CN113690338A - 一种MoS2和GaAs异质结红外探测器及制备方法 - Google Patents
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Abstract
本发明公开了一种MoS2和GaAs异质结红外探测器及制备方法，该探测器包含GaAs基底、红外光吸收区、电荷传输层、电荷阻挡区和引线电极，制备方法包括四个步骤，即通过光刻、离子注入、二维材料转移和薄膜淀积等技术在高阻GaAs基底上依次形成红外光吸收区、电荷阻挡区、电荷传输层和引线电极。本发明的优点是：使用不同的材料充当红外光吸收区和电荷传输层，利用MoS2和GaAs之间形成的异质结电场将红外光吸收区内产生的光生载流子(电子或空穴)注入到电荷传输层内，通过电荷传输层电导率的变化来检测红外光信号，减小了红外光吸收区内热激发载流子对器件暗电流的影响，可以提高非本征半导体红外探测器的工作温度，并且相应的器件制备方法简单可行。
Description
技术领域
本发明涉及一种长波红外探测器及其制备方法，该MoS2和GaAs异质结红外探测器特别适用于50～300μm波长范围内的红外探测领域。
背景技术
红外探测是利用红外波段(760nm～1mm)进行目标信息获取的技术，可以探测到其他波段无法获取的信息，在军事、科学、工农业生产和医疗卫生等诸多领域都有着广泛的应用。常见的红外探测器有热探测器、本征半导体红外探测器、非本征半导体红外探测器和量子阱探测器等。非本征半导体红外探测器是利用非本征半导体材料中的杂质原子吸收光子，探测波长由杂质的电离激活能决定。根据常见杂质在硅、锗和砷化镓材料中的电离激活能，可知硅基、锗基和砷化镓基非本征红外探测器的探测波长分别覆盖4～50μm、40～200μm和50～300μm。与其他类型的红外探测器相比，非本征半导体红外探测器具有探测率高、响应速度快和抗辐射性能好等优点，已经成为中、远红外天文探测领域的主流探测器，被广泛应用于各种大型天文探测平台上，如宽视场红外测量探测卫星(WISE)、斯皮策(Spitzer)太空望远镜和詹姆斯·韦伯太空望远镜(JWST)等。
对于常规的非本征半导体红外探测器，为了抑制杂质热激发产生的暗电流，通常需要使探测器工作在液氦温度下。对液氦制冷剂的需求，一方面限制了探测器在外太空探测平台上的有效服役时间，另一方面高额的液氦成本也限制了探测器在普通商用领域的应用。因此，设计新型红外探测器结构，提高探测器的工作温度，具有十分显著的科研和商用价值。
发明内容
本发明的目的是提供一种MoS2和GaAs异质结型非本征半导体红外探测器，并提供一种实现该结构的制备方法，解决了传统非本征半导体红外探测器工作温度低的技术难题。所述的新型探测器的结构和工作方式不同于传统的非本征半导体红外探测器，其特征在于：
所述的长波红外探测器采用平面结构，即引线电极、电荷阻挡区、红外光吸收区和电荷传输层都位于GaAs基底的表面；
所述的电荷传输层位于红外光吸收区的上面，引线电极位于电荷传输层的两端；
所述的GaAs基底是高阻型，杂质浓度范围为1×1012～1×1014cm-3。
所述的红外光吸收区是掺杂GaAs材料，掺杂元素为Mg、S或Te，杂质浓度范围为5×1015～1×1017cm-3。
所述的红外光吸收区和电荷传输层之间形成异质结，在异质结电场的驱使下，红外光吸收区内产生的光生载流子会注入电荷传输层内。
一种实现该探测器的制备方法，包括如下步骤：
①利用紫外光刻工艺在GaAs基底的表面制作红外光吸收区图形；
②利用离子注入工艺对吸收区进行掺杂处理，获得红外光吸收区；
③利用二维材料转移技术将MoS2转移到红外光吸收区的表面，形成电荷传输层；
④利用电子束光刻技术在MoS2两端制作电极区图形，然后蒸镀金属薄膜，形成引线电极。
本发明的优点是：
1.本发明使用体材料作为红外光吸收区，对红外光的吸收效率高；
2.本发明继承了传统非本征半导体红外探测器的优点，可探测波长长，同时又避免了传统非本征半导体红外探测器的缺点，可工作在较高温度下；
3.本发明结构简单，制备成本低，与当前的半导体工艺相兼容，并且容易推广应用到其它材料体系。
附图说明
图1为本发明探测器结构图。
图2为本发明实施例的器件工艺流程示意图。
具体实施方式
下面根据本发明内容和附图说明给出本发明的三个较好的实施例，结合实例进一步说明本发明技术细节、结构特征和功能特点，但这些实例并不限制本发明范围，合乎发明内容和附图说明中描述的实例均应包含在本发明范围内。所述探测器的制备方法具体由以下步骤实现：
实施例1：
选择本征不掺杂的GaAs基底1，掺杂浓度低于1×1013cm-3，借助紫外光刻技术在基底表面制作吸收区图形，使用的光刻胶的厚度约3μm，可以作为后续离子注入过程的掩蔽剂；
通过多次离子注入过程，向红外光吸收区4注入Te杂质，注入深度约0.5μm，掺杂浓度约1×1016cm-3；
通过二维材料转移技术，将MoS2材料转移到红外光吸收区4的表面，形成电荷传输层5；
利用电子束光刻技术在电荷传输层5的两端制作电极区图形；
利用电子束蒸发技术沉积20nm厚的Ni和80nm厚的Au，形成引线电极。
实施例2：
选择本征不掺杂的GaAs基底1，掺杂浓度低于1×1013cm-3，借助紫外光刻技术在基底表面制作吸收区图形，使用的光刻胶6的厚度约3μm，可以作为后续离子注入过程的掩蔽剂；
通过多次离子注入过程，向红外光吸收区4注入Mg杂质，注入深度约0.5μm，掺杂浓度约5×1016cm-3；
通过二维材料转移技术，将MoS2材料转移到红外光吸收区4的表面，形成电荷传输层5；
利用电子束光刻技术在电荷传输层5的两端制作电极区图形；
利用电子束蒸发技术沉积20nm厚的Ti和80nm厚的Au，形成引线电极。
实施例3：
选择本征不掺杂的GaAs基底1，掺杂浓度低于1×1013cm-3，借助紫外光刻技术在基底表面制作吸收区图形，使用的光刻胶6的厚度约3μm，可以作为后续离子注入过程的掩蔽剂；
通过多次离子注入过程，向红外光吸收区4注入S杂质，注入深度约0.5μm，掺杂浓度约3×1016cm-3；
通过二维材料转移技术，将MoS2材料转移到红外光吸收区4的表面，形成电荷传输层5；
利用电子束光刻技术在电荷传输层5的两端制作电极区图形；
利用电子束蒸发技术沉积20nm厚的镍和80nm厚的金，形成引线电极。
Claims (4)
1.一种MoS2和GaAs异质结红外探测器，包括GaAs基底(1)、引线电极(2)、电荷阻挡区(3)、红外光吸收区(4)和电荷传输层(5)，其特征在于：
所述的红外探测器采用平面结构，即引线电极(2)、电荷阻挡区(3)、红外光吸收区(4)和电荷传输层(5)都位于GaAs基底(1)的表面；
所述的电荷传输层(5)位于红外光吸收区(4)的上方，引线电极(2)位于电荷传输层(5)的两端；
所述的红外光吸收区(4)和电荷传输层(5)之间形成异质结，在异质结电场的驱动下，红外光吸收区(4)内产生的光生载流子会注入电荷传输层(5)内。
2.根据权利要求1所述的一种MoS2和GaAs异质结红外探测器，其特征在于：所述的GaAs基底(1)是高阻型，杂质浓度范围为1×1012～1×1014cm-3。
3.根据权利要求1所述的一种MoS2和GaAs异质结红外探测器，其特征在于：所述的红外光吸收区(4)是掺杂GaAs材料，掺杂元素为Mg、S或Te，杂质浓度范围为5×1015～1×1017cm-3。
4.一种制备如权利要求1所述的MoS2和GaAs异质结红外探测器的方法，其特征在于包括如下步骤：
①利用紫外光刻工艺在GaAs基底(1)的表面制作红外光吸收区图形；
②利用离子注入工艺对吸收区进行掺杂处理，获得红外光吸收区(4)；
③利用二维材料转移技术将MoS2转移到红外光吸收区(4)的表面，形成电荷传输层(5)；
④利用电子束光刻技术在MoS2两端制作电极区图形，然后蒸镀金属薄膜，形成引线电极(2)。
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| CN115295676A (zh) * | 2022-08-18 | 2022-11-04 | 之江实验室 | 一种高光响应Te/MoS2异质结光探测器及制备方法 |
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| CN111739972B (zh) * | 2020-07-01 | 2023-11-10 | 中国科学院上海技术物理研究所 | 一种双面环形Ge基长波红外和太赫兹探测器和制备方法 |
| CN115295676A (zh) * | 2022-08-18 | 2022-11-04 | 之江实验室 | 一种高光响应Te/MoS2异质结光探测器及制备方法 |
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