JP2016019001A - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
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- JP2016019001A JP2016019001A JP2015136432A JP2015136432A JP2016019001A JP 2016019001 A JP2016019001 A JP 2016019001A JP 2015136432 A JP2015136432 A JP 2015136432A JP 2015136432 A JP2015136432 A JP 2015136432A JP 2016019001 A JP2016019001 A JP 2016019001A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8585—Means for heat extraction or cooling being an interconnection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (14)
- 第1フレームと前記第1フレームの両側にそれぞれ配置された第2フレームを含むリードフレームと、
前記第1フレーム上に配置され、前記第2フレームと電気的に連結される発光素子と、
前記第1フレームと前記第2フレームとの間に配置された第1樹脂部及び前記リードフレームの外側面をカバーする第2樹脂部を含む樹脂部と、
を含み、
前記第1フレームの一端と前記第2フレームの一端は、前記第2樹脂部の外側面に配置された、発光素子パッケージ。 - 前記第1フレームの一端と前記第2フレームの一端は、前記第2樹脂部の外側面よりさらに突出した、請求項1に記載の発光素子パッケージ。
- 前記第1フレームの一端は、前記発光素子の温度を測定するTC(Thermal Calculator)端子である、請求項1または2に記載の発光素子パッケージ。
- 前記第1フレームの一端は、前記発光素子から発生した熱を放出する、請求項1ないし3のいずれか1項に記載の発光素子パッケージ。
- 前記第1樹脂部は、上面と底面を含み、
前記上面の幅は、前記底面の幅より狭い、請求項1ないし4のいずれか1項に記載の発光素子パッケージ。 - 前記第1樹脂部は、上面と底面を含み、
前記第1樹脂部の底面は、直線部と屈曲部を含み、
前記直線部の幅は、前記上面の幅よりさらに大きく、
前記屈曲部の幅は、前記直線部の幅よりさらに大きい、請求項1ないし5のいずれか1項に記載の発光素子パッケージ。 - 前記第1樹脂部の上面の幅は、0.3〜0.5mmである、請求項1ないし6のいずれか1項に記載の発光素子パッケージ。
- 前記第2樹脂部は、前記第2樹脂部の外側面に配置され、リードフレーム原型と結合する凹部を含み、
前記凹部の上部には、係止突起が配置された、請求項1ないし7のいずれか1項に記載の発光素子パッケージ。 - 前記リードフレーム上に配置され、前記発光素子が配置される中空部を有するリフレクタをさらに含み、
前記第2樹脂部は、前記リフレクタの外側面をカバーする壁部をさらに含む、請求項1ないし8のいずれか1項に記載の発光素子パッケージ。 - 前記壁部は、前記リフレクタの一部が挿入される溝部を有する、請求項9に記載の発光素子パッケージ。
- 前記壁部は、前記リフレクタの下面と前記第2フレームの上面との間に配置された絶縁層と、前記リフレクタの上面の上に配置された突出部を含む、請求項9に記載の発光素子パッケージ。
- 前記絶縁層の厚さは、0.1〜0.15mmである、請求項11に記載の発光素子パッケージ。
- 前記壁部は、前記壁部の上面の上に突出したガイド突出部を含む、請求項9ないし12のいずれか1項に記載の発光素子パッケージ。
- 前記樹脂部は、黒色の樹脂である、請求項1ないし13のいずれか1項に記載の発光素子パッケージ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140084907A KR102201199B1 (ko) | 2014-07-08 | 2014-07-08 | 발광 소자 패키지 |
KR1020140084908A KR102205471B1 (ko) | 2014-07-08 | 2014-07-08 | 발광 소자 패키지 |
KR10-2014-0084908 | 2014-07-08 | ||
KR10-2014-0084907 | 2014-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016019001A true JP2016019001A (ja) | 2016-02-01 |
JP6671117B2 JP6671117B2 (ja) | 2020-03-25 |
Family
ID=53540676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015136432A Active JP6671117B2 (ja) | 2014-07-08 | 2015-07-07 | 発光素子パッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9508906B2 (ja) |
EP (1) | EP2966697B1 (ja) |
JP (1) | JP6671117B2 (ja) |
CN (1) | CN105261686B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10867894B2 (en) | 2018-10-11 | 2020-12-15 | Asahi Kasei Microdevices Corporation | Semiconductor element including encapsulated lead frames |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6765804B2 (ja) * | 2014-11-28 | 2020-10-07 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP6361645B2 (ja) | 2015-12-22 | 2018-07-25 | 日亜化学工業株式会社 | 発光装置 |
CN107195751B (zh) * | 2016-03-14 | 2020-01-14 | 光宝光电(常州)有限公司 | 发光二极管封装结构 |
EP3223322B1 (en) * | 2016-03-25 | 2019-05-01 | LG Innotek Co., Ltd. | Light emitting device package |
TWI747690B (zh) * | 2020-12-28 | 2021-11-21 | 友達光電股份有限公司 | 顯示裝置及其製作方法 |
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JPH0983018A (ja) * | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | 発光ダイオードユニット |
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2015
- 2015-07-07 JP JP2015136432A patent/JP6671117B2/ja active Active
- 2015-07-08 CN CN201510397551.0A patent/CN105261686B/zh active Active
- 2015-07-08 EP EP15175953.7A patent/EP2966697B1/en not_active Not-in-force
- 2015-07-08 US US14/794,476 patent/US9508906B2/en active Active
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JPH0983018A (ja) * | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | 発光ダイオードユニット |
JP2002196427A (ja) * | 2000-12-22 | 2002-07-12 | Konica Corp | 露光装置および画像形成装置 |
JP2007019505A (ja) * | 2005-07-04 | 2007-01-25 | Samsung Electro-Mechanics Co Ltd | 改善した側壁反射構造を有する側面型発光ダイオード |
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JP2007288198A (ja) * | 2006-04-17 | 2007-11-01 | Samsung Electro-Mechanics Co Ltd | 発光ダイオードパッケージ及びその製造方法 |
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JP2008078500A (ja) * | 2006-09-22 | 2008-04-03 | Toshiba Corp | 光半導体装置及び光半導体装置の製造方法 |
JP2008112908A (ja) * | 2006-10-31 | 2008-05-15 | Asahi Glass Co Ltd | 発光素子用封入剤および発光素子 |
JP2010123908A (ja) * | 2008-11-18 | 2010-06-03 | Seoul Semiconductor Co Ltd | 発光装置 |
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WO2011052502A1 (ja) * | 2009-10-29 | 2011-05-05 | 京セラ株式会社 | 発光装置 |
JP2013514641A (ja) * | 2009-12-16 | 2013-04-25 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品のハウジングの製造方法、ハウジング、およびオプトエレクトロニクス半導体部品 |
JP2012028744A (ja) * | 2010-06-22 | 2012-02-09 | Panasonic Corp | 半導体装置用パッケージおよびその製造方法ならびに半導体装置 |
JP2012023184A (ja) * | 2010-07-14 | 2012-02-02 | Sharp Corp | 発光装置 |
US20120074451A1 (en) * | 2010-09-27 | 2012-03-29 | Lite-On Technology Corpration | Lead frame structure, a packaging structure and a lighting unit thereof |
JP2012094787A (ja) * | 2010-10-29 | 2012-05-17 | Panasonic Corp | 光半導体装置およびそれに用いる光半導体装置用パッケージならびにこれらの製造方法 |
JP2013041950A (ja) * | 2011-08-12 | 2013-02-28 | Sharp Corp | 発光装置 |
JP2013251384A (ja) * | 2012-05-31 | 2013-12-12 | Seika Sangyo Kk | 発光装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10867894B2 (en) | 2018-10-11 | 2020-12-15 | Asahi Kasei Microdevices Corporation | Semiconductor element including encapsulated lead frames |
Also Published As
Publication number | Publication date |
---|---|
CN105261686B (zh) | 2019-05-14 |
EP2966697A1 (en) | 2016-01-13 |
EP2966697B1 (en) | 2018-09-12 |
US9508906B2 (en) | 2016-11-29 |
JP6671117B2 (ja) | 2020-03-25 |
US20160013377A1 (en) | 2016-01-14 |
CN105261686A (zh) | 2016-01-20 |
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