JP6994745B2 - 発光素子パッケージ及び照明装置 - Google Patents
発光素子パッケージ及び照明装置 Download PDFInfo
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- 239000010949 copper Substances 0.000 description 24
- 229910052709 silver Inorganic materials 0.000 description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 16
- 239000004332 silver Substances 0.000 description 16
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
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- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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- 239000011810 insulating material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
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- 229910052697 platinum Inorganic materials 0.000 description 3
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- 239000004593 Epoxy Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 230000000903 blocking effect Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
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- 230000008094 contradictory effect Effects 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
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- JSUIEZRQVIVAMP-UHFFFAOYSA-N gallium iron Chemical compound [Fe].[Ga] JSUIEZRQVIVAMP-UHFFFAOYSA-N 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
Claims (9)
- 第1リードフレーム130と、
前記第1リードフレームから第1方向Xに離隔した第2リードフレーム140と、
前記第1及び第2リードフレームと結合される胴体120と、
前記第1リードフレームの上に実装される発光素子150と、
前記第2リードフレームの上に実装される保護素子160と、
を含み、
前記胴体は、相互反対側第1外側面及び第2外側面、相互反対側第3外側面及び第4外側面を含み、
前記胴体120は、前記第1及び第2リードフレームの上面一部を露出させるキャビティ125を含み、
前記キャビティ125は、前記第1リードフレームを露出させる第1底面125a、前記第2リードフレームを露出させる第2及び第3底面125b、125cを含み、
前記第1底面は、前記発光素子が配置される領域であり、前記発光素子の形状と対応する形状を有し、
前記第1底面のエッジは、前記第1リードフレームの上で前記発光素子の側面と一定の間隔を有し、
前記第2及び第3底面は、前記キャビティの内側面によって離隔し、
前記第1及び第3底面は、前記キャビティの内側面によって離隔し、
前記第2底面は、前記第4外側面に隣接した前記第1底面のエッジから前記第1外側面に向かって延長される領域に配置され、前記発光素子に連結されたワイヤがボンディングされ、
前記第1底面は、前記第3底面と前記第3外側面に隣接したエッジから前記第3外側面に向かって延長され、前記保護素子に連結されたワイヤがボンディングされる領域を含み、
前記第1リードフレームは、第1乃至第4側部130a乃至130dを含み、前記第1側部130aは、前記胴体の第1側面から外側方向に突出した第1突出部131と、前記第1突出部の端部に配置された第1接触部とを含み、
前記第2リードフレームは、第5乃至第8側部140a乃至140dを含み、前記第5側部140aは、前記胴体の第1側面と対称する第2側面から外側方向に突出した第2突出部141と、前記第2突出部の端部に配置された第2接触部とを含み、
前記第1及び第2接触部131a、141aのうちの少なくとも1つは、第2層及び前記第2層を覆う第1層を含み、
前記第1層は、酸化防止機能を含み、
前記第1側部は、前記第1突出部から延長される第1及び第2切断部133、135を含み、前記第1突出部は、前記第1及び第2切断部より外側に配置され、
前記第5側部は、前記第2突出部から延長される第3及び第4切断部143、145を含み、前記第2突出部は、前記第3及び第4切断部より外側に配置され、
前記第1乃至第4切断部133、135、143、145は、前記第2層L2が露出し、
前記第1層と前記第2層は、異なる金属で形成され、
前記第2層は、前記第1層より接触抵抗が大きい金属であることを特徴とする、発光素子パッケージ。 - 前記第1及び第2接触部は、前記第1方向と直交する第2方向Yに300μm以上の幅を有し、
前記第1接触部と第1及び第2切断部133、135の間の段差の高さHは、10μm乃至300μmであり、
前記第2接触部と第3及び第4切断部143、145の間の段差の高さHは、10μm乃至300μmであることを特徴とする、請求項1に記載の発光素子パッケージ。 - 前記第1層は、Agを含み、
前記第2層は、Cuを含むことを特徴とする、請求項1に記載の発光素子パッケージ。 - 前記第1切断部は、前記第1接触部から延長される第1傾斜部133aと、前記第1傾斜部から延長された第1エッジ部133bとを含み、
前記第2切断部は、前記第1接触部から延長される第2傾斜部135aと、前記第2傾斜部から延長された第2エッジ部135bとを含み、
前記第3切断部は、前記第2接触部から延長される第5傾斜部143aと、前記第5傾斜部から延長された第3エッジ部143bを含み、
前記第4切断部は、前記第2接触部から延長される第6傾斜部145aと、前記第6傾斜部から延長された第4エッジ部145bを含むことを特徴とする、請求項1から3のいずれか一項に記載の発光素子パッケージ。 - 前記第1切断部233は、前記第1接触部231aから曲面で延長される第1ベンディング部233aと、前記第1ベンディング部から延長された第1エッジ部233bとを含み、
前記第2切断部235は、前記第1接触部231aから曲面で延長される第2ベンディング部235aと、前記第2ベンディング部から延長された第2エッジ部235bとを含み、
前記第3切断部243は、前記第2接触部241aから曲面で延長される第3ベンディング部243aと、前記第3ベンディング部から延長された第3エッジ部243bを含み、
前記第4切断部245は、前記第2接触部241aから曲面で延長される第4ベンディング部245aと、前記第4ベンディング部から延長された第4エッジ部245bを含むことを特徴とする、請求項1から3のいずれか一項 に記載の発光素子パッケージ。 - 前記第1及び第2切断部333、335は面型であり、
前記第1切断部333は、前記第1突出部331と第4側部130dとの間に配置され、
前記第2切断部335は、前記第1突出部331と第3側部130cとの間に配置され、
前記第1切断部333と前記第1突出部331と第4側部130dとがなす傾斜角は鈍角であり、
前記第2切断部335と前記第1突出部331と第3側部130cとがなす傾斜角は鈍角であり、
前記第3及び第4切断部343、345は、面型であり、
前記第3切断部343は、前記第2突出部341と第8側部140dの間に配置され、
前記第4切断部345は、前記第2突出部341と第7側部140cの間に配置され、
前記第3切断部343と前記第2突出部341と第8側部140dとがなす傾斜角は、鈍角であり、
前記第4切断部345と前記第2突出部341と第7側部140cとがなす傾斜角は、鈍角であることを特徴とする、第請求項1から3のいずれか一項 に記載の発光素子パッケージ。 - 前記第1リードフレームは、前記第2側部の両端に第3及び第4傾斜部138a、138bを含み、
前記第3傾斜部138aと前記第2側部と第3側部とがなす傾斜角は鈍角であり、
前記第4傾斜部138bと前記第2側部と第4側部とがなす傾斜角は鈍角であり、
前記第2リードフレームは、前記第6側部の両端に第7及び第8傾斜部148a、148bを含み、
前記第7傾斜部148aは、前記第6側部及び第7側部とがなす傾斜角が鈍角であり、
前記第8傾斜部148bは、前記第6側部及び第8側部とがなす傾斜角が鈍角であることを特徴とする、請求項1から6のいずれか一項 に記載の発光素子パッケージ。 - 前記第1リードフレームは、前記第1リードフレームの第2乃至第4側部130b、130c、130dに沿って前記第2乃至第4側部130b、130c、130dから凹状にリセスされた第1段差部136を含み、
前記第2リードフレームは、前記第2リードフレームの第6乃至第8側部140b、140c、140dに沿って前記第6乃至第8側部140b、140c、140dから凹状にリセスされた第2段差部146を含み、
前記第1段差部は、前記第1側部から離隔し、
前記第2段差部は、前記第5側部から離隔することを特徴とする、請求項1から7のいずれか一項 に記載の発光素子パッケージ。 - 請求項1乃至請求項8のいずれか一項に記載の発光素子パッケージを含むことを特徴とする、照明装置。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008091864A (ja) | 2006-09-08 | 2008-04-17 | Nichia Chem Ind Ltd | 発光装置 |
JP2008535237A (ja) | 2005-11-09 | 2008-08-28 | アルティ エレクトロニクス カンパニー リミテッド | 側面発光ダイオード及びその製造方法 |
JP2011119729A (ja) | 2009-12-01 | 2011-06-16 | Lg Innotek Co Ltd | 発光素子 |
JP3171592U (ja) | 2010-10-08 | 2011-11-10 | 復盛精密工業股▲ふん▼有限公司 | 発光ダイオードの電極の構造 |
JP2011249800A (ja) | 2010-05-24 | 2011-12-08 | Seoul Semiconductor Co Ltd | Ledパッケージ |
JP2013062338A (ja) | 2011-09-13 | 2013-04-04 | Toshiba Corp | 発光装置 |
JP2013222975A (ja) | 2012-04-18 | 2013-10-28 | Lextar Electronics Corp | 発光デバイスのパッケージ構造 |
JP2014057038A (ja) | 2012-09-13 | 2014-03-27 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明システム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100888236B1 (ko) | 2008-11-18 | 2009-03-12 | 서울반도체 주식회사 | 발광 장치 |
KR101064072B1 (ko) * | 2009-02-24 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US8610156B2 (en) * | 2009-03-10 | 2013-12-17 | Lg Innotek Co., Ltd. | Light emitting device package |
KR101591043B1 (ko) * | 2009-06-02 | 2016-02-02 | 엘지이노텍 주식회사 | 와이어 파손 방지용 led 패키지 구조 |
KR20120069290A (ko) | 2010-12-20 | 2012-06-28 | 삼성엘이디 주식회사 | 발광다이오드 패키지 |
WO2013013154A2 (en) * | 2011-07-21 | 2013-01-24 | Cree, Inc. | Light emitter device packages, components, and methods for improved chemical resistance and related methods |
KR101905535B1 (ko) * | 2011-11-16 | 2018-10-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 조명 장치 |
KR20130061588A (ko) * | 2011-12-01 | 2013-06-11 | 엘지이노텍 주식회사 | 발광소자 패키지 |
TWI553264B (zh) | 2014-05-23 | 2016-10-11 | 億光電子工業股份有限公司 | 承載支架及其製造方法以及從該承載支架所製得之發光裝置及其製造方法 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008535237A (ja) | 2005-11-09 | 2008-08-28 | アルティ エレクトロニクス カンパニー リミテッド | 側面発光ダイオード及びその製造方法 |
JP2008091864A (ja) | 2006-09-08 | 2008-04-17 | Nichia Chem Ind Ltd | 発光装置 |
JP2011119729A (ja) | 2009-12-01 | 2011-06-16 | Lg Innotek Co Ltd | 発光素子 |
JP2011249800A (ja) | 2010-05-24 | 2011-12-08 | Seoul Semiconductor Co Ltd | Ledパッケージ |
JP3171592U (ja) | 2010-10-08 | 2011-11-10 | 復盛精密工業股▲ふん▼有限公司 | 発光ダイオードの電極の構造 |
JP2013062338A (ja) | 2011-09-13 | 2013-04-04 | Toshiba Corp | 発光装置 |
JP2013222975A (ja) | 2012-04-18 | 2013-10-28 | Lextar Electronics Corp | 発光デバイスのパッケージ構造 |
JP2014057038A (ja) | 2012-09-13 | 2014-03-27 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明システム |
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