JP2011166145A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2011166145A JP2011166145A JP2011024545A JP2011024545A JP2011166145A JP 2011166145 A JP2011166145 A JP 2011166145A JP 2011024545 A JP2011024545 A JP 2011024545A JP 2011024545 A JP2011024545 A JP 2011024545A JP 2011166145 A JP2011166145 A JP 2011166145A
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- light emitting
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- 239000004065 semiconductor Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 186
- 239000000463 material Substances 0.000 description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017518 Cu Zn Inorganic materials 0.000 description 2
- 229910017752 Cu-Zn Inorganic materials 0.000 description 2
- 229910017943 Cu—Zn Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000002061 nanopillar Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018459 Al—Ge Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910002708 Au–Cu Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- 229910015367 Au—Sb Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- 229910017932 Cu—Sb Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Abstract
【解決手段】本発明による発光装置は、胴体と、上記胴体の上に突出パターンを有する第1電極と、上記胴体の上に上記第1電極と電気的に分離された第2電極と、上記突出パターンを含む第1電極の上の接合層と、上記接合層の上の発光素子と、を含む。
【選択図】図1
Description
Claims (16)
- 胴体と、
前記胴体の上に突出パターンを有する第1電極と、
前記胴体の上に前記第1電極と電気的に分離された第2電極と、
前記突出パターンを含む第1電極の上の接合層と、
前記接合層の上の発光素子と、
を含むことを特徴とする、発光装置。 - 前記接合層はAu−Snを含む金属で形成され、前記突出パターンはAuを含む金属で形成されることを特徴とする、請求項1に記載の発光装置。
- 前記突出パターンの上面及び側面は前記接合層により囲まれて配置されることを特徴とする、請求項1に記載の発光装置。
- 前記胴体はシリコン材質で形成され、前記胴体の上面には前記発光素子が設置されるキャビティが形成されたことを特徴とする、請求項1に記載の発光装置。
- 前記発光素子は、第1導電型の半導体層、活性層、及び第2導電型の半導体層を含む発光構造層が形成され、
前記発光構造層の下に前記接合層と接する伝導性支持基板と、前記発光構造層の上に前記第2電極と連結される電極を含むことを特徴とする、請求項1に記載の発光装置。 - 前記胴体と前記第1電極及び第2電極との間に絶縁層を含み、前記絶縁層はシリコン酸化膜であることを特徴とする、請求項1に記載の発光装置。
- 前記第1電極と前記接合層とはギャップ無しで密着されていることを特徴とする、請求項1に記載の発光装置。
- 前記胴体の上に絶縁層を含むことを特徴とする、請求項1に記載の発光装置。
- 前記胴体の下に基板をさらに含むことを特徴とする、請求項1に記載の発光装置。
- 胴体と、
前記胴体の上に形成された、第1電極及び前記第1電極と分離された第2電極と、
前記第1電極の上の突出パターンと、
前記第1電極及び前記突出パターンの上の発光素子と、
を含むことを特徴とする、発光装置。 - 前記突出パターンはAu−Snを含む金属で形成され、前記第1電極はAuを含む金属で形成されることを特徴とする、請求項10に記載の発光装置。
- 前記突出パターンの下面及び側面は、前記第1電極により囲まれて配置されていることを特徴とする、請求項10に記載の発光装置。
- 前記第1電極の一部は、前記発光素子と直接接触していることを特徴とする、請求項10に記載の発光装置。
- 前記胴体はシリコン材質で形成され、前記胴体の上面には前記発光素子が設置されるキャビティが形成されたことを特徴とする、請求項10に記載の発光装置。
- 前記発光素子は、第1導電型の半導体層、活性層、及び第2導電型の半導体層を含む発光構造層が形成され、
前記発光構造層の下に前記突出パターン及び第1電極と接する伝導性支持基板と、前記発光構造層の上にワイヤを介して前記第2電極と連結される電極を含むことを特徴とする、請求項10に記載の発光装置。 - 前記突出パターン及び発光素子と前記第1電極はギャップ無しで密着されていることを特徴とする、請求項10に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100011468A KR100986397B1 (ko) | 2010-02-08 | 2010-02-08 | 발광 장치 |
KR10-2010-0011468 | 2010-02-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011166145A true JP2011166145A (ja) | 2011-08-25 |
JP5266349B2 JP5266349B2 (ja) | 2013-08-21 |
Family
ID=43135189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011024545A Active JP5266349B2 (ja) | 2010-02-08 | 2011-02-08 | 発光装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8916899B2 (ja) |
EP (1) | EP2355187B1 (ja) |
JP (1) | JP5266349B2 (ja) |
KR (1) | KR100986397B1 (ja) |
CN (1) | CN102169948B (ja) |
TW (1) | TWI440230B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014183090A (ja) * | 2013-03-18 | 2014-09-29 | Oki Electric Ind Co Ltd | 透明電極構造、窒化物半導体発光ダイオード、及び透明電極成膜方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014113503A1 (en) * | 2013-01-16 | 2014-07-24 | QMAT, Inc. | Techniques for forming optoelectronic devices |
CN104241372B (zh) * | 2014-08-04 | 2020-05-26 | 台州市一能科技有限公司 | 宽禁带半导体器件及其制备方法 |
US11177192B2 (en) * | 2018-09-27 | 2021-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including heat dissipation structure and fabricating method of the same |
US11515456B2 (en) * | 2019-02-21 | 2022-11-29 | Innolux Corporation | LED with light adjusting layer extending past the LED |
CN114822282B (zh) * | 2021-01-29 | 2023-11-28 | 京东方科技集团股份有限公司 | 显示面板、显示装置和制备显示面板的方法 |
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TWI440230B (zh) | 2014-06-01 |
TW201131838A (en) | 2011-09-16 |
CN102169948B (zh) | 2016-01-06 |
US20110193127A1 (en) | 2011-08-11 |
JP5266349B2 (ja) | 2013-08-21 |
US8916899B2 (en) | 2014-12-23 |
EP2355187A3 (en) | 2014-07-02 |
CN102169948A (zh) | 2011-08-31 |
KR100986397B1 (ko) | 2010-10-08 |
EP2355187A2 (en) | 2011-08-10 |
EP2355187B1 (en) | 2019-05-22 |
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