AU2001259344A1 - Implantation process using sub-stoichiometric, oxygen doses at different energies - Google Patents

Implantation process using sub-stoichiometric, oxygen doses at different energies

Info

Publication number
AU2001259344A1
AU2001259344A1 AU2001259344A AU5934401A AU2001259344A1 AU 2001259344 A1 AU2001259344 A1 AU 2001259344A1 AU 2001259344 A AU2001259344 A AU 2001259344A AU 5934401 A AU5934401 A AU 5934401A AU 2001259344 A1 AU2001259344 A1 AU 2001259344A1
Authority
AU
Australia
Prior art keywords
sub
soi
stoichiometric
regions
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001259344A
Inventor
Michael L. Alles
Maria J. Anc
Bernhardt F. Cordts
Robert P. Dolan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibis Technology Corp
Original Assignee
Ibis Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibis Technology Corp filed Critical Ibis Technology Corp
Publication of AU2001259344A1 publication Critical patent/AU2001259344A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Led Device Packages (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Lenses (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2x10<7 >cm<-2>. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.
AU2001259344A 2000-05-03 2001-05-02 Implantation process using sub-stoichiometric, oxygen doses at different energies Abandoned AU2001259344A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20184500P 2000-05-03 2000-05-03
US60201845 2000-05-03
US09/748,526 US6417078B1 (en) 2000-05-03 2000-12-21 Implantation process using sub-stoichiometric, oxygen doses at different energies
US09748526 2000-12-21
PCT/US2001/014097 WO2001084601A2 (en) 2000-05-03 2001-05-02 Implantation process using sub-stoichiometric, oxygen doses at different energies

Publications (1)

Publication Number Publication Date
AU2001259344A1 true AU2001259344A1 (en) 2001-11-12

Family

ID=26897142

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001259344A Abandoned AU2001259344A1 (en) 2000-05-03 2001-05-02 Implantation process using sub-stoichiometric, oxygen doses at different energies

Country Status (8)

Country Link
US (2) US6417078B1 (en)
EP (1) EP1279194B1 (en)
JP (1) JP2003533020A (en)
KR (1) KR100806439B1 (en)
AT (1) ATE371953T1 (en)
AU (1) AU2001259344A1 (en)
DE (1) DE60130205T2 (en)
WO (1) WO2001084601A2 (en)

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Also Published As

Publication number Publication date
US20020123211A1 (en) 2002-09-05
EP1279194A2 (en) 2003-01-29
KR100806439B1 (en) 2008-02-21
US6417078B1 (en) 2002-07-09
DE60130205D1 (en) 2007-10-11
ATE371953T1 (en) 2007-09-15
JP2003533020A (en) 2003-11-05
US20020081824A1 (en) 2002-06-27
EP1279194B1 (en) 2007-08-29
KR20020094003A (en) 2002-12-16
DE60130205T2 (en) 2008-05-15
WO2001084601A2 (en) 2001-11-08
US6794264B2 (en) 2004-09-21
WO2001084601A3 (en) 2002-05-23

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