JP2009132613A - Iii−v族窒化物系半導体基板及びその製造方法、iii−v族窒化物系半導体デバイス、iii−v族窒化物系半導体基板のロット - Google Patents
Iii−v族窒化物系半導体基板及びその製造方法、iii−v族窒化物系半導体デバイス、iii−v族窒化物系半導体基板のロット Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 344
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 95
- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 136
- 239000013598 vector Substances 0.000 claims abstract description 45
- 238000005498 polishing Methods 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 166
- 238000009826 distribution Methods 0.000 abstract description 51
- 230000002349 favourable effect Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 95
- 238000000034 method Methods 0.000 description 43
- 229910052594 sapphire Inorganic materials 0.000 description 26
- 239000010980 sapphire Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
【解決手段】III‐V族窒化物系単結晶からなり、平坦な表面を有するIII‐V族窒化物系半導体基板であって、基板面内の任意の点における基板表面に最も近い低指数面の法線ベクトルを、基板表面に投影したベクトルが、基板面外の特定の点又は領域を向いている。例えば、GaN基板21の基板表面に最も近い低指数面の法線ベクトルを、基板表面に投影したときにできるベクトルは、矢印23で表わされているように、GaN基板21の外部の収束中心領域24に向かって収束するような分布となっている。
【選択図】図10
Description
VAS法を用いて、自立したGaN基板を作製した。基板の作製手順、条件は、以下の通りである。
市販の直径2インチの単結晶サファイアC面基板上に、MOVPE法で、TMGとNH3を原料として、アンドープGaN層を300nm成長した。サファイア基板は、面方位をm軸方向に0.2°オフさせたものを用いた。MOVPEの成長圧力は常圧とし、始めに基板温度は600℃で低温バッファ層を20nm成長した後、基板温度を1100℃に昇温して、GaN層を300nm成長した。キャリアガスは、水素と窒素の混合ガスを用いた。結晶の成長速度は4μm/hであった。この方法で、サファイア基板上にGaNエピタキシャル層を付けた、いわゆるGaNテンプレートを10枚用意した。
参考例2と同様の方法で、GaNの自立基板を作成した。参考例2との違いは、下地に用いるサファイア基板に、面方位をm軸方向に0.5°オフさせたものを用いた点である。
2、5、22 線
3、6、23 矢印
8 Siドープn型GaNバッファ層
9 Siドープn型Al0.15Ga0.85Nクラッド層
10 InGaN−MQW層
11 Mgドープp型Al0.15Ga0.85Nクラッド層
12 Mgドープp型Al0.10Ga0.90Nクラッド層
13Mgドープp型GaNコンタクト層
24 収束中心領域
Claims (9)
- 平坦な表面を有するIII‐V族窒化物系単結晶の半導体基板であって、基板面内の任意の点における基板表面に最も近い低指数面の法線ベクトルを、基板表面に投影したベクトルが、基板面外の特定の点又は領域を向いていることを特徴とするIII‐V族窒化物系半導体基板。
- III‐V族窒化物系単結晶だけからなる自立した基板であることを特徴とする請求項1に記載のIII‐V族窒化物系半導体基板。
- 前記III‐V族窒化物系単結晶は、六方晶系であることを特徴とする請求項2に記載のIII‐V族窒化物系半導体基板。
- 前記基板表面に最も近い低指数面がC面、A面、M面又はR面のいずれかであることを特徴とする請求項3に記載のIII‐V族窒化物系半導体基板。
- 前記基板表面は、鏡面研磨加工が施されていることを特徴とする請求項4に記載のIII‐V族窒化物系半導体基板。
- 請求項5に記載のIII‐V族窒化物系半導体基板を製造する方法であって、基板の反りに起因して発生する結晶方位の傾きよりも大きいオフ角を基板に持たせ、表面側が凹面に反ったIII‐V族窒化物系単結晶の表面を有する基板の当該表面側を平坦に研磨して前記III‐V族窒化物系半導体基板を得ることを特徴とするIII‐V族窒化物系半導体基板の製造方法。
- 請求項1〜5いずれかに記載のIII‐V族窒化物系半導体基板上に、少なくともAlxGa(1-x)N(1≧x>0)で表される層を含む結晶層が形成されていることを特徴とするIII‐V族窒化物系半導体基板。
- 請求項1〜5いずれかに記載のIII‐V族窒化物系半導体基板上に、少なくともAlxGa(1-x)N(1≧x>0)で表される層を含む複数の結晶層が形成されていることを特徴とするIII‐V族窒化物系半導体デバイス。
- 複数のIII‐V族窒化物系半導体基板から構成されるIII‐V族窒化物系半導体基板のロットであって、前記ロットを構成する個々の基板が、請求項1〜5のいずれかに記載のIII‐V族窒化物系半導体基板であることを特徴とするIII‐V族窒化物系半導体基板のロット。
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