CN108428764A - 一种GaAs基LFET太赫兹红外光探测器和制备方法 - Google Patents
一种GaAs基LFET太赫兹红外光探测器和制备方法 Download PDFInfo
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种GaAs基LFET太赫兹红外光探测器和制备方法，该探测器包括吸收区、阻挡区、源漏区、介电区和栅区六个部分，制备方法包括五个步骤，即通过光刻、离子注入、等离子体增强化学气相沉积法(PECVD)、热蒸发技术在高阻GaAs基底依次形成吸收区，源漏区(与阻挡区)，介电区，源漏电极，以及栅区。本发明的优点是：栅区电压导致吸收区载流子耗尽有效降低了光生电子‑空穴对的复合速率，提高了内量子效率，从而提高了传统杂质光电导型光子探测器的探测率，并且与当前的半导体工艺技术相兼容。
Description
技术领域
本发明涉及一种基于LFET(类场效应晶体管)和杂质带吸收光电导原理的THz红外探测器和制备方法，特别适合于波长处于40-300微米范围的THz红外光的探测。
背景技术
红外探测技术在气象预报、环境监控、导弹制导、夜视成像等领域有重要的应用需求，这方面以HgCdTe、InGaAs等主流的红外探测器为主，主要响应1-20微米波段。这类器件是基于半导体pn结构光伏效应原理工作，因而，探测器的响应率高并且器件具有较高的工作温度(液氮)，发展迅速。但受材料类型的制约，探测器的响应波长较短。
近年来，随着国家对深空红外探测技术的需求，阻挡杂质带(BIB)探测器日益得到重视，主要的器件类型及响应波段有：硅掺砷(Si:As)覆盖10～25μm，硅掺锑(Si:Sb)覆盖20～40μm，锗掺镓(Ge:Ga)覆盖40～70μm，应变锗掺镓(Ge:Ga)覆盖70～200μm，特别是GaAs掺碲(GaAs:Te)的响应波长范围长达30～300μm，是探测深空冷对象的最优探测器。由于探测波长较长，BIB探测器的工作原理利用杂质光电导效应，不同的是增加一层相同材料类型的高电阻阻挡层，有效降低了器件暗电流。为了提高器件的内量子效率，BIB器件工作时处于外偏压状态，目的是在吸收区形成一段载流子耗尽区，但较窄的耗尽层宽度影响了器件的探测率。
发明内容
本发明的目的是提供一种GaAs基LFET THz红外光探测器，并提供一种实现该结构的制备方法，解决了传统BIB探测器耗尽层较窄导致器件量子效率偏低的技术难题。所述的新型探测器的结构和工作方式不同于传统的FET和BIB探测器，其特征在于：
所述的探测器的吸收区和阻挡区代替了晶体管的沟道；
所述的介质层隔断了源漏电极；
所述的探测器的工作方式在于：源漏区和栅区分别施加固定大小的偏压，被探测光背入射至吸收区，通过监控源漏区之间电流的变化来探测入射光。
所述的GaAs基底是高阻型半导体材料，载流子浓度范围1×1012-8×1012cm-3，使阻挡区载流子浓度基本处于本征值，从而阻挡吸收区杂质带载流子通过。
一种实现该探测器的制备方法，包括如下步骤：
①利用光刻工艺在高阻GaAs基底表面形成掩膜层，接着离子注入吸收杂质形成吸收区；
②利用光刻工艺在GaAs基底表面形成掩膜层，接着离子注入重掺杂杂质形成源漏区和阻挡区；
③采用PECVD工艺在GaAs基底表面蒸镀一层Si3N4介质层；
④利用光刻工艺在介质层表面形成掩膜层，接着热蒸发金属膜形成源漏极欧姆接触；
⑤利用光刻工艺样品在表面再次形成掩膜层，接着热蒸发金属膜制备栅区。
本发明的优点是：
1.探测器结构吸收了FET晶体管和BIB探测器的优点，而弥补了BIB的不足，采用此结构的器件响应波长长，并且具有很高的探测率。
2.本发明结构简单，制备成本低，与当前的半导体工艺相兼容，并且容易推广应用到其它Ge、Si基器件。
附图说明
图1为GaAs基LFET THz红外光探测器结构图。
图2为本发明实施例的器件工艺流程示意图。
具体实施方式
下面结合附图1、2和具体的实施例来详细阐述利用本发明一种GaAs基LFET THz红外光探测器和制备方法制备GaAs:Zn FET THz红外探测器的工艺技术及工作方式：
选择低阻值高纯GaAs基底1，杂质浓度3×1012cm-3，清洗超声后利用掩膜曝光工艺在基底表面覆盖一层光刻胶71，露出吸收区2；
采用离子注入方法注入Zn原子形成吸收区2，杂质浓度和深度分别为3×1016cm-3和200nm；
利用套刻工艺在GaAs基底1表面覆盖露出源漏区3的图形光刻胶72，并利用离子注入Zn原子形成重掺杂的源漏区3和阻挡区11，杂质浓度5×1018cm-3；
采用PECVD工艺在GaAs基底1表面蒸镀一层200nm厚的Si3N4介质层4；
利用光刻工艺在介质层4表面形成掩膜层73，接着热蒸发Ti、Au膜形成源漏极6欧姆接触；
最后，利用光刻工艺样品表面再次形成掩膜层74，接着热蒸发Au膜制备栅区(5)。
工作时，源漏区3和栅极5分别施加约1V和3V电压，当波长约40微米的红外光入射至吸收区，产生的电子-空穴对迅速被分开至源漏区3，导致流过Keithley 2601B电流表的电流值发生变化，即可算出响应率。
Claims (3)
1.一种GaAs基LFET太赫兹红外光探测器，包括GaAs基底(1)、吸收区(2)、阻挡区(11)、源漏区(3)、介电层(4)和栅区(5)，其特征在于：
所述的吸收区(2)和阻挡区(11)代替了晶体管的沟道；
所述的介质层(4)隔断了源漏电极(6)；
所述探测器的源漏区(3)和栅区(5)分别施加固定大小的偏压，被探测光背入射至吸收区，通过监控源漏区(3)之间电流的变化来探测入射光。
2.根据权利要求1所述的一种GaAs基LFET太赫兹红外光探测器，其特征在于，所述的GaAs基底(1)是高阻型半导体材料，载流子浓度范围1×1012-8×1012cm-3。
3.一种制备如权利要求1所述的GaAs基LFET太赫兹红外光探测器的方法，其特征在于包括如下步骤：
①利用光刻工艺在高阻GaAs基底(1)表面形成掩膜层(71)，接着离子注入吸收杂质形成吸收区(2)；
②利用光刻工艺在GaAs基底(1)表面形成掩膜层(72)，接着离子注入重掺杂杂质形成源漏区(3)和阻挡区(11)；
③采用PECVD工艺在GaAs基底(1)表面蒸镀一层Si3N4介质层(4)；
④利用光刻工艺在介质层(4)表面形成掩膜层(73)，接着热蒸发金属膜形成源漏极(6)欧姆接触；
⑤利用光刻工艺在样品表面再次形成掩膜层(74)，接着热蒸发金属膜制备栅区(5)。
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| CN111739972A (zh) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | 一种双面环形Ge基长波红外和太赫兹探测器和制备方法 |
| CN113690338A (zh) * | 2021-08-13 | 2021-11-23 | 中国科学院上海技术物理研究所 | 一种MoS2和GaAs异质结红外探测器及制备方法 |
| CN113725310A (zh) * | 2021-08-13 | 2021-11-30 | 中国科学院上海技术物理研究所 | 一种多结型锗基长波红外探测器及制备方法 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739972A (zh) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | 一种双面环形Ge基长波红外和太赫兹探测器和制备方法 |
| CN111739972B (zh) * | 2020-07-01 | 2023-11-10 | 中国科学院上海技术物理研究所 | 一种双面环形Ge基长波红外和太赫兹探测器和制备方法 |
| CN113690338A (zh) * | 2021-08-13 | 2021-11-23 | 中国科学院上海技术物理研究所 | 一种MoS2和GaAs异质结红外探测器及制备方法 |
| CN113725310A (zh) * | 2021-08-13 | 2021-11-30 | 中国科学院上海技术物理研究所 | 一种多结型锗基长波红外探测器及制备方法 |
| CN113725310B (zh) * | 2021-08-13 | 2024-03-26 | 中国科学院上海技术物理研究所 | 一种多结型锗基长波红外探测器及制备方法 |
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