CN110473904A - 垂直GeSe/MoS2 p-n异质结构 - Google Patents
垂直GeSe/MoS2 p-n异质结构 Download PDFInfo
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- 229910005866 GeSe Inorganic materials 0.000 title claims abstract description 45
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 28
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 3
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 24
- 239000002356 single layer Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000609 electron-beam lithography Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims 1
- 230000000295 complement effect Effects 0.000 abstract description 3
- 230000005669 field effect Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000005641 tunneling Effects 0.000 abstract description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910005867 GeSe2 Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 SnS Chemical compound 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 102100021164 Vasodilator-stimulated phosphoprotein Human genes 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005314 correlation function Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005624 perturbation theories Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 108010054220 vasodilator-stimulated phosphoprotein Proteins 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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Abstract
本发明公开了一种垂直GeSe/MoS2p‑n异质结构，由GeSe层、MoS2层、四个金属电极、SiO2/Si衬底组成；所述的MoS2层位于衬底上，GeSe层与MoS2层垂直异质，GeSe层与MoS2层两端分别与金属电极接触；所述的异质结构利用GeSe中的自然p型掺杂和MoS2中的n型掺杂，创建了所述的新GeSe/MoS2pn异质结，GeSe和MoS2之间的II型能带对准以及这两种材料中的互补自然掺杂可以使垂直隧穿场效应管p‑n结突变和缩短屏蔽隧道长度，适用于低功耗应用；在室温下，GeSe/MoS2p‑n异质结的IV曲线类似于典型的p‑n二极管特性，正向偏压(>100nA)的电流呈指数增加，反向偏压(～1nA)的电流小，具有整流特性。
Description
技术领域
本发明涉及半导体异质结构，特别涉及一种垂直GeSe/MoS2 p-n异质结构。
背景技术
分层IV组单卤代化合物是一种新兴的材料平台。与石墨烯，过渡金属二硫化物和黑磷相比，层状单硫化物如SnS，SnSe，GeS和GeSe具有许多独特的电学，热学和光学性质，可用于各种应用，特别的，层状单硫族化合物具有斜方晶系结构并具有异常高的Grüneisen参数，导致超低的热导率和极高的热电品质因数，这使得它们有望用于热电应用。层状IV族单卤化物的带隙在0.5到1.5eV的范围内，与太阳光谱相当，这使得它们对太阳能电池和光电探测器也很有吸引力。此外，一些层状单硫族化合物的有效质量远小于过渡金属二硫化物的有效质量，导致电子应用中更高的载流子迁移率。在层状单卤化物中，GeSe是窄带隙半导体，对于近红外光电探测器和电子隧道器件特别有吸引力。GeSe在体中具有1.08eV的间接带隙，在单层中具有～1.7eV的直接带隙。具有化学计量组成的单晶GeSe在300K时具有95cm2/Vs的空穴迁移率，在112K具有663cm 2/Vs的空穴迁移率。理论上，据预测，单层GeSe的平均空穴迁移率在300K时高达1.1x103cm2/Vs。据报道，GeSe沿垂直于平面方向具有高的光响应性，尽管对单层GeSe晶体进行了大量研究并对单层进行了理论计算，但对GeSe和GeSe异质结构的各向异性电流传输的实验研究仍未实现。
发明内容
发明目的：本发明提供了一种具有各向异性和超陡的亚阈值摆幅的垂直GeSe/MoS2 p-n异质结构。
技术方案：本发明由GeSe层、MoS2层、四个金属电极、衬底组成；所述的MoS2呈位于衬底上，GeSe层与MoS2层垂直异质，GeSe层与MoS2层两端分别与四个金属电极接触。
进一步的，所述的GeSe层为单层，MoS2层为单层。
进一步的，所述的金属电极通过电子束光刻，金属沉积和剥离形成。
进一步的，所述的金属电极由25nm-35nm钛和15nm-25nm金组成。
进一步的，所述的衬底为SiO2/Si。
进一步的，所述的GeSe/MoS2 p-n异质结构能够实现互补金属氧化物半导体电路。
有益效果：与现有技术相比，本发明有以下显著效果：GeSe和MoS2之间的II型能带对准以及这两种材料中的互补自然掺杂可以使垂直隧穿场效应管pn结突变和缩短屏蔽隧道长度，并且这些隧穿场效应管具有超陡的亚阈值摆幅特性，适用于低功耗应用；在室温下，GeSe/MoS2 p-n异质结的IV曲线类似于典型的p-n二极管特性，正向偏压(>100nA)的电流呈指数增加，反向偏压(～1nA)的电流小，具有整流特性。
附图说明
图1为垂直GeSe/MoS2 p-n异质结构俯视图；
图2为GeSe晶体结构图。
具体实施方式
如图1及图2所示，本发明由GeSe层1、MoS2层2、四个金属电极3、衬底4组成；所述的MoS2层位于衬底上4，GeSe层1与MoS2层2垂直异质，GeSe层1与MoS2层2两端分别与金属电极3连接；
本发明利用GeSe中的自然p型掺杂和MoS2中的n型掺杂，创建了所述的新GeSe/MoS2pn异质结，首先剥离多层GeSe薄片并转移到衬底上，多层MoS2薄片从块状晶体上剥离并转移到由载玻片支撑的粘弹性印模上，然后使用机械显微操作台和显微镜定位载玻片以使薄片与GeSe的位置对齐，并通过压制并缓慢释放粘弹性印模来转移MoS2薄片，金属电极由25nm-35nm钛和15nm-25nm金组成，使用电子束光刻，金属沉积和剥离形成。测量有效质量时，采用Perdew-Burke-Eherenzoff交换相关电位。计算时，采用的PAW赝势用VASP代码执行。然后使用具有Perdew-Zunger(PZ)局部密度近似(LDA)交换相关函数的QE代码进行拉曼张量的DFT计算。最后使用QE的密度泛函扰动理论获得每个声子模式的拉曼张量。
Claims (5)
1.一种垂直GeSe/MoS2 p-n异质结构，其特征在于：由GeSe层(1)、MoS2层(2)、四个金属电极(3)、衬底(4)组成；所述的MoS2层(2)位于衬底上(4)，GeSe层(1)与MoS2层(2)垂直异质，GeSe层(1)与MoS2层(2)两端分别与金属电极(3)接触。
2.根据权利要求1所述的垂直GeSe/MoS2 p-n异质结构，其特征在于：所述的异质结构中GeSe层(1)为单层、MoS2层(2)为单层。
3.根据权利要求1所述的垂直GeSe/MoS2 p-n异质结构，其特征在于：所述的金属电极(3)通过电子束光刻，金属沉积和剥离形成。
4.根据权利要求1所述的垂直GeSe/MoS2 p-n异质结构，其特征在于：所述的四个金属电极(3)由25nm-35nm钛和15nm-25nm金组成。
5.根据权利要求1所述的垂直GeSe/MoS2 p-n异质结构，其特征在于：所述的衬底为SiO2/Si。
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| CN201910481813.XA CN110473904A (zh) | 2019-06-04 | 2019-06-04 | 垂直GeSe/MoS2 p-n异质结构 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114759104A (zh) * | 2022-03-29 | 2022-07-15 | 华南师范大学 | 基于ⅱ型范德华异质结近红外偏振光电探测器及其制备方法 |
| CN114975675A (zh) * | 2022-06-30 | 2022-08-30 | 中国科学院半导体研究所 | 光电器件及其制备方法 |
-
2019
- 2019-06-04 CN CN201910481813.XA patent/CN110473904A/zh not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114759104A (zh) * | 2022-03-29 | 2022-07-15 | 华南师范大学 | 基于ⅱ型范德华异质结近红外偏振光电探测器及其制备方法 |
| CN114759104B (zh) * | 2022-03-29 | 2024-01-30 | 华南师范大学 | 基于ⅱ型范德华异质结近红外偏振光电探测器及其制备方法 |
| CN114975675A (zh) * | 2022-06-30 | 2022-08-30 | 中国科学院半导体研究所 | 光电器件及其制备方法 |
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