HK1085841A1 - Enhanced photodetector - Google Patents

Enhanced photodetector

Info

Publication number
HK1085841A1
HK1085841A1 HK06105823.6A HK06105823A HK1085841A1 HK 1085841 A1 HK1085841 A1 HK 1085841A1 HK 06105823 A HK06105823 A HK 06105823A HK 1085841 A1 HK1085841 A1 HK 1085841A1
Authority
HK
Hong Kong
Prior art keywords
enhanced photodetector
photodetector
enhanced
Prior art date
Application number
HK06105823.6A
Other languages
English (en)
Inventor
Cheng C Ko
Barry Levine
Original Assignee
Picometrix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picometrix Inc filed Critical Picometrix Inc
Publication of HK1085841A1 publication Critical patent/HK1085841A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
HK06105823.6A 2002-02-01 2006-05-19 Enhanced photodetector HK1085841A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35384902P 2002-02-01 2002-02-01
PCT/US2003/003181 WO2003065416A2 (en) 2002-02-01 2003-02-03 Enhanced photodetector

Publications (1)

Publication Number Publication Date
HK1085841A1 true HK1085841A1 (en) 2006-09-01

Family

ID=27663260

Family Applications (1)

Application Number Title Priority Date Filing Date
HK06105823.6A HK1085841A1 (en) 2002-02-01 2006-05-19 Enhanced photodetector

Country Status (10)

Country Link
US (1) US7078741B2 (xx)
EP (1) EP1470574B9 (xx)
JP (1) JP5021888B2 (xx)
KR (1) KR100766174B1 (xx)
CN (1) CN100474634C (xx)
AU (1) AU2003212899A1 (xx)
CA (1) CA2474556C (xx)
ES (1) ES2616248T3 (xx)
HK (1) HK1085841A1 (xx)
WO (1) WO2003065416A2 (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1470574B9 (en) 2002-02-01 2017-04-12 Picometrix, LLC High speed pin photodiode with increased responsivity
US7348607B2 (en) 2002-02-01 2008-03-25 Picometrix, Llc Planar avalanche photodiode
CN100541721C (zh) * 2004-04-30 2009-09-16 派克米瑞斯有限责任公司 平面型雪崩光电二极管
JP4992446B2 (ja) * 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
EP2466649A1 (en) * 2010-12-16 2012-06-20 Alcatel Lucent A double-collector uni-travelling-carrier photodiode
JP2015520950A (ja) * 2012-05-17 2015-07-23 ピコメトリクス、エルエルシー 平面のアバランシェ・フォトダイオード
EP2808908B1 (en) 2013-05-31 2023-04-19 Mellanox Technologies, Ltd. High-speed photodetector
US9786855B2 (en) 2014-12-30 2017-10-10 Indian Institute Of Technology Bombay Micro electro mechanical system (MEMS) based wide-band polymer photo-detector
CN105097964B (zh) * 2015-07-21 2017-03-08 中国电子科技集团公司第三十八研究所 一种有源区高斯掺杂型pπn紫外探测器
CN110880521A (zh) * 2018-09-06 2020-03-13 夏普株式会社 摄像面板及其制造方法

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FR2319980A1 (fr) * 1975-07-28 1977-02-25 Radiotechnique Compelec Dispositif optoelectronique semi-conducteur reversible
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode
US4186355A (en) * 1978-03-31 1980-01-29 General Motors Corporation Semiconductor diode laser with increased frequency tuning range
US4236069A (en) * 1978-10-16 1980-11-25 Varo, Inc. Avalanche photodiode gain control system
JPH0824199B2 (ja) * 1984-05-31 1996-03-06 富士通株式会社 半導体受光素子の製造方法
GB8417303D0 (en) * 1984-07-06 1984-08-08 Secr Defence Infra-red detector
US4686550A (en) * 1984-12-04 1987-08-11 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction semiconductor devices having a doping interface dipole
US4597004A (en) * 1985-03-04 1986-06-24 Rca Corporation Photodetector
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
US5146296A (en) * 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
US5057892A (en) * 1990-09-14 1991-10-15 Xsirius Photonics, Inc. Light responsive avalanche diode
US5365077A (en) * 1993-01-22 1994-11-15 Hughes Aircraft Company Gain-stable NPN heterojunction bipolar transistor
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EP1470574B9 (en) 2002-02-01 2017-04-12 Picometrix, LLC High speed pin photodiode with increased responsivity

Also Published As

Publication number Publication date
WO2003065416A2 (en) 2003-08-07
ES2616248T3 (es) 2017-06-12
EP1470574B1 (en) 2016-11-30
KR100766174B1 (ko) 2007-10-10
US7078741B2 (en) 2006-07-18
JP5021888B2 (ja) 2012-09-12
CA2474556C (en) 2014-10-07
EP1470574A4 (en) 2011-02-16
WO2003065416A3 (en) 2004-03-11
EP1470574B9 (en) 2017-04-12
EP1470574A2 (en) 2004-10-27
JP2005516413A (ja) 2005-06-02
CN1701445A (zh) 2005-11-23
CA2474556A1 (en) 2003-08-07
US20050056861A1 (en) 2005-03-17
AU2003212899A1 (en) 2003-09-02
CN100474634C (zh) 2009-04-01
KR20040097991A (ko) 2004-11-18

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Legal Events

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PE Patent expired

Effective date: 20230202