CN113193069B - 一种hBN/BAlN异质结紫外探测器及其制备方法 - Google Patents

一种hBN/BAlN异质结紫外探测器及其制备方法 Download PDF

Info

Publication number
CN113193069B
CN113193069B CN202110354075.XA CN202110354075A CN113193069B CN 113193069 B CN113193069 B CN 113193069B CN 202110354075 A CN202110354075 A CN 202110354075A CN 113193069 B CN113193069 B CN 113193069B
Authority
CN
China
Prior art keywords
baln
hbn
film
layer
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110354075.XA
Other languages
English (en)
Other versions
CN113193069A (zh
Inventor
李强
张浩然
张启凡
白云鹤
云峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Jiaotong University
Original Assignee
Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University filed Critical Xian Jiaotong University
Priority to CN202110354075.XA priority Critical patent/CN113193069B/zh
Publication of CN113193069A publication Critical patent/CN113193069A/zh
Application granted granted Critical
Publication of CN113193069B publication Critical patent/CN113193069B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

本发明属于光电器件及功能薄膜技术领域，公开一种hBN/BAlN异质结紫外探测器及其制备方法；所述hBN/BAlN异质结紫外探测器，包括：BAlN薄膜层，形成于衬底的上表面；hBN薄膜层，形成于所述BAlN薄膜的表面上，且覆盖一半的BAlN薄膜；两个电极，分别形成于BAlN薄膜和hBN薄膜表面上。本发明设计的紫外探测器具有对深紫外光更灵敏的特征，能实现波长250nm以下深紫外光的响应，同时具有良好的热稳定性、化学稳定性以及抗辐射能力，可以在极端恶劣的环境下工作，可兼具自供电和柔性特点，应用场景更广泛。

Description

一种hBN/BAlN异质结紫外探测器及其制备方法
技术领域
本发明属于光电器件及功能薄膜技术领域，具体涉及一种hBN/BAlN异质结紫外探测器及其制备方法。
背景技术
深紫外光电探测器广泛应用于导弹发射探测、枪声预警、紫外火焰探测、污染监测、安全空间通信等军事和民用领域。光电探测器有几种不同的类型，主要包括光电导型和光伏型。光电导型主要靠光电导效应实现光电转换，结构简单，容易制备，但光电响应较慢。光伏型探测器通常具有较小的暗电流、较快的响应速率、较低的电压驱动。越来越多的人开始研究光伏型探测器。
为了得到合适的探测率，探测器一般都需要外接电源，这使得其成本变高、器件更复杂，而且抗辐射能力较差。
发明内容
本发明的目的与提供一种hBN/BAlN异质结紫外探测器及其制备方法，以解决现有探测器需要外部供电、抗辐射能力差等问题，同时能够与二维材料兼容，以期拓展其应用场景。
为达到以上目的，本发明采用如下技术方案：
第一方面，本发明提供一种hBN/BAlN异质结紫外探测器，包括：
BAlN薄膜层；
hBN薄膜层，形成于所述BAlN薄膜的表面上，且覆盖部分BAlN薄膜；
两个电极，分别形成于BAlN薄膜和hBN薄膜表面上。
本发明进一步的改进在于：所述hBN薄膜的厚度为40-100nm。
本发明进一步的改进在于：所述BAlN薄膜的厚度为40-100nm。
本发明进一步的改进在于：所述两个电极为Ni(1nm)/Al(25nm)/Ti(25nm)/Au(25nm)退火形成的合金电极。
本发明进一步的改进在于：所述退火具体为：在400℃氧气中退火3min。
本发明进一步的改进在于：所述两个电极均为直径2mm圆柱形电极。
本发明进一步的改进在于：hBN薄膜层覆盖BAlN薄膜一半的面积。
本发明进一步的改进在于：所述hBN/BAlN异质结紫外探测器还包括柔性衬底；
所述BAlN薄膜层位于所述柔性衬底上。
第二方面，本发明提供一种hBN/BAlN异质结紫外探测器的制备方法，包括以下步骤：
将洁净的生长衬底送入溅射腔室内溅射一层BAlN薄膜；
遮挡部分BAlN薄膜，在未遮挡的BAlN薄膜上溅射一层hBN薄膜层，获得hBN/BAlN双层薄膜；
hBN/BAlN双层薄膜整体剥离，并转移至柔性衬底；
在BAlN薄膜和hBN薄膜表面各蒸镀一个电极。
本发明进一步的改进在于：hBN/BAlN双层薄膜整体剥离，并转移至柔性衬底的步骤具体包括：
将溅射完hBN薄膜层后获得的生长衬底转移至0.5mol/L的KOH溶液中，通过碱性溶液浸泡后，实现BAlN/hBN双层薄膜的整体剥离，再将剥离下的薄膜转移到柔性衬底上，然后烘干，完成hBN/BAlN双层薄膜的整体转移。
相对于现有技术，本发明具有以下有益效果：
第一方面，本发明提供一种hBN/BAlN异质结紫外探测器，hBN/BAlN异质结结区有更高的载流子迁移率，可以获得更快的响应，另外结区有内建电场的存在，即使没有外加电压，光生电子-空穴对在内建电场的作用下漂移，在闭合回路中产生光生电流，达到自供电的效果。
进一步的，hBN薄膜的禁带宽度大于BAlN薄膜的禁带宽度，hBN薄膜在上层可以减少对长波的紫外光吸收，使紫外光更多的到达结区，减少光子损耗。
进一步的，六方氮化硼材料具有超宽的禁带宽度，可以进行波段小于250nm的深紫外光探测，这是现有材料其他体系无法比拟的。且hBN是二维层状结构，与其它材料之间可以通过范德瓦尔斯力结合，理想条件下，无论使用任何衬底，均不存在晶格失配的问题除此之外，hBN具有良好的热稳定性、化学稳定性以及抗辐射能力，可以在极端恶劣的环境下工作。
第二方面，本发明还提供一种hBN/BAlN异质结紫外探测器的制备方法，采用射频磁控溅射法制备hBN薄膜和BAlN薄膜，厚度可控，且两种薄膜属于同一材料体系，晶格失配度很小，容易实现大面积生长。
进一步的，采用碱性溶液浸泡的方式，使两层薄膜整体剥离并不会破坏异质结的完整性，容易实现大面积异质结探测器件的制备。整体剥离的异质结，新衬底可以是刚性衬底、柔性衬底，拓宽了器件的应用范围。
附图说明
构成本发明的一部分的说明书附图用来提供对本发明的进一步理解，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为hBN/BAlN异质结紫外探测器的结构示意图；
图2为hBN/BAlN异质结紫外探测器的制备步骤流程图；
图3为对BAlN薄膜进行部分遮挡示意图；
图4为hBN/BAlN异质结整体转移至衬底后的示意图；
图5为hBN/BAlN异质结紫外探测器I-V响应曲线；
上述附图中，附图标记含义如下：
1-PDMS衬底，2-BAlN薄膜，3-hBN薄膜，4-合金电极，5-生长衬底，6-硅片。
具体实施方式
下面将参考附图并结合实施例来详细说明本发明。需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。
以下详细说明均是示例性的说明，旨在对本发明提供进一步的详细说明。除非另有指明，本发明所采用的所有技术术语与本发明所属领域的一般技术人员的通常理解的含义相同。本发明所使用的术语仅是为了描述具体实施方式，而并非意图限制根据本发明的示例性实施方式。
六方氮化硼(hBN)是超宽禁带半导体材料，可以进行更短波段的深紫外光探测(实现波段≤250nm的响应)，且hBN是二维层状结构，与其它材料之间可以通过范德瓦尔斯力结合，理想条件下，无论使用任何衬底，均不存在晶格失配的问题。hBN还可以实现n型和p型双性掺杂，制备pn结，这是金刚石、ZnO等材料无法比拟的。除此之外，hBN具有良好的热稳定性、化学稳定性以及抗辐射能力，可以在极端恶劣的环境下工作。因此利用hBN来制备紫外探测器具有重要的应用价值。
实施例1
请参阅图1所示，本实施例提供一种hBN/BAlN异质结紫外探测器，包括：
PDMS衬底1，作为光电探测器的转移衬底，实现器件柔性特征；
BAlN薄膜层2，形成于PDMS衬底1的上表面上，用于与hBN薄膜形成异质结，使光生载流子快速分离；
hBN薄膜层3，形成于BAlN薄膜层2的表面上，且只覆盖BAlN薄膜的一半，将禁带宽度较宽的hBN薄膜，位于BAlN薄膜上层可以使更多的光子到达异质结结区；
两个电极4，分别形成于BAlN薄膜和hBN薄膜表面上。
实施例2
请参阅图2所示，基于实施例1的紫外探测器，本发明实施例2还提供上述紫外探测器的制备方法，包括以下步骤：
步骤1：对生长衬底5清洗。将生长衬底5(硅片)在311(硫酸、双氧水和水按照体积比为3：1：1的混合液)溶液加热180℃浸泡15-20min，然后将生长衬底5浸入无水乙醇中超声清洗15min，再使用去离子水冲洗三次后用氮气吹干，去除生长衬底5表面附着的杂质。
步骤2：BAlN薄膜生长。将洁净的生长衬底5送入溅射腔室内加热升温至600℃，升温时间1h，保温时长设置为4h。保温1h后，开始沉积薄膜。氩气和氮气的气体流量比为3：1，高纯六方BN靶材(99.99％)电源功率为200W，Al靶电源功率为150W，溅射压强为0.6Pa，溅射时间3600s，在生长衬底5上形成一层BAlN薄膜2。溅射完成后，样品在真空室中冷却至室温后，取出样品。如图3所示，用一片干净的硅片6将溅射完成的样品中BAlN薄膜2的部分进行遮挡，再将样品放回真空室中。
步骤3：hBN薄膜生长。氩气和氮气的气体流量比为3：1，hBN靶电源功率为200W，溅射压强为0.6Pa，溅射时间4800s。溅射完成后，在未遮挡的BAlN薄膜2上形成一层hBN薄膜层3，待样品冷却至室温，取出样品。
步骤4：hBN/BAlN异质结整体剥离和转移。将样品转移至0.5mol/L的KOH溶液中，通过碱性溶液浸泡12小时后，实现hBN/BAlN双层薄膜的整体剥离，再将剥离下的薄膜转移到PDMS柔性衬底1上，然后烘干，完成薄膜的转移，转移后的示意图如图4所示。
步骤5：制作电极。用电子束蒸镀的方法在hBN薄膜和BAlN薄膜表面依次蒸镀直径均为2mm的Ni(1nm)/Al(25nm)/Ti(25nm)/Au(25nm)，然后在400℃氧气中退火3min，形成合金电极4。
对上述实施案例中的器件进行I-V测试，如图5所示，无论在黑暗条件还是紫外光照射条件下，都表现出整流特性；可以看到，在零偏压情况下，紫外光照射下的零偏电流比黑暗条件下大，此现象证明了该紫外探测器自供电的特性。
最后应当说明的是：以上实施例仅用以说明本发明的技术方案而非对其限制，尽管参照上述实施例对本发明进行了详细的说明，所属领域的普通技术人员应当理解：依然可以对本发明的具体实施方式进行修改或者等同替换，而未脱离本发明精神和范围的任何修改或者等同替换，其均应涵盖在本发明的权利要求保护范围之内。

Claims (8)

1.一种hBN/BAlN异质结紫外探测器，其特征在于，包括：
BAlN薄膜层；
hBN薄膜层，形成于所述BAlN薄膜的表面上，且覆盖部分BAlN薄膜；
两个电极，分别形成于BAlN薄膜和hBN薄膜表面上；
所述hBN/BAlN异质结紫外探测器具有自供电的特性；
所述hBN薄膜和BAlN薄膜的厚度均为40-100nm。
2.根据权利要求1所述的hBN/BAlN异质结紫外探测器，其特征在于，所述两个电极为Ni/Al/Ti/Au退火形成的合金电极；其中，Ni层厚度为1nm，Al层厚度为25nm，Ti层厚度为25nm，Au层厚度为25nm。
3.根据权利要求2所述的hBN/BAlN异质结紫外探测器，其特征在于，所述退火具体为：在400℃氧气中退火3min。
4.根据权利要求1所述的hBN/BAlN异质结紫外探测器，其特征在于，所述两个电极均为直径2 mm圆柱形电极。
5.根据权利要求1所述的hBN/BAlN异质结紫外探测器，其特征在于，hBN薄膜层覆盖BAlN薄膜一半的面积。
6.根据权利要求1所述的hBN/BAlN异质结紫外探测器，其特征在于，所述hBN/BAlN异质结紫外探测器还包括柔性衬底；
所述BAlN薄膜层位于所述柔性衬底上。
7.权利要求1至6中任一项所述的一种hBN/BAlN异质结紫外探测器的制备方法，其特征在于，包括以下步骤：
将洁净的生长衬底送入溅射腔室内溅射一层BAlN薄膜；
遮挡部分BAlN薄膜，在未遮挡的BAlN薄膜上溅射一层hBN薄膜层，获得hBN/BAlN双层薄膜；
hBN/BAlN双层薄膜整体剥离，并转移至柔性衬底；
在BAlN薄膜和hBN薄膜表面各蒸镀一个电极。
8.根据权利要求7所述一种hBN/BAlN异质结紫外探测器的制备方法，其特征在于，hBN/BAlN双层薄膜整体剥离，并转移至柔性衬底的步骤具体包括：
将溅射完hBN薄膜层后获得的生长衬底转移至0.5mol/L的KOH溶液中，通过碱性溶液浸泡后，实现BAlN/hBN双层薄膜的整体剥离，再将剥离下的薄膜转移到柔性衬底上，然后烘干，完成hBN/BAlN双层薄膜的整体转移。
CN202110354075.XA 2021-03-31 2021-03-31 一种hBN/BAlN异质结紫外探测器及其制备方法 Active CN113193069B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110354075.XA CN113193069B (zh) 2021-03-31 2021-03-31 一种hBN/BAlN异质结紫外探测器及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110354075.XA CN113193069B (zh) 2021-03-31 2021-03-31 一种hBN/BAlN异质结紫外探测器及其制备方法

Publications (2)

Publication Number Publication Date
CN113193069A CN113193069A (zh) 2021-07-30
CN113193069B true CN113193069B (zh) 2023-03-31

Family

ID=76974494

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110354075.XA Active CN113193069B (zh) 2021-03-31 2021-03-31 一种hBN/BAlN异质结紫外探测器及其制备方法

Country Status (1)

Country Link
CN (1) CN113193069B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114639752A (zh) * 2022-03-09 2022-06-17 西安交通大学 一种紫外探测器-紫外led集成器件及制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9804563D0 (sv) * 1998-12-28 1998-12-28 Asea Brown Boveri A switch
WO2012113685A2 (en) * 2011-02-22 2012-08-30 Dsm Ip Assets B.V. Uv-led-light source
US20130292685A1 (en) * 2012-05-05 2013-11-07 Texas Tech University System Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
CN106129797A (zh) * 2016-08-09 2016-11-16 广东工业大学 基于ws2/石墨烯异质结的超短脉冲光纤激光器
CN109494154B (zh) * 2018-11-14 2020-04-03 中国工程物理研究院电子工程研究所 提高氮化镓基电子器件可靠性的方法及氮化镓基电子器件
CN110221369B (zh) * 2019-06-26 2020-10-27 西安交通大学 一种基于BN(Al)薄膜的布拉格反射镜及制备方法
CN111106202B (zh) * 2020-01-13 2021-04-20 吉林大学 一种基于氮化镁薄膜的光电探测器件及其制备方法
CN111155065B (zh) * 2020-01-19 2021-02-02 西安交通大学 一种六方氮化硼薄膜的制备剥离及转移方法
CN112563353B (zh) * 2020-12-29 2023-01-03 中国科学院长春光学精密机械与物理研究所 一种异质结紫外探测器及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
二维六方氮化硼薄膜的制备及光电特性研究;丁馨等;《苏州科技大学学报（自然科学版）》;20200331;第37卷(第1期);全文 *

Also Published As

Publication number Publication date
CN113193069A (zh) 2021-07-30

Similar Documents

Publication Publication Date Title
CN107369763B (zh) 基于Ga2O3/钙钛矿异质结的光电探测器及其制备方法
CN109461790B (zh) 氧化镓/石墨烯异质结零功耗光电探测器及其制造方法
Yamada et al. Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction
Reddy et al. Characterisation of CdO thin films deposited by activated reactive evaporation
Li et al. Flexible ultraviolet photodetector based ZnO film sputtered on paper
Periasamy et al. Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors
Liu et al. Comparison of β-Ga2O3 thin films grown on r-plane and c-plane sapphire substrates
CN114220920A (zh) 一种量子点红外探测器及其制备方法
CN108346712B (zh) 一种硅掺杂氮化硼/石墨烯的pn结型紫外探测器制备方法
Hsueh et al. Crystalline-Si photovoltaic devices with ZnO nanowires
CN113193069B (zh) 一种hBN/BAlN异质结紫外探测器及其制备方法
CN109411562A (zh) 二硒化铂薄膜/n-型锗异质结近红外光探测器及其制备方法
Guo et al. Unveiling interface interaction assisted broadband photoresponse of epitaxial 2D Bi 2 O 2 Se on perovskite oxides
CN110993707B (zh) 基于氧化镓多层堆叠结构的pin二极管及其制备方法
CN109524491B (zh) 具有ZnTe过渡层的GaN-CdZnTe复合结构组件、应用及其制备方法
CN112054074A (zh) 光电探测器阵列及其制备方法、光电探测器及其制备方法
Hwang et al. High performance NiO/Ag/NiO transparent conducting electrodes for p-Si/n-ZnO heterojunction photodiodes
CN113437165B (zh) 一种光电探测器及其制备方法
CN110350043B (zh) 一种自组装结晶/非晶氧化镓相结光电探测器及其制造方法
Zheng et al. Boosting the performance of deep-ultraviolet photodetector arrays based on phase-transformed heteroepitaxial β-Ga2O3 films for solar-blind imaging
Liu Fabrication and photovoltaic effect of ZnO/silicon nanopillars heterojunction solar cell
CN114038926A (zh) 一种高增益平面型雪崩单光子探测器及其制备方法
CN113113499A (zh) 一种pn结型氧化镓基自供电紫外探测器及其制备方法
CN113838943A (zh) 一种基于各向异性二维材料的偏振光探测器及其制备方法
CN106409964B (zh) 一种石墨烯基碲镉汞材料及其制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant