ES2616248T3 - Fotodiodo PIN de alta velocidad con respuesta incrementada - Google Patents

Fotodiodo PIN de alta velocidad con respuesta incrementada Download PDF

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Publication number
ES2616248T3
ES2616248T3 ES03708942.2T ES03708942T ES2616248T3 ES 2616248 T3 ES2616248 T3 ES 2616248T3 ES 03708942 T ES03708942 T ES 03708942T ES 2616248 T3 ES2616248 T3 ES 2616248T3
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semiconductor layer
concentration
type semiconductor
holes
electrons
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Cheng C. Ko
Barry Levine
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Picometrix LLC
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Picometrix LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

Un fotodiodo (10) PIN que comprende: una primera capa (14) semiconductora tipo p; una capa (18) semiconductora tipo n; una segunda capa (16) semiconductora tipo p dispuesta entre la primera capa (14) semiconductora tipo p y la capa (18) semiconductora tipo n de tal manera que el segundo semiconductor (16) tipo p está directamente adyacente a la capa (18) semiconductora, teniendo la segunda capa (16) semiconductora tipo p una concentración de dopaje graduada; un sustrato (20), creciendo la capa (18) semiconductora tipo n sobre el sustrato (20); una capa (12) de ánodo para recolectar agujeros; una capa (22) de cátodo para recolectar electrones; en el que la concentración de dopaje graduada define una primera concentración (15) adyacente a la primera capa (14) semiconductora tipo p y una segunda concentración (17) adyacente a la capa (18) semiconductora tipo n, y además en el que la primera concentración (15) es mayor que la segunda concentración (17); en el que la luz incidente es absorbida en la segunda capa (16) semiconductora tipo p siendo absorbida la luz incidente en la segunda concentración (17) que es parte de la segunda capa (16) semiconductora tipo p produce electrones y agujeros que derivan al ánodo y cátodo; en el que los electrones generados en la segunda concentración (17) que es parte de la segunda capa (16) semiconductora tipo p alcanzan el cátodo con su velocidad de saturación y son recolectados, los agujeros generados en la segunda concentración (17) que es parte de la segunda la capa (16) semiconductora tipo p se desplazan hasta el ánodo (12), en el que la luz incidente que se absorbe en la primera concentración (15) que es parte de la segunda capa (16) semiconductora tipo p produce electrones y agujeros, en donde los agujeros se recolectan en la primera concentración (15) que es parte; y en el que dichos electrones en la primera concentración (15) que es parte están sujetos a un pseudocampo capaz de proporcionarles una velocidad electrónica de sobreexpansión, siendo regido el pseudocampo por la siguiente ecuación: donde k es la constante de Boltzman, T es la temperatura, q es la carga de un electrón y el valor es el gradiente de concentración de dopaje, y en el que la primera concentración (15) está situada en una posición xo y define una concentración po, y además en el que la concentración de dopaje graduada se rige por la siguiente ecuación: sobre la profundidad D de la segunda capa (16) semiconductora tipo p para todo x y para D mayor que cero.

Description

imagen1
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Claims (1)

  1. imagen1
ES03708942.2T 2002-02-01 2003-02-03 Fotodiodo PIN de alta velocidad con respuesta incrementada Expired - Lifetime ES2616248T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35384902P 2002-02-01 2002-02-01
US353849P 2002-02-01
PCT/US2003/003181 WO2003065416A2 (en) 2002-02-01 2003-02-03 Enhanced photodetector

Publications (1)

Publication Number Publication Date
ES2616248T3 true ES2616248T3 (es) 2017-06-12

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ES03708942.2T Expired - Lifetime ES2616248T3 (es) 2002-02-01 2003-02-03 Fotodiodo PIN de alta velocidad con respuesta incrementada

Country Status (10)

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US (1) US7078741B2 (es)
EP (1) EP1470574B9 (es)
JP (1) JP5021888B2 (es)
KR (1) KR100766174B1 (es)
CN (1) CN100474634C (es)
AU (1) AU2003212899A1 (es)
CA (1) CA2474556C (es)
ES (1) ES2616248T3 (es)
HK (1) HK1085841A1 (es)
WO (1) WO2003065416A2 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2616248T3 (es) 2002-02-01 2017-06-12 Picometrix, Llc Fotodiodo PIN de alta velocidad con respuesta incrementada
WO2003065418A2 (en) 2002-02-01 2003-08-07 Picometrix, Inc. Planar avalanche photodiode
WO2005114712A1 (en) * 2004-04-30 2005-12-01 Picometrix, Llc Planar avalanche photodiode
JP4992446B2 (ja) * 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
EP2466649A1 (en) * 2010-12-16 2012-06-20 Alcatel Lucent A double-collector uni-travelling-carrier photodiode
JP2015520950A (ja) * 2012-05-17 2015-07-23 ピコメトリクス、エルエルシー 平面のアバランシェ・フォトダイオード
EP2808908B1 (en) 2013-05-31 2023-04-19 Mellanox Technologies, Ltd. High-speed photodetector
US9786855B2 (en) 2014-12-30 2017-10-10 Indian Institute Of Technology Bombay Micro electro mechanical system (MEMS) based wide-band polymer photo-detector
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CN110880521A (zh) * 2018-09-06 2020-03-13 夏普株式会社 摄像面板及其制造方法

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Publication number Publication date
US20050056861A1 (en) 2005-03-17
CA2474556A1 (en) 2003-08-07
CN1701445A (zh) 2005-11-23
CA2474556C (en) 2014-10-07
EP1470574A4 (en) 2011-02-16
EP1470574B9 (en) 2017-04-12
EP1470574B1 (en) 2016-11-30
US7078741B2 (en) 2006-07-18
JP5021888B2 (ja) 2012-09-12
JP2005516413A (ja) 2005-06-02
WO2003065416A3 (en) 2004-03-11
AU2003212899A1 (en) 2003-09-02
HK1085841A1 (en) 2006-09-01
CN100474634C (zh) 2009-04-01
KR100766174B1 (ko) 2007-10-10
WO2003065416A2 (en) 2003-08-07
KR20040097991A (ko) 2004-11-18
EP1470574A2 (en) 2004-10-27

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