunction with a variety of embodiments, the invention will be further described.
Fig. 3 is referred to, Fig. 3 a-3e are III nitride semiconductor structure and its systems in first embodiment of the invention
Make the process chart of method.
The III nitride semiconductor structure as shown in Figure 3 e, including：
Substrate 1；
Aluminium nitride or aluminum gallium nitride nucleating layer 2 on substrate；
The first nitride layer 3 on aluminium nitride or aluminum gallium nitride nucleating layer 2；
Mask layer 5 on the first nitride layer 3, at least one mask layer window on mask layer, the mask layer window
Run through whole mask layer and expose the first nitride layer 3, the first nitride layer 3 is subject to aluminium nitride or aluminum gallium nitride nucleating layer 2 to draw
The compression for entering；
Outgrowth epitaxial lateral overgrowth layer 4, the outgrowth epitaxial lateral overgrowth layer 4 are upwardly extended from mask layer window and pass through mask side
To extension, the outgrowth epitaxial lateral overgrowth layer 4 is selected from any one or more of group III-nitride, in outgrowth epitaxial lateral overgrowth layer 4
Dislocation density less than the dislocation density in the nucleating layer of mask layer and mask layer beneath window.
Further, mask layer 5 is selected from silicon nitride, silica nitrogen and silica.
Further, substrate 1 is selected from sapphire, carborundum, silicon, lithium niobate, GaAs or zinc oxide and blue precious
The gallium nitride template (template) grown on stone, carborundum, silicon, lithium niobate, GaAs and zinc oxide.
The first nitride layer 3 in present embodiment is optional, can not also grow first in other embodiments
Nitride layer 3 and direct deposition mask layer 5 on nucleating layer 2.
Fig. 3 a-3e are the technique stream of III nitride semiconductor structure making process in first embodiment of the invention
Cheng Tu, including step：
One substrate 1 is provided；
In Grown aluminium nitride or aluminum gallium nitride nucleating layer 2, as shown in Figure 3 a；
Growth regulation mononitride layer 3 on aluminium nitride or aluminum gallium nitride nucleating layer 2, to introduce enough compression, drives position
Wrong bending, as shown in Figure 3 b, the first nitride layer 3 is subject to the compression that aluminium nitride or aluminum gallium nitride nucleating layer 2 are introduced；
Deposition mask layer 5 on the first nitride layer 3, as shown in Figure 3 c；
By being lithographically formed at least one mask layer window on mask layer 5, the mask layer window runs through whole mask layer
And the first nitride layer 3 is exposed, as shown in Figure 3 d；
Outgrowth epitaxial lateral overgrowth layer 4 is grown in mask layer window, the outgrowth epitaxial lateral overgrowth layer 4 is from mask layer window
Upwardly extend and extend laterally through mask, the outgrowth epitaxial lateral overgrowth layer is selected from any one or more of group III-nitride,
Dislocation density in outgrowth epitaxial lateral overgrowth layer 4 is less than the dislocation density in the nucleating layer of mask layer and mask layer beneath window,
The 4 sustainable growth of outgrowth epitaxial lateral overgrowth layer, each lateral growth generate complete planar structure, such as Fig. 3 e institutes along mutually fusion
Show.
Fig. 4 is referred to, Fig. 4 a-4e are III nitride semiconductor structure and its system in second embodiment of the present invention
Make the process chart of method.
The III nitride semiconductor structure as shown in fig 4e, including：
Substrate 1；
Aluminium nitride or aluminum gallium nitride nucleating layer 2 on substrate；
The aluminiferous nitride intermediate layer 6 of the introducing compression on aluminium nitride or aluminum gallium nitride nucleating layer 2；
The first nitride layer 3 on aluminiferous nitride intermediate layer 6；
Mask layer 5 on the first nitride layer 3, at least one mask layer window on mask layer 5, the mask layer window
Run through whole mask layer and expose the first nitride layer 3；
Outgrowth epitaxial lateral overgrowth layer 4, outgrowth epitaxial lateral overgrowth layer 4 are upwardly extended from mask layer window and pass through mask lateral
Extend, outgrowth epitaxial lateral overgrowth layer 4 is selected from any one or more of group III-nitride, the position in outgrowth epitaxial lateral overgrowth layer 4
Dislocation density is less than the dislocation density in the nucleating layer of mask layer and mask layer beneath window.
Further, mask layer 5 is selected from silicon nitride, silica nitrogen and silica.
Further, substrate 1 is selected from sapphire, carborundum, silicon, lithium niobate, GaAs or zinc oxide and blue precious
The gallium nitride template (template) grown on stone, carborundum, silicon, lithium niobate, GaAs and zinc oxide.
The first nitride layer 3 in present embodiment is optional, can not also grow first in other embodiments
Nitride layer 3 and direct deposition mask layer 5 on aluminiferous nitride intermediate layer 6.
Further, sandwich construction may be incorporated between aluminiferous nitride intermediate layer 6 and the first nitride layer 3, such as
Aluminum gallium nitride transition zone or aluminium nitrogen/gallium nitrogen superlattices or aluminium nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/aluminium nitrogen superlattices or gallium aluminium
Nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/aluminum gallium nitride superlattices etc..
Fig. 4 a-4e are the technique stream of III nitride semiconductor structure making process in second embodiment of the present invention
Cheng Tu, including step：
One substrate 1 is provided；
In Grown aluminium nitride or aluminum gallium nitride nucleating layer 2, as shown in fig. 4 a；
Growth aluminiferous nitride intermediate layer 6 on aluminium nitride or aluminum gallium nitride nucleating layer 2, to introduce enough compression, drives
Dynamic dislocation bending, deposits the first nitride layer 3, as shown in Figure 4 b on aluminiferous nitride intermediate layer 3；
Deposition mask layer 5 on the first nitride layer 3, as illustrated in fig. 4 c；
By being lithographically formed at least one mask layer window on mask layer 5, the mask layer window runs through whole mask layer
And the first nitride layer 3 is exposed, as shown in figure 4d；
Grow outgrowth epitaxial lateral overgrowth layer 4 in the mask layer window, outgrowth epitaxial lateral overgrowth layer 4 from mask layer window to
On extend across mask and extend laterally, outgrowth epitaxial lateral overgrowth layer 4 is selected from any one or more of group III-nitride, mistake
Dislocation density in growth epitaxial lateral overgrowth layer 4 is less than the dislocation density in the nucleating layer of mask layer and mask layer beneath window, mistake
The sustainable growth of growth epitaxial lateral overgrowth layer, each lateral growth generate complete planar structure, as shown in fig 4e along mutually fusion.
Fig. 5 is referred to, Fig. 5 a-5c are III nitride semiconductor structure and its system in third embodiment of the present invention
Make the process chart of method.
The III nitride semiconductor structure as shown in Figure 5 c, including：
Substrate 1；
Nitride nucleating layer 2 on substrate 1；
The first nitride layer 3 on nitride nucleating layer 2；
Aluminiferous nitride intermediate layer 6 on the first nitride layer 3；
The second nitride layer 7 on aluminiferous nitride intermediate layer 6, the second nitride layer 7 are subject in the middle of aluminiferous nitride
The compression that layer 6 is introduced；
Mask layer 5 on the second nitride layer 7, at least one mask layer window on mask layer, the mask layer window
Run through whole mask layer and expose the second nitride layer 7；
Outgrowth epitaxial lateral overgrowth layer 4, outgrowth epitaxial lateral overgrowth layer 4 are upwardly extended from mask layer window and pass through mask lateral
Extend, outgrowth epitaxial lateral overgrowth layer 4 is selected from any one or more of group III-nitride, the position in outgrowth epitaxial lateral overgrowth layer 4
Dislocation density is less than the dislocation density in the nucleating layer of mask layer and mask layer beneath window；
Each lateral growth of outgrowth epitaxial lateral overgrowth layer 4 generates complete planar structure along mutually fusion.
Further, mask layer 5 is selected from silicon nitride, silica nitrogen and silica.
Further, substrate 1 is selected from sapphire, carborundum, silicon, lithium niobate, GaAs or zinc oxide and blue precious
The gallium nitride template (template) grown on stone, carborundum, silicon, lithium niobate, GaAs and zinc oxide.
The first nitride layer 3 in present embodiment is optional.
Further, sandwich construction may be incorporated between aluminiferous nitride intermediate layer 6 and the first nitride layer 3, such as
Aluminum gallium nitride transition zone or aluminium nitrogen/gallium nitrogen superlattices or aluminium nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/aluminium nitrogen superlattices or gallium aluminium
Nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/aluminum gallium nitride superlattices etc..
Fig. 5 a-5c are the technique stream of III nitride semiconductor structure making process in third embodiment of the present invention
Cheng Tu, including step：
One substrate 1 is provided；
In Grown nitride nucleating layer 2,2 preferred aluminium nitride of nucleating layer；
Growth regulation mononitride layer 3 on nitride nucleating layer 2, as shown in Figure 5 a；
Growth aluminiferous nitride intermediate layer 6 on the first nitride layer 3；
On aluminiferous nitride intermediate layer 6, growth introduces the second nitride layer 7 of compression, and the second nitride layer 7 is received
The compression that aluminiferous nitride intermediate layer 6 introduces, as shown in Figure 5 b；
Deposited silicon nitride or silicon dioxide mask layer 5 on the second nitride layer 7；
At least one mask layer window is formed on mask layer 5, and the mask layer window through whole mask layer and exposes
Gallium nitride layer 3；
Outgrowth epitaxial lateral overgrowth layer 4 is grown in mask layer window, the outgrowth epitaxial lateral overgrowth layer 4 is from mask layer window
Upwardly extend and extend laterally through mask, the outgrowth epitaxial lateral overgrowth layer 4 is selected from any one or more of III nitridation
Thing, the dislocation density in outgrowth epitaxial lateral overgrowth layer 4 are close less than the dislocation in the nucleating layer of mask layer and mask layer beneath window
Degree, the sustainable growth of outgrowth epitaxial lateral overgrowth layer, each lateral growth generate complete planar structure, such as Fig. 5 c along mutually fusion
Shown.
Fig. 6 is referred to, Fig. 6 a-6c are III nitride semiconductor structure and its system in the 4th embodiment of the invention
Make the process chart of method.
The III nitride semiconductor structure as fig. 6 c, including：
Substrate 1；
Nitride nucleating layer 2 on substrate 1；
The first nitride layer 3 on nitride nucleating layer 2；
Aln inserting layer 8 on the first nitride layer 3；
The aluminiferous nitride intermediate layer 6 of the introducing compression on aln inserting layer 8；
The second nitride layer 7 on aluminiferous nitride intermediate layer 6；
Mask layer 5 on the second nitride layer 7, at least one mask layer window on mask layer 5, the mask layer window
Run through whole mask layer and expose the second nitride layer 7；
Outgrowth epitaxial lateral overgrowth layer 4, outgrowth epitaxial lateral overgrowth layer 4 are upwardly extended from mask layer window and pass through mask lateral
Extend, outgrowth epitaxial lateral overgrowth layer 4 is selected from any one or more of group III-nitride, the position in outgrowth epitaxial lateral overgrowth layer 4
Dislocation density less than the dislocation density in the nucleating layer of mask layer and mask layer beneath window, outgrowth epitaxial lateral overgrowth layer each lateral
Growth generates complete planar structure along mutually fusion.
Further, mask layer 5 is selected from silicon nitride, silica nitrogen and silica.
Further, substrate 1 is selected from sapphire, carborundum, silicon, lithium niobate, GaAs or zinc oxide and blue precious
The gallium nitride template (template) grown on stone, carborundum, silicon, lithium niobate, GaAs and zinc oxide.
The first nitride layer 3 in present embodiment is optional.
Further, sandwich construction may be incorporated between aluminiferous nitride intermediate layer 6 and the first nitride layer 3, such as
Aluminum gallium nitride transition zone or aluminium nitrogen/gallium nitrogen superlattices or aluminium nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/aluminium nitrogen superlattices or gallium aluminium
Nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/aluminum gallium nitride superlattices etc..
Fig. 6 a-6c are the technique stream of III nitride semiconductor structure making process in the 4th embodiment of the invention
Cheng Tu, including step：
One substrate 1 is provided；
In Grown nitride nucleating layer 2,2 preferred aluminium nitride of nucleating layer；
Growth regulation mononitride layer 3 on nitride nucleating layer 2, as shown in Figure 6 a；
High growth temperature aln inserting layer 8 on the first nitride layer 3；
On aln inserting layer 8, growth introduces the aluminiferous nitride intermediate layer 6 of compression, in aluminiferous nitride intermediate layer
Growth regulation second nitride layer 7 on 6, as shown in Figure 6 b；
Deposited silicon nitride or silicon dioxide mask layer 5 on the second nitride layer 7；
At least one mask layer window is formed on mask layer 5, and the mask layer window through whole mask layer and exposes
Second nitride layer 7；
Outgrowth epitaxial lateral overgrowth layer 4 is grown in mask layer window, extend across mask from mask layer window upwards
Extend laterally, outgrowth epitaxial lateral overgrowth layer 4 is selected from any one or more of group III-nitride, in outgrowth epitaxial lateral overgrowth layer 4
Dislocation density less than the dislocation density in the nucleating layer of mask layer and mask layer beneath window, outgrowth epitaxial lateral overgrowth layer 4 can
Continued propagation, each lateral growth generate complete planar structure as fig. 6 c along mutually fusion.
By embodiment of above as can be seen that the present invention provide III nitride semiconductor structure and its manufacture method,
In epitaxial layer growth process, by introducing compression in the epitaxial layer so that the direction of growth of dislocation changes, and is re-introduced into
Thick mask, constrains the growth angle of window region.When the depth-to-width ratio of window region exceedes critical angle, the dislocation meeting of bending
All stopped by the side wall of mask, so as to realize the extremely low dislocation density in growth window, grow high-quality III nitridation
Thing.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of spirit or essential attributes without departing substantially from the present invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than described above is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as and limit involved claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, not each embodiment is only wrapped
Contain an independent technical scheme, this narrating mode of specification is only that those skilled in the art should for clarity
Using specification as an entirety, the technical scheme in each embodiment can also form those skilled in the art through appropriately combined
Understandable other embodiment.
Claims (13)
1. a kind of III nitride semiconductor structure, it is characterised in that the III nitride semiconductor structure includes：
Substrate；
The nucleating layer being located on the substrate, the nucleating layer are nitride, there is dislocation in the nitride；
The mask layer being located on the nucleating layer, at least one mask layer window on the mask layer, the mask layer window
Run through whole mask layer；
The outgrowth epitaxial lateral overgrowth layer for upwardly extending from the mask layer window and extending laterally through the mask layer, outgrowth
Epitaxial lateral overgrowth layer is subject to the compression that understructure applies in higher temperature growth processes；
In the presence of compression, direction changes dislocation in the outgrowth epitaxial lateral overgrowth layer grown from mask window,
So as to be stopped by mask layer；
Dislocation density in the outgrowth epitaxial lateral overgrowth layer is less than mask layer and the nitride nucleating layer of mask layer beneath window
In dislocation density；
The outgrowth epitaxial lateral overgrowth layer choosing is from one or more group III-nitride, each side of the outgrowth epitaxial lateral overgrowth layer
To growth along mutually fusion, outgrowth epitaxial lateral overgrowth layer is complete planar structure.
2. III nitride semiconductor structure according to claim 1, it is characterised in that the group III-nitride is partly led
Body structure also includes：
The first nitride layer of the nucleating layer and mask interlayer is located at, first nitride layer is introduced by the nucleating layer
Compression.
3. III nitride semiconductor structure according to claim 2, it is characterised in that the group III-nitride is partly led
Body structure also includes：
Being located at is used for the intermediate layer for introducing compression between the nucleating layer and the first nitride layer, the intermediate layer is to nitrogenize containing aluminium
Thing.
4. III nitride semiconductor structure according to claim 2, it is characterised in that the group III-nitride is partly led
Body structure also includes：
The intermediate layer for introducing compression being located on first nitride layer, the intermediate layer are aluminiferous nitride；
The second nitride layer being located on the intermediate layer, second nitride layer are subject to the compression that intermediate layer introduces.
5. III nitride semiconductor structure according to claim 4, it is characterised in that the group III-nitride is partly led
Body structure also includes：
The insert layer of first nitride layer and middle interlayer is located at, the insert layer is aln inserting layer.
6. the III nitride semiconductor structure according to any one of claim 2,3,4,5, it is characterised in that described
Mask layer is selected from silicon nitride, nitrogen-oxygen-silicon or silica.
7. the III nitride semiconductor structure according to any one of claim 2,3,4,5, it is characterised in that described
Substrate selected from sapphire, carborundum, silicon, lithium niobate, GaAs or zinc oxide and sapphire, carborundum, silicon, lithium niobate,
The gallium nitride template grown on GaAs and zinc oxide.
8. the III nitride semiconductor structure according to any one of claim 3,4,5, it is characterised in that containing aluminium
Also include sandwich construction between nitride intermediate layer and the first nitride layer, the sandwich construction is aluminum gallium nitride transition zone or aluminium
Nitrogen/gallium nitrogen superlattices or aluminium nitrogen/gallium nitrogen superlattices or aluminum gallium nitride/aluminium nitrogen superlattices or aluminum gallium nitride/gallium nitrogen superlattices or aluminium
Gallium nitrogen/aluminum gallium nitride superlattices.
9. a kind of manufacture method of III nitride semiconductor structure as claimed in claim 1, it is characterised in that the side
Method is comprised the following steps：
S1, one substrate of offer；
S2, over the substrate growth nucleating layer, the nucleating layer is nitride, there is dislocation in the nitride；
S3, on the nucleating layer deposition mask layer；
S4, on the mask layer by being lithographically formed at least one mask layer window, the mask layer window is through entirely covering
Film layer；
S5, outgrowth epitaxial lateral overgrowth layer is grown in the mask layer window, the outgrowth epitaxial lateral overgrowth layer is from mask layer window
Mouth is upwardly extended and is extended laterally through mask layer, and the outgrowth epitaxial lateral overgrowth layer is tied by lower floor in higher temperature growth processes
The compression that structure applies, the dislocation in the outgrowth epitaxial lateral overgrowth layer grown from mask window are in the presence of compression, square
To changing, so as to be stopped by mask layer；Dislocation density in the outgrowth epitaxial lateral overgrowth layer is less than mask layer and mask
Dislocation density in the nitride nucleating layer of layer beneath window, the outgrowth epitaxial lateral overgrowth layer choosing is from one or more III
Nitride, along mutually fusion, outgrowth epitaxial lateral overgrowth layer is complete putting down to each lateral growth of the outgrowth epitaxial lateral overgrowth layer
Face structure.
10. the manufacture method of III nitride semiconductor structure according to claim 9, it is characterised in that the step
Also include between S2 and S3：
The first nitride layer is deposited on the nucleating layer, and first nitride layer is subject to the pressure that the nucleating layer is introduced to answer
Power.
The manufacture method of 11. III nitride semiconductor structures according to claim 10, it is characterised in that " described
The first nitride layer is deposited on nucleating layer " also include before：
Grow on the nucleating layer for introducing the intermediate layer of compression, the intermediate layer is aluminiferous nitride.
The manufacture method of 12. III nitride semiconductor structures according to claim 10, it is characterised in that " described
Deposit the first nitride layer on nucleating layer " after also include：
Grow on first nitride layer for introducing the intermediate layer of compression, the intermediate layer is aluminiferous nitride；
The second nitride layer is deposited on the intermediate layer, and second nitride layer is subject to the compression that intermediate layer introduces.
The manufacture method of 13. III nitride semiconductor structures according to claim 12, it is characterised in that " described
Grow on first nitride layer for introducing the intermediate layer of compression " before also include：
High growth temperature insert layer on first nitride layer, the insert layer are aln inserting layer.
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