DE60130205D1 - Implantierungsverfahren unter verwendung substöchiometrischer sauerstoffdosen bei verschiedenen energien - Google Patents

Implantierungsverfahren unter verwendung substöchiometrischer sauerstoffdosen bei verschiedenen energien

Info

Publication number
DE60130205D1
DE60130205D1 DE60130205T DE60130205T DE60130205D1 DE 60130205 D1 DE60130205 D1 DE 60130205D1 DE 60130205 T DE60130205 T DE 60130205T DE 60130205 T DE60130205 T DE 60130205T DE 60130205 D1 DE60130205 D1 DE 60130205D1
Authority
DE
Germany
Prior art keywords
soi
regions
substochiometric
silicon
implantation procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60130205T
Other languages
English (en)
Other versions
DE60130205T2 (de
Inventor
Robert P Dolan
Bernhardt F Cordts
Maria J Anc
Michael L Alles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibis Technology Corp
Original Assignee
Ibis Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibis Technology Corp filed Critical Ibis Technology Corp
Publication of DE60130205D1 publication Critical patent/DE60130205D1/de
Application granted granted Critical
Publication of DE60130205T2 publication Critical patent/DE60130205T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Led Device Packages (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Lenses (AREA)
DE60130205T 2000-05-03 2001-05-02 Implantierungsverfahren unter verwendung substöchiometrischer sauerstoffdosen bei verschiedenen energien Expired - Fee Related DE60130205T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20184500P 2000-05-03 2000-05-03
US201845P 2000-05-03
US748526 2000-12-21
US09/748,526 US6417078B1 (en) 2000-05-03 2000-12-21 Implantation process using sub-stoichiometric, oxygen doses at different energies
PCT/US2001/014097 WO2001084601A2 (en) 2000-05-03 2001-05-02 Implantation process using sub-stoichiometric, oxygen doses at different energies

Publications (2)

Publication Number Publication Date
DE60130205D1 true DE60130205D1 (de) 2007-10-11
DE60130205T2 DE60130205T2 (de) 2008-05-15

Family

ID=26897142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60130205T Expired - Fee Related DE60130205T2 (de) 2000-05-03 2001-05-02 Implantierungsverfahren unter verwendung substöchiometrischer sauerstoffdosen bei verschiedenen energien

Country Status (8)

Country Link
US (2) US6417078B1 (de)
EP (1) EP1279194B1 (de)
JP (1) JP2003533020A (de)
KR (1) KR100806439B1 (de)
AT (1) ATE371953T1 (de)
AU (1) AU2001259344A1 (de)
DE (1) DE60130205T2 (de)
WO (1) WO2001084601A2 (de)

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US9577134B2 (en) 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
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US9263625B2 (en) 2014-06-30 2016-02-16 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
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Also Published As

Publication number Publication date
KR100806439B1 (ko) 2008-02-21
US6794264B2 (en) 2004-09-21
KR20020094003A (ko) 2002-12-16
AU2001259344A1 (en) 2001-11-12
US20020081824A1 (en) 2002-06-27
EP1279194B1 (de) 2007-08-29
ATE371953T1 (de) 2007-09-15
US20020123211A1 (en) 2002-09-05
EP1279194A2 (de) 2003-01-29
US6417078B1 (en) 2002-07-09
WO2001084601A3 (en) 2002-05-23
JP2003533020A (ja) 2003-11-05
DE60130205T2 (de) 2008-05-15
WO2001084601A2 (en) 2001-11-08

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