KR900000209B1 - Manufacture of semiconductor a photo diode and avalanche photodiode - Google Patents
Manufacture of semiconductor a photo diode and avalanche photodiodeInfo
- Publication number
- KR900000209B1 KR900000209B1 KR8503768A KR850003768A KR900000209B1 KR 900000209 B1 KR900000209 B1 KR 900000209B1 KR 8503768 A KR8503768 A KR 8503768A KR 850003768 A KR850003768 A KR 850003768A KR 900000209 B1 KR900000209 B1 KR 900000209B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor layer
- avalanche photodiode
- semiconductor
- manufacture
- photo diode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/955—Melt-back
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59109434A JPH0824199B2 (ja) | 1984-05-31 | 1984-05-31 | 半導体受光素子の製造方法 |
JP59-109434 | 1984-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850008558A KR850008558A (ko) | 1985-12-18 |
KR900000209B1 true KR900000209B1 (en) | 1990-01-23 |
Family
ID=14510145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8503768A KR900000209B1 (en) | 1984-05-31 | 1985-05-30 | Manufacture of semiconductor a photo diode and avalanche photodiode |
Country Status (6)
Country | Link |
---|---|
US (1) | US4840916A (ko) |
EP (1) | EP0163546B1 (ko) |
JP (1) | JPH0824199B2 (ko) |
KR (1) | KR900000209B1 (ko) |
CA (1) | CA1256549A (ko) |
DE (1) | DE3580189D1 (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8817886D0 (en) * | 1988-07-27 | 1988-09-01 | British Telecomm | Avalanche photodiode structure |
JPH02159775A (ja) * | 1988-12-14 | 1990-06-19 | Toshiba Corp | 半導体受光素子及びその製造方法 |
JPH02202071A (ja) * | 1989-01-31 | 1990-08-10 | Toshiba Corp | 半導体受光素子及びその製造方法 |
DE69127644T2 (de) * | 1990-03-02 | 1998-02-05 | Canon Kk | Fotoelektrische Übertragungsvorrichtung |
US5260560A (en) * | 1990-03-02 | 1993-11-09 | Canon Kabushiki Kaisha | Photoelectric transfer device |
US5596186A (en) * | 1993-12-08 | 1997-01-21 | Nikon Corporation | High sensitivity silicon avalanche photodiode |
JP2762939B2 (ja) * | 1994-03-22 | 1998-06-11 | 日本電気株式会社 | 超格子アバランシェフォトダイオード |
US5446308A (en) * | 1994-04-04 | 1995-08-29 | General Electric Company | Deep-diffused planar avalanche photodiode |
JP4010337B2 (ja) * | 1995-02-02 | 2007-11-21 | 住友電気工業株式会社 | pin型受光素子およびpin型受光素子の製造方法 |
US5610416A (en) * | 1995-02-16 | 1997-03-11 | Hewlett-Packard Company | Avalanche photodiode with epitaxially regrown guard rings |
JPH0945954A (ja) * | 1995-07-31 | 1997-02-14 | Mitsubishi Electric Corp | 半導体素子,及び半導体素子の製造方法 |
US5866936A (en) * | 1997-04-01 | 1999-02-02 | Hewlett-Packard Company | Mesa-structure avalanche photodiode having a buried epitaxial junction |
JPH10326907A (ja) * | 1997-05-26 | 1998-12-08 | Mitsubishi Electric Corp | 受光素子,及びその製造方法 |
JP4220688B2 (ja) * | 2001-02-26 | 2009-02-04 | 日本オプネクスト株式会社 | アバランシェホトダイオード |
US7072557B2 (en) * | 2001-12-21 | 2006-07-04 | Infinera Corporation | InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core |
ES2616248T3 (es) * | 2002-02-01 | 2017-06-12 | Picometrix, Llc | Fotodiodo PIN de alta velocidad con respuesta incrementada |
WO2003065418A2 (en) * | 2002-02-01 | 2003-08-07 | Picometrix, Inc. | Planar avalanche photodiode |
CN1633699A (zh) * | 2002-02-01 | 2005-06-29 | 派克米瑞斯公司 | 电荷控制雪崩光电二极管及其制造方法 |
JP4755854B2 (ja) * | 2005-06-02 | 2011-08-24 | 富士通株式会社 | 半導体受光装置及びその製造方法 |
FR3000608B1 (fr) * | 2012-12-31 | 2015-03-06 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche et procede de fabrication d'une telle structure |
FR3000610B1 (fr) | 2012-12-31 | 2015-03-06 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode |
JP2018156984A (ja) * | 2017-03-15 | 2018-10-04 | 株式会社東芝 | 光検出素子 |
US11769782B2 (en) * | 2018-05-02 | 2023-09-26 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and imaging apparatus |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649581A (en) * | 1979-09-28 | 1981-05-06 | Nec Corp | Preparation of hetero-junction light detector |
JPS5671985A (en) * | 1979-11-19 | 1981-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving system |
JPS5681984A (en) * | 1979-12-06 | 1981-07-04 | Mitsubishi Electric Corp | Semiconductor device |
EP0043734B1 (en) * | 1980-07-08 | 1985-10-16 | Fujitsu Limited | Avalanche photodiodes |
JPS5731183A (en) * | 1980-08-01 | 1982-02-19 | Nippon Telegr & Teleph Corp <Ntt> | Compound semiconductor avalanche photodiode |
JPS5793585A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor photoreceiving element |
JPS57112084A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Avalanche photodiode |
-
1984
- 1984-05-31 JP JP59109434A patent/JPH0824199B2/ja not_active Expired - Lifetime
-
1985
- 1985-05-24 CA CA000482350A patent/CA1256549A/en not_active Expired
- 1985-05-30 KR KR8503768A patent/KR900000209B1/ko not_active IP Right Cessation
- 1985-05-31 EP EP85303862A patent/EP0163546B1/en not_active Expired - Lifetime
- 1985-05-31 DE DE8585303862T patent/DE3580189D1/de not_active Expired - Fee Related
-
1987
- 1987-08-21 US US07/090,432 patent/US4840916A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3580189D1 (de) | 1990-11-29 |
KR850008558A (ko) | 1985-12-18 |
EP0163546A3 (en) | 1987-12-09 |
CA1256549A (en) | 1989-06-27 |
JPH0824199B2 (ja) | 1996-03-06 |
EP0163546A2 (en) | 1985-12-04 |
JPS60254675A (ja) | 1985-12-16 |
US4840916A (en) | 1989-06-20 |
EP0163546B1 (en) | 1990-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19940114 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |