JP2008078500A - 光半導体装置及び光半導体装置の製造方法 - Google Patents
光半導体装置及び光半導体装置の製造方法 Download PDFInfo
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- JP2008078500A JP2008078500A JP2006257740A JP2006257740A JP2008078500A JP 2008078500 A JP2008078500 A JP 2008078500A JP 2006257740 A JP2006257740 A JP 2006257740A JP 2006257740 A JP2006257740 A JP 2006257740A JP 2008078500 A JP2008078500 A JP 2008078500A
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
【解決手段】光半導体装置1Aにおいて、凹部2aを有する基体2と、凹部2a内に設けられ、光を放射する発光素子3と、基体2に設けられて凹部2aの側面を覆い、発光素子3により放射された光が凹部2aの側面に入射することを抑える抑制部材4と、凹部2a内に設けられ、発光素子3を封止する透光性部材5とを備える。
【選択図】図2
Description
本発明の第1の実施の形態について図1乃至図7を参照して説明する。
本発明の第2の実施の形態について図8を参照して説明する。本発明の第2の実施の形態では、第1の実施の形態と異なる部分について説明する。なお、第2の実施の形態においては、第1の実施の形態で説明した部分と同一部分に同一符号を付し、その説明も省略する。
なお、本発明は、前述の実施の形態に限るものではなく、その要旨を逸脱しない範囲において種々変更可能である。
Claims (4)
- 凹部を有する基体と、
前記凹部内に設けられ、光を放射する発光素子と、
前記基体に設けられて前記凹部の側面を覆い、前記発光素子により放射された前記光が前記凹部の側面に入射することを抑える抑制部材と、
前記凹部内に設けられ、前記発光素子を封止する透光性部材と、
を備えることを特徴とする光半導体装置。 - 前記抑制部材は、前記発光素子により放射された前記光を反射することを特徴とする請求項1記載の光半導体装置。
- 前記抑制部材の一部は、前記基体に埋没していることを特徴とする請求項1又は2記載の光半導体装置。
- 凹部を有する基体の前記凹部の側面に光が入射することを抑える抑制部材を形成する工程と、
形成した前記抑制部材を前記凹部の側面を覆うように位置付け、前記基体を形成する工程と、
形成した前記基体の前記凹部内に、光を放射する発光素子を設ける工程と、
前記発光素子を設けた前記凹部内を透光性部材により封止する工程と、
を有することを特徴とする光半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006257740A JP4846498B2 (ja) | 2006-09-22 | 2006-09-22 | 光半導体装置及び光半導体装置の製造方法 |
US11/854,280 US7683394B2 (en) | 2006-09-22 | 2007-09-12 | Optical semiconductor device and method for manufacturing optical semiconductor device |
TW096135580A TW200834980A (en) | 2006-09-22 | 2007-09-21 | Optical semiconductor device and manufacturing method thereof |
CN200710152881A CN100576590C (zh) | 2006-09-22 | 2007-09-21 | 光半导体器件和光半导体器件的制造方法 |
KR1020070096418A KR100927077B1 (ko) | 2006-09-22 | 2007-09-21 | 광 반도체 장치 및 광 반도체 장치의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006257740A JP4846498B2 (ja) | 2006-09-22 | 2006-09-22 | 光半導体装置及び光半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008078500A true JP2008078500A (ja) | 2008-04-03 |
JP4846498B2 JP4846498B2 (ja) | 2011-12-28 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006257740A Expired - Fee Related JP4846498B2 (ja) | 2006-09-22 | 2006-09-22 | 光半導体装置及び光半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7683394B2 (ja) |
JP (1) | JP4846498B2 (ja) |
KR (1) | KR100927077B1 (ja) |
CN (1) | CN100576590C (ja) |
TW (1) | TW200834980A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010017790A1 (de) * | 2008-08-12 | 2010-02-18 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares, optoelektronisches halbleiterbauteil |
WO2011062148A1 (ja) * | 2009-11-19 | 2011-05-26 | 株式会社 明王化成 | 半導体用パッケージ及び放熱形リードフレーム |
JP2014533889A (ja) * | 2011-11-17 | 2014-12-15 | ルーメンス カンパニー リミテッド | 発光素子パッケージ及びそれを備えるバックライトユニット |
JP2016019001A (ja) * | 2014-07-08 | 2016-02-01 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2016019000A (ja) * | 2014-07-08 | 2016-02-01 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
US9647190B2 (en) | 2013-06-28 | 2017-05-09 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
JP2019079937A (ja) * | 2017-10-25 | 2019-05-23 | 日亜化学工業株式会社 | 発光装置、パッケージ及びそれらの製造方法 |
USRE47504E1 (en) | 2012-12-29 | 2019-07-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
WO2020045604A1 (ja) * | 2018-08-31 | 2020-03-05 | パナソニックIpマネジメント株式会社 | 半導体素子搭載用パッケージ及び半導体装置 |
Families Citing this family (12)
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WO2010029872A1 (ja) * | 2008-09-09 | 2010-03-18 | 昭和電工株式会社 | 発光装置、発光モジュール、表示装置 |
DE102009055786A1 (de) * | 2009-11-25 | 2011-05-26 | Osram Opto Semiconductors Gmbh | Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses |
DE102009058421A1 (de) | 2009-12-16 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil |
JP5528900B2 (ja) * | 2010-04-30 | 2014-06-25 | ローム株式会社 | 発光素子モジュール |
KR20120108437A (ko) * | 2011-03-24 | 2012-10-05 | 삼성전자주식회사 | 발광소자 패키지 |
JP2014011029A (ja) * | 2012-06-29 | 2014-01-20 | Toshiba Lighting & Technology Corp | 照明装置 |
CN102403418A (zh) * | 2011-11-09 | 2012-04-04 | 东莞勤上光电股份有限公司 | 一种大功率led的散热结构的制作方法 |
US8575645B2 (en) * | 2011-11-22 | 2013-11-05 | GEM Weltronics TWN Corporation | Thin multi-layer LED array engine |
CN103208488A (zh) * | 2012-01-12 | 2013-07-17 | 盈胜科技股份有限公司 | 薄型多层式阵列型发光二极管光引擎 |
JP6102187B2 (ja) | 2012-10-31 | 2017-03-29 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを用いた発光装置 |
JP6573356B2 (ja) * | 2015-01-22 | 2019-09-11 | 大口マテリアル株式会社 | リードフレーム |
CN107833903B (zh) * | 2016-09-15 | 2022-10-18 | 伊乐视有限公司 | 具有光管理系统的发光显示器 |
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Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010017790A1 (de) * | 2008-08-12 | 2010-02-18 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares, optoelektronisches halbleiterbauteil |
JP5864260B2 (ja) * | 2009-11-19 | 2016-02-17 | 住友化学株式会社 | 半導体用パッケージ |
WO2011062148A1 (ja) * | 2009-11-19 | 2011-05-26 | 株式会社 明王化成 | 半導体用パッケージ及び放熱形リードフレーム |
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JP2014533889A (ja) * | 2011-11-17 | 2014-12-15 | ルーメンス カンパニー リミテッド | 発光素子パッケージ及びそれを備えるバックライトユニット |
USRE47444E1 (en) | 2011-11-17 | 2019-06-18 | Lumens Co., Ltd. | Light emitting device package and backlight unit comprising the same |
USRE47504E1 (en) | 2012-12-29 | 2019-07-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
US9647190B2 (en) | 2013-06-28 | 2017-05-09 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
US9991432B2 (en) | 2013-06-28 | 2018-06-05 | Nichia Corporation | Light emitting apparatus |
US10305011B2 (en) | 2013-06-28 | 2019-05-28 | Nichia Corporation | Light emitting apparatus |
JP2016019000A (ja) * | 2014-07-08 | 2016-02-01 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2016019001A (ja) * | 2014-07-08 | 2016-02-01 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2019079937A (ja) * | 2017-10-25 | 2019-05-23 | 日亜化学工業株式会社 | 発光装置、パッケージ及びそれらの製造方法 |
JP7140956B2 (ja) | 2017-10-25 | 2022-09-22 | 日亜化学工業株式会社 | 発光装置、パッケージ及びそれらの製造方法 |
WO2020045604A1 (ja) * | 2018-08-31 | 2020-03-05 | パナソニックIpマネジメント株式会社 | 半導体素子搭載用パッケージ及び半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN100576590C (zh) | 2009-12-30 |
US20080210964A1 (en) | 2008-09-04 |
CN101150164A (zh) | 2008-03-26 |
JP4846498B2 (ja) | 2011-12-28 |
KR20080027195A (ko) | 2008-03-26 |
KR100927077B1 (ko) | 2009-11-13 |
US7683394B2 (en) | 2010-03-23 |
TW200834980A (en) | 2008-08-16 |
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