JP4451846B2 - 窒化物半導体素子の製造方法 - Google Patents
窒化物半導体素子の製造方法 Download PDFInfo
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- JP4451846B2 JP4451846B2 JP2005508004A JP2005508004A JP4451846B2 JP 4451846 B2 JP4451846 B2 JP 4451846B2 JP 2005508004 A JP2005508004 A JP 2005508004A JP 2005508004 A JP2005508004 A JP 2005508004A JP 4451846 B2 JP4451846 B2 JP 4451846B2
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H01L21/02367—Substrates
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- H01L21/02367—Substrates
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
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- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Description
(先行文献の一覧)
特開2001―274093号公報
特開2001−168042号公報
特開2002−9004号公報(欧州特許公開第1104031号公報と内容同一)
特開2001−176813号公報
特開2001−342100号公報(の段落番号0022)
国際公開第01/84608号パンフレット(欧州特許公開第1278233号公報と内容同一)
Claims (8)
- 空隙からなる凹部およびIII族窒化物からなる凸部が表面に形成されている基板上に、前記凸部の上面を種結晶としてIII族窒化物の結晶を横方向成長させることにより窒化物半導体層を形成する横方向成長工程、および、前記窒化物半導体層の表面に、活性層を有する窒化物半導体積層体を形成する積層体形成工程を順に有し、
前記基板の格子定数は、前記III族窒化物の格子定数とは異なり、
前記基板は誘電体からなるマスクを有しており、
前記III族窒化物の結晶を900℃以上の温度で横方向成長させ、
前記マスクは、前記凸部の側面にのみ形成され、前記凸部の上面は露出しており、かつ、前記凹部には基板が露出しており、
前記マスクの高さL1は、50nm以上5000nm以下であり、
前記凹部の幅L2は、5000nm以上50000nm以下であり、
前記凹部のアスペクト比L1/L2は、0.001以上1.0以下である窒化物半導体素子の製造方法であって、
前記横方向成長工程は、
III族窒化物からなるシード層を前記基板上に成長させるシード層形成工程と、
前記シード層の表面に凸部形成用マスク層を堆積するマスク層堆積工程と、
前記凸部形成用マスク層をパターニングするマスク層パターニング工程と、
パターニングされた前記凸部形成用マスク層をマスクとして前記シード層をエッチングするシード層エッチング工程と、
前記凸部形成用マスク層を除去することにより、前記シード層からなる凸部及び前記基板が露出する凹部を形成するマスク層除去工程と、
前記凸部を含む前記基板の表面に、層状の誘電体を形成する誘電体形成工程と、
前記誘電体に対して異方性エッチングを行い、前記凸部の上面の誘電体及び前記凹部の底面の誘電体を除去することにより、前記凸部の側面にのみ前記誘電体からなるマスクを残存させるマスク形成工程とを有する窒化物半導体素子の製造方法。 - 前記窒化物半導体層は、1100℃以下で結晶成長させることにより形成される請求項1に記載の窒化物半導体素子の製造方法。
- 前記III族窒化物は、GaN系材料である請求項1に記載の窒化物半導体素子の製造方法。
- 前記基板は、サファイア基板である請求項1に記載の窒化物半導体素子の製造方法。
- 前記マスクの幅L3は、10nm以上1000nm以下である請求項1に記載の窒化物半導体素子の製造方法。
- 前記凸部の幅L4は、500nm以上10000nm以下である請求項1に記載の窒化物半導体素子の製造方法。
- 前記半導体層は、圧力が1.3×104Pa以上4.0×104Pa以下で結晶成長させることにより形成される請求項1に記載の窒化物半導体素子の製造方法。
- 前記半導体層は、V族元素とIII族元素との原料流量比(V/III比)が3000以上5000以下で結晶成長させることにより形成される請求項1に記載の窒化物半導体素子の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2003005685 | 2003-01-14 | ||
JP2003005685 | 2003-01-14 | ||
JP2003173173 | 2003-06-18 | ||
JP2003173173 | 2003-06-18 | ||
PCT/JP2004/000201 WO2004064212A1 (ja) | 2003-01-14 | 2004-01-14 | 窒化物半導体素子及びその製造方法、並びに窒化物半導体基板の製造方法 |
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JPWO2004064212A1 JPWO2004064212A1 (ja) | 2006-05-18 |
JP4451846B2 true JP4451846B2 (ja) | 2010-04-14 |
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US (1) | US6927149B2 (ja) |
JP (1) | JP4451846B2 (ja) |
WO (1) | WO2004064212A1 (ja) |
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US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
JP2004273661A (ja) * | 2003-03-07 | 2004-09-30 | Sumitomo Chem Co Ltd | 窒化ガリウム単結晶基板の製造方法 |
KR100506739B1 (ko) * | 2003-12-23 | 2005-08-08 | 삼성전기주식회사 | 알루미늄(Al)을 함유한 질화물 반도체 결정 성장방법 |
WO2006062084A1 (ja) * | 2004-12-08 | 2006-06-15 | Sumitomo Electric Industries, Ltd. | 半導体レーザ素子およびその製造方法 |
US7527742B2 (en) * | 2005-06-27 | 2009-05-05 | Momentive Performance Materials Inc. | Etchant, method of etching, laminate formed thereby, and device |
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JP4656410B2 (ja) * | 2005-09-05 | 2011-03-23 | 住友電気工業株式会社 | 窒化物半導体デバイスの製造方法 |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
US8188573B2 (en) * | 2006-08-31 | 2012-05-29 | Industrial Technology Research Institute | Nitride semiconductor structure |
TWI393174B (zh) * | 2009-03-23 | 2013-04-11 | Ind Tech Res Inst | 氮化物半導體基板及其製造方法 |
TWI319893B (en) * | 2006-08-31 | 2010-01-21 | Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate | |
JP5076746B2 (ja) * | 2006-09-04 | 2012-11-21 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
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TWI411125B (zh) * | 2008-03-05 | 2013-10-01 | Advanced Optoelectronic Tech | 三族氮化合物半導體發光元件之製造方法及其結構 |
GB2460898B (en) | 2008-06-19 | 2012-10-10 | Wang Nang Wang | Production of semiconductor material and devices using oblique angle etched templates |
KR101142082B1 (ko) * | 2009-03-12 | 2012-05-03 | 주식회사 엘지실트론 | 질화물 반도체 기판 및 그 제조 방법과 이를 이용한 질화물반도체 소자 |
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JP4647020B2 (ja) * | 2009-07-30 | 2011-03-09 | キヤノン株式会社 | 窒化物半導体の微細構造の製造方法 |
JP2011216578A (ja) * | 2010-03-31 | 2011-10-27 | Advanced Power Device Research Association | 窒化物半導体及び窒化物半導体素子 |
KR101781438B1 (ko) * | 2011-06-14 | 2017-09-25 | 삼성전자주식회사 | 반도체 발광소자의 제조방법 |
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2004
- 2004-01-14 WO PCT/JP2004/000201 patent/WO2004064212A1/ja active Application Filing
- 2004-01-14 JP JP2005508004A patent/JP4451846B2/ja not_active Expired - Fee Related
- 2004-07-14 US US10/890,263 patent/US6927149B2/en not_active Expired - Lifetime
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US20040251519A1 (en) | 2004-12-16 |
JPWO2004064212A1 (ja) | 2006-05-18 |
WO2004064212A1 (ja) | 2004-07-29 |
US6927149B2 (en) | 2005-08-09 |
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