KR20020010583A - 반도체 기재와 그 제조 방법 및 반도체 결정의 제조 방법 - Google Patents
반도체 기재와 그 제조 방법 및 반도체 결정의 제조 방법 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 264
- 239000004065 semiconductor Substances 0.000 title claims abstract description 225
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 200
- 238000000034 method Methods 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims description 21
- 238000001947 vapour-phase growth Methods 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 50
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 30
- 229910052594 sapphire Inorganic materials 0.000 description 25
- 239000010980 sapphire Substances 0.000 description 25
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 230000000694 effects Effects 0.000 description 17
- 229910021529 ammonia Inorganic materials 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000002994 raw material Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02617—Deposition types
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Abstract
Description
샘플 | 전위 밀도 | 캐리어 밀도 | XRC 의 FWHM |
실시예 샘플 | 4 ×107cm-2 | 1 ×1016cm-3 | 170 sec |
종래 ELO 샘플 | 4 ×107cm-2 | 5 ×1017cm-3 | 200-400 sec |
통상 GaN | 2 ×109cm-2 | 1 ×1016cm-3 | 220 sec |
샘플 | 출력(20 mA) | -10 V 인가시의누설 전류 |
실시예 샘플 | 1.7 mW | 10 nA |
종래 ELO 샘플 | 1.5 mW | 50 nA |
통상 GaN | 0.9 mW | 1 ㎂ |
Claims (21)
- 기판과 이 기판 상에 기상 성장된 반도체 결정으로 이루어지는 반도체 기재로서, 상기 기판의 결정 성장면이 요철면으로 되고, 상기 반도체 결정은 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장된 것을 특징으로 하는 반도체 기재.
- 제1항에 있어서, 상기 반도체 결정이 InGaAlN인 것을 특징으로 하는 반도체 기재.
- 제1항에 있어서, 상기 기판의 결정 성장면의 볼록부가 평행한 스트라이프 형상으로 이루어지는 볼록부인 것을 특징으로 하는 반도체 기재.
- 제3항에 있어서, 상기 반도체 결정이 InGaAlN이며, 스트라이프의 길이 방향이 상기 InGaAlN 결정의 (1-100)면과 평행한 것을 특징으로 하는 반도체 기재.
- 제1항에 있어서, 기판과 이 기판 상에 기상 성장된 반도체 결정으로 이루어지는 반도체 기재로서, 상기 기판의 결정 성장면이 요철면으로 되고, 상기 반도체 결정은 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장된 반도체 기재에 있어서, 상기 요철면이 성장된 반도체 결정으로 덮여 있고, 이 반도체 결정의 층과상기 요철면에 있어서의 오목부와의 사이에는 공동부가 형성되어 있는 것을 특징으로 하는 반도체 기재.
- 제1항에 있어서, 상기 기판의 요철면의 오목부가 그 층으로부터는 실질적으로 결정 성장할 수 없는 마스크로 덮혀 있고, 상기 반도체 결정이 상기 기판의 요철면의 볼록부의 상측부에서만 결정 성장한 것임을 특징으로 하는 반도체 기재.
- 기판의 결정 성장면을 요철면으로 하고, 기상 성장법에 의해 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장됨으로써 형성된 제1 반도체 결정의 층과, 이 제1 반도체 결정의 층의 표면을 요철면으로 하고, 마찬가지로 그 볼록부의 상측부에서만 결정 성장됨으로써 형성된 제2 반도체 결정의 층으로 이루어지는 것을 특징으로 하는 반도체 기재.
- 제7항에 있어서, 상기 기판의 요철면의 오목부가 그 층으로부터는 실질적으로 결정 성장할 없는 마스크로 덮혀 있고, 상기 제1 반도체 결정의 층이 상기 기판의 요철면의 볼록부의 상측부에서만 결정 성장한 것이며, 상기 제1 반도체 결정의 층의 요철면의 오목부가 그 층으로부터는 실질적으로 결정 성장할 수 없는 마스크로 덮혀 있고, 상기 제2 반도체 결정이 상기 제1 반도체 결정의 층의 요철면의 볼록부의 상측부에서만 결정 성장한 것임을 특징으로 하는 반도체 기재.
- 제7항에 기재한 반도체 기재에 있어서의 제2 반도체 결정의 층의 표면을 요철면으로 하고, 그 위에 마찬가지로 기상 성장법에 의해 형성된 제3 반도체 결정의 층 내지는 같은 공정을 반복함으로써 다중적으로 형성된 복수의 반도체 결정의 층을 갖는 것을 특징으로 하는 반도체 기재.
- 제8항에 기재한 반도체 기재에 있어서의 제2 반도체 결정의 층의 표면을 요철면으로 하고, 오목부를 그 층으로부터는 실질적으로 결정 성장할 수 없는 마스크로 덮고, 그 위에 마찬가지로 기상 성장법에 의해 형성된 제3 반도체 결정의 층 내지는 같은 공정을 반복함으로써 다중적으로 형성된 복수의 반도체 결정의 층을 갖는 것을 특징으로 하는 반도체 기재.
- 기판 상에 반도체 결정을 기상 성장시킴에 있어, 미리 기판 표면에 요철면 가공을 실시하고, 이어서 상기 기판에 대하여 원료 가스를 공급하여 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장되는 반도체 결정으로 상기 기판의 요철면을 덮는 것을 특징으로 하는 반도체 기재의 제조 방법.
- 제11항에 있어서, 상기 기판의 요철면의 오목부를 그 층으로부터는 실질적으로 결정 성장할 수 없는 마스크로 덮고, 이어서 상기 기판에 대하여 원료 가스를 공급하여 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장되는 반도체 결정으로 상기 기판의 요철면을 덮는 것을 특징으로 하는 반도체 기재의 제조 방법.
- 기판의 결정 성장면을 요철면으로 하고, 기상 성장법에 의해 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장시킴으로써 상기 요철면을 반도체 결정으로 덮는 동시에, 이 반도체 결정의 층과 상기 요철면에 있어서의 오목부와의 사이에 공동부를 구비하는 적층체를 제작하여, 상기 공동 부분에서 반도체 결정과 기판을 분리하는 것을 특징으로 하는 반도체 결정의 제조 방법.
- 제13항에 있어서, 상기 기판의 요철면의 오목부를 그 층으로부터는 실질적으로 결정 성장할 수 없는 마스크로 덮고, 그 후, 기상 성장법에 의해 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장시키는 것을 특징으로 하는 반도체 결정의 제조 방법.
- 제13항에 있어서, 상기 반도체 결정이 InGaAlN인 것을 특징으로 하는 반도체 결정의 제조 방법.
- 제13항에 있어서, 상기 기판의 결정 성장면의 볼록부가 평행한 스트라이프 형상으로 이루어지는 볼록부인 것을 특징으로 하는 반도체 결정의 제조 방법.
- 제16항에 있어서, 상기 반도체 결정이 InGaAlN이고, 스트라이프의 길이 방향이 상기 InGaAlN의 (1-100)면과 수직인 것을 특징으로 하는 반도체 결정의 제조 방법.
- 기판의 결정 성장면을 요철면으로 하고, 기상 성장법에 의해 상기 요철면에 있어서의 볼록부의 상측부에서만 결정 성장시킴으로써 상기 요철면을 덮는 제1 반도체 결정의 층을 형성하며, 이 제1 반도체 결정의 층의 표면을 요철면으로 하고, 상기 제1 반도체 결정의 층의 요철면에 있어서의 볼록부의 상측부에서만 결정 성장시킴으로써 상기 요철면을 제2 반도체 결정의 층으로 덮는 동시에, 이 제2 반도체 결정의 층과 상기 요철면에 있어서의 오목부와의 사이에 공동부를 구비하는 적층체를 제작하여, 상기 공동 부분에서 상기 적층체로부터 반도체 결정을 분리하는 것을 특징으로 하는 반도체 결정의 제조 방법.
- 제18항에 있어서, 상기 제1 반도체 결정의 층의 요철면의 오목부를 그 층으로부터는 실질적으로 결정 성장할 수 없는 마스크로 덮고, 그 후, 기상 성장법에 의해 상기 요철면에 있어서의 볼록부의 상측부에서만 제2 반도체 결정의 층을 결정 성장시키는 것을 특징으로 하는 반도체 결정의 제조 방법.
- 제18항에 기재한 제조 방법에 있어서의 제2 반도체 결정의 층의 표면을 요철면으로 하고, 그 위에 마찬가지로 기상 성장법에 의해 제3 반도체 결정의 층 내지는 같은 공정을 반복함으로써 다중적으로 복수의 반도체 결정의 층을 형성하고, 반도체 결정의 층과 요철면에 있어서의 오목부와의 사이에 공동부를 구비하는 적층체를 제작하여, 상기 공동 부분에서 상기 적층체로부터 반도체 결정을 분리하는 것을 특징으로 하는 반도체 결정의 제조 방법.
- 제19항에 기재한 제조 방법에 있어서의 제2 반도체 결정의 층의 표면을 요철면으로 하고, 그 요철면의 오목부를 그 층으로부터는 실질적으로 결정 성장할 수 없는 마스크로 덮고, 그 위에 마찬가지로 기상 성장법에 의해 제3 반도체 결정의 층 내지는 같은 공정을 반복함으로써 다중적으로 복수의 반도체 결정의 층을 형성하고, 반도체 결정의 층과 요철면에 있어서의 오목부와의 사이에 공동부를 구비하는 적층체를 제작하여, 상기 공동 부분에서 상기 적층체로부터 반도체 결정을 분리하는 것을 특징으로 하는 반도체 결정의 제조 방법.
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US9773940B2 (en) | 2009-06-10 | 2017-09-26 | Seoul Viosys Co., Ltd. | Semiconductor substrate, semiconductor device, and manufacturing methods thereof |
US8481411B2 (en) | 2009-06-10 | 2013-07-09 | Seoul Opto Device Co., Ltd. | Method of manufacturing a semiconductor substrate having a cavity |
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Also Published As
Publication number | Publication date |
---|---|
EP1501118B1 (en) | 2009-10-07 |
US20040206299A1 (en) | 2004-10-21 |
DE60030279D1 (de) | 2006-10-05 |
EP1184897A1 (en) | 2002-03-06 |
US7115486B2 (en) | 2006-10-03 |
EP1184897A4 (en) | 2003-07-30 |
EP1184897B8 (en) | 2006-10-11 |
EP1501118A1 (en) | 2005-01-26 |
US6940098B1 (en) | 2005-09-06 |
EP1184897B1 (en) | 2006-08-23 |
KR100677683B1 (ko) | 2007-02-05 |
US7589001B2 (en) | 2009-09-15 |
US20070026644A1 (en) | 2007-02-01 |
WO2000055893A1 (fr) | 2000-09-21 |
DE60043122D1 (de) | 2009-11-19 |
US7504324B2 (en) | 2009-03-17 |
DE60030279T2 (de) | 2007-08-30 |
US20070026643A1 (en) | 2007-02-01 |
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