DE59912422D1 - Halbleiterlaser mit Gitterstruktur - Google Patents

Halbleiterlaser mit Gitterstruktur

Info

Publication number
DE59912422D1
DE59912422D1 DE59912422T DE59912422T DE59912422D1 DE 59912422 D1 DE59912422 D1 DE 59912422D1 DE 59912422 T DE59912422 T DE 59912422T DE 59912422 T DE59912422 T DE 59912422T DE 59912422 D1 DE59912422 D1 DE 59912422D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
lattice structure
lattice
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE59912422T
Other languages
English (en)
Inventor
Prof Dr Forchel
Martin Kamp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE59912422D1 publication Critical patent/DE59912422D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE59912422T 1998-08-31 1999-07-28 Halbleiterlaser mit Gitterstruktur Expired - Lifetime DE59912422D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE29815522U DE29815522U1 (de) 1998-08-31 1998-08-31 Halbleiterlaser mit Gitterstruktur
US09/296,059 US6671306B1 (en) 1998-08-31 1999-04-21 Semiconductor laser with a lattice structure

Publications (1)

Publication Number Publication Date
DE59912422D1 true DE59912422D1 (de) 2005-09-22

Family

ID=8061951

Family Applications (2)

Application Number Title Priority Date Filing Date
DE29815522U Expired - Lifetime DE29815522U1 (de) 1998-08-31 1998-08-31 Halbleiterlaser mit Gitterstruktur
DE59912422T Expired - Lifetime DE59912422D1 (de) 1998-08-31 1999-07-28 Halbleiterlaser mit Gitterstruktur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE29815522U Expired - Lifetime DE29815522U1 (de) 1998-08-31 1998-08-31 Halbleiterlaser mit Gitterstruktur

Country Status (2)

Country Link
US (1) US6671306B1 (de)
DE (2) DE29815522U1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1283571B1 (de) 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
ATE361565T1 (de) * 2002-03-08 2007-05-15 Nanoplus Gmbh Nanosystems And Ein halbleiterlaserarray mit seitlicher gratingstruktur
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子
KR100839343B1 (ko) * 2007-01-23 2008-06-17 광주과학기술원 반도체 레이저 소자 및 그 제조 방법
JP4312239B2 (ja) 2007-02-16 2009-08-12 富士通株式会社 光素子及びその製造方法
DE102007013173A1 (de) 2007-03-20 2008-09-25 Rottenkolber, Matthias, Dr. Durchstimmbarer Halbleiterlaser
DE102007013470A1 (de) 2007-03-21 2008-09-25 Rottenkolber, Matthias, Dr. Direkt durchstimmbarer Halbleiterlaser mit Piezotranslator
WO2009055894A1 (en) * 2007-10-31 2009-05-07 Onechip Photonics Inc. Enhanced efficiency laterally-coupled distributed feedback laser
US7796656B2 (en) * 2007-11-05 2010-09-14 Onechip Photonics Inc. Enhanced efficiency laterally-coupled distributed feedback laser
EP3767762B1 (de) 2019-07-14 2022-03-30 Instytut Wysokich Cisnien Polskiej Akademii Nauk Laserdiode mit verteilter rückkopplung und deren herstellungsverfahren
PL439368A1 (pl) 2021-10-30 2023-05-02 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Unipress Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
US5559053A (en) * 1994-04-14 1996-09-24 Lucent Technologies Inc. Vertical cavity semiconductor laser
US5563902A (en) * 1994-08-23 1996-10-08 Samsung Electronics, Co. Ltd. Semiconductor ridge waveguide laser with lateral current injection
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法

Also Published As

Publication number Publication date
US6671306B1 (en) 2003-12-30
DE29815522U1 (de) 1998-12-03

Similar Documents

Publication Publication Date Title
DE69942509D1 (de) Gegenstand mit halbleiterchip
DE69937137D1 (de) Halbleitervorrichtung mit Reflektor
DE69808342D1 (de) Laser mit externem resonator
DE69836654D1 (de) Halbleiterstruktur mit abruptem Dotierungsprofil
DE69902421T2 (de) Halbleiterlaser mit erhöhter Ausgangsleistung
DE60127027D1 (de) Halbleiterelement mit Leistungsverdrahtungsstruktur
DE69923769D1 (de) Asynchrones halbleiterspeicher-fliessband
DE69806137D1 (de) Silizium mit niedriger defektdichte
DE69943006D1 (de) Kühlkörper
DE69943196D1 (de) Halbleiter-Leistungs-Modul
DE69836698D1 (de) Verbindungshalbleiterlaser
DE69801974D1 (de) Halbleiterlaser
DE69940029D1 (de) Halbleiterbauelement
DE69920653D1 (de) Halbleiterlaservorrichtung
DE60014969D1 (de) Halbleiterlaservorrichtung mit einer divergierenden region
DE59915065D1 (de) Halbleiterbauelement mit mehreren halbleiterchips
DE60134911D1 (de) Halbleiterlaser mit verteilter Rückkopplung
DE69904265D1 (de) Halbleiterlaser
DE69725783D1 (de) Halbleiterlaser
DE59912422D1 (de) Halbleiterlaser mit Gitterstruktur
DE69728503D1 (de) Halbleiterlaser
DE69922427D1 (de) Halbleiterlaser
DE69905197D1 (de) Halbleiterlaser
DE60041742D1 (de) Halbleiterlaser
DK0931609T3 (da) Væskekölet kokille

Legal Events

Date Code Title Description
8364 No opposition during term of opposition