JP2008172239A - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
- Publication number
- JP2008172239A JP2008172239A JP2008001446A JP2008001446A JP2008172239A JP 2008172239 A JP2008172239 A JP 2008172239A JP 2008001446 A JP2008001446 A JP 2008001446A JP 2008001446 A JP2008001446 A JP 2008001446A JP 2008172239 A JP2008172239 A JP 2008172239A
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- JP
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- Prior art keywords
- led
- recess
- led chip
- package
- led package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】LEDパッケージ20は、実装領域を形成する凹部を備えるパッケージ本体22と、凹部の底面に露出されるようにパッケージ本体22に装着された第1及び第2リードフレーム23a,23bと、第1及び第2リードフレーム23a,23bのそれぞれに電気的に接続されるように凹部の底面に実装されたLEDチップ21と、透明樹脂と蛍光体が混合されて構成され、LEDチップ21を覆うように凹部内に形成された封止体24とを含み、LEDチップ21の上面から封止体24の上面までの距離はLEDチップ21の高さの1倍乃至5倍である。
【選択図】図2
Description
22,32 パッケージ本体
23a,33a 第1リードフレーム
23b,33b 第2リードフレーム
24,34 封止体
35 レンズ
Claims (8)
- 実装領域を形成する凹部を備えるパッケージ本体と、
前記凹部の底面に露出されるように前記パッケージ本体に装着された第1及び第2リードフレームと、
前記第1及び第2リードフレームのそれぞれに電気的に接続されるように前記凹部の底面に実装されたLEDチップと、
透明樹脂と蛍光体が混合されて構成され、前記LEDチップを覆うように前記凹部内に形成された封止体と、を含み、
前記LEDチップの上面から前記封止体の上面までの距離は前記LEDチップの高さの1倍乃至5倍であることを特徴とするLEDパッケージ。 - 前記蛍光体は、前記透明樹脂の重量の30〜300%の重量を有することを特徴とする請求項1に記載のLEDパッケージ。
- 前記凹部の底面の幅は、前記LEDチップの幅の1.5倍乃至3倍であることを特徴とする請求項1または2に記載のLEDパッケージ。
- 前記封止体の高さは、前記凹部の深さと同一であることを特徴とする請求項1から3のいずれか1つに記載のLEDパッケージ。
- 前記凹部は、前記底面に対して、上方に面するように傾斜した内側壁を有することを特徴とする請求項1から4のいずれか1つに記載のLEDパッケージ。
- 前記凹部の横断面は、円形または四角形であることを特徴とする請求項1から5のいずれか1つに記載のLEDパッケージ。
- 前記蛍光体は、前記LEDチップから放出された光を吸収し、白色光が出力されるように、互いに異なる波長の光を放出する複数種の物質からなることを特徴とする請求項1から6のいずれか1つに記載のLEDパッケージ。
- 前記パッケージ本体の上方から前記凹部を覆うよう形成されたレンズをさらに含むことを特徴とする請求項1から7のいずれか1つに記載のLEDパッケージ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070002599A KR20080065451A (ko) | 2007-01-09 | 2007-01-09 | Led 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008172239A true JP2008172239A (ja) | 2008-07-24 |
Family
ID=39631702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008001446A Pending JP2008172239A (ja) | 2007-01-09 | 2008-01-08 | Ledパッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080179616A1 (ja) |
JP (1) | JP2008172239A (ja) |
KR (1) | KR20080065451A (ja) |
CN (1) | CN101222012A (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI360238B (en) | 2007-10-29 | 2012-03-11 | Epistar Corp | Photoelectric device |
KR101114150B1 (ko) | 2009-10-19 | 2012-03-09 | 엘지이노텍 주식회사 | 발광 소자 |
US20130043502A1 (en) * | 2010-05-31 | 2013-02-21 | Panasonic Corporation | Light emitting device and method for manufacturing the same |
JP2012234955A (ja) * | 2011-04-28 | 2012-11-29 | Toshiba Corp | Ledパッケージ及びその製造方法 |
WO2013010389A1 (zh) | 2011-07-15 | 2013-01-24 | 中国科学院半导体研究所 | 发光二极管封装结构及其制造方法 |
KR101330252B1 (ko) * | 2011-09-09 | 2013-11-15 | 서울바이오시스 주식회사 | 발광 다이오드 패키지 |
KR102075655B1 (ko) * | 2013-06-24 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
CN112940509B (zh) | 2015-01-28 | 2023-03-28 | 美国陶氏有机硅公司 | 弹性体组合物及其应用 |
GB201613397D0 (en) | 2016-08-03 | 2016-09-14 | Dow Corning | Cosmetic composition comprising silicone materials |
GB201613399D0 (en) | 2016-08-03 | 2016-09-14 | Dow Corning | Cosmetic composition comprising silicone materials |
GB201707437D0 (en) | 2017-05-09 | 2017-06-21 | Dow Corning | Lamination adhesive compositions and their applications |
GB201707439D0 (en) | 2017-05-09 | 2017-06-21 | Dow Corning | Lamination Process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10261821A (ja) * | 1997-01-15 | 1998-09-29 | Toshiba Corp | 半導体発光装置及びその製造方法 |
WO2006016398A1 (ja) * | 2004-08-10 | 2006-02-16 | Renesas Technology Corp. | 発光装置および発光装置の製造方法 |
JP2006080565A (ja) * | 2001-09-03 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 半導体発光デバイスの製造方法 |
JP2007110060A (ja) * | 2005-09-15 | 2007-04-26 | Nichia Chem Ind Ltd | 発光装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP3749243B2 (ja) * | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス,発光装置及び半導体発光デバイスの製造方法 |
DE10213294B4 (de) * | 2002-03-25 | 2015-05-13 | Osram Gmbh | Verwendung eines UV-beständigen Polymers in der Optoelektronik sowie im Außenanwendungsbereich, UV-beständiges Polymer sowie optisches Bauelement |
US7176501B2 (en) * | 2003-05-12 | 2007-02-13 | Luxpia Co, Ltd | Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same |
DE112004000955T5 (de) * | 2003-06-06 | 2006-04-20 | Sharp K.K. | Optischer Sender |
JP2005064233A (ja) * | 2003-08-12 | 2005-03-10 | Stanley Electric Co Ltd | 波長変換型led |
KR100605211B1 (ko) * | 2004-04-07 | 2006-07-31 | 엘지이노텍 주식회사 | 형광체 및 이를 이용한 백색 발광다이오드 |
US20060006397A1 (en) * | 2004-07-09 | 2006-01-12 | Chua Janet B Y | Device and method for emitting output light using group IIA/IIB selenide sulfur-based phosphor material |
TWM268733U (en) * | 2004-09-10 | 2005-06-21 | Sen Tech Co Ltd | LED packaging structure containing fluorescent plate |
JP2006190888A (ja) * | 2005-01-07 | 2006-07-20 | Stanley Electric Co Ltd | 表面実装型led |
KR101139891B1 (ko) * | 2005-01-31 | 2012-04-27 | 렌슬러 폴리테크닉 인스티튜트 | 확산 반사면을 구비한 발광 다이오드 소자 |
TWI248220B (en) * | 2005-04-14 | 2006-01-21 | Genesis Photonics Inc | White light device having light-emitting diode |
KR100820529B1 (ko) * | 2006-05-11 | 2008-04-08 | 엘지이노텍 주식회사 | 발광 장치 및 그 제조방법, 면 발광 장치 |
-
2007
- 2007-01-09 KR KR1020070002599A patent/KR20080065451A/ko not_active Application Discontinuation
-
2008
- 2008-01-08 CN CN200810002321.XA patent/CN101222012A/zh active Pending
- 2008-01-08 JP JP2008001446A patent/JP2008172239A/ja active Pending
- 2008-01-09 US US12/007,371 patent/US20080179616A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10261821A (ja) * | 1997-01-15 | 1998-09-29 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2006080565A (ja) * | 2001-09-03 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 半導体発光デバイスの製造方法 |
WO2006016398A1 (ja) * | 2004-08-10 | 2006-02-16 | Renesas Technology Corp. | 発光装置および発光装置の製造方法 |
JP2007110060A (ja) * | 2005-09-15 | 2007-04-26 | Nichia Chem Ind Ltd | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101222012A (zh) | 2008-07-16 |
US20080179616A1 (en) | 2008-07-31 |
KR20080065451A (ko) | 2008-07-14 |
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