JP2011249800A - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
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- JP2011249800A JP2011249800A JP2011114543A JP2011114543A JP2011249800A JP 2011249800 A JP2011249800 A JP 2011249800A JP 2011114543 A JP2011114543 A JP 2011114543A JP 2011114543 A JP2011114543 A JP 2011114543A JP 2011249800 A JP2011249800 A JP 2011249800A
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- 230000003014 reinforcing effect Effects 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000003566 sealing material Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000000994 depressogenic effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Led Device Packages (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
【解決手段】本発明のLEDパッケージは、LEDチップと、前記LEDチップと電気的に接続され、互いに対向する領域上に隆起部をそれぞれ備える各リードフレームと、前記各リードフレームを支持し、前記第1の面を外部に露出させるハウジングとを備える。前記各リードフレームは、前記ハウジングの底面に対して水平な第1の面と、前記第1の面とは反対の第2の面とを備える。
【選択図】図3
Description
第2の継ぎ部373は、第2のリードフレーム32の上面321の露出した部分の間に設けられており、実装されたLEDチップ34は、第1のボンディングワイヤW1を介して、前記の上面321の露出部分の一つと接続される。
Claims (17)
- LEDチップと、
前記LEDチップと電気的に連結され、互いに対向する領域に隆起部をそれぞれ備える各リードフレームと、
前記各リードフレームを支持し、前記第1の面を外部に露出させるハウジングと、を備え、
前記各リードフレームは、前記ハウジングの底面に対して水平な第1の面と、前記第1の面とは反対の第2の面と、を備えるLEDパッケージ。 - 前記ハウジングは、前記第1の面を外部に露出させる外部ハウジングと、前記隆起部の少なくとも一部及び前記第2の面上の前記各リードフレームの一部を露出させる内部ハウジングと、を備えることを特徴とする、請求項1に記載のLEDパッケージ。
- 前記内部ハウジングは、互いに対向する前記各リードフレームの間を埋める補強部を備えることを特徴とする、請求項2に記載のLEDパッケージ。
- 前記内部ハウジングは、前記補強部からそれぞれ延長されて前記外部ハウジングとそれぞれ連結される少なくとも一つの継ぎ部を備えることを特徴とする、請求項2に記載のLEDパッケージ。
- 前記継ぎ部は第1の露出部を備えることを特徴とする、請求項4に記載のLEDパッケージ。
- 前記第1の露出部は、前記LEDチップの実装領域を備えることを特徴とする、請求項5に記載のLEDパッケージ。
- 前記第1の露出部は、平面上で四角形状に形成されることを特徴とする、請求項5に記載のLEDパッケージ。
- 前記LEDチップは、前記第1の露出部の少なくとも中央に実装されることを特徴とする、請求項7に記載のLEDパッケージ。
- 前記第1の露出部には、少なくとも一つの蛍光体を含む透光性樹脂が充填されることを特徴とする、請求項5に記載のLEDパッケージ。
- 前記内部ハウジングは、接合領域を露出させる第2の露出部が設けられることを特徴とする、請求項2に記載のLEDパッケージ。
- 前記第2の露出部にツェナー・ダイオードが実装されることを特徴とする、請求項10に記載のLEDパッケージ。
- 前記内部ハウジングは透光性樹脂を含むことを特徴とする、請求項2に記載のLEDパッケージ。
- 前記外部ハウジングと前記内部ハウジングは一体に射出成形されることを特徴とする、請求項2に記載のLEDパッケージ。
- 前記内部ハウジングは、前記外部ハウジングよりも低い高さで形成されることを特徴とする、請求項2又は13に記載のLEDパッケージ。
- 前記第1の面は、前記外部ハウジングの底面と同一平面上にあることを特徴とする、請求項2に記載のLEDパッケージ。
- 前記外部ハウジングに結合されるレンズ部をさらに含むことを特徴とする、請求項2に記載のLEDパッケージ。
- 前記隆起部はスタンピング工程によって形成されたことを特徴とする、請求項1に記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100048117A KR101719644B1 (ko) | 2010-05-24 | 2010-05-24 | Led패키지 |
KR10-2010-0048117 | 2010-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011249800A true JP2011249800A (ja) | 2011-12-08 |
JP5851720B2 JP5851720B2 (ja) | 2016-02-03 |
Family
ID=44971781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011114543A Active JP5851720B2 (ja) | 2010-05-24 | 2011-05-23 | Ledパッケージ |
Country Status (3)
Country | Link |
---|---|
US (5) | US8796710B2 (ja) |
JP (1) | JP5851720B2 (ja) |
KR (1) | KR101719644B1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101340029B1 (ko) | 2013-06-14 | 2013-12-18 | (주)버금기술 | 반도체 패키지용 리드프레임 및 그 조립체 |
TWI513068B (zh) * | 2013-07-12 | 2015-12-11 | Lite On Opto Technology Changzhou Co Ltd | 發光二極體結構、發光二極體結構的金屬支架、及承載座模組 |
JP2016021446A (ja) * | 2014-07-11 | 2016-02-04 | 日亜化学工業株式会社 | 半導体発光装置及びその製造方法 |
JPWO2017115862A1 (ja) * | 2015-12-28 | 2018-06-28 | アイリスオーヤマ株式会社 | Led照明装置 |
JP6994745B2 (ja) | 2015-11-27 | 2022-02-04 | スージョウ レキン セミコンダクター カンパニー リミテッド | 発光素子パッケージ及び照明装置 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101114719B1 (ko) * | 2010-08-09 | 2012-02-29 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
KR101871374B1 (ko) | 2012-04-09 | 2018-06-27 | 엘지이노텍 주식회사 | 발광 램프 |
DE102013202904A1 (de) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung |
KR102100936B1 (ko) | 2013-07-10 | 2020-04-16 | 서울바이오시스 주식회사 | 정전방전 보호 기능을 갖는 발광 다이오드 칩 |
US9583689B2 (en) * | 2013-07-12 | 2017-02-28 | Lite-On Opto Technology (Changzhou) Co., Ltd. | LED package |
EP3007219B1 (en) | 2014-01-17 | 2020-02-12 | Fuji Electric Co., Ltd. | Semiconductor module |
TWD167977S (zh) * | 2014-06-27 | 2015-05-21 | 隆達電子股份有限公司 | 發光二極體用導線架 |
KR20160106396A (ko) * | 2015-03-02 | 2016-09-12 | 주식회사 비케이테크놀로지 | 리드프레임 및 이를 포함하는 반도체 패키지 |
JP1553788S (ja) * | 2015-11-05 | 2016-07-11 | ||
JP1566953S (ja) * | 2016-04-28 | 2017-01-16 |
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US20080089072A1 (en) | 2006-10-11 | 2008-04-17 | Alti-Electronics Co., Ltd. | High Power Light Emitting Diode Package |
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2010
- 2010-05-24 KR KR1020100048117A patent/KR101719644B1/ko active IP Right Grant
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2011
- 2011-05-23 US US13/113,662 patent/US8796710B2/en active Active
- 2011-05-23 JP JP2011114543A patent/JP5851720B2/ja active Active
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2014
- 2014-07-14 US US14/330,518 patent/US9059386B2/en active Active
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2015
- 2015-06-15 US US14/739,733 patent/US9224935B2/en active Active
- 2015-12-28 US US14/980,047 patent/US9455388B2/en active Active
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2016
- 2016-09-26 US US15/276,545 patent/US9929330B2/en active Active
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WO2009072757A2 (en) * | 2007-12-03 | 2009-06-11 | Seoul Semiconductor Co., Ltd. | Slim led package |
KR20100003332A (ko) * | 2008-06-26 | 2010-01-08 | 서울반도체 주식회사 | 방열 구조를 갖는 led 패키지 |
Cited By (7)
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TWI513068B (zh) * | 2013-07-12 | 2015-12-11 | Lite On Opto Technology Changzhou Co Ltd | 發光二極體結構、發光二極體結構的金屬支架、及承載座模組 |
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JPWO2017115862A1 (ja) * | 2015-12-28 | 2018-06-28 | アイリスオーヤマ株式会社 | Led照明装置 |
CN108474546A (zh) * | 2015-12-28 | 2018-08-31 | 爱丽思欧雅玛株式会社 | Led照明装置 |
Also Published As
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US8796710B2 (en) | 2014-08-05 |
US9929330B2 (en) | 2018-03-27 |
JP5851720B2 (ja) | 2016-02-03 |
US9224935B2 (en) | 2015-12-29 |
US9059386B2 (en) | 2015-06-16 |
US20160111617A1 (en) | 2016-04-21 |
KR20110128592A (ko) | 2011-11-30 |
US20170012190A1 (en) | 2017-01-12 |
US20150318457A1 (en) | 2015-11-05 |
KR101719644B1 (ko) | 2017-04-04 |
US9455388B2 (en) | 2016-09-27 |
US20110284900A1 (en) | 2011-11-24 |
US20140319573A1 (en) | 2014-10-30 |
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