KR850008558A - 애벌란시 광전 다이오우드의 제조방법 및 애벌란시 광전 다이오우드 - Google Patents

애벌란시 광전 다이오우드의 제조방법 및 애벌란시 광전 다이오우드 Download PDF

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KR850008558A
KR850008558A KR1019850003768A KR850003768A KR850008558A KR 850008558 A KR850008558 A KR 850008558A KR 1019850003768 A KR1019850003768 A KR 1019850003768A KR 850003768 A KR850003768 A KR 850003768A KR 850008558 A KR850008558 A KR 850008558A
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semiconductor layer
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semiconductor
avalanche photodiode
impurity
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가즈히또 야스다 (외 1)
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야마모도 다꾸마
후지쓰 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)

Abstract

내용 없음

Description

애벌란시 광전 다이오우드의 제조방법 및 애벌란시 광전 다이오우드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따라 제조된 애벌란시 광전다이오우드의 단면도.
제4도 내지 제6도는 본 발명에 따르는 애벌란시 광전 다이오우드의 제조방법의 단계들에 있어서의 애벌란시 광전 다이오우드의 단면도.
제7도는 본 발명에 따라 제조된 애벌란시 광전 다이오우드의 애벌란시 증배의 분포를 나타내는 다이어그램.

Claims (13)

  1. 광흡수층으로 이루어지는 반도체 몸체상에 제1반도체 층을 형성하기 위하여 제1결정성장을 수행하는 단계, 제1반도체층을 메사의 형태로 두기 위하여 상기 제1반도체층의 주변을 선택적으로 에칭시키는 단계, 상기 메사-에칭된 제1 반도체층상에 제2반도체층을 형성시키기 위하여 제2결정성장을 수행하는 단계, 그리고 상기 제2 반도체층의 상부 표면으로부터 상기 제1 반도체층의 내부로 연장되고 제1 불순물 도우핑 영역을 형성시키는 단계, 이로써 p-n 접합은 상기 제1 반도체층의 상기 내부에 규정되고 상기 제1불순물도우핑 영역이 형성되지 않는 상기 제1반도체층의 나머지 부분은 증배층으로 규정되는, 상기 단계들로 이루어지는 것을 특징으로 하는 애벌란시 광전 다이오우드의 제조방법.
  2. 제1항에 있어서, 상기 메사-에칭된 제1 반도체층의 노출된 표면이 상기 제2 결정성장 단계를 수행하기 바로 전에 뒤-용해되는 것을 특징으로 하는 애벌란시 광전다이오우드의 제조방법.
  3. 제1항에 있어서, 상기 제1 반도체층은 상기 제3반도체층상의 제3 반도체와 제4반도체로 이루어지는, 상기 제4 반도체층은 상기 제3반도체층보다 더 낮은 도우핑제 농도를 갖고, 상기 p-n 접합은 상기 제4반도체층내에 형성되는 것을 특징으로 하는 애벌란시 광전 다이오우드의 제조방법.
  4. 제1항에 있어서, 상기 광흡수층은 InGaAs의 층인 것을 특징으로 하는 애벌란시 광전 다이오우드의 제조방법.
  5. 제1항에 있어서, 상기 제1반도체층은 InP, InGaAs 또는 InGaAs의 층인 것을 특징으로 하는 애벌란시 광전 다이오우드의 제조방법.
  6. 제1항에 있어서, 전이층은 상기 광흡수층과 상기 제1반도체층 사이에 형성되며 상기 전이층은 상기 광 흡수층과 상기 제1반도체층의 에너지띠간격 사이의 중간 에너지 띠간격을 갖는 것을 특징으로 하는 애벌란시 광전 다이오우드의 제조방법.
  7. 제1항에 있어서, 상기 제2 반도체층의 상기 제1 불순물 도우핑 영역의 주변을 따라 불순불을 선택적으로 도우핑시킴으로써 경계 고리영역을 형성시키는 단계로 더 이루어지는 것을 특징으로 하는 애벌란시 광전 다이오우드의 제조방법.
  8. 광 흡수층으로 이루어지는 반도체 몸체, 상기 반도체 몸체상에 제1 결정성장에 의하여 형성된 제1반도체 층을 메사의 형태로 두기위하여 선택적으로 에칭된 주변을 갖는제1 반도체층, 제2 결정성장에 의하여 상기한 메사에칭된 제1반도체 층상에 형성된 제2 반도체층, 상기 제2반도체층의 상부 표면으로부터 상기 제1반도체층의 내부로 연장되어, p-n 접합이 상기 제1반도체층 내부에 존재하도록한 제1불순물 도우핑 영역, 상기 제1불순물 도우핑 영역이 연장되지 않는 상기 제1반도체층의 나머지 부분에 의해 규정된 증배층, 으로 이루어지는 것을 특징으로 하는-애벌란시 광전다이오우드.
  9. 제8항에 있어서, 상기 제1 반도체층은 제3반도체층과 이 제3반도체층상에 제4반도체층으로 이루어지는 상기 제4반도체층은 상기 제3 반도체층보다 더 낮은 도우핑제 농도를 갖고 상기 p-n접합은 상기 제4 반도체층에 존재하는 것을 특징으로 하는 애벌란시 광전 다이오우드.
  10. 제8항에 있어서, 상기 광흡수층은 InGaAs층인 것을 특징으로 하는 애벌란시 광전 다이오우드.
  11. 제8항에 있어서, 상기 제1반도체층은 InP, InGaAs 또는 InGaAsP 층인 것을 특징으로 하는 애벌란시 광전 다이오우드.
  12. 제8항에 있어서, 상기 광흡수층과 상기 제1반도체층 사이에 전이층으로 더 이루어지는 상기 전이층은 상기 광 흡수층과 상기 제1반도체층 사이의 중간에너지 따 간격을 갖는 것을 특징으로 하는 애벌란시 광전다이오우드.
  13. 제8항에 있어서, 상기 제2 반도체층의 상기 제1 불순물 영역의 주변을 따라 제2불순물 도우핑영역으로 이루어지는 경계 고리 영역으로 더 이루어지는 것을 특징으로 하는 애벌란시 광전 다이오우드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8503768A 1984-05-31 1985-05-30 Manufacture of semiconductor a photo diode and avalanche photodiode KR900000209B1 (en)

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Application Number Priority Date Filing Date Title
JP59-109434 1984-05-31
JP59109434A JPH0824199B2 (ja) 1984-05-31 1984-05-31 半導体受光素子の製造方法

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KR850008558A true KR850008558A (ko) 1985-12-18
KR900000209B1 KR900000209B1 (en) 1990-01-23

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US (1) US4840916A (ko)
EP (1) EP0163546B1 (ko)
JP (1) JPH0824199B2 (ko)
KR (1) KR900000209B1 (ko)
CA (1) CA1256549A (ko)
DE (1) DE3580189D1 (ko)

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EP0163546B1 (en) 1990-10-24
DE3580189D1 (de) 1990-11-29
US4840916A (en) 1989-06-20
JPH0824199B2 (ja) 1996-03-06
JPS60254675A (ja) 1985-12-16
CA1256549A (en) 1989-06-27
KR900000209B1 (en) 1990-01-23
EP0163546A3 (en) 1987-12-09
EP0163546A2 (en) 1985-12-04

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