JP4232837B2 - 窒化物半導体発光素子を作製する方法 - Google Patents
窒化物半導体発光素子を作製する方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 63
- 238000000034 method Methods 0.000 title claims description 10
- 150000004767 nitrides Chemical class 0.000 title claims description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 139
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 122
- 238000009826 distribution Methods 0.000 claims description 90
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 229910052738 indium Inorganic materials 0.000 claims description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 2
- 238000005424 photoluminescence Methods 0.000 description 34
- 239000013078 crystal Substances 0.000 description 17
- 229910052594 sapphire Inorganic materials 0.000 description 17
- 239000010980 sapphire Substances 0.000 description 17
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000005253 cladding Methods 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001947 vapour-phase growth Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 101150099299 HBQ1 gene Proteins 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 gallium nitrides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Description
図1は、サファイア基板を用いたInGaN活性層の成長を説明する図面である。図1(a)を参照すると、有機金属気相成長炉11のサセプタ13上に配置されたサファイア基板15の配置が示されている。サファイア基板15は、オリエンテーションフラット(以下、「OF」と記す)をサセプタ13のエッジに向けて配置されている。図1(b)を参照すると、サファイア基板15の「OF」から中心点Cを通る軸上における5点の測定点でのインジウム組成およびInGaN層の成長速度が示されている。図1(b)において、「AOF」は、上記軸と基板エッジとの交点を示す。図1(b)に示されるように、インジウム組成は、基板の中心点CからエッジEに向けて僅かな増加が見られるが、基板主面上においてほぼ一定である。インジウム組成におけるこの振る舞いは、サファイア基板主面においてオフ角分布がないことに起因している。一方、InGaNの成長速度は、AOFからOFに向けて単調に増加している。成長速度におけるこの振る舞いは、成長炉における原料(フォローチャネルの上流から下流に流れる原料)の流れに関連しており、成長速度が速いとインジウムの取り込み量が増加する。このため、インジウム組成が増加する。
エピタキシャル基板 基板の種類 基板の向き
E1:サファイア基板(0001)n−GaNテンプレート :通常
E2:GaN(0001)基板、オフ角分布0.1−0.6度:通常
E3:GaN(0001)基板、オフ角分布0.1−0.6度:通常から90度回転
サファイア基板では、サファイア基板中心のオフ角に対して、基板面内のオフ角が−0.1度〜+0.1度程度で非常によく制御されている。このため、オフ角(基板主面の法線とC軸との成す角)が主面内に亘って分布していない。GaN(0001)基板では、基板表面を(0001)面に合わせて基板主面を作製するけれども、オフ角が主面内に亘って分布する。このオフ角分布は、GaN結晶を作製法に由来する。
図9は、本発明の実施の形態に係る、窒化物半導体発光素子を作製する方法の主要な工程を含むフローチャートを示す。フローチャート100を参照すると、工程S101では、既に説明されたようなオフ角分布を有するGaN基板を準備する。オフ角は、主面において分布すると共に、主面のエッジ上のある一点から中心点を通り該エッジ上の他点に向かう線分上において単調に変化している。オフ角の極小点および極大点が基板主面内に存在しない。ある値のオフ角の等しい点を結ぶ等オフ角線は、GaN基板のエッジの一点から他点まで伸びており、また曲線および/または線分である。一実施例では、等オフ角線の曲率半径は、GaN基板の外形の曲率半径のよりも大きいことが好ましい。これ故に、主面におけるオフ角分布は非常に緩やかに変化する。
Claims (5)
- 窒化物半導体発光素子を作製する方法であって、
有機金属気相成長炉のサセプタ上に配置された複数の窒化ガリウム基板の主面上に窒化ガリウム系半導体膜を一括して成長する工程と、
原料ガスを供給して、量子井戸構造を有する活性層を前記窒化ガリウム系半導体膜上に有機金属気相成長炉を用いて形成する工程と
を備え、
前記活性層は、III族元素としてインジウムを含む窒化ガリウム系半導体からなる井戸層を含んでおり、
各窒化ガリウム基板の前記主面の法線と前記窒化ガリウム基板のC軸との成すオフ角は、前記主面に亘って分布すると共に、前記主面のエッジ上の一点から該エッジ上の他点に向かい前記窒化ガリウム基板の前記主面の中心点を通る線分上において単調に変化しており、前記エッジ上の前記一点におけるオフ角は該エッジ上の前記他点におけるオフ角より大きく、
前記井戸層の成長は、前記サセプタを回転させながら行われ、
前記原料ガスの供給及び前記サセプタの回転により、当該原料ガス流の上流から下流に向かう流れ方向に応じた、前記活性層の前記井戸層の成長速度分布が生じており、前記エッジ上の前記一点が前記成長速度分布の大きい側に、且つ前記他点が前記成長速度分布の小さい側に位置し、
前記主面上における第1の点におけるオフ角は前記主面上における第2の点におけるオフ角より小さいと共に、前記第1の点上における井戸層の膜厚は前記第2の点上における井戸層の膜厚より薄く、前記第1の点と前記第2の点は、互いに別の窒化物半導体発光素子に位置する、ことを特徴とする方法。 - 前記活性層を形成するための原料ガスは、前記サセプタの主面の一端から他端を横切る方向に供給される、ことを特徴とする請求項1に記載された方法。
- 前記活性層を形成するための原料ガスは、前記サセプタの主面に交差する軸の方向に供給される、ことを特徴とする請求項1に記載された方法。
- 前記サセプタは、該サセプタの前記主面上に規定される円周上に設けられ窒化ガリウム基板のための複数のガイドを有しており、
前記サセプタの前記主面において各窒化ガリウムの前記線分は、前記円周の接線と交差する方向に向きづけられている、ことを特徴とする請求項3に記載された方法。 - 前記窒化ガリウム基板を前記サセプタ上に配置する工程を更に備える、ことを特徴とする請求項1〜請求項4のいずれか一項に記載された方法。
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JP2007085439A JP4232837B2 (ja) | 2007-03-28 | 2007-03-28 | 窒化物半導体発光素子を作製する方法 |
KR1020097019352A KR101087899B1 (ko) | 2007-03-28 | 2008-02-20 | 질화갈륨계 에피택셜 웨이퍼 및 질화갈륨계 반도체 발광 소자를 제작하는 방법 |
EP08711671A EP2131388A4 (en) | 2007-03-28 | 2008-02-20 | GALLIUM NITRIDE EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
CN2008800103602A CN101647091B (zh) | 2007-03-28 | 2008-02-20 | 基于氮化镓的外延晶片和制造基于氮化镓的半导体发光器件的方法 |
US12/532,077 US8513645B2 (en) | 2007-03-28 | 2008-02-20 | Gallium nitride-based epitaxial wafer and method of producing gallium nitride-based semiconductor light-emitting device |
PCT/JP2008/052865 WO2008117595A1 (ja) | 2007-03-28 | 2008-02-20 | 窒化ガリウム系エピタキシャルウエハ、および窒化ガリウム系半導体発光素子を作製する方法 |
TW097107374A TWI396781B (zh) | 2007-03-28 | 2008-03-03 | A gallium nitride-based epitaxial wafer, and a gallium nitride-based semiconductor light-emitting element |
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JP2010080764A (ja) * | 2008-09-26 | 2010-04-08 | Sumitomo Electric Ind Ltd | 窒化ガリウム系エピタキシャルウエハ、およびエピタキシャルウエハを作製する方法 |
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JP2010080764A (ja) * | 2008-09-26 | 2010-04-08 | Sumitomo Electric Ind Ltd | 窒化ガリウム系エピタキシャルウエハ、およびエピタキシャルウエハを作製する方法 |
US8018029B2 (en) | 2008-09-26 | 2011-09-13 | Sumitomo Electric Industries, Ltd. | Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer |
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TWI396781B (zh) | 2013-05-21 |
TW200844278A (en) | 2008-11-16 |
CN101647091A (zh) | 2010-02-10 |
KR101087899B1 (ko) | 2011-11-30 |
KR20090119912A (ko) | 2009-11-20 |
WO2008117595A1 (ja) | 2008-10-02 |
US20100102297A1 (en) | 2010-04-29 |
US8513645B2 (en) | 2013-08-20 |
CN101647091B (zh) | 2011-11-23 |
EP2131388A1 (en) | 2009-12-09 |
EP2131388A4 (en) | 2010-11-03 |
JP2008244319A (ja) | 2008-10-09 |
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