WO2006016398A1 - 発光装置および発光装置の製造方法 - Google Patents
発光装置および発光装置の製造方法 Download PDFInfo
- Publication number
- WO2006016398A1 WO2006016398A1 PCT/JP2004/011457 JP2004011457W WO2006016398A1 WO 2006016398 A1 WO2006016398 A1 WO 2006016398A1 JP 2004011457 W JP2004011457 W JP 2004011457W WO 2006016398 A1 WO2006016398 A1 WO 2006016398A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lead
- light emitting
- electrode
- emitting element
- light
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 90
- 238000000034 method Methods 0.000 title claims description 79
- 230000008569 process Effects 0.000 title claims description 31
- 239000011347 resin Substances 0.000 claims description 141
- 229920005989 resin Polymers 0.000 claims description 141
- 239000000463 material Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 65
- 239000004065 semiconductor Substances 0.000 claims description 46
- 238000007789 sealing Methods 0.000 claims description 41
- 238000005452 bending Methods 0.000 claims description 35
- 239000004020 conductor Substances 0.000 claims description 31
- 238000000465 moulding Methods 0.000 claims description 19
- 230000000149 penetrating effect Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- WABPQHHGFIMREM-FTXFMUIASA-N lead-202 Chemical compound [202Pb] WABPQHHGFIMREM-FTXFMUIASA-N 0.000 description 85
- WABPQHHGFIMREM-VENIDDJXSA-N lead-201 Chemical compound [201Pb] WABPQHHGFIMREM-VENIDDJXSA-N 0.000 description 83
- 238000010586 diagram Methods 0.000 description 59
- 229910001128 Sn alloy Inorganic materials 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 10
- 239000007769 metal material Substances 0.000 description 10
- 238000004080 punching Methods 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
Classifications
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
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- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
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Definitions
- Light emitting device and method for manufacturing light emitting device are Light emitting device and method for manufacturing light emitting device
- the present invention relates to a light emitting device and a method for manufacturing the same, and more particularly, to a light emitting element provided with a first electrode and a second electrode on the same main surface of a substrate.
- the present invention relates to a technology that is effective when applied to a light-emitting device manufactured by mounting on a card frame.
- a light emitting device using a light emitting element such as an LED (Light Emitting Diode) chip or an LD (Laser Diode) chip
- the first lead of the lead frame and the first electrode (n electrode) of the light emitting element are electrically connected, and the periphery of the light emitting element is sealed with a transparent resin, and then the first lead and There is a light emitting device that manufactures the second lead by separating the lead frame force.
- either the first lead or the second lead of the lead frame is formed into a cup shape having an internal space of a truncated cone shape, an elliptical truncated cone shape, or a concave mirror shape, for example.
- the light emitting element may be mounted on the bottom surface portion of the cup-shaped portion (hereinafter referred to as the cup portion). In this way, light emitted from the side surface of the light emitting element in the direction along the mounting surface can be reflected by the concave surface of the cup portion and condensed in a predetermined direction, improving luminous efficiency. To do.
- the light emitting element includes, for example, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and other semiconductor layers involved in light emission stacked on a main surface of a substrate via a buffer layer. ing.
- the first electrode and the second electrode are roughly provided in two ways.
- a semiconductor layer related to the light emission of the substrate is laminated.
- a first electrode (n electrode) is provided on the back surface of the main surface
- a second electrode (p electrode) is provided on the p-type semiconductor layer.
- the other part of the p-type semiconductor layer and the light emitting layer stacked on the substrate is removed to expose the n-type semiconductor layer, and a first electrode is provided on the exposed n-type semiconductor layer,
- a second electrode is provided on the p-type semiconductor layer.
- the amount of heat generated by the light-emitting layer of the light-emitting element tends to increase as the luminance of the light-emitting element increases. Therefore, when the light emitting element is mounted on the cup portion, the second electrode (p electrode) faces the bottom surface of the cup portion so that the distance between the light emitting layer and the bottom surface of the cup portion is reduced. It has come to be implemented. At this time, if the first electrode (n electrode) is provided on the back surface of the main surface on which the semiconductor layers involved in light emission of the substrate are stacked, the first electrode and the first lead are: Electrically connected by bonding wire.
- the first electrode is provided on the n-type semiconductor layer, for example, a metal layer with an insulating layer interposed is provided in a partial region of the bottom surface of the cup portion.
- the first electrode and the metal layer are electrically connected.
- the first electrode and the first lead are electrically connected by electrically connecting the metal layer and the first lead with a bonding wire (see, for example, Patent Document 1 and Patent Document 2). .)
- a substrate that transmits light such as sapphire
- the light emitting element emits light only by light emitted from the side surface of the light emitting element.
- Laminar force Light emitted to the substrate side can also be emitted to the outside of the light emitting element. Therefore, if the second electrode (p electrode) is mounted facing the bottom surface of the cup part, the light emitted from the substrate side and the light reflected by the concave surface of the cup part are collected. The light can be output to the outside of the light emitting device, and the light emission efficiency is further improved.
- Patent Document 1 JP-A-6-314822
- Patent Document 2 Japanese Patent Laid-Open No. 11-251645 Disclosure of the Invention Problems to be Solved by the Invention
- the problem to be solved by the present invention is that, as described above, one electrode of the light-emitting element is electrically connected to the cup portion, and the other electrode is connected to a lead and a bond outside the cup portion.
- the bonding wire When electrically connected by an ing wire, part of the light emitted from the light emitting element is blocked by the bonding wire, and the shape of the bonding wire is reflected in the light output from the light emitting device. Shadows and light unevenness occur, resulting in a decrease in luminous efficiency.
- a through hole or a notch is provided in the mount portion of the lead frame, and the n electrode of the light emitting element is placed on the through hole or the notch.
- a mounting method is conceivable in which the p electrode and the mount part are electrically connected so that the lead is electrically connected to the n electrode and the mount part with a bonding wire (for example, , See JP 2004-79619 A).
- the bonding wire force is drawn out to the back surface of the surface of the mount portion on which the light emitting element is mounted through the through hole or notch, and is electrically connected to the lead.
- the bonding wire does not block the light emitted from the side surface of the light emitting element in the direction along the mounting surface or the light emitted through the substrate, resulting in a decrease in light emission efficiency due to shadows or uneven light. Can be prevented.
- An object of the present invention is to provide a shadow or light in which a part of the light emitted from the light emitting element is blocked by the bonding wire and the shape of the bonding wire is reflected on the light output from the light emitting device.
- the object is to provide a technology capable of preventing the occurrence of unevenness and lowering the luminous efficiency.
- Another object of the present invention is to emit light by shadows or uneven light reflecting the shape of the bonding wire. It is an object of the present invention to provide a technique capable of preventing a reduction in efficiency and miniaturizing a light emitting device.
- a plurality of types of semiconductor layers involved in light emission are stacked on one main surface of a substrate, and the first electrode and the second electrode are disposed on the main surface side of the substrate on which the semiconductor layers are stacked.
- a light emitting element provided with: a first lead electrically connected to the first electrode of the light emitting element; a second lead electrically connected to the second electrode of the light emitting element; A transparent resin that seals the periphery, and the lead of either the first lead or the second lead extends upward from a connection surface with the electrode of the light emitting element around the light emitting element, and
- the first lead and the second lead are respectively the first electrode and the light-emitting element.
- the part connected to the second electrode is on the connection surface side
- the first electrode and the second electrode of the light emitting element are bent and formed so as to face the first lead and the second lead, respectively, and are electrically connected by a bonding material, respectively.
- the mirror portion is a cup portion having an open bottom surface formed by molding an end portion of either the first lead or the second lead opposite to the portion connected to the electrode of the light emitting element.
- the first feature is that the light emitting element is bent and provided so as to be accommodated in the internal space of the cup portion.
- a plurality of types of semiconductor layers involved in light emission are stacked on one main surface of the substrate, and the first electrode and the first electrode are formed on the main surface side of the substrate on which the semiconductor layers are stacked.
- a light emitting device provided with two electrodes, a first lead electrically connected to the first electrode of the light emitting device, a second lead electrically connected to the second electrode of the light emitting device,
- a transparent resin that seals the periphery of the light emitting element, and the lead of either the first lead or the second lead is above the light emitting element and above the connection surface with the electrode of the light emitting element.
- the reflecting mirror portion is the first lead or the second lead.
- One of the leads is connected to the electrode of the light emitting element Minute of the outer periphery
- the lead provided with the reflecting mirror portion is provided with an opening penetrating from the connection surface to the back surface in the vicinity of the portion connected to the electrode of the light emitting element.
- the other lead different from the lead provided with the reflecting mirror portion is such that the portion connected to the electrode of the light emitting element passes through the opening of the lead provided with the reflecting mirror portion.
- the lead provided with the reflector part is present in the internal space of the cup part formed by the connection part with the electrode of the light-emitting element and the reflector part, and the first electrode and the second electrode of the light-emitting element are the
- the second feature is that any force will be face-to-face and electrically connected by a bonding material.
- a plurality of types of semiconductor layers involved in light emission are stacked on one main surface of the substrate, and the first electrode and the first electrode are formed on the main surface side of the substrate on which the semiconductor layers are stacked.
- a light emitting device provided with two electrodes, a first lead electrically connected to the first electrode of the light emitting device, a second lead electrically connected to the second electrode of the light emitting device,
- a transparent resin that seals the periphery of the light emitting element, and the lead of either the first lead or the second lead is above the light emitting element and above the connection surface with the electrode of the light emitting element.
- the light emitting device is provided with a reflecting mirror portion that extends and becomes farther away from the center of the light emitting element as the distance from the connection surface increases.
- one of the electrodes is arranged around the other electrode.
- the reflector portion is provided in an annular shape on the first lead.
- the outer periphery of the portion of either one of the second leads connected to the electrode of the light emitting element is bent to the connection surface side, and the lead provided with the reflecting mirror is An opening penetrating from the connection surface to the back surface is provided in an inner region of a portion connected to the annular electrode of the light emitting element, and the annular electrode of the light emitting element includes a lead provided with the reflecting mirror portion and Oppositely connected by a bonding material so as to surround the opening of the lead provided with the reflecting mirror portion, another lead different from the lead provided with the reflecting mirror portion is connected to the electrode of the light emitting element. A portion that exists in the vicinity of the opening of the lead provided with the reflecting mirror portion, and that the other lead and the electrode of the light emitting element are connected by a bonding wire passing through the opening.
- a plurality of types of semiconductor layers involved in light emission are stacked on one main surface of the substrate, and the first electrode and the first electrode are formed on the main surface side of the substrate on which the semiconductor layers are stacked. 2 electric A light emitting element provided with a pole; a first lead electrically connected to the first electrode of the light emitting element; a second lead electrically connected to the second electrode of the light emitting element; and the light emitting element.
- a transparent resin for sealing the periphery of the element, and the lead of either the first lead or the second lead extends upward from the connection surface with the electrode of the light emitting element, around the light emitting element,
- the reflecting mirror portion is the first lead or the second lead.
- One of the leads is provided by bending the outer peripheral portion of the portion connected to the electrode of the light emitting element toward the connection surface, and the lead provided with the reflecting mirror portion is connected to the electrode of the light emitting element.
- Another lead different from the lead provided with the reflecting mirror portion is provided with an opening, and the lead of the lead provided with the reflecting mirror portion from the opening of the lead provided with the reflecting mirror portion.
- Columnar conductors projecting into the internal space of the cup part, which is a connection part with the electrode of the light emitting element and the reflecting mirror part, and the first electrode and the second electrode of the light emitting element are connected to any force of each of the leads.
- the fourth feature is that they face each other and are electrically connected by bonding materials.
- the light-emitting device of the present invention blocks light from a bonding wire or the like in an optical path of light emitted from the light-emitting element and reflected by the reflecting mirror portion or light emitted from the light-emitting element through the substrate. There is no thing. For this reason, it is possible to prevent the light output from the light emitting device from causing shadows and uneven light and lowering the light emission efficiency.
- the transparent resin is provided only in the internal space and the through hole of the lead provided with the reflective portion, in the light emitting device having the fourth feature.
- the external dimensions of the light emitting device are almost equal to the dimensions of the cup portion, and the device can be miniaturized.
- the portion of each lead connected to the electrode of the light-emitting element is connected from the connection region to the outside of the connection region.
- the bonding material for electrically connecting the electrode and the lead of the light emitting element by providing a plurality of grooves extending or intersecting or branching in the connection region. It is possible to easily prevent a short circuit between the electrodes by letting the joining material provided on the electrode escape into the groove.
- a fluorescent material or a wavelength converter is provided in an internal space of the cup portion of the lead provided with the reflecting mirror portion.
- a step of forming a lead pattern having the first lead and the second lead on the conductor plate and the lead pattern are formed.
- a portion of the conductor plate (lead frame) connected to the electrode of the light emitting element of the first lead and the second lead is bent and molded, and the lead of either the first lead or the second lead is formed.
- the step between the first electrode and the second electrode of the light emitting element is relaxed by bending the first lead and the second lead.
- the step between the first electrode and the second electrode is performed.
- the step can be eased and the manufacturing cost can be reduced. can do
- a step of forming a lead pattern having the first lead and the second lead on the conductor plate and the lead pattern are formed.
- the portion of the conductor plate (lead frame), which has either the first lead or the second lead, to be connected to the electrode of the light emitting element is molded into a cup shape and the light emitting element is formed.
- the reflector portion is provided through the opening of the lead provided with the reflector portion through a portion of another lead different from the lead forming the reflector portion and connected to the electrode of the light emitting element.
- the lead so as to exist in the internal space of the cup portion formed by the connection portion of the lead to the electrode of the light emitting device and the reflecting mirror portion, and housing the light emitting device in the internal space of the reflecting mirror portion,
- the first electrode of the light emitting element and the first lead, the second electrode of the light emitting element and the second lead are electrically connected using a bonding material, and the periphery of the light emitting element is made of a transparent resin. Sealing the first lead and the first lead
- the step of cutting the portion of the second lead that protrudes from the transparent resin into individual pieces may be performed. At this time, the step between the first electrode and the second electrode of the light emitting element is the first lead and the second electrode.
- the step of eliminating the step between the first electrode and the second electrode or the step on the first lead or the second lead is relaxed. Compared with the manufacturing method of forming a solder film, the step can be easily reduced and the manufacturing cost can be reduced.
- a step of forming a lead pattern having the first lead and the second lead on the conductor plate, and a conductor plate on which the lead pattern is formed In the lead frame, the portion of the lead of either the first lead or the second lead that is connected to the electrode of the light emitting element is molded into a cup shape around the portion that is connected to the electrode of the light emitting element.
- a step of forming a reflecting mirror portion and forming an opening penetrating from the connection surface to the back surface in the vicinity of a portion connected to the electrode of the light emitting element, and a lead different from the lead on which the reflecting mirror portion is formed A step of bending the lead to be connected to the electrode of the light emitting element so that the lead is in the vicinity of the opening of the lead provided with the reflecting mirror portion; of A light-emitting element in which an electrode is provided in a ring shape around the other electrode is accommodated, and the ring-shaped electrode of the light-emitting element and the lead forming the reflecting mirror portion are disposed, and the ring-shaped electrode surrounds the opening.
- the step between the first electrode and the second electrode Compared with a manufacturing method in which a process for eliminating the step is performed or a solder film for reducing a step is formed on the first lead or the second lead, the step is easily reduced and the manufacturing cost is reduced. Can be reduced.
- a step of forming a lead pattern having either the first lead or the second lead on the conductor plate for example, a step of forming a lead pattern having either the first lead or the second lead on the conductor plate;
- the lead of the formed conductor plate is molded into a cup shape to form a reflecting mirror portion around the portion connected to the electrode of the light emitting element, and connected to the electrode of the light emitting element.
- the columnar A step of electrically connecting an electrode exposed in an opening of a lead forming the reflector portion of the light-emitting element, a step of sealing the periphery of the light-emitting element with a transparent resin, and the reflector portion And a step of cutting the portion connecting the reflecting mirror portion and the lead frame into individual pieces.
- the transparent resin is formed only in the internal space and the opening of the reflecting mirror portion. May be. In this way, the outer dimensions of the light emitting device are substantially equal to the outer dimensions of the leads molded into the cup shape, and the device can be miniaturized.
- a step of forming a plurality of grooves extending outward and intersecting or branching in the connection region may be performed.
- a bonding material for connecting the electrode of the light emitting element and the lead is provided on the electrode of the light emitting element, when the bonding material melts, excess bonding material flows into the groove, It is possible to reduce the amount of the bonding material spreading outside the connection region. For this reason, it is possible to prevent a short circuit or the like due to the bonding material spreading outside the connection region.
- the step of sealing with the transparent resin may include a fluorescent light in an internal space of the reflecting mirror unit.
- a step of filling a resin mixed with a material or a wavelength conversion material, and a step of sealing the periphery of the resin mixed with the fluorescent material or the wavelength conversion material with another transparent resin may be performed.
- FIG. 1 is a schematic diagram showing a schematic configuration of a light emitting device of Example 1 according to the present invention, and is a plan view when the light emitting device is viewed from the light output direction.
- FIG. 2 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 1 according to the present invention, and is a cross-sectional view taken along line AA ′ of FIG.
- FIG. 3 is a schematic diagram showing a schematic configuration of the light emitting device of Example 1 according to the present invention, and is an enlarged view around the light emitting element of FIG.
- FIG. 4 is a schematic diagram showing a schematic configuration of the light emitting device of Example 1 according to the present invention, and is a diagram for explaining the function and effect of the light emitting device.
- FIG. 5 is a schematic view for explaining the method for manufacturing the light-emitting device of Example 1, and is a plan view of the lead frame used for manufacturing the light-emitting device as viewed from the element mounting surface side.
- FIG. 6 is a schematic view for explaining the method for manufacturing the light emitting device of the first embodiment, and is a cross-sectional view taken along the line BB ′ of FIG.
- FIG. 7 is a schematic view for explaining the method for manufacturing the light emitting device of the first embodiment, and is a cross-sectional view of a step of molding the element mounting portion and the reflecting mirror portion.
- FIG. 8 is a schematic view for explaining the method for manufacturing the light emitting device of the first embodiment, and is a cross-sectional view of the step of bending the reflector portion.
- FIG. 9 is a schematic view for explaining the method for manufacturing the light emitting device of the first embodiment, and is a cross-sectional view of the process of bending the reflector portion.
- FIG. 10 is a schematic view for explaining the method for manufacturing the light emitting device of the first embodiment, and is a cross-sectional view of the step of bending the reflecting mirror portion.
- FIG. 11 is a schematic view for explaining the method for manufacturing the light-emitting device of Example 1, and is a cross-sectional view of a process for mounting a light-emitting element.
- FIG. 12 is a schematic view for explaining the method for manufacturing the light-emitting device of Example 1, and is a cross-sectional view of the step of sealing with a transparent resin.
- FIG. 13 is a schematic diagram for explaining an application example of the light-emitting device of the first embodiment, and is a cross-sectional view showing a configuration example of a light-emitting device in which a reflecting material is filled with a fluorescent material.
- FIG. 14 is a schematic diagram for explaining an application example of the light-emitting device of Example 1, and is a diagram showing an example of a method for manufacturing the light-emitting device shown in FIG.
- FIG. 15 is a schematic diagram for explaining an application example of the light emitting device of the first embodiment, and is a diagram for explaining problems in the manufacturing method shown in FIG.
- FIG. 16 is a schematic diagram for explaining an application example of the light emitting device of the first embodiment, and is a diagram showing an example of a method for solving the problem shown in FIG.
- FIG. 17 is a schematic diagram for explaining an application example of the light emitting device of the first embodiment, and is a diagram showing an example of a method for solving the problem shown in FIG.
- FIG. 18 is a schematic diagram for explaining an application example of the light emitting device of the first embodiment, and is a diagram showing an example of a method for solving the problem shown in FIG.
- FIG. 19 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 2 according to the present invention, and is a plan view when the light-emitting device is viewed from the light output direction.
- FIG. 20 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 2 according to the present invention, and is a cross-sectional view taken along the line CC ′ of FIG.
- FIG. 21 is a schematic view for explaining the method for manufacturing the light emitting device of the second embodiment, and is a plan view of the lead frame used for manufacturing the light emitting device as viewed from the element mounting surface side. 22]
- FIG. 22 is a schematic diagram for explaining the manufacturing method of the light-emitting device of Example 2, and is a cross-sectional view taken along the line DD ′ of FIG.
- FIG. 23 is a schematic diagram for explaining a method of manufacturing the light emitting device of the second embodiment, and is a cross-sectional view of a step of forming a force-up portion.
- FIG. 24 is a schematic view for explaining the method for manufacturing the light emitting device of the second embodiment, and is a plan view of a step of bending the first lead.
- FIG. 25 is a schematic diagram for explaining the method for manufacturing the light emitting device of the second embodiment, and is a cross-sectional view taken along the line EE ′ of FIG.
- FIG. 26 is a schematic diagram for explaining the method for manufacturing the light-emitting device of Example 2, and is a cross-sectional view of the process for mounting the light-emitting element.
- FIG. 27 is a schematic view for explaining the method for manufacturing the light-emitting device of Example 2, and is a cross-sectional view of the step of sealing with a transparent resin.
- FIG. 28 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 3 according to the present invention, and is a plan view when the light-emitting device is viewed from the light output direction.
- FIG. 29 is a schematic diagram showing a schematic configuration of the light emitting device of Example 3 according to the present invention, and is a cross-sectional view taken along the line FF ′ of FIG.
- FIG. 30 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 3 according to the present invention, and is a plan view when the light-emitting element is viewed from the electrode surface side.
- FIG. 31 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 3 according to the present invention, and is a cross-sectional view taken along the line GG ′ of FIG.
- FIG. 32 is a schematic diagram for explaining the method for manufacturing the light emitting device of the third embodiment, and is a plan view of the lead frame used for manufacturing the light emitting device as viewed from the element mounting surface side.
- FIG. 33 is a schematic diagram for explaining the method for manufacturing the light emitting device of the third embodiment, and is a cross-sectional view of the process of connecting the light emitting element to the second electrode and the second lead.
- FIG. 34 is a schematic view for explaining the method for manufacturing the light emitting device of the third embodiment, and is a plan view of a step of bending the first lead.
- FIG. 35 is a schematic diagram for explaining the method for manufacturing the light emitting device of the third embodiment, and is a cross-sectional view of the process of connecting the first electrode of the light emitting element and the first lead.
- FIG. 36 is a schematic diagram for explaining another function and effect of the light emitting device of the third embodiment, and is a cross-sectional view of the process of filling the cup portion with a resin mixed with a fluorescent material.
- FIG. 37 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 4 according to the present invention, and is a plan view when the light-emitting device is viewed from the light output direction.
- FIG. 38 is a schematic diagram showing a schematic configuration of the light-emitting device of Example 4 according to the present invention, and is a cross-sectional view taken along line K-K ′ in FIG.
- FIG. 39 is a schematic view for explaining the method for manufacturing the light-emitting device of Example 4, and is a plan view of the lead frame used for manufacturing the light-emitting device as seen from the element mounting surface side.
- FIG. 40 is a schematic diagram for explaining the manufacturing method of the light emitting device of the fourth embodiment, and is a cross-sectional view taken along line L—L ′ in FIG. 39.
- FIG. 41 is a schematic diagram for explaining the manufacturing method of the light emitting device of the fourth embodiment, and is a plan view of a process of molding the second lead (cup-shaped lead).
- FIG. 42 is a schematic diagram for explaining the manufacturing method of the light-emitting device of Example 4, and is a cross-sectional view taken along the line MM ′ of FIG.
- FIG. 43 is a schematic diagram for explaining the method for manufacturing the light-emitting device of Example 4, and is a cross-sectional view of the process of connecting the second electrode of the light-emitting element and the second lead.
- FIG. 44 is a schematic view for explaining the manufacturing method of the light-emitting device of Example 4, and is a cross-sectional view of the step of connecting the first electrode and the first lead of the light-emitting element.
- FIG. 45 is a schematic diagram for explaining the manufacturing method of the light-emitting device of Example 4, and is a cross-sectional view of the process of sealing the periphery of the light-emitting element.
- FIG. 46 is a schematic diagram for explaining the manufacturing method of the light emitting device of the fourth embodiment, and is a sectional view of the finishing process.
- FIG. 47 is a schematic diagram for explaining one of the effects of the light emitting device of the fourth embodiment.
- FIG. 48 illustrates an application example of the method for manufacturing the light emitting device of the fourth embodiment. It is a schematic diagram for doing, and is a figure which shows an example in the case of filling resin which mixed the fluorescent material.
- FIG. 49 is a schematic diagram for explaining an application example of the manufacturing method of the light emitting device of the fourth embodiment, and shows an example in the case of filling the transparent resin into a convex lens shape.
- FIG. 50 is a schematic diagram for explaining an application example of the manufacturing method of the light emitting device of the fourth embodiment, and shows an example of molding a transparent resin so that the outer shape is a rectangular parallelepiped shape. so is there.
- FIG. 51 is a schematic view showing an application example of the light emitting device of the fourth embodiment, and is a plan view when the display device is viewed from the display surface side.
- FIG. 52 is a schematic diagram showing an application example of the light emitting device of the fourth embodiment, and is a cross-sectional view taken along the line P—P ′ of FIG. 51.
- FIG. 53 is a schematic view showing an application example of the light-emitting device of Example 4, and is an enlarged view of one light-emitting device of FIG. 52.
- FIG. 54 is a schematic diagram for explaining a first application example of the light-emitting device of Example 4, and is a plan view when the light-emitting device is viewed from the light output direction.
- FIG. 55 is a schematic diagram for explaining a first application example of the light-emitting device of Example 4, and is a rear view of FIG. 54.
- FIG. 56 is a schematic diagram for explaining a second application example of the light-emitting device of Example 4, and is a plan view when the light-emitting device is viewed from the light output direction.
- FIG. 57 is a schematic diagram for explaining a second application example of the light-emitting device of Example 4, and is a rear view of FIG. 56.
- FIG. 58 is a schematic diagram for explaining a second application example of the light-emitting device of Example 4, and is a plan view showing a modification of the light-emitting device shown in FIG. 56.
- FIG. 59 is a schematic diagram for explaining a second application example of the light emitting device of Example 4, and is a rear view of FIG. 58.
- FIG. 60 is a schematic diagram for explaining a third application example of the light-emitting device of Example 4, and is a plan view when the light-emitting device is viewed from the light output direction.
- FIG. 61 is a schematic diagram for explaining a third application example of the light-emitting device of Example 4, and is a back view of FIG.
- the bottom surface of the cup portion is opened, one electrode of the light emitting element is electrically connected to the force cup portion, and the other electrode is used in the opening portion of the cup portion. Then, by electrically connecting to the lead that has passed through the internal space from the outside of the cup portion, each electrode of the light emitting device and the lead can be electrically connected without using a bonding wire, and the bonding wire Prevents the occurrence of shadows and uneven light reflecting the shape, and improves luminous efficiency.
- the lead outside the cup part and the electrode of the light emitting element are connected by a bonding wire passing through the opening of the cup part.
- the bonding wire By electrically connecting, the light output to the outside of the light emitting device A part of the wire is blocked by the bonding wire to prevent shadows and light unevenness, thereby improving the light emission efficiency.
- a conductor electrically insulated from the cup portion is provided in an opening on the bottom surface of the cup portion, and one electrode of the light emitting element and the cup portion are electrically connected to each other, and the light emission
- each electrode of the light emitting device and the lead are electrically connected without using a bonding wire, and a shadow or light reflecting the shape of the bonding wire is used. Prevents unevenness, improves luminous efficiency, and reduces the size of the light emitting device.
- FIG. 1 to 4 are schematic views showing a schematic configuration of the light emitting device of Example 1 according to the present invention.
- FIG. 1 is a plan view when the light emitting device is viewed from the light output direction
- FIG. FIG. 1 is a cross-sectional view taken along the line AA ′ in FIG. 1
- FIG. 3 is an enlarged view of the periphery of the light emitting element (LED chip) in FIG. 2, and FIG.
- 1 to 3 (here, the light emitting element If, the first lead 201f, the suspension lead 201af, 201b is a reflecting mirror part, 202 is a second lead, and 3 is a transparent resin.
- 101 is a substrate
- 102 is a buffer layer
- 103 is a semiconductor layer involved in light emission
- 104 is a first electrode
- 105 is a second electrode
- 4 is a bonding material.
- the light-emitting device of Example 1 includes a light-emitting element 1 and a first lead 201 electrically connected to the first electrode 104 of the light-emitting element 1.
- a second lead 202 electrically connected to the second electrode 105 of the light emitting element 1 and a transparent resin 3 for sealing the periphery of the light emitting element 1 are configured.
- the suspension leads 201a as shown in FIG.
- the light emitting element 1 is an element such as an LED chip or an LD chip, for example, and as shown in FIG. 3, a semiconductor involved in light emission via a buffer layer 102 on one main surface of the substrate 101.
- Layer 103 is laminated.
- the light emitting element 1 is, for example, a blue light emitting LED chip.
- the substrate 101 is made of sapphire.
- the buffer layer 102 is made of, for example, A1N.
- the semiconductor layer 103 involved in the light emission includes, for example, the In type GaN layer, the second n type GaN layer, the InGaN layer (light emitting layer), the p type AlGaN layer, and the lp A type GaN layer and a second p-type GaN layer (not shown) are stacked.
- the first electrode 104 and the second electrode 105 of the light emitting element 1 are provided on the same main surface side of the substrate 1, for example, as shown in FIG. At this time, the first electrode 104 is provided on the In-type GaN layer as shown in FIG. Further, the second electrode 105 is provided on the second p-type GaN layer as shown in FIG. At this time, the step between the first electrode 104 and the second electrode 105 is the thickness of the second n-type GaN layer, InGaN layer (light emitting layer), p-type A1 GaN layer, lp-type GaN layer, and second p-type GaN layer. Is approximately equal to the sum of 0. 05 zm—about 2 ⁇ m
- the first electrode 104 and the first lead 201 of the light-emitting element 1 and the second electrode 105 and the second lead 202 of the light-emitting element 1 are bonded with a bonding material 4 such as a gold-tin alloy, for example. It has been. At this time, the bonding surface of the first lead 201 to the first electrode 104 and the bonding surface of the second lead 202 to the second electrode 105 are, for example, as shown in FIG. It is preferable to provide the groove 201v, 202v.
- the V-shaped grooves 201v and 202v of each lead are grooves extending from the inside of the joining area to each electrode 104 and 105 to the outside of the joining area, and a plurality of the V-shaped grooves 201v and 202v in the joining area. It is preferable that the grooves are crossed or branched.
- a reflecting mirror portion 201b is provided around the light emitting element 1.
- the reflecting mirror part 201b has an end of the first lead 201 opposite to the part joined to the first electrode 104, and the outer shape is a truncated cone shape or an elliptical shape.
- the light source is shaped like a frustum with an open top and bottom and is bent on the light emitting element 1.
- the portion of the first lead 201 joined to the first electrode 104 and the portion of the second lead 202 joined to the second electrode 105 are as shown in FIG. 2 and FIG. It passes through the opening 201c of the reflecting mirror part 201b and is provided so as to exist in the internal space of the reflecting mirror part 201b. Yes.
- the transparent resin 3 is used to join the reflector part 201a and the leads 201 and 202 to the electrodes 104 and 105 in addition to the light emitting element 1. It is provided to seal the part.
- the light emitting device of the first embodiment when a voltage is applied between the first electrode 104 and the second electrode 105 of the light emitting element 1 using the first lead 201 and the second lead 202, As shown in FIG. 4, light having a wavelength corresponding to the configuration of the semiconductor layer involved in the light emission is emitted (emitted) from the light emitting layer (not shown) of the light emitting element 1. At this time, among the light emitted from the light emitting layer, as shown in FIG. 4, the light ⁇ P1 emitted from the side surface of the light emitting element 1 is reflected by the reflector unit 201b and has an optical path upward in the drawing. change.
- the substrate 101 of the light emitting element 1 is a substrate that transmits light such as sapphire
- the light OP2 emitted from the light emitting layer to the substrate side transmits the substrate 101 and moves upward in the drawing. Is emitted.
- the light emitted from the light emitting element 1 can be condensed in the upward direction on the paper surface and output to the outside of the light emitting device.
- the first electrode 104 and the second electrode 105 of the light emitting element 1 are provided on the same main surface side of the substrate 101.
- the first electrode 104 and the first lead 201, and the second electrode 105 and the second lead 202 are joined together in the internal space of the reflecting mirror portion 20 lb. That is, in the light emitting device according to the first embodiment, for example, a wire for connecting one electrode and the lead as in the light emitting device described in Japanese Patent Application Laid-Open No. 11-251645 is unnecessary.
- the light emitted from the light emitting layer of the light emitting element is blocked by the wire, and for example, it is possible to prevent the light output from the light emitting device from causing a shadow or light unevenness reflecting the shape of the wire.
- the resistance can be reduced and the current capacity can be increased. Therefore, a larger current can be passed and high luminance can be obtained.
- flip-chip bonding using a bonding material made of a metal material, high heat dissipation can be obtained, and heat generated when a large current flows can also be efficiently dissipated.
- FIG. 5 to FIG. 12 are schematic views for explaining the method for manufacturing the light emitting device of the first embodiment.
- 5 is a plan view of the lead frame used for manufacturing the light-emitting device as seen from the element mounting surface side
- FIG. 6 is a cross-sectional view taken along the line BB ′ of FIG. 5
- FIG. 8 to 10 are cross-sectional views of the step of bending the reflecting mirror
- FIG. 11 is a cross-sectional view of the step of mounting the light emitting element
- FIG. 12 is a cross-sectional view of the step of sealing with a transparent resin. .
- a lead frame LF as shown in FIGS. 5 and 6 is used.
- the first lead 201 that is electrically connected to the first electrode 104 of the light emitting element 1 is a portion between the junction with the first electrode 104 of the light emitting element 1 and the reflecting mirror part 201b.
- the suspension leads 201a are supported in a floating state on the opening of the frame.
- an opening 201c is formed near the center of the reflecting mirror 201b.
- the second lead 202 electrically connected to the second electrode 105 of the light emitting element 1 has an end portion on the opposite side of the joint with the second electrode 105 connected to the frame.
- the lead frame LF is formed by punching a lead pattern as shown in FIG. 5 on a conductive plate such as a copper plate having a thickness of about 100 zm using a punching die.
- a conductive plate such as a copper plate having a thickness of about 100 zm using a punching die.
- the lead frame LF may be formed by, for example, forming a plurality of lead patterns as shown in FIG. 5 on a tape-like or strip-like conductor plate that is long in one direction (vertical direction on the paper surface). Only one lead pattern as shown in FIG. 5 may be formed on one conductor plate.
- the joint of each lead 201, 202 to each electrode of the light emitting element 1, and The reflecting mirror part 201b of the first lead 201 is molded.
- the joints of the leads 201 and 202 are formed using, for example, a V-shaped bending die.
- the reflecting mirror portion 201b of the first lead 201 is molded using, for example, a diaphragm mold so that the outer shape is a truncated cone shape or an elliptical cone shape.
- the reflecting mirror portion 201b of the first lead 201 is molded so as to protrude in the direction in which the joint portion is bent.
- a V-shaped groove extending from the inside of the joint region to the outside is formed in the joint region with each electrode.
- the V-shaped groove is provided with a protrusion for forming a V-shaped groove on the bending die. It may be formed at the same time as the bending of the joint, or may be formed using another mold after bending.
- the reflecting mirror portion 201b of the first lead 201 is then bent, It comes on the joint of each of the leads 201 and 202.
- the reflecting mirror portion 201b first fixes the frame portion of the lead frame LF and the first lead 201 with the molds 5a and 5b, and the reflecting mirror portion 201b. A portion close to the end of the first portion (first bent portion) is bent by the mold 5c so that the reflecting mirror portion 201b is raised about 90 degrees.
- the frame portion of the lead frame LF and the suspension lead (not shown) of the first lead 201 are fixed with the molds 5a and 5d, and the first lead 201 A portion closer to the joint than the first bent part (second bent part) is bent by the mold 5c so that the reflecting mirror part 201b is positioned on the joined part of the leads 201 and 202. .
- the frame portion of the lead frame LF and the suspension lead (not shown) of the first lead 201 are fixed by the molds 5a and 5d, and the first bent portion and A light-emitting element that is bent between the second bent portions by a mold 5e so that the reflecting mirror portion 201b does not contact the second lead 202 and is bonded to the center of the reflecting mirror portion 201b and the bonding portion. Adjust so that the center position is almost the same.
- the light emitting element 1 is mounted as shown in FIG.
- the joint portion of the first lead 201 and the joint portion of the second lead 202 are heated by separate heaters 6a and 6b.
- a gold-tin alloy is used for the bonding material 4 that electrically connects the electrodes 104 and 105 of the light-emitting element 1 and the leads 201 and 202.
- the bonding material 4 is provided on the surfaces of the first electrode 104 and the second electrode 105 of the light emitting element 1.
- Step force generated between the joint surfaces of the light emitting elements When the step difference between the first electrode 104 and the second electrode 105 of the light emitting element does not match, the height of the heaters 6a and 6b is adjusted to reduce the step.
- the power S can be matched. Therefore, it is possible to reduce the inclination of the light emitting element 1 and the connection failure between each electrode and each lead.
- the periphery of the light emitting element 1 is sealed with a transparent resin 3 as shown in FIG.
- the transparent resin 3 is formed by transfer molding so that the outer shape becomes a rectangular parallelepiped shape so as to cover the entire reflecting mirror part 201b, for example, as shown in FIGS.
- the suspension leads (not shown) of the first leads 201 and the second leads 202 are cut along the side surfaces of the transparent resin 3. A light emitting device is obtained.
- the light emitting device of the first embodiment the light emitted from the light emitting element and output to the outside of the device is not blocked by the bonding wire. Therefore, for example, the luminous efficiency can be improved as compared with a conventional light emitting device as described in JP-A-11-251645. Further, by performing flip chip bonding on the lead frame using a bonding material made of a metal material such as a gold-tin alloy, the resistance can be reduced and the current capacity can be increased. Therefore, a larger current can be passed and high luminance can be obtained. In addition, by performing flip chip bonding using a bonding material made of a metal material, high heat dissipation can be obtained, and heat generated when a large current is passed can be efficiently dissipated.
- the first lead 201 connected to the first electrode 104 of the light emitting element 1 and the second lead The amount of bending of the second lead 202 connected to the electrode 105 is changed, and the step between the first electrode 104 and the second electrode 105 of the light emitting element 1 is relaxed.
- the first lead 201 and the second lead 202 are heated by separate heaters 6a and 6b, for example, between the joint surfaces of the first lead 201 and the second lead 202 in the bending process.
- the level difference does not coincide with the level difference between the first electrode 104 and the second electrode 105 of the light emitting element, the level difference can be matched by adjusting the height of the heaters 6a and 6b.
- each lead 201, 202 of the lead frame LF Since only the amount of bending needs to be changed, the manufacturing is easy and the manufacturing cost can be reduced.
- FIGS. 13 to 18 are schematic views for explaining an application example of the light emitting device of the first embodiment, and FIG. 13 shows a configuration example of the light emitting device in which a reflecting material is filled with a fluorescent material.
- 14 is a cross-sectional view, FIG. 14 is a diagram illustrating an example of a manufacturing method of the light-emitting device illustrated in FIG. 13, FIG. 15 is a diagram illustrating problems in the manufacturing method illustrated in FIG. 14, and FIGS. It is a figure which shows an example of the method of solving the shown problem.
- the light emitting device of Example 1 is provided with a transparent resin 3 that seals the periphery of the light emitting element 1 up to the outside of the reflecting mirror part 201b, and the outer shape is a rectangular parallelepiped.
- the present invention is not limited to this.
- FIG. 13 as shown in FIG. A resin 7 mixed with a wavelength converting material) is provided, and the transparent resin 3 is molded and sealed so that the outer shape is a rectangular parallelepiped.
- the wavelength of the light emitted from the light emitting element 1 is the wavelength conversion characteristic of the fluorescent material. Is converted to a wavelength corresponding to the wavelength and output to the outside of the light emitting device. Therefore, it is possible to manufacture a light emitting device that outputs light having various wavelengths, not limited to light having a wavelength (color) peculiar to the light emitting element 1.
- the bottom surface of the reflecting mirror part 201b has an opening 201c.
- the resin 7 may flow out from the gap between the opening 201c and each of the leads 201 and 202 as shown in FIG. Therefore,
- the gap between the opening 201c of the reflecting mirror part and each of the leads 201 and 202 is blocked, and the light emitting layer of the light emitting element 1
- the first sealing resin layer 3a having a height not covering the surface is formed.
- the first sealing resin layer 3a may be a transparent resin or a colored resin.
- the reflecting mirror portion 20 lb is filled with the resin 7 mixed with the fluorescent material.
- the second sealing resin layer 3b is formed on the first sealing resin layer 3a by transfer molding or the like.
- the reflector part 201b is molded so that the outer shape is a truncated cone shape or an elliptic truncated cone shape.
- the present invention is not limited to this.
- it may be formed into a concave mirror shape.
- a blue light emitting LED chip is taken as an example of the light emitting element 1, but the light emitting element 1 emits light of other colors. It may be an LED chip or an LD chip.
- the transparent resin 3 is not limited to the force S formed so that the outer shape is a rectangular parallelepiped as shown in Figs.
- the light output surface is molded into a convex lens or Fresnel lens.
- FIG. 19 and FIG. 20 are schematic views showing a schematic configuration of the light emitting device of Example 2 according to the present invention.
- FIG. 19 is a plan view when the light emitting device is viewed from the light output direction
- FIG. FIG. 20 is a cross-sectional view taken along line C-C 'in FIG.
- the light-emitting device of Example 2 includes a light-emitting element 1 and a first lead electrically connected to a first electrode (not shown) of the light-emitting element 1. 201, a second lead 202 electrically connected to a second electrode (not shown) of the light emitting element 1, and a transparent resin 3 for sealing the periphery of the light emitting element 1.
- the light-emitting element 1 is an LED chip or an LD chip as described in the first embodiment, for example, a chip-shaped element having a configuration as shown in FIG. Is omitted.
- the light emitting device has a second lead 202 force electrically connected to the second electrode 105 of the light emitting element 1 and is molded into a cup shape as shown in Figs.
- the second electrode 105 of the light emitting element 1 is electrically connected to the inner bottom surface of the cup-shaped portion (hereinafter referred to as the cup portion) 202a.
- an opening 202b that connects the internal space of the cup 202a and the outside is provided on the bottom surface of the cup 202a, and the first lead 201 has an opening 202b of the cup 202a. It is electrically connected to the first electrode 104 of the light emitting element 1 through.
- the first lead 201 and the first electrode 104 of the light emitting element 1 and the second lead 202 and the second electrode 202 of the light emitting element 1 are, for example, gold They are electrically connected by a bonding material 4 such as a tin alloy.
- a bonding material 4 such as a tin alloy.
- a V-shaped groove as described in the first embodiment is provided on the joint surface between the first lead 201 and the second lead 202.
- the light emitting device of Example 2 does not require a wire for connecting one electrode to a lead. Therefore, the light emitted from the light emitting layer of the light emitting element 1 and output to the outside of the device is blocked by the wire, and for example, the light output from the light emitting device is prevented from being shaded reflecting the shape of the wire. Can do. Further, by performing flip chip bonding on the lead frame using a bonding material made of a metal material such as a gold-tin alloy, resistance can be reduced and current capacity can be increased. Therefore, a larger current can be passed and high luminance can be obtained. In addition, by performing flip chip bonding using a bonding material made of a metal material, high heat dissipation can be obtained, and heat generated when a large current is passed can be efficiently dissipated.
- FIGS. 21 to 27 are schematic views for explaining a method for manufacturing the light-emitting device of Example 2.
- FIG. 21 is a plan view of a lead frame used for manufacturing the light-emitting device as viewed from the element mounting surface side.
- Fig. 22, Fig. 22 is a sectional view taken along the line D-D 'of Fig. 21, Fig. 23 is a sectional view of the process of molding the cup portion,
- Fig. 24 is a plan view of the process of bending the first lead, and
- Fig. 25 is an E-
- FIG. 26 is a sectional view of the process for mounting the light emitting element, and
- FIG. 27 is a sectional view of the process for sealing with a transparent resin.
- the light-emitting device of Example 2 is manufactured, for example, as shown in FIG. 21 and FIG. Use a lead frame LF.
- an opening 202b through which the first lead 201 is passed is formed in a portion where the cup portion 202a of the second lead 202 is formed.
- the first lead 201 is formed so as to protrude in an oblique direction with respect to the second lead 202.
- the lead frame LF is formed, for example, by punching a lead pattern as shown in FIG. 21 on a conductor plate such as a copper plate having a thickness of about 100 mm using a punching die.
- the lead frame LF as shown in Figure 22, is still flat.
- the lead frame LF may be formed, for example, by forming a plurality of lead patterns as shown in FIG. 21 on a tape-like or strip-like conductor plate that is long in one direction (vertical direction on the paper surface). A single conductor pattern having only one lead pattern as shown in FIG. 21 may be formed.
- the tip 202a of the second lead 202 is molded into a cup shape.
- the second lead 202a is molded using, for example, a drawing die.
- the V-shaped groove may be formed on the inner bottom surface of the cup 202a simultaneously with the molding of the force cup 202a, or after the cup 202a is molded.
- the V-shaped groove may be formed using another mold.
- the first lead 201 is bent toward the opening 202b of the cup 202a of the second lead 202,
- the first lead 201 is molded so that the tip of the first lead 201 passes through the opening 202b of the cup part 202a and enters the internal space of the cup part 202a.
- the first lead 201 is molded using, for example, a bending die.
- the V-shaped groove may be formed on the joint surface with the first electrode 104 of the light emitting element 1 simultaneously with the molding of the tip of the first lead 201, or the tip of the first lead 201 is molded. Thereafter, the V-shaped groove may be formed using another mold.
- the light-emitting element 1 is mounted as shown in FIG. At this time, the joint portion of the first lead 201 and the joint portion of the second lead 202 are heated by separate heaters 6a and 6b.
- a gold-tin alloy is used for the bonding material 4 that electrically connects the electrodes 104 and 105 of the light emitting element 1 and the leads 201 and 202.
- the bonding material 4 is used for the first current of the light-emitting element 1. It is provided on the surface of the electrode 104 and the second electrode 105.
- the bonding material 4 provided on the electrodes 104 and 105 of the light emitting element 1 is melted by the heat from the leads 201 and 202, the molten bonding material 4 is transferred to the leads 201. , 202 flows into the V-shaped groove. For this reason, it is possible to reduce defects such as the bonding material 4 spreading outside the bonding region and short-circuiting.
- the first lead 201 and the second lead 202 are heated by the additional heaters 6a and 6b, for example, it is generated between the joint surfaces of the first lead 201 and the second lead 202 in the bending process.
- the step difference does not match the step difference between the first electrode 104 and the second electrode 105 of the light emitting element, the height of the heaters 6a and 6b is adjusted to match the step. it can. Therefore, it is possible to reduce the inclination of the light emitting element 1 and the connection failure between each electrode and each lead S.
- the periphery of the light emitting element 1 is sealed with a transparent resin 3 as shown in FIG.
- the transparent resin 3 is formed by transfer molding so that the outer shape of the transparent resin 3 becomes a rectangular parallelepiped shape covering the entire cup part (reflecting mirror part) 202a, as shown in FIGS. 19 and 20, for example. To do.
- the first lead 201 and the second lead 202 are cut along the side surface of the transparent resin 3, whereby the light emitting device of Example 2 is obtained.
- the light emitting device of the second embodiment the light emitted from the light emitting element and output to the outside of the device is not blocked by the bonding wire. Therefore, for example, the luminous efficiency can be improved as compared with a conventional light emitting device as described in JP-A-11-251645. Further, by performing flip chip bonding on the lead frame using a bonding material made of a metal material such as a gold-tin alloy, the resistance can be reduced and the current capacity can be increased. Therefore, a larger current can be passed and high luminance can be obtained. In addition, by performing flip chip bonding using a bonding material made of a metal material, high heat dissipation can be obtained, and heat generated when a large current is passed can be efficiently dissipated.
- the tip of the first lead 201 connected to the first electrode 104 of the light-emitting element 1 is The internal space side of the cup part 202a through the opening 202b of the second lead 202 connected to the second electrode 105 The step between the first electrode 104 and the second electrode 105 of the light emitting element 1 is relaxed. Further, the first lead 201 and the second lead 202 are heated by the additional heaters 6a and 6b, for example, between the joint surfaces of the first lead 201 and the second lead 202 in the bending process.
- the steps can be matched by adjusting the heights of the heaters 6a and 6b. Therefore, it is possible to reduce the inclination of the light emitting element 1 and the connection failure between each electrode and each lead.
- the manufacturing is easy and the manufacturing cost can be reduced.
- the light emitting device of Example 2 is also a resin in which the fluorescent material (wavelength conversion material) is mixed before sealing with the transparent resin 3.
- the fluorescent material wavelength conversion material
- the transparent resin 3 By filling 7 in the force portion 202b, it is possible to manufacture a light emitting device that outputs light having various wavelengths, not limited to light having a wavelength (color) peculiar to the light emitting element 1.
- the resin 7 filled in the cup 202b may flow out of the opening 202b. Therefore, when the viscosity of the resin 7 is low, for example, as in the example shown in FIG. 17, the opening 202b of the cup portion 202a is blocked and the light emitting layer of the light emitting element 1 is not covered. After the first sealing resin layer 3a is formed, the resin 7 mixed with the fluorescent material is filled into the cup portion 202a, and then the second sealing resin layer 3b is formed.
- the cup portion 202a is molded so that the outer shape is a truncated cone shape or an elliptic truncated cone shape as shown in FIGS.
- the present invention is not limited to this.
- it may be formed in a concave mirror shape.
- the light emitting element 1 is the same as that of Example 1, and the first electrode 104 and the second electrode 105 are provided on the same main surface of the substrate 101. As long as it has such a configuration, it may be an LED chip that emits light of any wavelength (color) or an LD chip.
- the transparent resin 3 is molded so that the outer shape is a rectangular parallelepiped as shown in FIGS. 19 and 20.
- the present invention is not limited to this.
- light May be formed into a convex lens shape or a Fresnel lens shape.
- FIG. 28 to FIG. 31 are schematic views showing a schematic configuration of the light emitting device of Example 3 according to the present invention.
- FIG. 28 is a plan view when the light emitting device is viewed from the light output direction
- FIG. 28 is a cross-sectional view taken along line FF ′ in FIG. 28
- FIG. 30 is a plan view when the light emitting element is viewed from the electrode surface side
- FIG. 31 is a cross-sectional view taken along line GG ′ in FIG. Note that FIG. 31 is shown upside down.
- the light-emitting device of Example 3 includes a light-emitting element 1 and a first lead electrically connected to the first electrode (not shown) of the light-emitting element 1. 201, a second lead 202 electrically connected to a second electrode (not shown) of the light emitting element 1, and a transparent resin 3 for sealing the periphery of the light emitting element 1.
- the light-emitting element 1 used in the light-emitting device of Example 3 is involved in light emission via the buffer layer 102 on one main surface of the substrate 101.
- a semiconductor layer 103 is laminated.
- the light emitting element 1 is, for example, a blue light emitting LED chip
- the substrate 101 has a sapphire force, for example.
- the buffer layer 102 is made of, for example, A1N.
- the semiconductor layer 103 involved in the light emission includes, for example, the first In-type GaN layer, the second n-type GaN layer, the InGaN layer (light-emitting layer), the p-type AlGaN layer, the first lp in order from the buffer layer 102 side.
- a type GaN layer and a second p-type GaN layer are stacked.
- the light-emitting element 1 used in the light-emitting device of Example 3 is formed on the first In-type GaN layer near the center of the semiconductor layer 103 involved in the light emission.
- a concave portion is provided, and the first electrode 104 is provided on the bottom surface of the concave portion.
- the second electrode 105 is provided on the second p-type GaN layer. That is, in the light-emitting element 1 used in the light-emitting device of Example 3, the second electrode 105 is provided in a ring around the first electrode 104.
- the second lead 202 is molded into a cup shape whose outer shape is a truncated cone shape or an elliptical truncated cone shape.
- the second electrode 105 is electrically connected to the inner bottom surface of a cup-shaped portion (hereinafter referred to as a cup portion) 202a of the second lead 202.
- a cup portion a cup-shaped portion
- the node 202 is bonded with a bonding material 4 such as a gold-tin alloy, for example.
- the cup 202a of the second lead 202 is formed on the cup portion 202a from the inside of the junction region with the second electrode 105 of the light emitting element 1, for example, as described in the first embodiment. There is a V-shaped groove extending outward.
- a through hole 202b is formed on the bottom surface of the cup portion 202a of the second lead 202 on the inner side of the annular region connected to the second electrode 105. It is provided. Then, as shown in FIG. 29, the first electrode 104 and the first lead 201 of the light-emitting element 1 are electrically connected by a bonding wire 8 passing through the through hole 202b of the cup portion 202a of the second lead 202. It is connected.
- the light-emitting device of Example 3 when a voltage is applied between the first electrode 104 and the second electrode 105 of the light-emitting element 1 using the first lead 201 and the second lead 202, The light emitting layer of the light emitting element 1 emits (emits) light having a wavelength corresponding to the configuration of the semiconductor layer involved in the light emission. At this time, of the light emitted from the light emitting layer, the light emitted from the side surface of the light emitting element 1 is reflected by the side surface of the cup portion 202a, and the optical path changes in the upward direction on the paper surface.
- the substrate 101 of the light emitting element 1 is a substrate that transmits light such as sapphire
- the light emitted from the light emitting layer to the substrate 101 side passes through the substrate 101 and extends upward in the drawing. Emitted.
- the light emitted from the light emitting element 1 can be collected in the upward direction on the paper and output to the outside of the light emitting device.
- the first electrode 104 and the second electrode 105 of the light emitting element 1 are provided on the same main surface side of the substrate 101.
- the first electrode 104 and the first lead 201 are connected by a bonding wire 8 that is drawn out in a direction opposite to the light output direction through the through hole 202b of the second lead 202. That is, in the light emitting device of the third embodiment, for example, as in the light emitting device described in Japanese Patent Application Laid-Open No. 11-251645, a wire for connecting one electrode and the lead is necessary. Force The light emitted from the light emitting element in the output direction or the light reflected by the side surface of the cup portion and changed in the output direction is not blocked. For this reason, the light emitted from the light emitting layer of the light emitting element is blocked by a wire, for example, the light output from the light emitting device is It is possible to prevent a shadow reflecting the shape of the shaper.
- the light emitting layer of the light emitting element 1 is provided in a ring around the first electrode 104 (bonding wire 8).
- FIG. 32 to FIG. 35 are schematic views for explaining the method for manufacturing the light emitting device of Example 3, and FIG. 32 is a plan view of the lead frame used for manufacturing the light emitting device as viewed from the element mounting surface side.
- Fig. 33 is a cross-sectional view of the process of connecting the light emitting device to the second electrode and the second lead
- Fig. 34 is a plan view of the process of bending the first lead
- Fig. 35 is the first electrode and the first electrode of the light emitting device. It is sectional drawing of the process of connecting a lead.
- a lead frame LF as shown in FIG. 32 is used.
- a through hole (opening) 202b through which the bonding wire 8 is passed is provided near the center of the portion of the second lead 202 where the cup portion 202a is formed.
- the first lead 201 is provided so as to protrude in an oblique direction with respect to the second lead 202, as shown in FIG.
- the lead frame LF is formed on a conductive plate such as a copper plate having a thickness of about 100 / m using a punching die. Therefore, although not shown, the lead frame LF immediately after forming the lead pattern with the punching die is flat.
- the cup portion 202a of the second lead 202 is formed into a truncated cone shape as shown in FIGS. Molded into a cup shape with an elliptic frustum shape.
- the V-shaped groove may be formed at the same time as the molding using the drawing mold.
- the V-shaped groove may be formed using another mold.
- the lead frame LF is formed by, for example, forming a plurality of lead patterns as shown in FIG. 32 on a tape-like or strip-like conductor plate that is long in one direction (the vertical direction on the paper). Alternatively, only one lead pattern as shown in FIG. 32 may be formed on one conductor plate.
- the inner bottom surface of the cup portion 202a and the second electrode 105 of the light emitting element 1 are electrically connected as shown in FIG.
- the second electrode 105 of the light emitting element 1 and the inner bottom surface of the cup portion 202a are bonded using a bonding material 4 such as a gold-tin alloy, for example.
- the bonding material 4 is provided on the second electrode 105 side of the light emitting element 1.
- the light emitting element 1 adsorbed on the collet 6c is pressed against the bottom surface of the cup portion 202a, and the bonding is performed.
- the material 4 is melted and joined to the second lead 202.
- the bonding material 4 provided on the second electrode 105 of the light emitting element 1 is melted by the heat from the second lead 202, the molten bonding material 4 is applied to the bottom surface of the cup portion 202a. It flows into the V-shaped groove. Therefore, it is possible to reduce defects such as the bonding material 4 spreading outside the bonding region and short-circuiting.
- the first lead 201 is connected to the cup portion of the second lead 202 as shown in FIG. Bend in the direction of 202a through hole 202b.
- the tip portion of the first lead 201 is moved as shown in FIG. Bend it to the cup 202a side.
- the first electrode 104 of the light emitting element 1 and the first lead 201 are then connected as shown in FIG. Electrically connected with bonding wire 8.
- bonding wire 8 the periphery of the light emitting element 1 is sealed with a transparent resin 3 molded so that the outer shape is a rectangular parallelepiped by a transfer mold or the like, and along the side surface of the transparent resin 3.
- the light emitting device of the third embodiment the light emitted from the light emitting element and output to the outside of the device is not blocked by the bonding wire. For that reason, the luminous efficiency can be improved as compared with a light emitting device having a form as described in Japanese Patent Application Laid-Open No. 11-251645.
- the first electrode 104 and the first electrode 104 of the light emitting element 1 are connected to the first electrode 104 by the bonding wire 8 passing through the through hole 202b of the cup portion 202a of the second lead 202.
- the lead 201 is electrically connected. Therefore, there is no need for a process for reducing the step between the first electrode 104 and the second electrode 105 of the light emitting element 1 as described in the first and second embodiments. Therefore, it is easy to reduce the inclination of the light emitting element 1 and the connection failure between the electrode and the lead.
- FIG. 36 is a schematic diagram for explaining another function and effect of the light emitting device of the third embodiment, and is a cross-sectional view of a process of filling a cup portion with a resin mixed with a fluorescent material.
- the light-emitting device of Example 3 was also mixed with the fluorescent material (wavelength conversion material) before sealing with the transparent resin 3. Filling the cup portion 202a with the resin 7 thus manufactured makes it possible to manufacture a light emitting device that outputs light of various wavelengths as well as light having a wavelength (color) peculiar to the light emitting element 1.
- the resin 7 mixed with the fluorescent material is injected with a nozzle force to fill the cup 202a, for example, as shown in FIG.
- the resin 7 filled in the reflecting mirror part (cup part) 202a is an opening.
- the process of filling the opening with another resin 3a was necessary before filling.
- the second electrode 105 of the light emitting element, the second lead 202 (cup ⁇ B202a), and the through hole 202b of the cup ⁇ B202a are connected in an annular shape. ing.
- the connecting portion between the second electrode 105 and the second lead 202 of the light emitting element 1 becomes a wall and the resin 7 mixed with the fluorescent material is filled, the filled resin 7 flows out from the through hole 202b. Hanare. Therefore, even when the viscosity of the resin 7 mixed with the fluorescent material is low, the step of forming the first sealing resin layer 3a as described in Example 1 and Example 2 is unnecessary, and the manufacturing cost is reduced. can do.
- cup portion 202a is molded so that the outer shape thereof is a truncated cone shape or an elliptic truncated cone shape as shown in Figs. But for example, it may be formed in a concave mirror shape.
- the light emitting element 1 is the same as in Example 1 and the like, and the first electrode 104 and the second electrode 105 are provided on the same main surface of the substrate 101. As long as such a configuration is acceptable, it may be an LED chip that emits light of any wavelength (color) or an LD chip.
- the transparent resin 3 is molded so that the outer shape is a rectangular parallelepiped as shown in FIGS. 28 and 29.
- the light output surface may be molded into a convex lens shape or a Fresnel lens shape.
- FIG. 37 and FIG. 38 are schematic views showing a schematic configuration of the light emitting device of Example 4 according to the present invention.
- FIG. 37 is a plan view when the light emitting device is viewed from the light output direction
- FIG. FIG. 38 is a sectional view taken along line K-1 K ′ of FIG.
- the light-emitting device of Example 4 has a first lead electrically connected to the light-emitting element 1 and the first electrode (not shown) of the light-emitting element 1. 201, a second lead 202 electrically connected to a second electrode (not shown) of the light emitting element 1, and a transparent resin 3 for sealing the periphery of the light emitting element 1.
- the light-emitting element 1 has the same configuration as that of the light-emitting element used in the light-emitting device of Example 1, and thus detailed description thereof is omitted.
- the second lead 202 is a conductor molded in a cup shape as shown in FIGS. 37 and 38, and a through hole 202b is provided on the bottom surface.
- a bonding agent such as a gold-tin alloy, for example.
- a V-shaped groove extending from the inside to the outside of the joining region is provided on the bottom surface of the second lead 202.
- the first lead 201 is a columnar conductor that passes through the through hole 202b of the second lead 202, as shown in FIGS. At this time, the force not shown in the figure
- the first electrode 104 of the light emitting element 1 and the first lead 201 are, for example, a high melting point solder such as an alloy having a composition ratio of Sn, Ag, Cu of approximately 96.5: 3: 0.5. Electrically connected with Has been.
- the material for connecting the first electrode 104 and the first lead 201 is not limited to the high melting point solder having the above composition ratio, and an appropriate material can be appropriately selected from known ones.
- the first lead 201 is electrically insulated from the second lead 202 by the transparent resin 3 filled in the through hole 202b of the second lead 202.
- the light-emitting device of Example 4 when a voltage is applied between the first electrode 104 and the second electrode 105 of the light-emitting element 1 using the first lead 201 and the second lead 202, The light emitting layer of the light emitting element 1 emits (emits) light having a wavelength corresponding to the configuration of the semiconductor layer 103 involved in the light emission. At this time, out of the light emitted from the light emitting layer, the light emitted from the side surface of the light emitting element is reflected by the side surface of the second lead (cup part) 202, and the optical path is changed upward in the drawing.
- the substrate 101 of the light emitting element 1 is a substrate that transmits light such as sapphire
- the light emitted from the light emitting layer toward the substrate is transmitted through the substrate 101 and emitted upward in the drawing.
- the light emitted from the light emitting element 1 can be collected in the upward direction on the paper and output to the outside of the light emitting device.
- the first electrode 104 and the second electrode 105 of the light emitting element 1 are provided on the same main surface side of the substrate 101.
- the first electrode 104 is connected to the first lead 201 that passes through the through hole 202b of the second lead 202 and is drawn out to the back side of the surface on which the light emitting element 1 is mounted. That is, in the light emitting device of the fourth embodiment, for example, a wire for connecting one electrode and a lead as in the light emitting device described in Japanese Patent Application Laid-Open No. 11-251645 is unnecessary. Therefore, the light emitted from the light emitting layer of the light emitting element is blocked by the wire, and for example, it is possible to prevent the light output from the light emitting device from causing a shadow or light unevenness reflecting the shape of the sheath.
- FIG. 39 to FIG. 46 are schematic views for explaining the method for manufacturing the light emitting device of Example 4, and FIG. 39 is a plan view of the lead frame used for manufacturing the light emitting device as viewed from the element mounting surface side.
- Fig. 40 is a cross-sectional view taken along line L-L 'in Fig. 39.
- Fig. 41 is a plan view of the process of molding the second lead (cup-shaped lead).
- Fig. 42 is a cross-sectional view taken along line M-M' in Fig. 43 is a cross-sectional view of the process of connecting the second electrode and the second lead of the light-emitting element,
- FIG. 44 is a cross-sectional view of the process of connecting the first electrode of the light-emitting element and the first lead, and
- FIG. Cross-sectional view of the process of sealing the periphery, Figure 46 is the finish It is sectional drawing of this process.
- a lead frame LF as shown in FIGS. 39 and 40 is used. At this time, only the lead pattern for forming the second lead (cup-shaped lead) 202 is formed on the lead frame LF. At this time, a through hole 202b is formed in a predetermined region of the second lead 202. At this time, the lead frame LF is formed on a conductive plate such as a copper plate having a thickness of about 100 zm using a punching die. Therefore, although not shown, the lead frame immediately after forming the pattern with the punching die is a flat LF.
- the second lead 202 is molded into a cup shape.
- the second lead 202 is molded using, for example, a drawing die so that the outer shape is a truncated cone shape or an elliptical truncated cone shape.
- the V-shaped groove may be formed simultaneously with the molding using the drawn mold, or the drawn mold. After forming using V, the V-shaped groove may be formed using another mold.
- the second electrode 105 of the light emitting device 1 and the inner bottom surface of the second lead (cup-shaped lead) 202 are formed. Connect electrically. Since the connection method (bonding method) between the second electrode 105 and the second lead 202 is the same as described in the third embodiment, detailed description thereof is omitted.
- the lead frame LF is turned upside down as shown in FIG.
- the first lead 201 is passed through the through hole 202b, and the first electrode 104 of the light emitting element 1 and the first lead 201 are electrically connected.
- the first electrode 104 and the first lead 201 of the light emitting element 1 are connected by a high melting point solder such as an alloy having a composition ratio of Sn, Ag, and Cu of approximately 96.5: 3: 0.5.
- the second leads 202 are formed using molding dies 4f and 4g.
- the transparent resin 3 is poured into the internal space of the cup part from the through hole 202b on the bottom surface of the second lead 202 in a state where the opening end is covered, and the periphery of the light emitting element 3 is sealed.
- the transparent resin 3 is poured into the cup, the amount of the transparent resin 3 is large and the first lead 201 is covered with the transparent resin 3 as shown in FIG. There is.
- FIG. 47 is a schematic diagram for explaining one of the effects of the light emitting device of the fourth embodiment.
- a terminal part for mounting on a mounting board or the like is provided outside the cup part 202a of the second lead 202.
- the light emitting device uses the outer bottom surface of the cup portion 202a as a mounting terminal portion.
- the diameter CB on the inner bottom surface of the second lead (cup-shaped lead) 202 may be about 550 / im, for example.
- the diameter CT of the open end of the second lead 202 differs depending on, for example, the height (depth) CH of the second lead 202 and the angle ⁇ formed by the bottom surface and the side surface (reflecting mirror portion).
- the second lead can be formed with a height CH of about 300 ⁇ m and about 900 ⁇ m. That is, by manufacturing the light emitting device by the method described in the fourth embodiment, a very small light emitting element can be easily manufactured.
- the first lead 201 can be sufficiently connected (joined) to the wiring (terminal) of the mounting board if the diameter L1 of the mounting terminal surface is about 150 / m. Further, at this time, for example, if the diameter L2 force S300 ⁇ m of the through hole 202b of the second lead 202 is about 300 ⁇ m, the transparent resin 3 is sufficiently removed from the inner peripheral surface of the through hole 202b and the gap between the first lead 201. Can be poured.
- the light emitting device of Example 4 the light emitted from the light emitting element and output to the outside of the device is not blocked by the bonding wire. Therefore, for example, the light emission efficiency can be improved as compared with a light emitting device having a form as described in Japanese Unexamined Patent Publication No. 11-251645.
- resistance can be reduced by flip-chip bonding on the lead frame using a connection material made of a metal material such as solder.
- the current capacity can be increased. Therefore, a larger current can be passed and high luminance can be obtained.
- by performing flip chip bonding using a connection material made of a metal material high heat dissipation can be obtained, and heat generated when a large current is passed can be efficiently dissipated.
- the second lead 202 is molded into a cup shape, and the outer bottom surface is used as a mounting terminal surface. Further, a through hole 202b is provided on the bottom surface of the second lead 202, and a first lead 201 that is electrically insulated from the second lead 202 is provided inside the through hole 202b. Therefore, as in the light emitting devices of Example 2 and Example 3, the mounting terminal portion does not protrude outside the second lead (cup-shaped lead) 202 when viewed from the light output direction. A light emitting device can be obtained.
- the second lead 202 is molded so that the outer shape is a cup shape having a truncated cone shape or an elliptic truncated cone shape.
- the present invention is not limited to this.
- the side (reflecting mirror part) may be molded in a concave mirror shape.
- the light-emitting element 1 is similar to Example 1, provided that the first electrode and the second electrode are provided on one main surface of the substrate. As long as it has such a configuration, it may be an LED chip that emits light of any wavelength (color) or an LD chip.
- FIG. 48 to 50 are schematic views for explaining an application example of the manufacturing method of the light emitting device of the fourth embodiment, and FIG. 48 shows an example in which a resin mixed with a fluorescent material is filled.
- FIG. 49 is a diagram illustrating an example of filling a transparent resin into a convex lens shape
- FIG. 50 is a diagram illustrating an example of molding the transparent resin so that the outer shape is a rectangular parallelepiped shape.
- the second lead 202 is filled with the molding dies 4f and 4g to fill the transparent resin 3.
- the resin 7 mixed with the fluorescent material is poured to a depth that allows the light emitting layer of the light emitting element 1 to be carried.
- the resin 3b is poured again.
- the resin 3b poured at this time may be a transparent resin or a colored resin.
- the resin is cured, the resin around the first lead 201 is removed with a carbon dioxide laser or the like, and the first lead 201 is completely exposed, and then the second lead is removed. It is only necessary to cut the 202.
- the exposed surface (light output surface) of the transparent resin 3 filled in the cup 202 can be formed into a convex lens shape or a Fresnel lens shape.
- the light emitting device of Example 4 has a force that provides the transparent resin 3 only in the cup of the second lead (cup-shaped lead) 202.
- the transparent resin 3 may be molded so that the outer shape is a rectangular parallelepiped, as in the light-emitting devices of Example 2 and Example 3.
- the second lead The transparent resin 3 may be poured from the through-hole 202b of 202 to fill the rectangular space.
- the light output surface may be molded so as to have a convex lens shape or a Fresnel lens shape.
- FIGS. 51 to 53 are schematic views showing application examples of the light emitting device of the fourth embodiment.
- FIG. 51 is a plan view when the display device is viewed from the display surface side
- FIG. FIG. 53 is an enlarged view of one light emitting device of FIG. 52.
- the light-emitting device of Example 4 has substantially the same dimensions as the second lead (cup-shaped lead) 202 on which the light-emitting element 1 is mounted, and can be very miniaturized. Therefore, as shown in FIGS. 51 and 52, for example, a light emitting device LED (R) equipped with a red light emitting device, a light emitting device LED (G) equipped with a green light emitting device, a blue light emitting device.
- a light emitting device LED (B) equipped with is placed on a printed wiring board (two-dimensional plane) 9 as a set, a display device using the light emitting device can be manufactured.
- the second lead 202 of each light emitting device LED is, for example, as shown in FIGS.
- a solid electrode (common electrode) 9b provided on one main surface of the insulating substrate 9a, for example, Electrical connection is made with a high melting point solder 10 such as an alloy having a composition ratio of Sn, Ag, Cu of approximately 96.5: 3: 0.5.
- the material for connecting the second lead and the solid electrode 9b is not limited to the high melting point of the composition ratio, and an appropriate material may be appropriately selected from known materials.
- a through-hole penetrating the back surface is provided in the insulating substrate 9a and the solid electrode 9b in a region overlapping with the first lead 201 of each light emitting device LED and in the vicinity thereof.
- An independent electrode pattern (control electrode) 9c that is paired with the first lead 201 of each light emitting device LED is provided on the back surface of the surface on which the solid electrode 9b of the insulating substrate 9a is provided, Using the connecting conductor 9d as shown in FIG. 52 and FIG. 53 and the high-melting point solder 10 such as an alloy having a composition ratio of Sn, Ag, Cu of approximately 96.5: 3: 0.5, the first lead 201 and The electrode pattern 9c is electrically connected.
- the material for connecting the second lead and the solid electrode 9b is not limited to the high melting point solder having the above composition ratio, and an appropriate material may be appropriately selected from known materials.
- each electrode pattern 9c is connected to a controller capable of controlling the application of voltage for each electrode pattern, although not shown.
- the controller outputs a signal only to the electrode pattern connected to the first lead 201 of the light emitting device LED that emits light. Therefore, for example, a light emitting device LED (R) equipped with a pair of red light emitting elements, a light emitting device LED (G) equipped with a green light emitting element, a light emitting device LED (with a blue light emitting element ( In B), by changing the combination of light emitting devices that emit light, a display device in which the one set of light emitting devices is used as one pixel can be realized.
- a display device using such a light-emitting device can also be realized by using, for example, a conventional light-emitting device or the light-emitting devices of Examples 1 to 3.
- each lead is placed outside the reflecting mirror part (cup part) 202 when viewed from the light output surface.
- the mounting terminal surface is protruding. For this reason, the outer dimensions are increased, and the interval between the light emitting elements of adjacent light emitting devices is widened, so that it is difficult to visually recognize the one set of light emitting devices as one pixel.
- the external dimensions of the light-emitting device can be made as small as the external dimensions of the second lead. Therefore, the interval between the light emitting elements of adjacent light emitting devices can be narrowed, and the one set of light emitting devices can be easily recognized as one pixel visually.
- FIG. 54 and 55 are schematic views for explaining a first application example of the light-emitting device of Example 4, and FIG. 54 is a plan view of the light-emitting device viewed from the light output direction.
- FIG. 55 is a rear view of FIG.
- the light emitting device using one light emitting element has been described as an example, as shown in Figs. 37 and 38.
- the configuration and the manufacture of the light emitting device of the fourth embodiment are described.
- the method is not limited to this, and can also be applied to a light emitting device in which a plurality of light emitting elements are mounted (mounted).
- each light emitting element 1 may be mounted so that the first electrode 104 is on the through hole 202b.
- the three light emitting elements 1 may be elements that emit light of the same color (wavelength), or may be a combination of light emitting elements that emit light of different colors.
- the first lead 201 is connected to the first electrode 104 of each light emitting element 1 by the procedure described in the fourth embodiment, and the through hole 202b is filled with, for example, the transparent resin 3. .
- the three light emitting elements for example, as shown in FIG. 54, a red light emitting element 1 (R), a green light emitting element 1 (G), and a blue light emitting element If 1 (B) is installed, it is possible to manufacture a display device having one light emitting device as shown in FIG. 54 as one pixel.
- a light emitting device equipped with a red light emitting element, a light emitting device equipped with a green light emitting element, and a light emitting device equipped with a blue light emitting element for example, as shown in FIGS. 51 and 52, a light emitting device equipped with a red light emitting element, a light emitting device equipped with a green light emitting element, and a light emitting device equipped with a blue light emitting element.
- the area occupied by the light emitting devices constituting one pixel on the printed wiring board 9 can be reduced compared to the case where the three light emitting devices are arranged side by side to form one pixel, and the visual pixel size is reduced. Recognition is even
- FIG. 56 to 59 are schematic diagrams for explaining a second application example of the light-emitting device of Example 4.
- FIG. 56 is a plan view of the light emitting device as viewed from the light output direction
- FIG. 57 is a back view of FIG. 56
- FIG. 58 is a diagram showing a modification of the light emitting device shown in FIG. 59 is a rear view of FIG.
- the second lead as shown in FIGS. 54 and 55 is used.
- the second lead as shown in FIGS. 54 and 55 is used.
- one through hole 202b is formed near the center of the bottom surface of the second lead 202 (cup portion 202a). It may be formed.
- the light emitting element 1 may be mounted so that the first electrode 104 is on the through hole 202b. If the three light emitting elements 1 are light emitting elements that emit light of different colors, as shown in FIG. 57, three independent first leads 201 are provided in the through hole 202b, The first lead 201 and the first electrode 104 of each light emitting element 1 may be connected by the procedure described in the fourth embodiment, and the through hole 202b may be filled with, for example, the transparent resin 3.
- a red light emitting element 1 (R), a green light emitting element 1 (G), and a blue light emitting element 1 (B) are mounted.
- a display device having one light emitting device as shown in FIG. 56 as one pixel can be manufactured.
- a light emitting device equipped with a red light emitting element, a light emitting device equipped with a green light emitting element, and a blue light emitting element were installed. Compared with the case where three light emitting devices are arranged side by side to form a single pixel, visual pixel recognition becomes even easier.
- the light emitting device power shown in FIGS. 56 and 57 for example, red light emitting element 1 (R), green light emitting element 1 (G), blue light emitting element 1 (B)
- the first lead 201 connected to each of the light emitting elements 1 may not be independent.
- one common first lead 201 is provided in the through hole 202b of the second lead 202 (cup portion 202a), and the first light emitting element 1 has the first lead.
- the electrode 104 may be electrically connected.
- a light emitting device that outputs light of a specific color by mixing multiple colors, or a light emitting device equipped with multiple light emitting elements that emit light of the same color to increase the amount of light
- the configuration shown in FIGS. 58 and 59 can also be applied to the apparatus.
- FIG. 60 and 61 are schematic views for explaining a third application example of the light-emitting device of Example 4, and FIG. 60 is a plan view of the light-emitting device viewed from the light output direction. 61 is a rear view of FIG.
- the bottom surface of the second lead 202 (cup portion 202a) may be an ellipse (oval), and a plurality of light emitting elements may be mounted linearly.
- the first leads 201 are provided in the through holes 202b to connect the first leads 201 and the first electrodes 104 of the light emitting elements 1 to each other.
- the transparent resin 3 may be filled in 202b.
- the open end is longer.
- the light-emitting device simultaneously turns on the red light-emitting element 1 (R), the green light-emitting element 1 (G), and the blue light-emitting element 1 (B) to output white light.
- a light emitting device that emits light of a specific color mixed with a plurality of colors, or a light emitting device equipped with a plurality of light emitting elements that emit light of the same color to increase the amount of light
- one common first lead 201 may be provided inside the one through hole to connect to the first electrode 104 of each light emitting element 1. .
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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US11/659,667 US7476913B2 (en) | 2004-08-10 | 2004-08-10 | Light emitting device having a mirror portion |
JP2006531075A JP4571139B2 (ja) | 2004-08-10 | 2004-08-10 | 発光装置および発光装置の製造方法 |
PCT/JP2004/011457 WO2006016398A1 (ja) | 2004-08-10 | 2004-08-10 | 発光装置および発光装置の製造方法 |
TW094127162A TW200625684A (en) | 2004-08-10 | 2005-08-10 | Light emitting apparatus and method for manufacturing light emitting apparatus |
Applications Claiming Priority (1)
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PCT/JP2004/011457 WO2006016398A1 (ja) | 2004-08-10 | 2004-08-10 | 発光装置および発光装置の製造方法 |
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WO2006016398A1 true WO2006016398A1 (ja) | 2006-02-16 |
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PCT/JP2004/011457 WO2006016398A1 (ja) | 2004-08-10 | 2004-08-10 | 発光装置および発光装置の製造方法 |
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US (1) | US7476913B2 (ja) |
JP (1) | JP4571139B2 (ja) |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04352372A (ja) * | 1991-05-29 | 1992-12-07 | Matsushita Electron Corp | 光半導体装置 |
JPH0677537A (ja) * | 1992-08-24 | 1994-03-18 | Asahi Chem Ind Co Ltd | 発光ダイオード |
JP2001127347A (ja) * | 1999-10-25 | 2001-05-11 | Hitachi Cable Ltd | 発光ダイオードの製造方法 |
JP2002319711A (ja) * | 2001-04-20 | 2002-10-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003101121A (ja) * | 2001-09-27 | 2003-04-04 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2803742B2 (ja) | 1993-04-28 | 1998-09-24 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子及びその電極形成方法 |
EP2267798B1 (de) * | 1997-07-29 | 2015-09-30 | OSRAM Opto Semiconductors GmbH | Optoelektronisches Bauelement |
DE19746893B4 (de) * | 1997-10-23 | 2005-09-01 | Siemens Ag | Optoelektronisches Bauelement mit Wärmesenke im Sockelteil und Verfahren zur Herstellung |
JPH11251645A (ja) | 1998-02-27 | 1999-09-17 | Matsushita Electron Corp | 半導体発光装置 |
JP4109756B2 (ja) * | 1998-07-07 | 2008-07-02 | スタンレー電気株式会社 | 発光ダイオード |
JP4125848B2 (ja) * | 1999-12-17 | 2008-07-30 | ローム株式会社 | ケース付チップ型発光装置 |
JP2001352100A (ja) * | 2000-06-06 | 2001-12-21 | Rohm Co Ltd | 半導体発光素子 |
JP4066620B2 (ja) * | 2000-07-21 | 2008-03-26 | 日亜化学工業株式会社 | 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法 |
JP2002064224A (ja) * | 2000-08-18 | 2002-02-28 | Agilent Technologies Japan Ltd | 発光ダイオード及びその製造方法 |
US6541800B2 (en) * | 2001-02-22 | 2003-04-01 | Weldon Technologies, Inc. | High power LED |
JP4050482B2 (ja) * | 2001-04-23 | 2008-02-20 | 豊田合成株式会社 | 半導体発光装置 |
JP4703903B2 (ja) * | 2001-07-17 | 2011-06-15 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
JP2003158301A (ja) * | 2001-11-22 | 2003-05-30 | Citizen Electronics Co Ltd | 発光ダイオード |
DE10229067B4 (de) * | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
KR100567559B1 (ko) * | 2002-07-25 | 2006-04-05 | 마츠시다 덴코 가부시키가이샤 | 광전소자부품 |
JP2004079619A (ja) | 2002-08-12 | 2004-03-11 | Koha Co Ltd | Led装置 |
JP4131178B2 (ja) * | 2003-02-28 | 2008-08-13 | 豊田合成株式会社 | 発光装置 |
US7230280B2 (en) * | 2004-05-27 | 2007-06-12 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Collimating light from an LED device |
-
2004
- 2004-08-10 US US11/659,667 patent/US7476913B2/en not_active Expired - Fee Related
- 2004-08-10 WO PCT/JP2004/011457 patent/WO2006016398A1/ja active Application Filing
- 2004-08-10 JP JP2006531075A patent/JP4571139B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-10 TW TW094127162A patent/TW200625684A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04352372A (ja) * | 1991-05-29 | 1992-12-07 | Matsushita Electron Corp | 光半導体装置 |
JPH0677537A (ja) * | 1992-08-24 | 1994-03-18 | Asahi Chem Ind Co Ltd | 発光ダイオード |
JP2001127347A (ja) * | 1999-10-25 | 2001-05-11 | Hitachi Cable Ltd | 発光ダイオードの製造方法 |
JP2002319711A (ja) * | 2001-04-20 | 2002-10-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003101121A (ja) * | 2001-09-27 | 2003-04-04 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
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Also Published As
Publication number | Publication date |
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TW200625684A (en) | 2006-07-16 |
US20080128724A1 (en) | 2008-06-05 |
JPWO2006016398A1 (ja) | 2008-05-01 |
US7476913B2 (en) | 2009-01-13 |
JP4571139B2 (ja) | 2010-10-27 |
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