PL439368A1 - Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej - Google Patents
Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowejInfo
- Publication number
- PL439368A1 PL439368A1 PL439368A PL43936821A PL439368A1 PL 439368 A1 PL439368 A1 PL 439368A1 PL 439368 A PL439368 A PL 439368A PL 43936821 A PL43936821 A PL 43936821A PL 439368 A1 PL439368 A1 PL 439368A1
- Authority
- PL
- Poland
- Prior art keywords
- sup
- channel
- ion
- mask
- generating
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- -1 silicon ions Chemical class 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
Sposób polega na tym, że po wytworzeniu wybranej warstwy epitaksjalnej (2) przerywa się proces wzrostu i nanosi się na górną powierzchnię wytworzonej struktury (1, 2) maskę lokalnie blokującą implantację jonową. Maska zawiera szereg równoległych względem siebie podłużnych okien. Górną warstwę epitaksjalną (2) poddaje procesowi implantacji jonowej jonami germanu lub krzemu, na głębokość i do poziomu koncentracji zaimplantowanych atomów wyższego niż 5 x 10<sup>18</sup> cm<sup>-3</sup>. Po zakończeniu implantacji usuwa się maskę, po czym wygrzewa się strukturę epitaksjalną w temperaturze z zakresu od 1000 do 1400°C przez okres od dziesięciu sekund do jednej godziny. W wygrzanej strukturze (1, 2), zabezpiecza się jej górną powierzchnię przed wpływem medium trawiącego, po czym w tej powierzchni wykonuje się co najmniej jeden kanał (7) na to medium. Kanał (7) sięga w głąb (L6) struktury co najmniej do połowy grubości obszarów poddanych implantacji jonowej. Następnie usuwa się materiał poddany implantacji jonowej, poprzez wytrawianie elektrochemiczne kwaśnym medium trawiącym podawanym przez wspomniany kanał (7).
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL439368A PL439368A1 (pl) | 2021-10-30 | 2021-10-30 | Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej |
EP22461628.4A EP4175079A1 (en) | 2021-10-30 | 2022-10-30 | Method of fabrication of region with regulary varying refractive index in a layered semiconductor structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL439368A PL439368A1 (pl) | 2021-10-30 | 2021-10-30 | Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej |
Publications (1)
Publication Number | Publication Date |
---|---|
PL439368A1 true PL439368A1 (pl) | 2023-05-02 |
Family
ID=84785385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL439368A PL439368A1 (pl) | 2021-10-30 | 2021-10-30 | Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP4175079A1 (pl) |
PL (1) | PL439368A1 (pl) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2486251A1 (fr) * | 1980-07-03 | 1982-01-08 | Commissariat Energie Atomique | Procede de realisation d'un reseau optique |
US4777148A (en) | 1985-01-30 | 1988-10-11 | Massachusetts Institute Of Technology | Process for making a mesa GaInAsP/InP distributed feedback laser |
US4722092A (en) | 1985-01-30 | 1988-01-26 | Massachusetts Institute Of Technology | GaInAsP/InP distributed feedback laser |
DE29815522U1 (de) | 1998-08-31 | 1998-12-03 | Forchel, Alfred, Prof. Dr., 97074 Würzburg | Halbleiterlaser mit Gitterstruktur |
CA2254275C (en) * | 1998-11-20 | 2007-06-26 | Patrik Schmuki | Selective electrochemical process for creating semiconductor nano- and micro-patterns |
EP1094345A1 (en) | 1999-10-19 | 2001-04-25 | BRITISH TELECOMMUNICATIONS public limited company | Method of making a photonic band gap structure |
US6365428B1 (en) | 2000-06-15 | 2002-04-02 | Sandia Corporation | Embedded high-contrast distributed grating structures |
US6649439B1 (en) | 2002-08-01 | 2003-11-18 | Northrop Grumman Corporation | Semiconductor-air gap grating fabrication using a sacrificial layer process |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
KR20130007557A (ko) | 2010-01-27 | 2013-01-18 | 예일 유니버시티 | GaN 소자의 전도도 기반 선택적 에칭 및 그의 응용 |
US9583353B2 (en) | 2012-06-28 | 2017-02-28 | Yale University | Lateral electrochemical etching of III-nitride materials for microfabrication |
US11137536B2 (en) * | 2018-07-26 | 2021-10-05 | Facebook Technologies, Llc | Bragg-like gratings on high refractive index material |
PL3767762T3 (pl) | 2019-07-14 | 2022-12-12 | Instytut Wysokich Ciśnień Polskiej Akademii Nauk | Dioda laserowa z rozłożonym sprzężeniem zwrotnym i sposób wytwarzania takiej diody |
WO2021150304A1 (en) * | 2020-01-23 | 2021-07-29 | Yale University | Stacked high contrast gratings and methods of making and using thereof |
-
2021
- 2021-10-30 PL PL439368A patent/PL439368A1/pl unknown
-
2022
- 2022-10-30 EP EP22461628.4A patent/EP4175079A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP4175079A1 (en) | 2023-05-03 |
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