JP2005516413A - 拡張型光検出器 - Google Patents
拡張型光検出器 Download PDFInfo
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- JP2005516413A JP2005516413A JP2003564910A JP2003564910A JP2005516413A JP 2005516413 A JP2005516413 A JP 2005516413A JP 2003564910 A JP2003564910 A JP 2003564910A JP 2003564910 A JP2003564910 A JP 2003564910A JP 2005516413 A JP2005516413 A JP 2005516413A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 101
- 239000012535 impurity Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 3
- 230000005684 electric field Effects 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000004044 response Effects 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 6
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
本発明の好ましい実施例では、光導電用のエピタキシャル構造を提供する。この光導電構造は、傾斜不純物濃度を持つ拡張層によって性能向上のために最適化される修正型PINダイオードである。本発明の構造および製造方法に関する詳細は後述する。
式(1)を表すグラフを図4に示す。
ここで、kはボルツマン定数、Tは温度、qは電子の電荷、dp/dxは不純物濃度の傾斜である。
Claims (19)
- 第一のp型半導体層と、
n型半導体層と、
第一のp型半導体層とn型半導体層との間でn型半導体に直接接する第二のp型半導体層とを有し、第二のp型半導体層が傾斜不純物濃度を持つ光ダイオード。 - 請求項1において更に、正孔を捕捉するアノード層を有する光ダイオード。
- 請求項1において更に、電子を捕捉するカソード層を有する光ダイオード。
- 請求項1において、第一のp型半導体層がInAlAsである光ダイオード。
- 請求項1において、n型半導体層がInAlAsである光ダイオード。
- 請求項1において、第二のp型半導体層がInGaAsである光ダイオード。
- 請求項1において、傾斜不純物濃度により、第一のp型半導体層に隣接する第一濃度と、n型半導体層に隣接する第二濃度とを定義し、第一濃度が第二濃度より大である光ダイオード。
- 請求項8において、第一濃度域の長さが800〜1000オングストロームである光ダイオード。
- 光ダイオード製作方法であって、
基板を用意するステップと、
基板上に第一のp型半導体を堆積させるステップと、
基板上にn型半導体層を堆積させるステップと、
第二のp型半導体層において第一濃度から第二濃度までの傾斜をつけるステップであって、第一濃度を第二濃度より大きくするステップと、
第一のp型半導体層とn型半導体層の間に第二のp型半導体層を堆積させるステップとを含み、第二濃度がn型半導体層に直接接する、光ダイオード製作方法。 - 請求項10において更に、正孔を捕捉するためのアノードを付加するステップを含む方法。
- 請求項10において更に、電子を捕捉するためのカソードを付加するステップを含む方法。
- 請求項10において、第一のp型半導体層がInAlAsである方法。
- 請求項10において、n型半導体層がInAlAsである方法。
- 請求項10において、第二のp型半導体層がInGaAsである方法。
- 請求項17において、第二のp型半導体層がIII−V族半導体である光ダイオード。
- 請求項17において、第二のp型半導体層がInGaAsである光ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35384902P | 2002-02-01 | 2002-02-01 | |
US60/353,849 | 2002-02-01 | ||
PCT/US2003/003181 WO2003065416A2 (en) | 2002-02-01 | 2003-02-03 | Enhanced photodetector |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005516413A true JP2005516413A (ja) | 2005-06-02 |
JP2005516413A5 JP2005516413A5 (ja) | 2006-03-23 |
JP5021888B2 JP5021888B2 (ja) | 2012-09-12 |
Family
ID=27663260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003564910A Expired - Lifetime JP5021888B2 (ja) | 2002-02-01 | 2003-02-03 | 拡張型光検出器 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7078741B2 (ja) |
EP (1) | EP1470574B9 (ja) |
JP (1) | JP5021888B2 (ja) |
KR (1) | KR100766174B1 (ja) |
CN (1) | CN100474634C (ja) |
AU (1) | AU2003212899A1 (ja) |
CA (1) | CA2474556C (ja) |
ES (1) | ES2616248T3 (ja) |
HK (1) | HK1085841A1 (ja) |
WO (1) | WO2003065416A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015520950A (ja) * | 2012-05-17 | 2015-07-23 | ピコメトリクス、エルエルシー | 平面のアバランシェ・フォトダイオード |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2616248T3 (es) | 2002-02-01 | 2017-06-12 | Picometrix, Llc | Fotodiodo PIN de alta velocidad con respuesta incrementada |
WO2003065418A2 (en) | 2002-02-01 | 2003-08-07 | Picometrix, Inc. | Planar avalanche photodiode |
WO2005114712A1 (en) * | 2004-04-30 | 2005-12-01 | Picometrix, Llc | Planar avalanche photodiode |
JP4992446B2 (ja) * | 2006-02-24 | 2012-08-08 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びにカメラ |
EP2466649A1 (en) * | 2010-12-16 | 2012-06-20 | Alcatel Lucent | A double-collector uni-travelling-carrier photodiode |
EP2808908B1 (en) | 2013-05-31 | 2023-04-19 | Mellanox Technologies, Ltd. | High-speed photodetector |
US9786855B2 (en) | 2014-12-30 | 2017-10-10 | Indian Institute Of Technology Bombay | Micro electro mechanical system (MEMS) based wide-band polymer photo-detector |
CN105097964B (zh) * | 2015-07-21 | 2017-03-08 | 中国电子科技集团公司第三十八研究所 | 一种有源区高斯掺杂型pπn紫外探测器 |
CN110880521A (zh) * | 2018-09-06 | 2020-03-13 | 夏普株式会社 | 摄像面板及其制造方法 |
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JPH09275224A (ja) * | 1996-04-05 | 1997-10-21 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JPH11512884A (ja) * | 1995-10-05 | 1999-11-02 | イギリス国 | オージェ発生プロセス抑止を使用した半導体ダイオード |
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-
2003
- 2003-02-03 ES ES03708942.2T patent/ES2616248T3/es not_active Expired - Lifetime
- 2003-02-03 US US10/502,109 patent/US7078741B2/en not_active Expired - Lifetime
- 2003-02-03 JP JP2003564910A patent/JP5021888B2/ja not_active Expired - Lifetime
- 2003-02-03 WO PCT/US2003/003181 patent/WO2003065416A2/en active Application Filing
- 2003-02-03 EP EP03708942.2A patent/EP1470574B9/en not_active Expired - Lifetime
- 2003-02-03 CN CNB03803039XA patent/CN100474634C/zh not_active Expired - Lifetime
- 2003-02-03 AU AU2003212899A patent/AU2003212899A1/en not_active Abandoned
- 2003-02-03 KR KR1020047011856A patent/KR100766174B1/ko active IP Right Grant
- 2003-02-03 CA CA2474556A patent/CA2474556C/en not_active Expired - Lifetime
-
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- 2006-05-19 HK HK06105823.6A patent/HK1085841A1/xx not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11512884A (ja) * | 1995-10-05 | 1999-11-02 | イギリス国 | オージェ発生プロセス抑止を使用した半導体ダイオード |
JPH09275224A (ja) * | 1996-04-05 | 1997-10-21 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015520950A (ja) * | 2012-05-17 | 2015-07-23 | ピコメトリクス、エルエルシー | 平面のアバランシェ・フォトダイオード |
Also Published As
Publication number | Publication date |
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US20050056861A1 (en) | 2005-03-17 |
CA2474556A1 (en) | 2003-08-07 |
CN1701445A (zh) | 2005-11-23 |
CA2474556C (en) | 2014-10-07 |
ES2616248T3 (es) | 2017-06-12 |
EP1470574A4 (en) | 2011-02-16 |
EP1470574B9 (en) | 2017-04-12 |
EP1470574B1 (en) | 2016-11-30 |
US7078741B2 (en) | 2006-07-18 |
JP5021888B2 (ja) | 2012-09-12 |
WO2003065416A3 (en) | 2004-03-11 |
AU2003212899A1 (en) | 2003-09-02 |
HK1085841A1 (en) | 2006-09-01 |
CN100474634C (zh) | 2009-04-01 |
KR100766174B1 (ko) | 2007-10-10 |
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KR20040097991A (ko) | 2004-11-18 |
EP1470574A2 (en) | 2004-10-27 |
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